Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 34 з 62
Фото | Назва | Виробник | Інформація |
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AS6C6264A-70PCN | Alliance Memory | SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM |
на замовлення 368 шт: термін постачання 21-30 дні (днів) |
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AS6C6264A-70SCN | Alliance Memory | SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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AS6C6264A-70SCNTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 70ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Access time: 70ns Case: SOP28 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 330mils Operating voltage: 5V кількість в упаковці: 1000 шт |
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AS6C6264A-70SIN | Alliance Memory | SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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AS6C6264A-70SINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 70ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Access time: 70ns Case: SOP28 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 330mils Operating voltage: 5V кількість в упаковці: 1000 шт |
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AS6C6416-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Memory: 64Mb SRAM Operating voltage: 2.7...3.6V Kind of memory: asynchronous; SRAM Memory organisation: 4Mx16bit Access time: 55ns |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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AS6C6416-55BIN | Alliance Memory | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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AS6C6416-55BIN | ALLIANCE MEMORY | AS6C6416-55BIN Parallel SRAM memories - integ. circ. |
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AS6C6416-55BINTR | Alliance Memory | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT |
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AS6C6416-55BINTR | ALLIANCE MEMORY | AS6C6416-55BINTR Parallel SRAM memories - integ. circ. |
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AS6C6416-55TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C6416-55TIN - SRAM, Asynchron, 64 Mbit, 4M x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-I Speicherdichte: 64Mbit usEccn: 3A991.b.1.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: - Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 48Pin(s) Produktpalette: - productTraceability: No Versorgungsspannung, max.: 3.6V Betriebstemperatur, max.: 85°C SRAM: Asynchron Speicherkonfiguration: 4M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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AS6C6416-55TIN | Alliance Memory | SRAM 64M 3V 55ns Low Power 4096k x 16 |
на замовлення 724 шт: термін постачання 21-30 дні (днів) |
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AS6C6416-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Memory: 64Mb SRAM Operating voltage: 2.7...3.6V Kind of memory: asynchronous; SRAM Memory organisation: 4Mx16bit Access time: 55ns кількість в упаковці: 1 шт |
на замовлення 96 шт: термін постачання 14-21 дні (днів) |
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AS6C6416-55TINTR | Alliance Memory | SRAM 64M 3V 55ns Low Power 4048k x 16 |
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AS6C6416-55TINTR | ALLIANCE MEMORY | AS6C6416-55TINTR Parallel SRAM memories - integ. circ. |
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AS6C8008-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.7V |
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AS6C8008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.8V |
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AS6C8008-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V |
на замовлення 974 шт: термін постачання 21-30 дні (днів) |
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AS6C8008-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.6V |
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AS6C8008-55BIN | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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AS6C8008-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.7V кількість в упаковці: 480 шт |
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AS6C8008-55BINTR | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
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AS6C8008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.8V кількість в упаковці: 2000 шт |
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AS6C8008-55ZIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C8008-55ZIN - SRAM, Asynchron, 8 Mbit, 1024K x 8 Bit, TSOP-II, 44 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 8Mbit usEccn: 3A991.b.2.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: - Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 44Pin(s) Produktpalette: - productTraceability: No Versorgungsspannung, max.: 5.5V Betriebstemperatur, max.: 85°C SRAM: Asynchron Speicherkonfiguration: 1024K x 8 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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AS6C8008-55ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray |
на замовлення 1681 шт: термін постачання 21-30 дні (днів) |
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AS6C8008-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V кількість в упаковці: 1 шт |
на замовлення 974 шт: термін постачання 14-21 дні (днів) |
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AS6C8008-55ZINTR | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
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AS6C8008-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.6V кількість в упаковці: 1000 шт |
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AS6C8008A-45BIN | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
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AS6C8008A-45BINTR | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
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AS6C8008A-45ZIN | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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AS6C8008A-45ZINTR | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
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AS6C8008A-55BIN | Alliance Memory | SRAM |
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AS6C8008A-55BINTR | Alliance Memory | SRAM |
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AS6C8008B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
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AS6C8008B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
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AS6C8008B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
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AS6C8008B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
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AS6C8008B-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V |
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AS6C8008B-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V |
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AS6C8008B-45BIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, (B-die), Industrial Temp - Tray |
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AS6C8008B-45BINTR | Alliance Memory | SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V,48ball TFBGA, 45ns, Industrial Temp, B Die, T&R |
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AS6C8008B-45ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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AS6C8008B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V кількість в упаковці: 1 шт |
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AS6C8008B-45ZINTR | Alliance Memory | SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 45ns, Industrial Temp, B Die, T&R |
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AS6C8008B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V кількість в упаковці: 1000 шт |
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AS6C8008B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V кількість в упаковці: 480 шт |
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AS6C8008B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V кількість в упаковці: 2000 шт |
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AS6C8008B-55ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray |
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AS6C8008B-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V кількість в упаковці: 1 шт |
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AS6C8008B-55ZINTR | Alliance Memory | SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R |
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AS6C8008B-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V кількість в упаковці: 1000 шт |
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AS6C8016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V |
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AS6C8016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V |
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AS6C8016-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C8016-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
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AS6C8016-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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AS6C8016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V |
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AS6C8016-55BIN | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM |
на замовлення 151 шт: термін постачання 21-30 дні (днів) |
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AS6C8016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V кількість в упаковці: 480 шт |
товар відсутній |
AS6C6264A-70PCN |
Виробник: Alliance Memory
SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM
SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM
на замовлення 368 шт:
термін постачання 21-30 дні (днів)AS6C6264A-70SCN |
Виробник: Alliance Memory
SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM
SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM
на замовлення 68 шт:
термін постачання 21-30 дні (днів)AS6C6264A-70SCNTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 70ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Access time: 70ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 330mils
Operating voltage: 5V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 70ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Access time: 70ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 330mils
Operating voltage: 5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C6264A-70SIN |
Виробник: Alliance Memory
SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM
SRAM 64K, 4.5-5.5V, 70ns 8K x 8 Asynch SRAM
на замовлення 58 шт:
термін постачання 21-30 дні (днів)AS6C6264A-70SINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 70ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Access time: 70ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 330mils
Operating voltage: 5V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 70ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Access time: 70ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 330mils
Operating voltage: 5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C6416-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 64Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 64Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1640.52 грн |
2+ | 1440.17 грн |
96+ | 1385.47 грн |
AS6C6416-55BIN |
Виробник: Alliance Memory
SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT
SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT
на замовлення 160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2317.93 грн |
10+ | 2148.32 грн |
25+ | 1746.54 грн |
100+ | 1533.62 грн |
220+ | 1532.9 грн |
440+ | 1466 грн |
1100+ | 1439.39 грн |
AS6C6416-55BIN |
Виробник: ALLIANCE MEMORY
AS6C6416-55BIN Parallel SRAM memories - integ. circ.
AS6C6416-55BIN Parallel SRAM memories - integ. circ.
товар відсутній
AS6C6416-55BINTR |
Виробник: ALLIANCE MEMORY
AS6C6416-55BINTR Parallel SRAM memories - integ. circ.
AS6C6416-55BINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6C6416-55TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C6416-55TIN - SRAM, Asynchron, 64 Mbit, 4M x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-I
Speicherdichte: 64Mbit
usEccn: 3A991.b.1.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
SRAM: Asynchron
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS6C6416-55TIN - SRAM, Asynchron, 64 Mbit, 4M x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-I
Speicherdichte: 64Mbit
usEccn: 3A991.b.1.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
SRAM: Asynchron
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 119 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2173.91 грн |
5+ | 2109.35 грн |
10+ | 2043.99 грн |
25+ | 1774.36 грн |
50+ | 1440.74 грн |
AS6C6416-55TIN |
Виробник: Alliance Memory
SRAM 64M 3V 55ns Low Power 4096k x 16
SRAM 64M 3V 55ns Low Power 4096k x 16
на замовлення 724 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2252.47 грн |
10+ | 2087.94 грн |
25+ | 1696.91 грн |
50+ | 1663.1 грн |
96+ | 1492.62 грн |
288+ | 1466.72 грн |
AS6C6416-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 64Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Memory: 64Mb SRAM
Operating voltage: 2.7...3.6V
Kind of memory: asynchronous; SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
кількість в упаковці: 1 шт
на замовлення 96 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1968.62 грн |
2+ | 1794.67 грн |
96+ | 1662.56 грн |
AS6C6416-55TINTR |
Виробник: ALLIANCE MEMORY
AS6C6416-55TINTR Parallel SRAM memories - integ. circ.
AS6C6416-55TINTR Parallel SRAM memories - integ. circ.
товар відсутній
AS6C8008-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
товар відсутній
AS6C8008-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
товар відсутній
AS6C8008-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
на замовлення 974 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 543.07 грн |
2+ | 466.07 грн |
6+ | 440.59 грн |
135+ | 423.36 грн |
AS6C8008-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
товар відсутній
AS6C8008-55BIN |
Виробник: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
на замовлення 330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 616.83 грн |
10+ | 559.21 грн |
25+ | 426.56 грн |
100+ | 413.62 грн |
480+ | 397.07 грн |
960+ | 378.37 грн |
2880+ | 371.9 грн |
AS6C8008-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
кількість в упаковці: 480 шт
товар відсутній
AS6C8008-55BINTR |
Виробник: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
товар відсутній
AS6C8008-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
кількість в упаковці: 2000 шт
товар відсутній
AS6C8008-55ZIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C8008-55ZIN - SRAM, Asynchron, 8 Mbit, 1024K x 8 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
SRAM: Asynchron
Speicherkonfiguration: 1024K x 8 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS6C8008-55ZIN - SRAM, Asynchron, 8 Mbit, 1024K x 8 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
SRAM: Asynchron
Speicherkonfiguration: 1024K x 8 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 78 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 630.22 грн |
10+ | 534.2 грн |
25+ | 521.29 грн |
50+ | 459.32 грн |
AS6C8008-55ZIN |
Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
на замовлення 1681 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 600.88 грн |
10+ | 545.15 грн |
25+ | 463.25 грн |
100+ | 415.06 грн |
270+ | 401.39 грн |
540+ | 369.02 грн |
2565+ | 366.86 грн |
AS6C8008-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1 шт
на замовлення 974 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 651.69 грн |
2+ | 580.79 грн |
6+ | 528.71 грн |
135+ | 508.03 грн |
AS6C8008-55ZINTR |
Виробник: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
товар відсутній
AS6C8008-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8008A-45ZIN |
Виробник: Alliance Memory
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
на замовлення 138 шт:
термін постачання 21-30 дні (днів)AS6C8008B-45ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
товар відсутній
AS6C8008B-45ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
товар відсутній
AS6C8008B-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
товар відсутній
AS6C8008B-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
товар відсутній
AS6C8008B-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
товар відсутній
AS6C8008B-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
товар відсутній
AS6C8008B-45BIN |
Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, (B-die), Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, (B-die), Industrial Temp - Tray
товар відсутній
AS6C8008B-45BINTR |
Виробник: Alliance Memory
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V,48ball TFBGA, 45ns, Industrial Temp, B Die, T&R
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V,48ball TFBGA, 45ns, Industrial Temp, B Die, T&R
товар відсутній
AS6C8008B-45ZIN |
Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
на замовлення 114 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 593.33 грн |
10+ | 538.53 грн |
25+ | 456.78 грн |
100+ | 410.02 грн |
270+ | 394.91 грн |
540+ | 364.7 грн |
1080+ | 363.26 грн |
AS6C8008B-45ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
AS6C8008B-45ZINTR |
Виробник: Alliance Memory
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 45ns, Industrial Temp, B Die, T&R
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 45ns, Industrial Temp, B Die, T&R
товар відсутній
AS6C8008B-45ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8008B-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 480 шт
товар відсутній
AS6C8008B-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
кількість в упаковці: 2000 шт
товар відсутній
AS6C8008B-55ZIN |
Виробник: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray
товар відсутній
AS6C8008B-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
AS6C8008B-55ZINTR |
Виробник: Alliance Memory
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R
товар відсутній
AS6C8008B-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
кількість в упаковці: 1000 шт
товар відсутній
AS6C8016-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
товар відсутній
AS6C8016-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
товар відсутній
AS6C8016-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C8016-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній
AS6C8016-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
на замовлення 350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 569.7 грн |
3+ | 403.88 грн |
6+ | 381.4 грн |
100+ | 367.16 грн |
AS6C8016-55ZINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
товар відсутній
AS6C8016-55BIN |
Виробник: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
на замовлення 151 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 607.6 грн |
10+ | 551.76 грн |
25+ | 420.81 грн |
100+ | 407.86 грн |
250+ | 407.14 грн |
480+ | 387 грн |
960+ | 374.05 грн |
AS6C8016-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
кількість в упаковці: 480 шт
товар відсутній