Продукція > GOFORD SEMICONDUCTOR > Всі товари виробника GOFORD SEMICONDUCTOR (905) > Сторінка 7 з 16
Фото | Назва | Виробник | Інформація |
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G20N06D52 | GOFORD Semiconductor | Dual N-Channel Enhancement Mode Power MOSFET |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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G20N06D52 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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G20P06K | Goford Semiconductor |
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~- Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V FET Feature: Standard |
товар відсутній |
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G20P06K | Goford Semiconductor |
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~- Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V FET Feature: Standard |
на замовлення 1180 шт: термін постачання 21-31 дні (днів) |
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G20P06K | GOFORD Semiconductor | P-CH,-60V,-20A,RD(max) Less Than 45mOhm at -10V,VTH -2.0V to -3.5V, TO-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G20P08K | Goford Semiconductor |
Description: P-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
товар відсутній |
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G20P08K | Goford Semiconductor |
Description: P-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
на замовлення 461 шт: термін постачання 21-31 дні (днів) |
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G20P10KE | Goford Semiconductor |
Description: P-CH, -100V, 20A, RD(MAX)<116M@- Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V |
товар відсутній |
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G20P10KE | Goford Semiconductor |
Description: P-CH, -100V, 20A, RD(MAX)<116M@- Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V |
на замовлення 2468 шт: термін постачання 21-31 дні (днів) |
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G20P10KE | GOFORD Semiconductor | P-CH,-100V,-20A,RD(max) Less Than 116mOhm at -10V, VTH-1.0V to -3.0V, TO-252 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G220P02D2 | Goford Semiconductor |
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G220P02D2 | Goford Semiconductor |
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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G220P02D2 | Goford Semiconductor |
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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G220P03D32 | Goford Semiconductor |
Description: MOSFET P+P-CH 30V12A 30W DFN3*3- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Dual |
товар відсутній |
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G220P03D32 | Goford Semiconductor |
Description: MOSFET P+P-CH 30V12A 30W DFN3*3- Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Dual |
на замовлення 4930 шт: термін постачання 21-31 дні (днів) |
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G220P03S2 | Goford Semiconductor |
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP |
товар відсутній |
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G220P03S2 | Goford Semiconductor |
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3935 шт: термін постачання 21-31 дні (днів) |
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G2304 | Goford Semiconductor |
Description: MOSFET N-CH 30V 3.6A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V FET Feature: Standard Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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G2304 | Goford Semiconductor |
Description: MOSFET N-CH 30V 3.6A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V FET Feature: Standard Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V |
на замовлення 8870 шт: термін постачання 21-31 дні (днів) |
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G2305 | GOFORD Semiconductor | P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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G2305 | Goford Semiconductor |
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V |
на замовлення 8940 шт: термін постачання 21-31 дні (днів) |
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G2305 | Goford Semiconductor |
Description: MOSFET P-CH 20V 4.8A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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G2305 | Goford Semiconductor |
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G230P06D5 | Goford Semiconductor |
Description: MOSFET P-CH 60V 48A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V |
товар відсутній |
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G230P06D5 | Goford Semiconductor |
Description: MOSFET P-CH 60V 48A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ -30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G230P06D5 | Goford Semiconductor |
Description: MOSFET P-CH 60V 48A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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G230P06F | Goford Semiconductor |
Description: MOSFET P-CH 60V 42A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 67.57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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G230P06F | Goford Semiconductor |
Description: MOSFET P-CH 60V 42A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V Power Dissipation (Max): 67.57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ -30 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G230P06K | Goford Semiconductor |
Description: MOSFET P-CH 60V 60A TO-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ -30 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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G230P06K | Goford Semiconductor |
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V, Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V |
товар відсутній |
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G230P06K | Goford Semiconductor |
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V, Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V |
на замовлення 1760 шт: термін постачання 21-31 дні (днів) |
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G230P06S | Goford Semiconductor |
Description: MOSFET P-CH 60V 9A SOP-8L Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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G230P06T | Goford Semiconductor |
Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH- Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V FET Feature: Standard Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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G2312 | Goford Semiconductor |
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V |
товар відсутній |
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G2312 | Goford Semiconductor |
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V |
на замовлення 1070 шт: термін постачання 21-31 дні (днів) |
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G23N06K | Goford Semiconductor |
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G23N06K | Goford Semiconductor |
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
на замовлення 3495 шт: термін постачання 21-31 дні (днів) |
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G250N03IE | GOFORD Semiconductor | N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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G250N03IE | Goford Semiconductor |
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V |
товар відсутній |
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G250N03IE | Goford Semiconductor |
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V |
на замовлення 2576 шт: термін постачання 21-31 дні (днів) |
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G25N06K | GOFORD Semiconductor | NChannel Enhancement Mode Power MOSFET |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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G25N06K | Goford Semiconductor |
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G25N06K | Goford Semiconductor |
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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G26P04D5 | Goford Semiconductor |
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G26P04D5 | Goford Semiconductor |
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V |
на замовлення 62723 шт: термін постачання 21-31 дні (днів) |
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G26P04D5 | Goford Semiconductor |
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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G26P04K | Goford Semiconductor |
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G26P04K | Goford Semiconductor |
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
на замовлення 5279 шт: термін постачання 21-31 дні (днів) |
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G28N02T | Goford Semiconductor |
Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~ Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
товар відсутній |
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G28N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V Power Dissipation (Max): 20.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G28N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V Power Dissipation (Max): 20.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G28N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V Power Dissipation (Max): 20.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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G29 | Goford Semiconductor |
Description: MOSFET P-CH 15V 4.1A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.05W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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G29 | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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G29 | Goford Semiconductor |
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.05W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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G29 | Goford Semiconductor |
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.05W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V |
на замовлення 12764 шт: термін постачання 21-31 дні (днів) |
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G2K2P10D3E | Goford Semiconductor |
Description: MOSFET P-CH ESD 100V 10A DFN3*3- Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V |
на замовлення 4870 шт: термін постачання 21-31 дні (днів) |
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G2K2P10D3E | Goford Semiconductor |
Description: MOSFET P-CH ESD 100V 10A DFN3*3- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V |
товар відсутній |
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G2K2P10S2E | Goford Semiconductor |
Description: MOSFET 2P-CH 100V 3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товар відсутній |
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G2K2P10S2E | Goford Semiconductor |
Description: MOSFET 2P-CH 100V 3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3763 шт: термін постачання 21-31 дні (днів) |
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G20N06D52 |
Виробник: GOFORD Semiconductor
Dual N-Channel Enhancement Mode Power MOSFET
Dual N-Channel Enhancement Mode Power MOSFET
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 16.8 грн |
15000+ | 15.48 грн |
G20N06D52 |
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Description: MOSFET 2N-CH 60V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 14.43 грн |
15000+ | 12.81 грн |
G20P06K |
Виробник: Goford Semiconductor
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V
FET Feature: Standard
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V
FET Feature: Standard
товар відсутній
G20P06K |
Виробник: Goford Semiconductor
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V
FET Feature: Standard
Description: P-60V, -20A,RD<45M@-10V,VTH-2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V
FET Feature: Standard
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 48.59 грн |
10+ | 40.76 грн |
100+ | 28.21 грн |
500+ | 22.13 грн |
1000+ | 18.83 грн |
G20P06K |
Виробник: GOFORD Semiconductor
P-CH,-60V,-20A,RD(max) Less Than 45mOhm at -10V,VTH -2.0V to -3.5V, TO-252
P-CH,-60V,-20A,RD(max) Less Than 45mOhm at -10V,VTH -2.0V to -3.5V, TO-252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 14.91 грн |
G20P08K |
Виробник: Goford Semiconductor
Description: P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
товар відсутній
G20P08K |
Виробник: Goford Semiconductor
Description: P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
на замовлення 461 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.48 грн |
10+ | 54.64 грн |
100+ | 42.63 грн |
G20P10KE |
Виробник: Goford Semiconductor
Description: P-CH, -100V, 20A, RD(MAX)<116M@-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V
Description: P-CH, -100V, 20A, RD(MAX)<116M@-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V
товар відсутній
G20P10KE |
Виробник: Goford Semiconductor
Description: P-CH, -100V, 20A, RD(MAX)<116M@-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V
Description: P-CH, -100V, 20A, RD(MAX)<116M@-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V
на замовлення 2468 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 102.67 грн |
10+ | 62.26 грн |
100+ | 41.35 грн |
500+ | 30.35 грн |
1000+ | 27.62 грн |
G20P10KE |
Виробник: GOFORD Semiconductor
P-CH,-100V,-20A,RD(max) Less Than 116mOhm at -10V, VTH-1.0V to -3.0V, TO-252
P-CH,-100V,-20A,RD(max) Less Than 116mOhm at -10V, VTH-1.0V to -3.0V, TO-252
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 21.47 грн |
G220P02D2 |
Виробник: Goford Semiconductor
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.15 грн |
G220P02D2 |
Виробник: Goford Semiconductor
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29 грн |
14+ | 22.57 грн |
100+ | 15.36 грн |
500+ | 10.81 грн |
1000+ | 8.11 грн |
G220P02D2 |
Виробник: Goford Semiconductor
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.58 грн |
G220P03D32 |
Виробник: Goford Semiconductor
Description: MOSFET P+P-CH 30V12A 30W DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
Description: MOSFET P+P-CH 30V12A 30W DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
товар відсутній
G220P03D32 |
Виробник: Goford Semiconductor
Description: MOSFET P+P-CH 30V12A 30W DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
Description: MOSFET P+P-CH 30V12A 30W DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.32 грн |
10+ | 35.17 грн |
100+ | 24.43 грн |
500+ | 17.9 грн |
1000+ | 14.55 грн |
2000+ | 13.01 грн |
G220P03S2 |
Виробник: Goford Semiconductor
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
товар відсутній
G220P03S2 |
Виробник: Goford Semiconductor
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 44.67 грн |
10+ | 36.75 грн |
100+ | 25.52 грн |
500+ | 18.7 грн |
1000+ | 15.2 грн |
2000+ | 13.59 грн |
G2304 |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.67 грн |
6000+ | 5.22 грн |
G2304 |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V
на замовлення 8870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.35 грн |
15+ | 21.28 грн |
100+ | 10.72 грн |
500+ | 8.21 грн |
1000+ | 6.09 грн |
G2305 |
Виробник: GOFORD Semiconductor
P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23
P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4055+ | 3.03 грн |
15000+ | 2.79 грн |
30000+ | 2.54 грн |
G2305 |
Виробник: Goford Semiconductor
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
на замовлення 8940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 30.57 грн |
15+ | 20.98 грн |
100+ | 10.6 грн |
500+ | 8.11 грн |
1000+ | 6.02 грн |
G2305 |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 20V 4.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Description: MOSFET P-CH 20V 4.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.65 грн |
15000+ | 2.35 грн |
30000+ | 2.14 грн |
G2305 |
Виробник: Goford Semiconductor
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.6 грн |
G230P06D5 |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
товар відсутній
G230P06D5 |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ -30 V
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ -30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 19.43 грн |
G230P06D5 |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 58 грн |
10+ | 48.76 грн |
100+ | 33.74 грн |
500+ | 26.45 грн |
1000+ | 22.51 грн |
2000+ | 20.05 грн |
G230P06F |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 42A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 67.57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V
Description: MOSFET P-CH 60V 42A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 67.57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.54 грн |
10+ | 55.4 грн |
G230P06F |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 42A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V
Power Dissipation (Max): 67.57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ -30 V
Description: MOSFET P-CH 60V 42A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V
Power Dissipation (Max): 67.57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ -30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 26.6 грн |
G230P06K |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 60A TO-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ -30 V
Description: MOSFET P-CH 60V 60A TO-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ -30 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.95 грн |
15000+ | 21.27 грн |
30000+ | 19.12 грн |
G230P06K |
Виробник: Goford Semiconductor
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
товар відсутній
G230P06K |
Виробник: Goford Semiconductor
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
на замовлення 1760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 61.13 грн |
10+ | 51.02 грн |
100+ | 35.3 грн |
500+ | 27.68 грн |
1000+ | 23.56 грн |
G230P06S |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 9A SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V
Description: MOSFET P-CH 60V 9A SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 18.75 грн |
G230P06T |
Виробник: Goford Semiconductor
Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
FET Feature: Standard
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V
Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
FET Feature: Standard
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.97 грн |
50+ | 53.18 грн |
G2312 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
товар відсутній
G2312 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.35 грн |
15+ | 21.51 грн |
100+ | 10.85 грн |
500+ | 8.31 грн |
1000+ | 6.16 грн |
G23N06K |
Виробник: Goford Semiconductor
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 14.94 грн |
G23N06K |
Виробник: Goford Semiconductor
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
на замовлення 3495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 44.67 грн |
10+ | 36.53 грн |
100+ | 25.36 грн |
500+ | 18.58 грн |
1000+ | 15.1 грн |
G250N03IE |
Виробник: GOFORD Semiconductor
N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3847+ | 3.2 грн |
G250N03IE |
Виробник: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
товар відсутній
G250N03IE |
Виробник: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
на замовлення 2576 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.08 грн |
18+ | 16.98 грн |
100+ | 8.59 грн |
500+ | 6.57 грн |
1000+ | 4.88 грн |
G25N06K |
Виробник: GOFORD Semiconductor
NChannel Enhancement Mode Power MOSFET
NChannel Enhancement Mode Power MOSFET
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 12.78 грн |
15000+ | 11.8 грн |
30000+ | 10.57 грн |
G25N06K |
Виробник: Goford Semiconductor
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 14.68 грн |
G25N06K |
Виробник: Goford Semiconductor
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.89 грн |
10+ | 35.85 грн |
100+ | 24.92 грн |
500+ | 18.26 грн |
1000+ | 14.84 грн |
G26P04D5 |
Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 18.17 грн |
G26P04D5 |
Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
на замовлення 62723 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 50.16 грн |
10+ | 42.11 грн |
100+ | 29.15 грн |
500+ | 22.86 грн |
1000+ | 19.46 грн |
2000+ | 17.33 грн |
G26P04D5 |
Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 13.95 грн |
15000+ | 12.45 грн |
30000+ | 11.17 грн |
50000+ | 9.7 грн |
G26P04K |
Виробник: Goford Semiconductor
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 21.21 грн |
G26P04K |
Виробник: Goford Semiconductor
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
на замовлення 5279 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.86 грн |
10+ | 46.42 грн |
100+ | 35.63 грн |
500+ | 26.43 грн |
1000+ | 21.15 грн |
G28N02T |
Виробник: Goford Semiconductor
Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
товар відсутній
G28N03D3 |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 7.68 грн |
G28N03D3 |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 11.93 грн |
G28N03D3 |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.05 грн |
11+ | 30.04 грн |
100+ | 22.4 грн |
500+ | 16.52 грн |
1000+ | 12.76 грн |
2000+ | 11.64 грн |
G29 |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 15V 4.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Description: MOSFET P-CH 15V 4.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.55 грн |
15000+ | 3.14 грн |
30000+ | 2.79 грн |
G29 |
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3334+ | 3.69 грн |
G29 |
Виробник: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.66 грн |
6000+ | 5.21 грн |
9000+ | 4.5 грн |
G29 |
Виробник: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V
на замовлення 12764 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.35 грн |
15+ | 21.21 грн |
100+ | 10.69 грн |
500+ | 8.19 грн |
1000+ | 6.08 грн |
G2K2P10D3E |
Виробник: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
на замовлення 4870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.32 грн |
10+ | 34.72 грн |
100+ | 24.13 грн |
500+ | 17.68 грн |
1000+ | 14.37 грн |
2000+ | 12.84 грн |
G2K2P10D3E |
Виробник: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
товар відсутній
G2K2P10S2E |
Виробник: Goford Semiconductor
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
G2K2P10S2E |
Виробник: Goford Semiconductor
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3763 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.65 грн |
10+ | 46.34 грн |
100+ | 32.11 грн |
500+ | 25.18 грн |
1000+ | 21.43 грн |
2000+ | 19.09 грн |