Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 5 з 62
Фото | Назва | Виробник | Інформація |
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AS4C128M8D3LA-12BAN | Alliance Memory | DRAM DDR3 1G 1.35V 800MHz 128M x 8 |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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AS4C128M8D3LA-12BANTR | Alliance Memory | DRAM DDR3 1G 1.5V 800MHz 128M x 8 |
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AS4C128M8D3LA-12BCN | Alliance Memory | DRAM DDR3 1G 1.35V 800MHz 128M x 8 |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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AS4C128M8D3LA-12BCNTR | Alliance Memory | DRAM DDR3 1G 1.35V 800MHz 128M x 8 |
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AS4C128M8D3LA-12BIN | Alliance Memory | DRAM DDR3 1G 1.35V 800MHz 128M x 8 |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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AS4C128M8D3LA-12BINTR | Alliance Memory | DRAM DDR3 1G 1.35V 800MHz 128M x 8 |
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AS4C128M8D3LB-12BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Memory: 1Gb DRAM Clock frequency: 800MHz Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Operating voltage: 1.35V Kind of package: in-tray Access time: 13.75ns Mounting: SMD Type of integrated circuit: DRAM memory Memory organisation: 128Mx8bit Case: FBGA78 |
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AS4C128M8D3LB-12BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Memory: 1Gb DRAM |
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AS4C128M8D3LB-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Kind of interface: parallel Memory: 1Gb DRAM |
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AS4C128M8D3LB-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Memory: 1Gb DRAM |
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AS4C128M8D3LB-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Memory: 1Gb DRAM Clock frequency: 800MHz Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Operating voltage: 1.35V Kind of package: in-tray Access time: 13.75ns Mounting: SMD Type of integrated circuit: DRAM memory Memory organisation: 128Mx8bit Case: FBGA78 |
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AS4C128M8D3LB-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Memory: 1Gb DRAM |
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AS4C128M8D3LB-12BAN | Alliance Memory | DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B-die), Automotive Temp - Tray |
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AS4C128M8D3LB-12BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Memory: 1Gb DRAM Clock frequency: 800MHz Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Operating voltage: 1.35V Kind of package: in-tray Access time: 13.75ns Mounting: SMD Type of integrated circuit: DRAM memory Memory organisation: 128Mx8bit Case: FBGA78 кількість в упаковці: 242 шт |
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AS4C128M8D3LB-12BANTR | Alliance Memory | DRAM 1G 1.35V 800MHz 128Mx8 DDR3 A-Temp |
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AS4C128M8D3LB-12BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Memory: 1Gb DRAM кількість в упаковці: 2500 шт |
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AS4C128M8D3LB-12BCN | Alliance Memory | DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B die), Commercial Temp - Tray |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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AS4C128M8D3LB-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Kind of interface: parallel Memory: 1Gb DRAM кількість в упаковці: 242 шт |
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AS4C128M8D3LB-12BCNTR | Alliance Memory | DRAM 1G 1.35V 800MHz 128Mx8 DDR3 E-Temp |
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AS4C128M8D3LB-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Memory: 1Gb DRAM кількість в упаковці: 2500 шт |
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AS4C128M8D3LB-12BIN | Alliance Memory | DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B-die) Industrial Temp - Tray |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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AS4C128M8D3LB-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Memory: 1Gb DRAM Clock frequency: 800MHz Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Operating voltage: 1.35V Kind of package: in-tray Access time: 13.75ns Mounting: SMD Type of integrated circuit: DRAM memory Memory organisation: 128Mx8bit Case: FBGA78 кількість в упаковці: 242 шт |
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AS4C128M8D3LB-12BINTR | Alliance Memory | DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp |
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AS4C128M8D3LB-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Operating voltage: 1.35V Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx8bit Access time: 13.75ns Clock frequency: 800MHz Memory: 1Gb DRAM кількість в упаковці: 2500 шт |
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AS4C128M8D3LC-12BCN | Alliance Memory | DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (C-die), Commercial Temp - Tray |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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AS4C128M8D3LC-12BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C128M8D3LC-12BCN - DRAM, DDR3, 1 Gbit, 128M x 8 Bit, 800 MHz, FBGA, 78 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR3 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 1Gbit usEccn: EAR99 Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 800MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 78Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 95°C Speicherkonfiguration: 128M x 8 Bit SVHC: No SVHC (27-Jun-2024) |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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AS4C128M8D3LC-12BIN | Alliance Memory | DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (C-die), Industrial Temp - Tray |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C16M16D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C16M16D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C16M16D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C16M16D1-5BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16D1-5BCN - DRAM, DDR1, 256 Mbit, 16M x 16 Bit, 200 MHz, TFBGA, 60 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR1 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TFBGA Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 2.5V Taktfrequenz, max.: 200MHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 60Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16D1-5BCN | Alliance Memory | DRAM DDR1, 256Mb, 16M x 16, 2.5V, 60 BGA, 200MHz, Commercial Temp - Tray |
на замовлення 456 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 240 шт |
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AS4C16M16D1-5BCNTR | Alliance Memory | DRAM 256M 2.5V 200Mhz 16M x 16 DDR1 |
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AS4C16M16D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C16M16D1-5BIN | Alliance Memory | DRAM DDR1, 256Mb, 16M x 16, 2.5V, BGA, 200 MHz, Industrial Temp - Tray |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 240 шт |
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AS4C16M16D1-5BINTR | Alliance Memory | DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1 |
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AS4C16M16D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Access time: 15ns Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C16M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C16M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 256Mb DRAM Clock frequency: 200MHz Kind of memory: SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 16Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD |
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AS4C16M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C16M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 256Mb DRAM Clock frequency: 200MHz Kind of memory: SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 16Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD |
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AS4C16M16D1A-5TAN | Alliance Memory | DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1 |
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AS4C16M16D1A-5TANTR | Alliance Memory | DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1 |
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AS4C16M16D1A-5TCN | Alliance Memory | DRAM 256Mb, DDR1, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A) |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C16M16D1A-5TCNTR | Alliance Memory | DRAM |
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AS4C16M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 256Mb DRAM Clock frequency: 200MHz Kind of memory: SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 16Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD кількість в упаковці: 1000 шт |
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AS4C16M16D1A-5TIN | Alliance Memory | DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16D1A-5TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16D1A-5TIN - DRAM, DDR1, 256 Mbit, 16M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR1 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 2.5V Taktfrequenz, max.: 200MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 66Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C16M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C16M16D1A-5TINTR | Alliance Memory | DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A), T&R |
на замовлення 992 шт: термін постачання 21-30 дні (днів) |
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AS4C16M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 256Mb DRAM Clock frequency: 200MHz Kind of memory: SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 16Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD кількість в упаковці: 1000 шт |
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AS4C16M16D2-25BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C16M16D2-25BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C16M16D2-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C16M16D2-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.8V |
товар відсутній |
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AS4C16M16D2-25BCN | Alliance Memory | DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400 MHZ, COMMERCIAL TEMP - Tray |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
|
AS4C128M8D3LA-12BAN |
Виробник: Alliance Memory
DRAM DDR3 1G 1.35V 800MHz 128M x 8
DRAM DDR3 1G 1.35V 800MHz 128M x 8
на замовлення 222 шт:
термін постачання 21-30 дні (днів)AS4C128M8D3LA-12BCN |
Виробник: Alliance Memory
DRAM DDR3 1G 1.35V 800MHz 128M x 8
DRAM DDR3 1G 1.35V 800MHz 128M x 8
на замовлення 142 шт:
термін постачання 21-30 дні (днів)AS4C128M8D3LA-12BIN |
Виробник: Alliance Memory
DRAM DDR3 1G 1.35V 800MHz 128M x 8
DRAM DDR3 1G 1.35V 800MHz 128M x 8
на замовлення 222 шт:
термін постачання 21-30 дні (днів)AS4C128M8D3LB-12BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
товар відсутній
AS4C128M8D3LB-12BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
товар відсутній
AS4C128M8D3LB-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 1Gb DRAM
товар відсутній
AS4C128M8D3LB-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
товар відсутній
AS4C128M8D3LB-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
товар відсутній
AS4C128M8D3LB-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
товар відсутній
AS4C128M8D3LB-12BAN |
Виробник: Alliance Memory
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B-die), Automotive Temp - Tray
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B-die), Automotive Temp - Tray
товар відсутній
AS4C128M8D3LB-12BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
кількість в упаковці: 242 шт
товар відсутній
AS4C128M8D3LB-12BANTR |
Виробник: Alliance Memory
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 A-Temp
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 A-Temp
товар відсутній
AS4C128M8D3LB-12BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
товар відсутній
AS4C128M8D3LB-12BCN |
Виробник: Alliance Memory
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B die), Commercial Temp - Tray
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B die), Commercial Temp - Tray
на замовлення 29 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 529.55 грн |
10+ | 416.1 грн |
100+ | 343.12 грн |
242+ | 330.89 грн |
484+ | 317.95 грн |
5082+ | 313.63 грн |
10164+ | 312.91 грн |
AS4C128M8D3LB-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 1Gb DRAM
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 1Gb DRAM
кількість в упаковці: 242 шт
товар відсутній
AS4C128M8D3LB-12BCNTR |
Виробник: Alliance Memory
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 E-Temp
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 E-Temp
товар відсутній
AS4C128M8D3LB-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
товар відсутній
AS4C128M8D3LB-12BIN |
Виробник: Alliance Memory
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B-die) Industrial Temp - Tray
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B-die) Industrial Temp - Tray
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 578.22 грн |
10+ | 545.15 грн |
25+ | 443.11 грн |
100+ | 436.64 грн |
242+ | 417.21 грн |
484+ | 402.83 грн |
AS4C128M8D3LB-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Memory: 1Gb DRAM
Clock frequency: 800MHz
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Operating voltage: 1.35V
Kind of package: in-tray
Access time: 13.75ns
Mounting: SMD
Type of integrated circuit: DRAM memory
Memory organisation: 128Mx8bit
Case: FBGA78
кількість в упаковці: 242 шт
товар відсутній
AS4C128M8D3LB-12BINTR |
Виробник: Alliance Memory
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
товар відсутній
AS4C128M8D3LB-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Operating voltage: 1.35V
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx8bit
Access time: 13.75ns
Clock frequency: 800MHz
Memory: 1Gb DRAM
кількість в упаковці: 2500 шт
товар відсутній
AS4C128M8D3LC-12BCN |
Виробник: Alliance Memory
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (C-die), Commercial Temp - Tray
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (C-die), Commercial Temp - Tray
на замовлення 408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 427.16 грн |
10+ | 373.91 грн |
100+ | 292.05 грн |
210+ | 290.61 грн |
420+ | 272.63 грн |
1050+ | 260.4 грн |
2520+ | 255.36 грн |
AS4C128M8D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C128M8D3LC-12BCN - DRAM, DDR3, 1 Gbit, 128M x 8 Bit, 800 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR3
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 1Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 128M x 8 Bit
SVHC: No SVHC (27-Jun-2024)
Description: ALLIANCE MEMORY - AS4C128M8D3LC-12BCN - DRAM, DDR3, 1 Gbit, 128M x 8 Bit, 800 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR3
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 1Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 128M x 8 Bit
SVHC: No SVHC (27-Jun-2024)
на замовлення 210 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 455.12 грн |
10+ | 366.35 грн |
25+ | 353.44 грн |
50+ | 315.46 грн |
100+ | 280.12 грн |
AS4C128M8D3LC-12BIN |
Виробник: Alliance Memory
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (C-die), Industrial Temp - Tray
DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (C-die), Industrial Temp - Tray
на замовлення 376 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 513.6 грн |
10+ | 450.01 грн |
100+ | 351.03 грн |
210+ | 348.88 грн |
420+ | 328.02 грн |
1050+ | 313.63 грн |
2520+ | 308.59 грн |
AS4C16M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16D1-5BCN - DRAM, DDR1, 256 Mbit, 16M x 16 Bit, 200 MHz, TFBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16D1-5BCN - DRAM, DDR1, 256 Mbit, 16M x 16 Bit, 200 MHz, TFBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 378.46 грн |
10+ | 309.06 грн |
25+ | 295.34 грн |
50+ | 261.51 грн |
100+ | 229.63 грн |
AS4C16M16D1-5BCN |
Виробник: Alliance Memory
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 60 BGA, 200MHz, Commercial Temp - Tray
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 60 BGA, 200MHz, Commercial Temp - Tray
на замовлення 456 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 351.63 грн |
10+ | 315.18 грн |
100+ | 238.82 грн |
240+ | 238.1 грн |
480+ | 229.47 грн |
1200+ | 217.96 грн |
2640+ | 207.17 грн |
AS4C16M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C16M16D1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1-5BIN |
Виробник: Alliance Memory
DRAM DDR1, 256Mb, 16M x 16, 2.5V, BGA, 200 MHz, Industrial Temp - Tray
DRAM DDR1, 256Mb, 16M x 16, 2.5V, BGA, 200 MHz, Industrial Temp - Tray
на замовлення 245 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 394.43 грн |
10+ | 307.73 грн |
100+ | 266.87 грн |
240+ | 256.08 грн |
480+ | 243.85 грн |
2640+ | 236.66 грн |
5040+ | 225.15 грн |
AS4C16M16D1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C16M16D1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 2.5V; 200MHz; 15ns; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
товар відсутній
AS4C16M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C16M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
товар відсутній
AS4C16M16D1A-5TCN |
Виробник: Alliance Memory
DRAM 256Mb, DDR1, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A)
DRAM 256Mb, DDR1, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A)
на замовлення 208 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 261.84 грн |
10+ | 239.07 грн |
108+ | 176.96 грн |
540+ | 170.48 грн |
1080+ | 162.57 грн |
2592+ | 157.53 грн |
5076+ | 149.62 грн |
AS4C16M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C16M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M16D1A-5TIN |
Виробник: Alliance Memory
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A)
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A)
на замовлення 89 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 336.53 грн |
10+ | 306.08 грн |
108+ | 225.87 грн |
2592+ | 224.43 грн |
5076+ | 220.12 грн |
10044+ | 217.96 грн |
AS4C16M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16D1A-5TIN - DRAM, DDR1, 256 Mbit, 16M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 66Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16D1A-5TIN - DRAM, DDR1, 256 Mbit, 16M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 66Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 362.32 грн |
10+ | 300.18 грн |
25+ | 284.85 грн |
50+ | 251.02 грн |
100+ | 218.57 грн |
AS4C16M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C16M16D1A-5TINTR |
Виробник: Alliance Memory
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A), T&R
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A), T&R
на замовлення 992 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 344.92 грн |
10+ | 308.56 грн |
100+ | 234.5 грн |
250+ | 233.78 грн |
500+ | 224.43 грн |
1000+ | 212.2 грн |
2000+ | 206.45 грн |
AS4C16M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 256Mb DRAM
Clock frequency: 200MHz
Kind of memory: SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M16D2-25BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M16D2-25BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M16D2-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C16M16D2-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C16M16D2-25BCN |
Виробник: Alliance Memory
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400 MHZ, COMMERCIAL TEMP - Tray
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400 MHZ, COMMERCIAL TEMP - Tray
на замовлення 206 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 295.41 грн |
10+ | 264.71 грн |
100+ | 223.71 грн |
209+ | 189.18 грн |
5016+ | 186.31 грн |
10032+ | 185.59 грн |