| Фото | Назва | Виробник | Інформація |
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| VO2631-X006 | VISHAY |
 Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: DIP8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2631 |
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| VO615A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
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| VO617A-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: DIP4 Conform to the norm: UL Turn-on time: 6µs Turn-off time: 25µs Max. off-state voltage: 6V Manufacturer series: VO617A |
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GI2404-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns Case: TO220AB Kind of package: tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Max. forward voltage: 0.895V Load current: 16A Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 125A Leakage current: 0.5mA |
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CRCW2512422RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Mounting: SMD Tolerance: ±1% Case - mm: 6332 Case - inch: 2512 Operating temperature: -55...155°C Type of resistor: thick film Power: 1W Resistance: 422Ω Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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TLMG1100-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V Type of diode: LED Mounting: SMD Case: 0603 LED colour: green Luminosity: 12.5...35mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 20mA Wavelength: 564...575nm Front: flat Operating voltage: 1.8...2.4V |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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TLMG1100-GS15 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V Type of diode: LED Mounting: SMD Case: 0603 LED colour: green Luminosity: 12.5...35mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 20mA Wavelength: 564...575nm Front: flat Operating voltage: 1.8...2.4V |
на замовлення 3735 шт: термін постачання 21-30 дні (днів) |
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MAL211819471E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 100V DC Body dimensions: Ø21x38mm Tolerance: ±20% Leads: axial Service life: 8000h Operating temperature: -55...125°C |
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VS-48CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; Ufmax: 0.83V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Capacitance: 1.22nF Case: TO220AB Max. forward voltage: 0.83V Leakage current: 89mA Max. forward impulse current: 1kA Kind of package: tube |
на замовлення 262 шт: термін постачання 21-30 дні (днів) |
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PR01000105608JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 5.6Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 360 шт: термін постачання 21-30 дні (днів) |
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| SI4948BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -25A Case: SO8 Drain-source voltage: -60V Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET x2 Power dissipation: 2.4W Polarisation: unipolar Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhanced |
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SM8S26AHE3_A/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 157A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Application: automotive industry Technology: PAR® |
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SM8S33AHE3_A/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 124A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Application: automotive industry Technology: PAR® |
на замовлення 936 шт: термін постачання 21-30 дні (днів) |
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| SIHG61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
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| SiHH21N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.8A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHH21N65EF-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHW61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
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| SIS862DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Drain-source voltage: 60V Drain current: 40A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerPAK® 1212-8 |
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SMBZ5926B-E3/5B | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 5µA |
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MAL210265222E3 | VISHAY |
Category: Screw terminal and others el. capacitors Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm Mounting: screw type Capacitance: 2.2mF Operating temperature: -40...85°C Body dimensions: Ø65x105mm Operating voltage: 350V DC Tolerance: ±20% Type of capacitor: electrolytic Service life: 10000h |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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CRCW12065K62FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 5.62kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 6500 шт: термін постачання 21-30 дні (днів) |
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MBB02070C2000FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 200Ω Tolerance: ±1% Power: 0.6W Operating temperature: -55...155°C Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Leads: axial |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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P6SMB13A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB13A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
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P6SMB13A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB13A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
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P6SMB43A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
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P6SMB43A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
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P6SMB43A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
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P6SMB43A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
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SMBJ60CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 67.7V; 6.28A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 67.7V Max. forward impulse current: 6.28A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 5377 шт: термін постачання 21-30 дні (днів) |
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B250C1500G-E4/51 | VISHAY |
Category: Round single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.6A; Ifsm: 50A Max. forward impulse current: 50A Kind of package: bulk Electrical mounting: THT Version: round Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: WOG Leads: wire Ø 0.75mm Max. off-state voltage: 0.4kV Max. forward voltage: 1V Load current: 1.6A |
на замовлення 2414 шт: термін постачання 21-30 дні (днів) |
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MBB02070C3302FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 33kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 33kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 5658 шт: термін постачання 21-30 дні (днів) |
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MBB02070C8253FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 825kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 825kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
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MRS25000C8253FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 825kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Mounting: THT Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Type of resistor: thin film Power: 0.6W Resistance: 825kΩ Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm |
на замовлення 7020 шт: термін постачання 21-30 дні (днів) |
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MAL202127471E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 470uF; 40VDC; Ø10x30mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 40V DC Body dimensions: Ø10x30mm Tolerance: ±20% Leads: axial Service life: 8000h Operating temperature: -40...85°C |
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MBB02070C8259FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 82.5Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Tolerance: ±1% Type of resistor: metal film Mounting: THT Operating temperature: -55...155°C Resistance: 82.5Ω Leads: axial Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm |
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| MRS25000C8259FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 82.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Tolerance: ±1% Type of resistor: thin film Mounting: THT Resistance: 82.5Ω Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm |
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MBB02070C2403FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 240kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 240kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 5387 шт: термін постачання 21-30 дні (днів) |
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| MRS25000C2403FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 240kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 240kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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SA13CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 14.4÷15.9V; 23.3A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 23.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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S07G-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 4pF Case: SMF Max. forward voltage: 1.1V Max. forward impulse current: 25A Leakage current: 50µA Kind of package: reel; tape |
на замовлення 3140 шт: термін постачання 21-30 дні (днів) |
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RS07G-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.4A; 150ns; DO219AB,SMF; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.4A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 9pF Case: DO219AB; SMF Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
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| SIS488DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIS402DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SiS406DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.2A Pulsed drain current: 50A Power dissipation: 2.3W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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| SIS407ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS407DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -25A Pulsed drain current: -40A Power dissipation: 21W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 93.8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W |
товар відсутній |
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| SIS415DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS427EDN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -44.3A Pulsed drain current: -110A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS429DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS434DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 17.6A Pulsed drain current: 60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS435DNT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -30A Pulsed drain current: -80A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 14mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SiS438DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 16A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 17.5W Polarisation: unipolar Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Case: PowerPAK® 1212-8 |
товар відсутній |
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| SIS444DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 70A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS447DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 181nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS454DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 100A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 35A Pulsed drain current: 100A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIS4604LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A Mounting: SMD Drain-source voltage: 60V Drain current: 36.7A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 21.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerPAK® 1212-8 |
товар відсутній |
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| SIS4608LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 28.9A Pulsed drain current: 100A Power dissipation: 17.4W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
| VO2631-X006 |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2631
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2631
товар відсутній
| VO615A-3X006 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO617A-4X006 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
товар відсутній
| GI2404-E3/45 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 0.895V
Load current: 16A
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 0.895V
Load current: 16A
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
товар відсутній
| CRCW2512422RFKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Tolerance: ±1%
Case - mm: 6332
Case - inch: 2512
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Tolerance: ±1%
Case - mm: 6332
Case - inch: 2512
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній
| TLMG1100-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.59 грн |
| 17+ | 21.89 грн |
| TLMG1100-GS15 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
на замовлення 3735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.07 грн |
| 23+ | 17.06 грн |
| 100+ | 10.72 грн |
| 162+ | 5.43 грн |
| 444+ | 5.13 грн |
| MAL211819471E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø21x38mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -55...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø21x38mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -55...125°C
товар відсутній
| VS-48CTQ060-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; Ufmax: 0.83V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 1.22nF
Case: TO220AB
Max. forward voltage: 0.83V
Leakage current: 89mA
Max. forward impulse current: 1kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; Ufmax: 0.83V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 1.22nF
Case: TO220AB
Max. forward voltage: 0.83V
Leakage current: 89mA
Max. forward impulse current: 1kA
Kind of package: tube
на замовлення 262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.49 грн |
| 8+ | 121.51 грн |
| 20+ | 114.72 грн |
| PR01000105608JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 5.6Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 5.6Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.77 грн |
| 300+ | 2.63 грн |
| SI4948BEY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
товар відсутній
| SM8S26AHE3_A/I |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
товар відсутній
| SM8S33AHE3_A/I |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
на замовлення 936 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 178 грн |
| 5+ | 149.44 грн |
| 8+ | 113.96 грн |
| 22+ | 107.93 грн |
| SIHG61N65EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SiHH21N65E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHH21N65EF-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHW61N65EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIS862DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| SMBZ5926B-E3/5B |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| MAL210265222E3 |
|
Виробник: VISHAY
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm
Mounting: screw type
Capacitance: 2.2mF
Operating temperature: -40...85°C
Body dimensions: Ø65x105mm
Operating voltage: 350V DC
Tolerance: ±20%
Type of capacitor: electrolytic
Service life: 10000h
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm
Mounting: screw type
Capacitance: 2.2mF
Operating temperature: -40...85°C
Body dimensions: Ø65x105mm
Operating voltage: 350V DC
Tolerance: ±20%
Type of capacitor: electrolytic
Service life: 10000h
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3018.66 грн |
| CRCW12065K62FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 5.62kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 5.62kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 6500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| 2300+ | 0.38 грн |
| 5000+ | 0.35 грн |
| MBB02070C2000FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 200Ω
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 200Ω
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.38 грн |
| 50+ | 17.96 грн |
| 76+ | 11.62 грн |
| 208+ | 10.94 грн |
| 1000+ | 10.79 грн |
| P6SMB13A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB13A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
товар відсутній
| P6SMB13A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB13A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
товар відсутній
| P6SMB43A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
товар відсутній
| P6SMB43A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
товар відсутній
| P6SMB43A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
товар відсутній
| P6SMB43A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
товар відсутній
| SMBJ60CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 5377 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 15.12 грн |
| 52+ | 7.32 грн |
| 100+ | 6.49 грн |
| 158+ | 5.61 грн |
| 433+ | 5.3 грн |
| B250C1500G-E4/51 |
|
Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.6A; Ifsm: 50A
Max. forward impulse current: 50A
Kind of package: bulk
Electrical mounting: THT
Version: round
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: WOG
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.4kV
Max. forward voltage: 1V
Load current: 1.6A
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.6A; Ifsm: 50A
Max. forward impulse current: 50A
Kind of package: bulk
Electrical mounting: THT
Version: round
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: WOG
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.4kV
Max. forward voltage: 1V
Load current: 1.6A
на замовлення 2414 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.46 грн |
| 10+ | 38.94 грн |
| 25+ | 35.55 грн |
| 55+ | 16.15 грн |
| 151+ | 15.25 грн |
| MBB02070C3302FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 33kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 33kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 33kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 33kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 5658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.57 грн |
| 65+ | 5.89 грн |
| 79+ | 4.8 грн |
| 100+ | 4.39 грн |
| 500+ | 3.51 грн |
| 578+ | 1.52 грн |
| 1588+ | 1.44 грн |
| MBB02070C8253FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 825kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 825kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 825kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 825kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
товар відсутній
| MRS25000C8253FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 825kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Mounting: THT
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Type of resistor: thin film
Power: 0.6W
Resistance: 825kΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: thin film; THT; 825kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Mounting: THT
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Type of resistor: thin film
Power: 0.6W
Resistance: 825kΩ
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
на замовлення 7020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.64 грн |
| 130+ | 2.92 грн |
| 700+ | 1.26 грн |
| 1920+ | 1.19 грн |
| MAL202127471E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 40VDC; Ø10x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 40V DC
Body dimensions: Ø10x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 40VDC; Ø10x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 40V DC
Body dimensions: Ø10x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
товар відсутній
| MBB02070C8259FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 82.5Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 82.5Ω
Leads: axial
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: metal film; THT; 82.5Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 82.5Ω
Leads: axial
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
товар відсутній
| MRS25000C8259FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 82.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Tolerance: ±1%
Type of resistor: thin film
Mounting: THT
Resistance: 82.5Ω
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: thin film; THT; 82.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Tolerance: ±1%
Type of resistor: thin film
Mounting: THT
Resistance: 82.5Ω
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
товар відсутній
| MBB02070C2403FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 240kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 240kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 5387 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.57 грн |
| 49+ | 7.85 грн |
| 71+ | 5.34 грн |
| 100+ | 4.42 грн |
| 500+ | 2.78 грн |
| 579+ | 1.52 грн |
| 1590+ | 1.44 грн |
| 5000+ | 1.4 грн |
| MRS25000C2403FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 240kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 240kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| SA13CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 14.4÷15.9V; 23.3A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 14.4÷15.9V; 23.3A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| S07G-GS08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 3140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.14 грн |
| 300+ | 3.01 грн |
| 800+ | 2.85 грн |
| RS07G-GS08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 150ns; DO219AB,SMF; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.4A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 9pF
Case: DO219AB; SMF
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 150ns; DO219AB,SMF; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.4A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 9pF
Case: DO219AB; SMF
Max. forward voltage: 1.15V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| SIS488DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS402DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SiS406DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Pulsed drain current: 50A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Pulsed drain current: 50A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.68 грн |
| 8+ | 49.06 грн |
| 25+ | 35.47 грн |
| 68+ | 33.96 грн |
| SIS407ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -70A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS407DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -25A
Pulsed drain current: -40A
Power dissipation: 21W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 93.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -25A; Idm: -40A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -25A
Pulsed drain current: -40A
Power dissipation: 21W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 93.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS410DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
товар відсутній
| SIS415DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS427EDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -44.3A
Pulsed drain current: -110A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -44.3A
Pulsed drain current: -110A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS429DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS434DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 60A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS435DNT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SiS438DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.5W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 32A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 17.5W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Case: PowerPAK® 1212-8
товар відсутній
| SIS444DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS447DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 181nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Pulsed drain current: -100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 181nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS454DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS4604LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 36.7A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 36.7A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 36.7A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® 1212-8
товар відсутній
| SIS4608LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28.9A
Pulsed drain current: 100A
Power dissipation: 17.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 28.9A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28.9A
Pulsed drain current: 100A
Power dissipation: 17.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній