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IPU80R750P7AKMA1 IPU80R750P7AKMA1 INFINEON TECHNOLOGIES IPU80R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: tube
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
товару немає в наявності
IPA95R750P7XKSA1 IPA95R750P7XKSA1 INFINEON TECHNOLOGIES IPA95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
товару немає в наявності
IPD80R750P7ATMA1 IPD80R750P7ATMA1 INFINEON TECHNOLOGIES IPD80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
товару немає в наявності
IPD95R750P7ATMA1 IPD95R750P7ATMA1 INFINEON TECHNOLOGIES IPD95R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
товару немає в наявності
IPP80R750P7XKSA1 IPP80R750P7XKSA1 INFINEON TECHNOLOGIES IPP80R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: tube
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
товару немає в наявності
IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
товару немає в наявності
SMBD914E6327HTSA1 SMBD914E6327HTSA1 INFINEON TECHNOLOGIES SMBD914E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Power dissipation: 0.37W
Kind of package: reel; tape
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+199.04 грн
Мінімальне замовлення: 2
IRLHM630TRPBF IRLHM630TRPBF INFINEON TECHNOLOGIES irlhm630pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.7W
Polarisation: unipolar
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: HEXFET®
Kind of channel: enhanced
Drain current: 21A
товару немає в наявності
BCR430UXTSA2 INFINEON TECHNOLOGIES Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: PG-SOT23-6
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Output current: 20...100mA
Operating voltage: 6...42V DC
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Topology: single transistor
товару немає в наявності
TT210N12KOF  TT210N12KOF  INFINEON TECHNOLOGIES TT210N12KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+9357.99 грн
IPP076N15N5AKSA1 IPP076N15N5AKSA1 INFINEON TECHNOLOGIES IPP076N15N5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
2+289.8 грн
5+ 182.6 грн
13+ 172.99 грн
Мінімальне замовлення: 2
TT160N16SOFHPSA1 INFINEON TECHNOLOGIES TT160N16SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
CY7C1470BV25-167BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 167MHz
товару немає в наявності
CY7C1470BV25-200BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470V25-200BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470V25-200BZXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470BV25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470BV25-250AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 250MHz
товару немає в наявності
CY7C1470BV25-250AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 250MHz
товару немає в наявності
FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES FP15R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Collector current: 15A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Pulsed collector current: 30A
товару немає в наявності
IRL3713PBF IRL3713PBF INFINEON TECHNOLOGIES irl3713.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 INFINEON TECHNOLOGIES IPA80R1K0CE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
3+153.66 грн
10+ 97.59 грн
13+ 70.97 грн
Мінімальне замовлення: 3
IPA80R1K4P7XKSA1 IPA80R1K4P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
товару немає в наявності
IRF6218STRLPBF IRF6218STRLPBF INFINEON TECHNOLOGIES irf6218spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES irfp4332pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Power dissipation: 360W
Polarisation: unipolar
Gate charge: 99nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 250V
Drain current: 57A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
2+317.67 грн
6+ 167.08 грн
15+ 158.21 грн
Мінімальне замовлення: 2
TLE92108231QXXUMA1 INFINEON TECHNOLOGIES Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V DC
товару немає в наявності
TLE92108232QXXUMA1 INFINEON TECHNOLOGIES Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V DC
товару немає в наявності
IRLP3034PBF IRLP3034PBF INFINEON TECHNOLOGIES irlp3034pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+230.09 грн
6+ 155.99 грн
16+ 147.86 грн
Мінімальне замовлення: 2
IRFP7430PBF IRFP7430PBF INFINEON TECHNOLOGIES IRFP7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Mounting: THT
Drain-source voltage: 40V
Drain current: 404A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 366W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Gate-source voltage: ±20V
Trade name: StrongIRFET
Kind of channel: enhanced
Case: TO247AC
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
3+170.38 грн
8+ 111.63 грн
22+ 104.98 грн
Мінімальне замовлення: 3
BSL802SNH6327XTSA1 BSL802SNH6327XTSA1 INFINEON TECHNOLOGIES BSL802SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 7.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
товару немає в наявності
FF300R17ME4BOSA1 INFINEON TECHNOLOGIES FF300R17ME4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-ECONOD-3
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
товару немає в наявності
IRF7470TRPBF IRF7470TRPBF INFINEON TECHNOLOGIES irf7470pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IPL60R065P7AUMA1 IPL60R065P7AUMA1 INFINEON TECHNOLOGIES IPL60R065P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 201W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 201W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
BC847PNH6433XTMA1 BC847PNH6433XTMA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: complementary pair
Mounting: SMD
Case: SOT363
товару немає в наявності
CY7C1011DV33-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
товару немає в наявності
CY7C1020DV33-10ZSXIT INFINEON TECHNOLOGIES CYPRS10439-1.pdf?t.download=true&u=5oefqw Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
товару немає в наявності
FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES FP10R12W1T7B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Type of module: IGBT
Mechanical mounting: screw
Case: AG-EASY1B-2
Technology: EasyPIM™ 1B
Collector current: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
товару немає в наявності
IPD80P03P4L07ATMA1 INFINEON TECHNOLOGIES Infineon-IPD80P03P4L_07-DS-v01_00-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ed1d7b2011f366dae693f24&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -65A
Pulsed drain current: -320A
Power dissipation: 88W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3GATMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES BSZ180P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES IPD082N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Case: PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 8.2mΩ
Drain current: 80A
Drain-source voltage: 100V
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
товару немає в наявності
XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Kit contents: development board with XMCmicrocontroller; extension board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
товару немає в наявності
XMC4400F100F256ABXQSA1 XMC4400F100F256ABXQSA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Supply voltage: 3.3V DC
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Case: PG-LQFP-100
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
товару немає в наявності
XMC4500F100F1024ACXQMA1 XMC4500F100F1024ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 1MB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
товару немає в наявності
XMC4504F100F512ACXQMA1 XMC4504F100F512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 512kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
товару немає в наявності
IR2118PBF IR2118PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
товару немає в наявності
CY7C4122KV13-106FCXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.3V DC
Frequency: 1066MHz
товару немає в наявності
IR2175STRPBF INFINEON TECHNOLOGIES IRSDS17958-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Mounting: SMD
Supply voltage: 9.5...20V DC
Operating temperature: -40...125°C
Power: 625mW
Output current: 20mA
Type of integrated circuit: driver
Kind of package: reel; tape
Kind of integrated circuit: current sensor
Voltage class: 600V
Case: SO8
товару немає в наявності
S29AL008J55BFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J55BFIR22 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J70BAN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J70BFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J70BFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
IPU80R750P7AKMA1 IPU80R750P7.pdf
IPU80R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: tube
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
товару немає в наявності
IPA95R750P7XKSA1 IPA95R750P7.pdf
IPA95R750P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
товару немає в наявності
IPD80R750P7ATMA1 IPD80R750P7.pdf
IPD80R750P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
товару немає в наявності
IPD95R750P7ATMA1 IPD95R750P7.pdf
IPD95R750P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
товару немає в наявності
IPP80R750P7XKSA1 IPP80R750P7.pdf
IPP80R750P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: tube
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
товару немає в наявності
IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
товару немає в наявності
SMBD914E6327HTSA1 SMBD914E6327HTSA1.pdf
SMBD914E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Power dissipation: 0.37W
Kind of package: reel; tape
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+199.04 грн
Мінімальне замовлення: 2
IRLHM630TRPBF irlhm630pbf.pdf
IRLHM630TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.7W
Polarisation: unipolar
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: HEXFET®
Kind of channel: enhanced
Drain current: 21A
товару немає в наявності
BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: PG-SOT23-6
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Output current: 20...100mA
Operating voltage: 6...42V DC
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Topology: single transistor
товару немає в наявності
TT210N12KOF  TT210N12KOF.pdf
TT210N12KOF 
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+9357.99 грн
IPP076N15N5AKSA1 IPP076N15N5.pdf
IPP076N15N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+289.8 грн
5+ 182.6 грн
13+ 172.99 грн
Мінімальне замовлення: 2
TT160N16SOFHPSA1 TT160N16SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
CY7C1470BV25-167BZXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 167MHz
товару немає в наявності
CY7C1470BV25-200BZXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470V25-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470V25-200BZI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470V25-200BZXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470BV25-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
CY7C1470BV25-250AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Frequency: 250MHz
товару немає в наявності
CY7C1470BV25-250AXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.5V DC
Frequency: 250MHz
товару немає в наявності
FP15R12W1T4_B3 FP15R12W1T4B3.pdf
FP15R12W1T4_B3
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Collector current: 15A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Pulsed collector current: 30A
товару немає в наявності
IRL3713PBF description irl3713.pdf
IRL3713PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
IPA80R1K0CEXKSA2 IPA80R1K0CE.pdf
IPA80R1K0CEXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+153.66 грн
10+ 97.59 грн
13+ 70.97 грн
Мінімальне замовлення: 3
IPA80R1K4P7XKSA1 Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c
IPA80R1K4P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
товару немає в наявності
IRF6218STRLPBF irf6218spbf.pdf
IRF6218STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IRFP4332PBF description irfp4332pbf.pdf
IRFP4332PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Power dissipation: 360W
Polarisation: unipolar
Gate charge: 99nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 250V
Drain current: 57A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+317.67 грн
6+ 167.08 грн
15+ 158.21 грн
Мінімальне замовлення: 2
TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V DC
товару немає в наявності
TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Operating voltage: 6...28V DC
товару немає в наявності
IRLP3034PBF irlp3034pbf.pdf
IRLP3034PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+230.09 грн
6+ 155.99 грн
16+ 147.86 грн
Мінімальне замовлення: 2
IRFP7430PBF IRFP7430PBF.pdf
IRFP7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Mounting: THT
Drain-source voltage: 40V
Drain current: 404A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 366W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Gate-source voltage: ±20V
Trade name: StrongIRFET
Kind of channel: enhanced
Case: TO247AC
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+170.38 грн
8+ 111.63 грн
22+ 104.98 грн
Мінімальне замовлення: 3
BSL802SNH6327XTSA1 BSL802SNH6327XTSA1.pdf
BSL802SNH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 7.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
товару немає в наявності
FF300R17ME4BOSA1 FF300R17ME4.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-ECONOD-3
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
товару немає в наявності
IRF7470TRPBF description irf7470pbf.pdf
IRF7470TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
IPL60R065P7AUMA1 IPL60R065P7.pdf
IPL60R065P7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 201W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 201W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
BC847PNH6433XTMA1 BC846PNH6327.pdf
BC847PNH6433XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: complementary pair
Mounting: SMD
Case: SOT363
товару немає в наявності
CY7C1011DV33-10ZSXIT Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
товару немає в наявності
CY7C1020DV33-10ZSXIT CYPRS10439-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
товару немає в наявності
FP10R12W1T7B11BOMA1 FP10R12W1T7B11.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Type of module: IGBT
Mechanical mounting: screw
Case: AG-EASY1B-2
Technology: EasyPIM™ 1B
Collector current: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
товару немає в наявності
IPD80P03P4L07ATMA1 Infineon-IPD80P03P4L_07-DS-v01_00-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ed1d7b2011f366dae693f24&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -65A
Pulsed drain current: -320A
Power dissipation: 88W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1-DTE.pdf
BSZ180P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA-DTE.pdf
BSZ180P03NS3EGATMA
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
IPD082N10N3GATMA1 IPD082N10N3G-DTE.pdf
IPD082N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Case: PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 8.2mΩ
Drain current: 80A
Drain-source voltage: 100V
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
товару немає в наявності
XMC4800 RELAX ETHERCAT KIT xmc4700_4800.pdf
XMC4800 RELAX ETHERCAT KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Kit contents: development board with XMCmicrocontroller; extension board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
товару немає в наявності
XMC4400F100F256ABXQSA1 XMC4400-DTE.pdf
XMC4400F100F256ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Supply voltage: 3.3V DC
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Case: PG-LQFP-100
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
товару немає в наявності
XMC4500F100F1024ACXQMA1 XMC4500-DTE.pdf
XMC4500F100F1024ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 1MB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
товару немає в наявності
XMC4504F100F512ACXQMA1 XMC4500-DTE.pdf
XMC4504F100F512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 512kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
товару немає в наявності
IR2118PBF ir2117.pdf
IR2118PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
товару немає в наявності
CY7C4122KV13-106FCXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.3V DC
Frequency: 1066MHz
товару немає в наявності
IR2175STRPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Mounting: SMD
Supply voltage: 9.5...20V DC
Operating temperature: -40...125°C
Power: 625mW
Output current: 20mA
Type of integrated circuit: driver
Kind of package: reel; tape
Kind of integrated circuit: current sensor
Voltage class: 600V
Case: SO8
товару немає в наявності
S29AL008J55BFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J55BFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J55BFIR22 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J55TFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J55TFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J55TFNR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J55TFNR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
товару немає в наявності
S29AL008J70BAN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J70BFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J70BFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
S29AL008J70BFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: VFBGA48
товару немає в наявності
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