Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3685) > Сторінка 7 з 62
Фото | Назва | Виробник | Інформація |
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AS4C16M16SA-6TIN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-6TIN | Alliance Memory |
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на замовлення 5133 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 1282 шт: термін постачання 14-21 дні (днів) |
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AS4C16M16SA-6TINTR | Alliance Memory |
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на замовлення 1839 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TINTR | ALLIANCE MEMORY |
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AS4C16M16SA-7BCN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TFBGA Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-7BCN | Alliance Memory |
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на замовлення 283 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7BCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 6ns Case: TFBGA55 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V кількість в упаковці: 348 шт |
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AS4C16M16SA-7BCNTR | Alliance Memory |
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AS4C16M16SA-7BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 134 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SA-7TCN | Alliance Memory |
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на замовлення 11386 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 504 шт: термін постачання 14-21 дні (днів) |
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AS4C16M16SA-7TCNTR | Alliance Memory |
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на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-7TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Quantity in set/package: 1000pcs. Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 2461 шт: термін постачання 14-21 дні (днів) |
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AS4C16M16SB-6TIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C16M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SB-7TCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C16M16SB-7TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
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AS4C16M16SB-6BIN | Alliance Memory |
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на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-6BIN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 396 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16SB-6TIN | Alliance Memory |
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на замовлення 834 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-6TIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C16M16SB-6TINTR | Alliance Memory |
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AS4C16M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C16M16SB-7TCN | Alliance Memory |
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на замовлення 2516 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-7TCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C16M16SB-7TCNTR | Alliance Memory |
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на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SB-7TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 256Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C16M32MD1-5BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -25...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C16M32MD1-5BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -25...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C16M32MD1-5BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 1.8V |
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AS4C16M32MD1-5BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C16M32MD1-5BCN | Alliance Memory |
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на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MD1-5BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -25...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C16M32MD1-5BCNTR | Alliance Memory |
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AS4C16M32MD1-5BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -25...85°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 1000 шт |
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AS4C16M32MD1-5BIN | Alliance Memory |
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на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MD1-5BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 1.8V |
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AS4C16M32MD1-5BINTR | Alliance Memory |
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AS4C16M32MD1-5BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 200MHz Access time: 15ns Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 1000 шт |
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AS4C16M32MS-6BIN | Alliance Memory |
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на замовлення 992 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MS-7BCN | Alliance Memory |
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на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MSA-6BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSA-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSA-6BIN | Alliance Memory |
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на замовлення 387 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32MSA-6BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSA-6BINTR | Alliance Memory |
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AS4C16M32MSA-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA90 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 16Mx32bit Access time: 5.5ns |
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AS4C16M32MSB-6BIN | Alliance Memory |
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AS4C16M32MSB-6BINTR | Alliance Memory | DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R |
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AS4C16M32SC-7TIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3...3.6V |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32SC-7TINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3...3.6V |
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AS4C16M32SC-7TIN | Alliance Memory |
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на замовлення 123 шт: термін постачання 21-30 дні (днів) |
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AS4C16M32SC-7TIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3...3.6V кількість в упаковці: 1 шт |
на замовлення 126 шт: термін постачання 14-21 дні (днів) |
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AS4C16M32SC-7TINTR | Alliance Memory |
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AS4C16M32SC-7TINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx32bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP86 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3...3.6V |
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AS4C1G16D4-062BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 1Gx8bit Clock frequency: 1600MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.2V |
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AS4C1G16D4-062BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 1Gx8bit Clock frequency: 1600MHz Access time: 13.75ns Case: FBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.2V |
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AS4C1G16D4-062BCN | Alliance Memory |
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на замовлення 386 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16SA-6TIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 51 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 413.15 грн |
10+ | 328.79 грн |
25+ | 316.96 грн |
50+ | 283.34 грн |
AS4C16M16SA-6TIN |
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Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 5133 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 386.22 грн |
10+ | 336.25 грн |
108+ | 260.76 грн |
216+ | 256.54 грн |
540+ | 238.27 грн |
10044+ | 236.86 грн |
AS4C16M16SA-6TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 1282 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 430.5 грн |
4+ | 290.13 грн |
11+ | 264.45 грн |
108+ | 253.91 грн |
AS4C16M16SA-6TINTR |
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Виробник: Alliance Memory
DRAM 256Mb, SDR, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel, A Die
DRAM 256Mb, SDR, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel, A Die
на замовлення 1839 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 385.4 грн |
10+ | 344.33 грн |
100+ | 261.46 грн |
250+ | 260.76 грн |
500+ | 250.92 грн |
1000+ | 238.27 грн |
2000+ | 229.83 грн |
AS4C16M16SA-6TINTR |
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Виробник: ALLIANCE MEMORY
AS4C16M16SA-6TINTR DRAM memories - integrated circuits
AS4C16M16SA-6TINTR DRAM memories - integrated circuits
товар відсутній
AS4C16M16SA-7BCN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 188 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 443.9 грн |
10+ | 323.27 грн |
25+ | 322.48 грн |
50+ | 298.71 грн |
100+ | 275.06 грн |
AS4C16M16SA-7BCN |
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Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray
на замовлення 283 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 416.56 грн |
10+ | 374.24 грн |
100+ | 284.66 грн |
250+ | 283.95 грн |
348+ | 266.38 грн |
1044+ | 254.43 грн |
2784+ | 246.7 грн |
AS4C16M16SA-7BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
товар відсутній
AS4C16M16SA-7BCNTR |
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Виробник: Alliance Memory
DRAM 256Mb, SDR, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp(.63) Tape and Reel, A Die
DRAM 256Mb, SDR, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp(.63) Tape and Reel, A Die
товар відсутній
AS4C16M16SA-7BCNTR |
![]() |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-7TCN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 134 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 367.42 грн |
10+ | 292.52 грн |
25+ | 280.69 грн |
50+ | 250.39 грн |
100+ | 220.99 грн |
AS4C16M16SA-7TCN |
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Виробник: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 11386 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 328 грн |
10+ | 286.94 грн |
108+ | 219.29 грн |
216+ | 215.78 грн |
540+ | 203.83 грн |
1080+ | 201.02 грн |
2592+ | 199.61 грн |
AS4C16M16SA-7TCN |
![]() ![]() |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 504 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 382.25 грн |
5+ | 266.41 грн |
12+ | 242.49 грн |
108+ | 232.82 грн |
AS4C16M16SA-7TCNTR |
![]() |
Виробник: Alliance Memory
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel, A Die
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel, A Die
на замовлення 840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 328.82 грн |
10+ | 294.22 грн |
100+ | 223.51 грн |
250+ | 222.1 грн |
500+ | 214.37 грн |
1000+ | 208.75 грн |
2000+ | 208.05 грн |
AS4C16M16SA-7TCNTR |
![]() ![]() |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 2461 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 377.52 грн |
4+ | 285.57 грн |
11+ | 260.06 грн |
1000+ | 249.51 грн |
AS4C16M16SB-6TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCNTR |
![]() |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6BIN |
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Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
на замовлення 132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 440.34 грн |
10+ | 396.06 грн |
100+ | 301.53 грн |
250+ | 300.12 грн |
348+ | 288.87 грн |
1044+ | 282.55 грн |
2784+ | 277.63 грн |
AS4C16M16SB-6BIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 396 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 465.19 грн |
10+ | 401.33 грн |
25+ | 374.52 грн |
50+ | 332.39 грн |
100+ | 296.69 грн |
250+ | 296.01 грн |
AS4C16M16SB-6TIN |
![]() |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 834 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 321.44 грн |
10+ | 284.52 грн |
108+ | 223.51 грн |
216+ | 221.4 грн |
540+ | 203.13 грн |
2592+ | 197.5 грн |
5076+ | 188.37 грн |
AS4C16M16SB-6TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SB-7TCN |
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Виробник: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
на замовлення 2516 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 219.76 грн |
10+ | 191.56 грн |
108+ | 165.17 грн |
AS4C16M16SB-7TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C16M16SB-7TCNTR |
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Виробник: Alliance Memory
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 321.44 грн |
10+ | 286.94 грн |
100+ | 217.89 грн |
250+ | 217.18 грн |
500+ | 209.45 грн |
1000+ | 202.42 грн |
2000+ | 191.18 грн |
AS4C16M16SB-7TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BCN |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 440.34 грн |
10+ | 385.55 грн |
100+ | 301.53 грн |
250+ | 288.87 грн |
480+ | 268.49 грн |
1120+ | 267.79 грн |
2560+ | 265.68 грн |
AS4C16M32MD1-5BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M32MD1-5BCNTR |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MD1-5BIN |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 501.84 грн |
10+ | 451.83 грн |
100+ | 342.99 грн |
250+ | 342.29 грн |
480+ | 334.56 грн |
1120+ | 328.94 грн |
2560+ | 324.02 грн |
AS4C16M32MD1-5BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M32MD1-5BINTR |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
товар відсутній
AS4C16M32MD1-5BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M32MS-6BIN |
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Виробник: Alliance Memory
DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
на замовлення 992 шт:
термін постачання 21-30 дні (днів)AS4C16M32MS-7BCN |
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Виробник: Alliance Memory
DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)AS4C16M32MSA-6BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BIN |
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Виробник: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
на замовлення 387 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 407.54 грн |
10+ | 381.51 грн |
AS4C16M32MSA-6BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSA-6BINTR |
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Виробник: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
товар відсутній
AS4C16M32MSA-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
товар відсутній
AS4C16M32MSB-6BIN |
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Виробник: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
товар відсутній
AS4C16M32MSB-6BINTR |
Виробник: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
товар відсутній
AS4C16M32SC-7TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
на замовлення 126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1149.58 грн |
3+ | 1008.89 грн |
108+ | 970.09 грн |
AS4C16M32SC-7TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M32SC-7TIN |
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Виробник: Alliance Memory
DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray
DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray
на замовлення 123 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1211.96 грн |
10+ | 1105.73 грн |
25+ | 936.91 грн |
108+ | 820.23 грн |
216+ | 785.79 грн |
540+ | 780.17 грн |
1080+ | 730.97 грн |
AS4C16M32SC-7TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
кількість в упаковці: 1 шт
на замовлення 126 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1379.49 грн |
3+ | 1257.24 грн |
108+ | 1164.11 грн |
AS4C16M32SC-7TINTR |
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Виробник: Alliance Memory
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C16M32SC-7TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
товар відсутній
AS4C1G16D4-062BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C1G16D4-062BCN |
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Виробник: Alliance Memory
DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray
DRAM DDR4, 16Gb, 1G x 16, 1.2V, 96-Ball FBGA SDRAM, Commercial Temp - Tray
на замовлення 386 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1667.06 грн |
10+ | 1530.08 грн |
25+ | 1284.12 грн |
100+ | 1127.38 грн |
190+ | 1111.22 грн |
570+ | 1081.7 грн |
1140+ | 1031.09 грн |