Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3685) > Сторінка 35 з 62
Фото | Назва | Виробник | Інформація |
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AS6C8016-55TINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1500 шт |
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AS6C8016-55ZIN | Alliance Memory |
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на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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AS6C8016-55ZIN | ALLIANCE MEMORY |
![]() tariffCode: 85423245 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Speicherdichte: 8Mbit usEccn: 3A991.b.2.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: -MHz Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 44Pin(s) productTraceability: No Versorgungsspannung, max.: 5.5V Betriebstemperatur, max.: 85°C |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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AS6C8016-55ZIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V кількість в упаковці: 1 шт |
на замовлення 103 шт: термін постачання 14-21 дні (днів) |
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AS6C8016-55ZINTR | Alliance Memory |
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AS6C8016-55ZINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V кількість в упаковці: 1000 шт |
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AS6C8016A-55BINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel Integrated circuit features: LPC Kind of interface: parallel Memory: 8Mb SRAM Mounting: SMD Case: TFBGA48 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 512kx16bit Access time: 55ns |
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AS6C8016A-55ZINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel Mounting: SMD Operating voltage: 3.3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016A-55BIN | Alliance Memory |
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на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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AS6C8016A-55BINTR | Alliance Memory |
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AS6C8016A-55BINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel Integrated circuit features: LPC Kind of interface: parallel Memory: 8Mb SRAM Mounting: SMD Case: TFBGA48 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 512kx16bit Access time: 55ns кількість в упаковці: 1000 шт |
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AS6C8016A-55ZIN | Alliance Memory |
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на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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AS6C8016A-55ZINTR | Alliance Memory |
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на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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AS6C8016A-55ZINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel Mounting: SMD Operating voltage: 3.3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 1000 шт |
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AS6C8016B-45BIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-45BINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-45ZIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-45ZINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-55BIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-55BINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM |
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AS6C8016B-55ZIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-55ZINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM |
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AS6C8016B-45BIN | Alliance Memory |
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AS6C8016B-45BIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 300 шт |
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AS6C8016B-45BINTR | Alliance Memory |
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AS6C8016B-45BINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 45ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6C8016B-45ZIN | Alliance Memory |
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на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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AS6C8016B-45ZIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 1 шт |
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AS6C8016B-45ZINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 45ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6C8016B-55BIN | Alliance Memory |
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AS6C8016B-55BIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 300 шт |
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AS6C8016B-55BINTR | Alliance Memory |
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AS6C8016B-55BINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM Mounting: SMD Operating voltage: 2.7...3.6V Access time: 55ns Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TFBGA48 Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6C8016B-55ZIN | Alliance Memory |
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на замовлення 111 шт: термін постачання 21-30 дні (днів) |
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AS6C8016B-55ZIN | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 1 шт |
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AS6C8016B-55ZINTR | ALLIANCE MEMORY |
![]() Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM Mounting: SMD Operating voltage: 3V Access time: 55ns IC width: 400mils Type of integrated circuit: SRAM memory Integrated circuit features: LPC Memory: 8Mb SRAM Memory organisation: 512kx16bit Case: TSOP44 II Kind of memory: asynchronous; SRAM кількість в упаковці: 2000 шт |
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AS6CE1016A-45ZIN | Alliance Memory |
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AS6CE1016A-45ZIN | ALLIANCE MEMORY |
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на замовлення 135 шт: термін постачання 14-21 дні (днів) |
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AS6CE1016A-45ZINTR | Alliance Memory |
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AS6CE1016A-45ZINTR | ALLIANCE MEMORY |
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AS6CE4016B-45BIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V |
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AS6CE4016B-45BINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V |
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AS6CE4016B-45ZIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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AS6CE4016B-45ZINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V |
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AS6CE4016B-45BIN | Alliance Memory |
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AS6CE4016B-45BIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V кількість в упаковці: 480 шт |
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AS6CE4016B-45BINTR | Alliance Memory | SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 48ball TFBGA, Industrial Grade with ECC, revB, T&R |
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AS6CE4016B-45BINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape Memory: 4Mb SRAM Case: TFBGA48 Operating voltage: 2.7...3.6V кількість в упаковці: 2000 шт |
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AS6CE4016B-45ZIN | Alliance Memory |
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AS6CE4016B-45ZIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: in-tray IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт |
на замовлення 135 шт: термін постачання 14-21 дні (днів) |
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AS6CE4016B-45ZINTR | Alliance Memory | SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 44pin TSOP II, Industrial Grade with ECC, revB, T&R |
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AS6CE4016B-45ZINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 45s Integrated circuit features: LPC Kind of package: reel; tape IC width: 400mils Memory: 4Mb SRAM Case: TSOP44 II Operating voltage: 2.7...3.6V кількість в упаковці: 1000 шт |
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AS7C1024B-12JCN | ALLIANCE MEMORY |
![]() ![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils Mounting: SMD Operating voltage: 4.5...5.5V Memory: 1Mb SRAM Case: SOJ32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast IC width: 400mils Kind of interface: parallel |
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AS7C1024B-12JCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Mounting: SMD Operating voltage: 5V Memory: 1Mb SRAM Case: SOJ32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast IC width: 400mils Kind of interface: parallel |
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AS7C1024B-12JIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils Mounting: SMD Operating voltage: 4.5...5.5V Memory: 1Mb SRAM Case: SOJ32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast IC width: 400mils Kind of interface: parallel |
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AS7C1024B-12JINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Mounting: SMD Operating voltage: 5V Memory: 1Mb SRAM Case: SOJ32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast IC width: 400mils Kind of interface: parallel |
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AS7C1024B-12TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32 Mounting: SMD Operating voltage: 4.5...5.5V Memory: 1Mb SRAM Case: TSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast Kind of interface: parallel |
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AS7C1024B-12TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Mounting: SMD Operating voltage: 5V Memory: 1Mb SRAM Case: TSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast Kind of interface: parallel |
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AS7C1024B-12TJCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils Mounting: SMD Operating voltage: 4.5...5.5V Memory: 1Mb SRAM Case: SOJ32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast IC width: 300mils Kind of interface: parallel |
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AS7C1024B-12TJCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Mounting: SMD Operating voltage: 5V Memory: 1Mb SRAM Case: SOJ32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 12ns Integrated circuit features: fast IC width: 300mils Kind of interface: parallel |
товар відсутній |
AS6C8016-55TINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
товар відсутній
AS6C8016-55ZIN |
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Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
на замовлення 280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 587.12 грн |
10+ | 532.66 грн |
25+ | 452.64 грн |
100+ | 406.25 грн |
270+ | 392.9 грн |
540+ | 360.57 грн |
5130+ | 359.86 грн |
AS6C8016-55ZIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C8016-55ZIN - SRAM, Asynchron, 8 Mbit, 512K x 16 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
Description: ALLIANCE MEMORY - AS6C8016-55ZIN - SRAM, Asynchron, 8 Mbit, 512K x 16 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
на замовлення 135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 610.27 грн |
10+ | 526.69 грн |
25+ | 509.35 грн |
50+ | 461.98 грн |
100+ | 408.87 грн |
AS6C8016-55ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1 шт
на замовлення 103 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 695.42 грн |
3+ | 489.03 грн |
6+ | 445.44 грн |
100+ | 439.29 грн |
AS6C8016-55ZINTR |
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Виробник: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
товар відсутній
AS6C8016-55ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 512kx16bit
Access time: 55ns
товар відсутній
AS6C8016A-55ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016A-55BIN |
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Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 198 шт:
термін постачання 21-30 дні (днів)AS6C8016A-55BINTR |
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Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
товар відсутній
AS6C8016A-55BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 512kx16bit
Access time: 55ns
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TFBGA48; parallel
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TFBGA48
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 512kx16bit
Access time: 55ns
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016A-55ZIN |
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Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 135 шт:
термін постачання 21-30 дні (днів)AS6C8016A-55ZINTR |
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Виробник: Alliance Memory
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)AS6C8016A-55ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3.3V; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating voltage: 3.3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016B-45BIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-55ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
товар відсутній
AS6C8016B-45BIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-45BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 45ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 45ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-45ZIN |
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Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
на замовлення 152 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 517.42 грн |
10+ | 453.45 грн |
100+ | 354.24 грн |
270+ | 351.43 грн |
540+ | 337.37 грн |
1080+ | 330.34 грн |
2565+ | 324.02 грн |
AS6C8016B-45ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-45ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 45ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 45ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55BIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 300 шт
товар відсутній
AS6C8016B-55BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 2.7÷3.6V; 55ns; TFBGA48; 8MbSRAM
Mounting: SMD
Operating voltage: 2.7...3.6V
Access time: 55ns
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TFBGA48
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6C8016B-55ZIN |
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Виробник: Alliance Memory
SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
на замовлення 111 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 517.42 грн |
10+ | 453.45 грн |
100+ | 353.54 грн |
270+ | 349.32 грн |
540+ | 315.58 грн |
1080+ | 314.18 грн |
2565+ | 309.26 грн |
AS6C8016B-55ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 1 шт
товар відсутній
AS6C8016B-55ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
кількість в упаковці: 2000 шт
товар відсутній
AS6CE1016A-45ZIN |
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Виробник: Alliance Memory
SRAM LPSRAM with ECC, 1Mb(64K x 16),2.7V-3.6V, 44pin TSOP II, Industrial, A Die
SRAM LPSRAM with ECC, 1Mb(64K x 16),2.7V-3.6V, 44pin TSOP II, Industrial, A Die
товар відсутній
AS6CE1016A-45ZIN |
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Виробник: ALLIANCE MEMORY
AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ.
AS6CE1016A-45ZIN Parallel SRAM memories - integ. circ.
на замовлення 135 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 351.02 грн |
5+ | 224.04 грн |
13+ | 211.74 грн |
AS6CE1016A-45ZINTR |
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Виробник: Alliance Memory
SRAM LPSRAM with ECC, 1Mb(64K x 16),2.7V-3.6V, 44pin TSOP II, Industrial, A Die,T&R
SRAM LPSRAM with ECC, 1Mb(64K x 16),2.7V-3.6V, 44pin TSOP II, Industrial, A Die,T&R
товар відсутній
AS6CE1016A-45ZINTR |
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Виробник: ALLIANCE MEMORY
AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ.
AS6CE1016A-45ZINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6CE4016B-45BIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
на замовлення 135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 667.04 грн |
2+ | 445.88 грн |
6+ | 421.71 грн |
AS6CE4016B-45ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
товар відсутній
AS6CE4016B-45BIN |
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Виробник: Alliance Memory
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 48ball TFBGA, Industrial Grade with ECC, revB
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 48ball TFBGA, Industrial Grade with ECC, revB
товар відсутній
AS6CE4016B-45BIN |
![]() ![]() |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6CE4016B-45BINTR |
Виробник: Alliance Memory
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 48ball TFBGA, Industrial Grade with ECC, revB, T&R
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 48ball TFBGA, Industrial Grade with ECC, revB, T&R
товар відсутній
AS6CE4016B-45BINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
Memory: 4Mb SRAM
Case: TFBGA48
Operating voltage: 2.7...3.6V
кількість в упаковці: 2000 шт
товар відсутній
AS6CE4016B-45ZIN |
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Виробник: Alliance Memory
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 44pin TSOP II, Industrial Grade with ECC, revB
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 44pin TSOP II, Industrial Grade with ECC, revB
товар відсутній
AS6CE4016B-45ZIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: in-tray
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
на замовлення 135 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 800.45 грн |
2+ | 555.63 грн |
6+ | 506.06 грн |
AS6CE4016B-45ZINTR |
Виробник: Alliance Memory
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 44pin TSOP II, Industrial Grade with ECC, revB, T&R
SRAM LP SRAM, 4Mb (x16) 2.7V-3.6V , 45ns, 44pin TSOP II, Industrial Grade with ECC, revB, T&R
товар відсутній
AS6CE4016B-45ZINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.7÷3.6V; 45s; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45s
Integrated circuit features: LPC
Kind of package: reel; tape
IC width: 400mils
Memory: 4Mb SRAM
Case: TSOP44 II
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS7C1024B-12JCN | ![]() |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
товар відсутній
AS7C1024B-12JCNTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
товар відсутній
AS7C1024B-12JIN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 400mils
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
товар відсутній
AS7C1024B-12JINTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 400mils
Kind of interface: parallel
товар відсутній
AS7C1024B-12TCN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; TSOP32
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
Kind of interface: parallel
товар відсутній
AS7C1024B-12TCNTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
Kind of interface: parallel
товар відсутній
AS7C1024B-12TJCN |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 300mils
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 12ns; SOJ32; 300mils
Mounting: SMD
Operating voltage: 4.5...5.5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 300mils
Kind of interface: parallel
товар відсутній
AS7C1024B-12TJCNTR |
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Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 300mils
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Mounting: SMD
Operating voltage: 5V
Memory: 1Mb SRAM
Case: SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Integrated circuit features: fast
IC width: 300mils
Kind of interface: parallel
товар відсутній