Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37656) > Сторінка 379 з 628
Фото | Назва | Виробник | Інформація |
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1N4148WS-HG3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52236 шт: термін постачання 21-31 дні (днів) |
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1N4148WS-HG3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18092 шт: термін постачання 21-31 дні (днів) |
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VS-10CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 3979 шт: термін постачання 21-31 дні (днів) |
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BYG10YHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 5594 шт: термін постачання 21-31 дні (днів) |
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BYG10YHE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6710 шт: термін постачання 21-31 дні (днів) |
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BYG10YHM3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 3139 шт: термін постачання 21-31 дні (днів) |
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BYG10YHM3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Qualification: AEC-Q101 |
на замовлення 19423 шт: термін постачання 21-31 дні (днів) |
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1.5KE250A-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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1.5KE30A-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36.2A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 912 шт: термін постачання 21-31 дні (днів) |
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1N4002-E3/53 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 5560 шт: термін постачання 21-31 дні (днів) |
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1N4003GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 2908 шт: термін постачання 21-31 дні (днів) |
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1N4004GPE-E3/91 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
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1N4005-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 6926 шт: термін постачання 21-31 дні (днів) |
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1N4005GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5426 шт: термін постачання 21-31 дні (днів) |
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1N4007-E3/53 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 2175 шт: термін постачання 21-31 дні (днів) |
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1N4007E-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 1584 шт: термін постачання 21-31 дні (днів) |
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1N4007GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 3559 шт: термін постачання 21-31 дні (днів) |
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1N4007GPE-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 4339 шт: термін постачання 21-31 дні (днів) |
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1N4936GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
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1N4937-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 4771 шт: термін постачання 21-31 дні (днів) |
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1N4937GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 3736 шт: термін постачання 21-31 дні (днів) |
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1N4947GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товар відсутній |
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1N5227B-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 15 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2267 шт: термін постачання 21-31 дні (днів) |
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1N5229B-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9288 шт: термін постачання 21-31 дні (днів) |
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1N4934-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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1N5399GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 5795 шт: термін постачання 21-31 дні (днів) |
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1N5401-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 1489 шт: термін постачання 21-31 дні (днів) |
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1N5402-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 1737 шт: термін постачання 21-31 дні (днів) |
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1N5404-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1282 шт: термін постачання 21-31 дні (днів) |
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1N5406-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
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1N5407-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 1673 шт: термін постачання 21-31 дні (днів) |
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1N5817-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 4792 шт: термін постачання 21-31 дні (днів) |
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BAW76-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4582 шт: термін постачання 21-31 дні (днів) |
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BY228-15TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 2915 шт: термін постачання 21-31 дні (днів) |
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5KP33A-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 93.8A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товар відсутній |
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BY448GP-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1650 V |
на замовлення 518 шт: термін постачання 21-31 дні (днів) |
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BYT52M-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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BYT62-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Avalanche Current - Average Rectified (Io): 350mA Supplier Device Package: SOD-57 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 2400 V |
на замовлення 9166 шт: термін постачання 21-31 дні (днів) |
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BYV26A-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 4620 шт: термін постачання 21-31 дні (днів) |
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BYV26B-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 2902 шт: термін постачання 21-31 дні (днів) |
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BYV26D-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 8867 шт: термін постачання 21-31 дні (днів) |
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BYV27-150-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 165 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 165 V |
на замовлення 5608 шт: термін постачання 21-31 дні (днів) |
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BYV28-150-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 975 шт: термін постачання 21-31 дні (днів) |
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BYV38-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 8857 шт: термін постачання 21-31 дні (днів) |
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BYW34-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1092 шт: термін постачання 21-31 дні (днів) |
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BYW54-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 4255 шт: термін постачання 21-31 дні (днів) |
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BYW55-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 1850 шт: термін постачання 21-31 дні (днів) |
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EGP10G-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
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EGP20B-E3/73 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 3994 шт: термін постачання 21-31 дні (днів) |
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BZT03C180-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±6.39% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 400 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 130 V |
на замовлення 3427 шт: термін постачання 21-31 дні (днів) |
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BZT03C18-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±6.39% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V |
на замовлення 353 шт: термін постачання 21-31 дні (днів) |
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BZT03C12-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5.42% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V |
на замовлення 4284 шт: термін постачання 21-31 дні (днів) |
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BZT03C24-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5.83% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 18 V |
на замовлення 1171 шт: термін постачання 21-31 дні (днів) |
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BZT03C47-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±6.38% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 36 V |
на замовлення 3755 шт: термін постачання 21-31 дні (днів) |
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BZX55B3V3-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18617 шт: термін постачання 21-31 дні (днів) |
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BZX55B3V9-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3964 шт: термін постачання 21-31 дні (днів) |
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BZX55B7V5-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 26432 шт: термін постачання 21-31 дні (днів) |
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BZX55B8V2-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16605 шт: термін постачання 21-31 дні (днів) |
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BZX55C51-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 39 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 29429 шт: термін постачання 21-31 дні (днів) |
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BZX85B13-TAP | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13351 шт: термін постачання 21-31 дні (днів) |
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1N4148WS-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52236 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.09 грн |
18+ | 16.55 грн |
100+ | 8.08 грн |
500+ | 6.33 грн |
1000+ | 4.4 грн |
1N4148WS-HG3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18092 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.09 грн |
18+ | 16.55 грн |
100+ | 8.08 грн |
500+ | 6.33 грн |
1000+ | 4.4 грн |
2000+ | 3.81 грн |
5000+ | 3.48 грн |
VS-10CDU06-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 3979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 103.4 грн |
10+ | 81.49 грн |
100+ | 63.38 грн |
500+ | 50.42 грн |
1000+ | 41.07 грн |
BYG10YHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 5594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
13+ | 24.01 грн |
100+ | 16.69 грн |
500+ | 12.23 грн |
BYG10YHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
13+ | 24.01 грн |
100+ | 16.69 грн |
500+ | 12.23 грн |
1000+ | 9.94 грн |
2000+ | 8.88 грн |
BYG10YHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 3139 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
12+ | 24.75 грн |
100+ | 17.22 грн |
500+ | 12.62 грн |
BYG10YHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
на замовлення 19423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
12+ | 24.75 грн |
100+ | 17.22 грн |
500+ | 12.62 грн |
1000+ | 10.26 грн |
2000+ | 9.17 грн |
1.5KE250A-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 72.99 грн |
10+ | 57.18 грн |
100+ | 44.48 грн |
1.5KE30A-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 912 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.26 грн |
10+ | 46.42 грн |
100+ | 32.14 грн |
500+ | 25.21 грн |
1N4002-E3/53 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 5560 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 19.77 грн |
23+ | 13.25 грн |
100+ | 6.69 грн |
500+ | 5.12 грн |
1000+ | 3.8 грн |
1N4003GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2908 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.54 грн |
10+ | 32.65 грн |
100+ | 22.71 грн |
500+ | 16.64 грн |
1000+ | 13.53 грн |
1N4004GPE-E3/91 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
1N4005-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 6926 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.81 грн |
20+ | 15.3 грн |
100+ | 7.48 грн |
500+ | 5.85 грн |
1000+ | 4.07 грн |
1N4005GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5426 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.54 грн |
10+ | 32.65 грн |
100+ | 22.71 грн |
500+ | 16.64 грн |
1000+ | 13.53 грн |
1N4007-E3/53 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.13 грн |
16+ | 18.89 грн |
100+ | 9.51 грн |
500+ | 7.28 грн |
1000+ | 5.4 грн |
1N4007E-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1584 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.89 грн |
16+ | 19.4 грн |
100+ | 9.8 грн |
500+ | 7.5 грн |
1000+ | 5.56 грн |
1N4007GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 3559 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.85 грн |
14+ | 21.45 грн |
100+ | 14.92 грн |
500+ | 10.93 грн |
1000+ | 9.48 грн |
1N4007GPE-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4339 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.73 грн |
11+ | 29.21 грн |
100+ | 20.34 грн |
500+ | 14.9 грн |
1000+ | 12.11 грн |
1N4936GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.37 грн |
16+ | 18.52 грн |
100+ | 9.33 грн |
500+ | 7.76 грн |
1000+ | 6.04 грн |
1N4937-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4771 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.53 грн |
22+ | 13.69 грн |
100+ | 6.68 грн |
500+ | 5.22 грн |
1000+ | 3.63 грн |
1N4937GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3736 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.45 грн |
11+ | 27.38 грн |
100+ | 19.02 грн |
500+ | 13.94 грн |
1000+ | 11.33 грн |
1N4947GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
1N5227B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
28+ | 10.47 грн |
100+ | 5.09 грн |
500+ | 3.98 грн |
1000+ | 2.77 грн |
2000+ | 2.4 грн |
1N5229B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9288 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
28+ | 10.47 грн |
100+ | 5.09 грн |
500+ | 3.98 грн |
1000+ | 2.77 грн |
2000+ | 2.4 грн |
5000+ | 2.19 грн |
1N4934-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
15+ | 20.5 грн |
100+ | 10.35 грн |
500+ | 7.92 грн |
1N5399GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 5795 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
13+ | 24.23 грн |
100+ | 16.79 грн |
500+ | 13.16 грн |
1000+ | 12.33 грн |
1N5401-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 1489 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.3 грн |
10+ | 33.09 грн |
100+ | 23 грн |
500+ | 16.85 грн |
1N5402-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1737 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.09 грн |
16+ | 18.6 грн |
100+ | 11.14 грн |
500+ | 9.68 грн |
1N5404-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1282 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.54 грн |
10+ | 32.73 грн |
100+ | 22.75 грн |
500+ | 16.67 грн |
1N5406-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 37.25 грн |
10+ | 30.53 грн |
100+ | 21.21 грн |
500+ | 15.54 грн |
1N5407-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1673 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.73 грн |
12+ | 26.43 грн |
100+ | 15.85 грн |
500+ | 13.77 грн |
1N5817-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 4792 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.17 грн |
14+ | 21.23 грн |
100+ | 10.73 грн |
500+ | 8.21 грн |
1000+ | 6.09 грн |
BAW76-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 300MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.45 грн |
32+ | 9.37 грн |
100+ | 4.6 грн |
500+ | 3.6 грн |
1000+ | 2.5 грн |
2000+ | 2.17 грн |
BY228-15TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.2KV 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE AVALANCHE 1.2KV 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 75.27 грн |
10+ | 59.52 грн |
100+ | 46.29 грн |
500+ | 36.82 грн |
1000+ | 29.99 грн |
5KP33A-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
BY448GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.65KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1650 V
Description: DIODE GP 1.65KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1650 V
на замовлення 518 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.82 грн |
10+ | 47.74 грн |
100+ | 37.15 грн |
500+ | 29.55 грн |
BYT52M-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 49.42 грн |
BYT62-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
на замовлення 9166 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.52 грн |
10+ | 73.73 грн |
100+ | 57.34 грн |
500+ | 45.61 грн |
1000+ | 37.16 грн |
2000+ | 34.98 грн |
BYV26A-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4620 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
13+ | 24.23 грн |
100+ | 16.79 грн |
500+ | 13.16 грн |
1000+ | 12.33 грн |
BYV26B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
12+ | 25.19 грн |
100+ | 17.43 грн |
500+ | 13.67 грн |
1000+ | 12.8 грн |
BYV26D-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 8867 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.38 грн |
10+ | 38.44 грн |
100+ | 26.64 грн |
500+ | 20.88 грн |
1000+ | 17.77 грн |
2000+ | 15.83 грн |
BYV27-150-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
на замовлення 5608 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.7 грн |
10+ | 42.98 грн |
100+ | 29.78 грн |
500+ | 23.36 грн |
1000+ | 19.88 грн |
2000+ | 17.7 грн |
BYV28-150-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 92.76 грн |
10+ | 72.99 грн |
100+ | 56.77 грн |
500+ | 45.16 грн |
BYV38-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 8857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.86 грн |
10+ | 37.12 грн |
100+ | 25.72 грн |
500+ | 20.16 грн |
1000+ | 17.16 грн |
2000+ | 15.28 грн |
BYW34-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1092 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.86 грн |
10+ | 37.27 грн |
100+ | 25.82 грн |
500+ | 20.24 грн |
1000+ | 17.22 грн |
BYW54-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 4255 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
12+ | 24.6 грн |
100+ | 17.02 грн |
500+ | 13.34 грн |
1000+ | 12.49 грн |
BYW55-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
12+ | 25.55 грн |
100+ | 17.67 грн |
500+ | 13.85 грн |
1000+ | 12.97 грн |
EGP10G-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
EGP20B-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.82 грн |
10+ | 47.96 грн |
100+ | 37.29 грн |
500+ | 29.66 грн |
1000+ | 24.16 грн |
BZT03C180-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 249VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Description: TVS DIODE 150VWM 249VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
на замовлення 3427 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.58 грн |
10+ | 35.51 грн |
100+ | 24.58 грн |
500+ | 19.27 грн |
1000+ | 16.4 грн |
2000+ | 14.61 грн |
BZT03C18-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 25.6VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Description: TVS DIODE 15VWM 25.6VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.9 грн |
10+ | 39.98 грн |
100+ | 27.65 грн |
BZT03C12-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Description: TVS DIODE 10VWM 17VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
на замовлення 4284 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.74 грн |
10+ | 46.12 грн |
100+ | 35.34 грн |
500+ | 26.22 грн |
1000+ | 20.98 грн |
2000+ | 20.41 грн |
BZT03C24-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 33.8VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Description: TVS DIODE 20VWM 33.8VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.34 грн |
10+ | 35.88 грн |
100+ | 24.83 грн |
500+ | 19.47 грн |
1000+ | 16.57 грн |
BZT03C47-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 39VWM 65.5VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.38%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Description: TVS DIODE 39VWM 65.5VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.38%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
на замовлення 3755 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 48.66 грн |
10+ | 41 грн |
100+ | 31.42 грн |
500+ | 23.31 грн |
1000+ | 18.64 грн |
2000+ | 18.14 грн |
BZX55B3V3-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18617 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.64 грн |
43+ | 6.88 грн |
100+ | 3.37 грн |
500+ | 2.64 грн |
1000+ | 1.83 грн |
2000+ | 1.59 грн |
5000+ | 1.45 грн |
BZX55B3V9-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.21 грн |
30+ | 9.96 грн |
100+ | 4.85 грн |
500+ | 3.8 грн |
1000+ | 2.64 грн |
2000+ | 2.29 грн |
BZX55B7V5-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26432 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.45 грн |
30+ | 9.81 грн |
100+ | 4.79 грн |
500+ | 3.75 грн |
1000+ | 2.6 грн |
2000+ | 2.26 грн |
5000+ | 2.06 грн |
BZX55B8V2-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16605 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.64 грн |
43+ | 6.88 грн |
100+ | 3.37 грн |
500+ | 2.64 грн |
1000+ | 1.83 грн |
2000+ | 1.59 грн |
5000+ | 1.45 грн |
BZX55C51-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 51V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29429 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
28+ | 10.47 грн |
100+ | 5.1 грн |
500+ | 3.99 грн |
1000+ | 2.77 грн |
2000+ | 2.4 грн |
5000+ | 2.19 грн |
BZX85B13-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 13V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13351 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.85 грн |
17+ | 17.35 грн |
100+ | 8.79 грн |
500+ | 6.73 грн |
1000+ | 4.99 грн |
2000+ | 4.2 грн |