Продукція > GOFORD SEMICONDUCTOR > Всі товари виробника GOFORD SEMICONDUCTOR (905) > Сторінка 6 з 16
Фото | Назва | Виробник | Інформація |
Доступність |
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G180N06S2 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товар відсутній |
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G180N06S2 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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G180N06S2 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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G180N06S2 | GOFORD Semiconductor | Dual N-CH,60V,8A,RD(max) Less Than 20mOhm at 10V,RD(max) Less Than 22mOhm at 4.5V,VTH 1.2V to 2.4V,SOP-8 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G18N50T | Goford Semiconductor |
Description: MOSFET N-CH 500V 18A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V Power Dissipation (Max): 189.3W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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G18NP06Y | Goford Semiconductor |
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5 Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 45W (Tc), 50W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA Supplier Device Package: TO-252-4 |
товар відсутній |
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G18NP06Y | Goford Semiconductor |
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5 Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 45W (Tc), 50W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA Supplier Device Package: TO-252-4 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G18P03D3 | Goford Semiconductor |
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V |
на замовлення 5985 шт: термін постачання 21-31 дні (днів) |
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G18P03D3 | Goford Semiconductor |
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G18P03D3 | GOFORD Semiconductor | P-CH,-30V,-28A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.0V to -2.5V,DFN3x3-8L |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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G18P03S | Goford Semiconductor |
Description: MOSFET P-CH 30V 15A SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V FET Feature: Standard Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G18P03S | GOFORD Semiconductor | P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G1K1P06HH | GOFORD Semiconductor | P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G1K1P06HH | Goford Semiconductor |
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V |
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G1K1P06HH | Goford Semiconductor |
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V |
на замовлення 4550 шт: термін постачання 21-31 дні (днів) |
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G1K1P06LH | Goford Semiconductor |
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G1K1P06LH | GOFORD Semiconductor | G1K1P06LH |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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G1K1P06LH | Goford Semiconductor |
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
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G1K1P06LL | GOFORD Semiconductor | P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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G1K1P06LL | Goford Semiconductor |
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V |
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G1K1P06LL | Goford Semiconductor |
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH- Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V |
на замовлення 1856 шт: термін постачання 21-31 дні (днів) |
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G1K2C10S2 | Goford Semiconductor |
Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G1K2C10S2 | Goford Semiconductor |
Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
товар відсутній |
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G1K2C10S2 | Goford Semiconductor |
Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G1K3N10G | Goford Semiconductor |
Description: N100V, 5A,RD<130M@10V,VTH1V~2V, Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V |
на замовлення 738 шт: термін постачання 21-31 дні (днів) |
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G1K3N10G | Goford Semiconductor |
Description: N100V, 5A,RD<130M@10V,VTH1V~2V, Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V |
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G1K3N10LL | Goford Semiconductor |
Description: MOSFET N-CH 100V 3.4A SOT-23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V |
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G1K3N10LL | Goford Semiconductor |
Description: MOSFET N-CH 100V 3.4A SOT-23-6L Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V |
на замовлення 2740 шт: термін постачання 21-31 дні (днів) |
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G1K3N10LL | Goford Semiconductor |
Description: MOSFET N-CH 100V 3.4A SOT-23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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G1K8P06S2 | Goford Semiconductor |
Description: MOSFET 2P-CH 60V 3.2A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
товар відсутній |
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G1K8P06S2 | Goford Semiconductor |
Description: MOSFET 2P-CH 60V 3.2A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3958 шт: термін постачання 21-31 дні (днів) |
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G1NP02LLE | Goford Semiconductor |
Description: MOSFET 20V 1.3A/1.1A SOT23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G1NP02LLE | Goford Semiconductor |
Description: MOSFET 20V 1.3A/1.1A SOT23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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G1NP02LLE | Goford Semiconductor |
Description: MOSFET 20V 1.3A/1.1A SOT23-6L Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G2002A | Goford Semiconductor |
Description: MOSFET N-CH 200V 2A SOT-23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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G2002A | GOFORD Semiconductor | N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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G2002A | Goford Semiconductor |
Description: N200V, 2A,RD<540M@10V,VTH1.0V~3. Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V |
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G2002A | Goford Semiconductor |
Description: N200V, 2A,RD<540M@10V,VTH1.0V~3. Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V |
на замовлення 849 шт: термін постачання 21-31 дні (днів) |
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G2003A | Goford Semiconductor |
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3. Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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G2003A | GOFORD Semiconductor | N-CH,190V,3A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-3L |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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G2003A | Goford Semiconductor |
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3. Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
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G2003A | Goford Semiconductor |
Description: MOSFET N-CH 190V 3A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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G2009G | GOFORD Semiconductor | N-CH,200V,9A,RD(max) Less Than 300mOhm at 10V,VTH 1.0V to 2.5V, TO-252 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G200P04D3 | Goford Semiconductor |
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G200P04D3 | Goford Semiconductor |
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH- Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V |
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G200P04S2 | Goford Semiconductor |
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3147 шт: термін постачання 21-31 дні (днів) |
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G200P04S2 | GOFORD Semiconductor | Dual P-CH,-40V,-9A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -1.0V to -2.5V, SOP-8 |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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G200P04S2 | Goford Semiconductor |
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товар відсутній |
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G2012 | Goford Semiconductor |
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18 Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V |
товар відсутній |
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G2012 | Goford Semiconductor |
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18 Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V |
на замовлення 5994 шт: термін постачання 21-31 дні (днів) |
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G2012 | Goford Semiconductor |
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18 Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G2014 | Goford Semiconductor |
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V |
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G2014 | GOFORD Semiconductor | N-Channel Enhancement Mode Power MOSFET |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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G2014 | Goford Semiconductor |
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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G20N03D2 | Goford Semiconductor |
Description: N30V,RD(MAX)<24M@10V,RD(MAX)<29M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 30 V |
на замовлення 4308 шт: термін постачання 21-31 дні (днів) |
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G20N03D2 | Goford Semiconductor |
Description: MOSFET N-CH 30V 9A DFN2*2-6L Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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G20N03D2 | GOFORD Semiconductor | N-Channel Enhancement Mode Power MOSFET |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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G20N03D2 | Goford Semiconductor |
Description: N30V,RD(MAX)<24M@10V,RD(MAX)<29M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 30 V |
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G20N03K | Goford Semiconductor |
Description: N30V,RD(MAX)<20M@10V,RD(MAX)<24M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G20N03K | Goford Semiconductor |
Description: N30V,RD(MAX)<20M@10V,RD(MAX)<24M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 15 V |
на замовлення 343 шт: термін постачання 21-31 дні (днів) |
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G180N06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
G180N06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 58 грн |
10+ | 47.85 грн |
100+ | 33.13 грн |
500+ | 25.98 грн |
1000+ | 22.11 грн |
2000+ | 19.69 грн |
G180N06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 19.11 грн |
16000+ | 17.01 грн |
G180N06S2 |
Виробник: GOFORD Semiconductor
Dual N-CH,60V,8A,RD(max) Less Than 20mOhm at 10V,RD(max) Less Than 22mOhm at 4.5V,VTH 1.2V to 2.4V,SOP-8
Dual N-CH,60V,8A,RD(max) Less Than 20mOhm at 10V,RD(max) Less Than 22mOhm at 4.5V,VTH 1.2V to 2.4V,SOP-8
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 20.34 грн |
G18N50T |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 500V 18A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V
Power Dissipation (Max): 189.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V
Description: MOSFET N-CH 500V 18A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V
Power Dissipation (Max): 189.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 161.45 грн |
10+ | 129.13 грн |
G18NP06Y |
Виробник: Goford Semiconductor
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
товар відсутній
G18NP06Y |
Виробник: Goford Semiconductor
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
Description: MOSFET N+P-CH 60V 18A/-18A 45W/5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.48 грн |
10+ | 52.68 грн |
100+ | 36.45 грн |
500+ | 28.58 грн |
1000+ | 24.33 грн |
G18P03D3 |
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
на замовлення 5985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 61.13 грн |
10+ | 51.4 грн |
100+ | 39.39 грн |
500+ | 29.22 грн |
1000+ | 23.37 грн |
G18P03D3 |
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 23.44 грн |
G18P03D3 |
Виробник: GOFORD Semiconductor
P-CH,-30V,-28A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.0V to -2.5V,DFN3x3-8L
P-CH,-30V,-28A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.0V to -2.5V,DFN3x3-8L
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 15.78 грн |
G18P03S |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 15A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET P-CH 30V 15A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 14.76 грн |
G18P03S |
Виробник: GOFORD Semiconductor
P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8
P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 15.78 грн |
G1K1P06HH |
Виробник: GOFORD Semiconductor
P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223
P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 6.88 грн |
G1K1P06HH |
Виробник: Goford Semiconductor
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
товар відсутній
G1K1P06HH |
Виробник: Goford Semiconductor
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
на замовлення 4550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.08 грн |
16+ | 19.02 грн |
100+ | 11.4 грн |
500+ | 9.91 грн |
1000+ | 6.74 грн |
G1K1P06LH |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.54 грн |
G1K1P06LH |
Виробник: GOFORD Semiconductor
G1K1P06LH
G1K1P06LH
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.1 грн |
15000+ | 3.77 грн |
G1K1P06LH |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
товар відсутній
G1K1P06LL |
Виробник: GOFORD Semiconductor
P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L
P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.08 грн |
G1K1P06LL |
Виробник: Goford Semiconductor
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
товар відсутній
G1K1P06LL |
Виробник: Goford Semiconductor
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
на замовлення 1856 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.22 грн |
16+ | 19.47 грн |
100+ | 9.8 грн |
500+ | 8.15 грн |
1000+ | 6.34 грн |
G1K2C10S2 |
Виробник: Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 17.95 грн |
G1K2C10S2 |
Виробник: Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
товар відсутній
G1K2C10S2 |
Виробник: Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 15.56 грн |
G1K3N10G |
Виробник: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
на замовлення 738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.64 грн |
10+ | 90.57 грн |
100+ | 72.08 грн |
500+ | 57.23 грн |
G1K3N10G |
Виробник: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
товар відсутній
G1K3N10LL |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
товар відсутній
G1K3N10LL |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.22 грн |
16+ | 19.32 грн |
100+ | 9.73 грн |
500+ | 8.09 грн |
1000+ | 6.3 грн |
G1K3N10LL |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.36 грн |
G1K8P06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
товар відсутній
G1K8P06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.7 грн |
12+ | 25.36 грн |
100+ | 15.21 грн |
500+ | 13.21 грн |
1000+ | 8.98 грн |
2000+ | 8.27 грн |
G1NP02LLE |
Виробник: Goford Semiconductor
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.76 грн |
G1NP02LLE |
Виробник: Goford Semiconductor
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.29 грн |
15000+ | 2.9 грн |
30000+ | 2.62 грн |
G1NP02LLE |
Виробник: Goford Semiconductor
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.65 грн |
17+ | 17.81 грн |
100+ | 9 грн |
500+ | 6.89 грн |
1000+ | 5.11 грн |
G2002A |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 200V 2A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Description: MOSFET N-CH 200V 2A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.51 грн |
15000+ | 5.78 грн |
30000+ | 5.23 грн |
G2002A |
Виробник: GOFORD Semiconductor
N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L
N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.37 грн |
15000+ | 6.8 грн |
30000+ | 6.14 грн |
G2002A |
Виробник: Goford Semiconductor
Description: N200V, 2A,RD<540M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Description: N200V, 2A,RD<540M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
товар відсутній
G2002A |
Виробник: Goford Semiconductor
Description: N200V, 2A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Description: N200V, 2A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
на замовлення 849 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.65 грн |
16+ | 19.92 грн |
100+ | 11.97 грн |
500+ | 10.4 грн |
G2003A |
Виробник: Goford Semiconductor
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.65 грн |
16+ | 19.85 грн |
100+ | 11.93 грн |
500+ | 10.37 грн |
G2003A |
Виробник: GOFORD Semiconductor
N-CH,190V,3A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-3L
N-CH,190V,3A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-3L
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.47 грн |
15000+ | 5.98 грн |
30000+ | 5.41 грн |
G2003A |
Виробник: Goford Semiconductor
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
товар відсутній
G2003A |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 190V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 190V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.7 грн |
15000+ | 5.07 грн |
30000+ | 4.58 грн |
G2009G |
Виробник: GOFORD Semiconductor
N-CH,200V,9A,RD(max) Less Than 300mOhm at 10V,VTH 1.0V to 2.5V, TO-252
N-CH,200V,9A,RD(max) Less Than 300mOhm at 10V,VTH 1.0V to 2.5V, TO-252
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 17.04 грн |
G200P04D3 |
Виробник: Goford Semiconductor
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 12.56 грн |
G200P04D3 |
Виробник: Goford Semiconductor
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V
Description: P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2662 pF @ 20 V
товар відсутній
G200P04S2 |
Виробник: Goford Semiconductor
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 71.32 грн |
10+ | 60.15 грн |
100+ | 46.11 грн |
500+ | 34.21 грн |
1000+ | 27.37 грн |
2000+ | 24.8 грн |
G200P04S2 |
Виробник: GOFORD Semiconductor
Dual P-CH,-40V,-9A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -1.0V to -2.5V, SOP-8
Dual P-CH,-40V,-9A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -1.0V to -2.5V, SOP-8
на замовлення 500 шт:
термін постачання 21-31 дні (днів)G200P04S2 |
Виробник: Goford Semiconductor
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
G2012 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
товар відсутній
G2012 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.13 грн |
12+ | 26.72 грн |
100+ | 19.97 грн |
500+ | 14.73 грн |
1000+ | 11.38 грн |
G2012 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.19 грн |
G2014 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
товар відсутній
G2014 |
Виробник: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.95 грн |
G2014 |
Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 30.57 грн |
12+ | 25.66 грн |
100+ | 17.81 грн |
500+ | 13.05 грн |
1000+ | 10.61 грн |
G20N03D2 |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 30 V
Description: N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 30 V
на замовлення 4308 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.22 грн |
15+ | 21.21 грн |
100+ | 12.69 грн |
500+ | 11.02 грн |
1000+ | 7.5 грн |
G20N03D2 |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 9A DFN2*2-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
Description: MOSFET N-CH 30V 9A DFN2*2-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.06 грн |
G20N03D2 |
Виробник: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.88 грн |
G20N03D2 |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 30 V
Description: N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 30 V
товар відсутній
G20N03K |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 15 V
Description: N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 12.89 грн |
G20N03K |
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 15 V
Description: N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 15 V
на замовлення 343 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 38.4 грн |
10+ | 31.47 грн |
100+ | 21.88 грн |