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ZMY68-GS08 ZMY68-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 68V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11768 шт:
термін постачання 21-31 дні (днів)
11+28.65 грн
14+ 21.85 грн
100+ 13.13 грн
500+ 11.4 грн
Мінімальне замовлення: 11
ZMY6V8-GS08 ZMY6V8-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 6.8V 1W DO213AB
на замовлення 6944 шт:
термін постачання 21-31 дні (днів)
ZMY75-GS08 ZMY75-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 75V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10387 шт:
термін постачання 21-31 дні (днів)
11+28.65 грн
14+ 21.78 грн
100+ 13.07 грн
500+ 11.36 грн
Мінімальне замовлення: 11
ZMY75-GS18 ZMY75-GS18 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 75V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
11+28.65 грн
14+ 21.78 грн
100+ 13.07 грн
500+ 11.36 грн
1000+ 7.72 грн
2000+ 7.11 грн
Мінімальне замовлення: 11
ZMY8V2-GS08 ZMY8V2-GS08 Vishay General Semiconductor - Diodes Division zmy3v9.pdf Description: DIODE ZENER 8.2V 1W DO213AB
на замовлення 4740 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
12+ 24.75 грн
100+ 16.88 грн
500+ 11.88 грн
Мінімальне замовлення: 10
ZPY100-TR ZPY100-TR Vishay General Semiconductor - Diodes Division zpy3v9.pdf Description: DIODE ZENER 100V 1.3W DO41
на замовлення 4156 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
15+ 19.46 грн
100+ 11.01 грн
500+ 6.84 грн
1000+ 5.25 грн
2000+ 4.56 грн
Мінімальне замовлення: 12
VS-30CTH02S-M3 VS-30CTH02S-M3 Vishay General Semiconductor - Diodes Division vs-30cth02s-m3.pdf Description: DIODE ARRAY GP 200V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 4918 шт:
термін постачання 21-31 дні (днів)
3+104.03 грн
50+ 80.91 грн
100+ 66.58 грн
500+ 52.87 грн
1000+ 44.86 грн
2000+ 42.62 грн
Мінімальне замовлення: 3
VS-HFA04TB60S-M3 VS-HFA04TB60S-M3 Vishay General Semiconductor - Diodes Division vs-hfa04tb60s-m3.pdf Description: DIODE GEN PURP 600V 4A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 5013 шт:
термін постачання 21-31 дні (днів)
9+36.94 грн
50+ 29.39 грн
100+ 21.32 грн
500+ 16.72 грн
1000+ 15.66 грн
Мінімальне замовлення: 9
VS-HFA08TB60S-M3 VS-HFA08TB60S-M3 Vishay General Semiconductor - Diodes Division vs-hfa08tb60s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 18398 шт:
термін постачання 21-31 дні (днів)
7+46.74 грн
50+ 36.81 грн
100+ 26.72 грн
500+ 20.95 грн
1000+ 19.61 грн
Мінімальне замовлення: 7
VS-MURB1020CT-M3 VS-MURB1020CT-M3 Vishay General Semiconductor - Diodes Division vs-murb1020ct-m3.pdf Description: DIODE ARRAY GP 200V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6469 шт:
термін постачання 21-31 дні (днів)
6+53.52 грн
50+ 42.57 грн
100+ 30.89 грн
500+ 24.22 грн
1000+ 20.62 грн
2000+ 18.36 грн
5000+ 17.11 грн
Мінімальне замовлення: 6
VS-MURB2020CT-M3 VS-MURB2020CT-M3 Vishay General Semiconductor - Diodes Division vs-murb2020ct-m3.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
5+69.36 грн
50+ 53.73 грн
100+ 42.58 грн
500+ 33.87 грн
1000+ 27.6 грн
2000+ 25.98 грн
Мінімальне замовлення: 5
VS-MURB820-M3 VS-MURB820-M3 Vishay General Semiconductor - Diodes Division vs-murb820-m3.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4496 шт:
термін постачання 21-31 дні (днів)
5+60.31 грн
10+ 49.87 грн
100+ 34.53 грн
500+ 27.08 грн
1000+ 23.05 грн
2000+ 20.53 грн
Мінімальне замовлення: 5
VS-15ETH03STRR-M3 VS-15ETH03STRR-M3 Vishay General Semiconductor - Diodes Division vs-15eth03s-m3.pdf Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
товар відсутній
VS-15ETH06STRL-M3 VS-15ETH06STRL-M3 Vishay General Semiconductor - Diodes Division vs-15eth06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-15ETX06STRL-M3 Vishay General Semiconductor - Diodes Division vs-15etx06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-15ETX06STRR-M3 Vishay General Semiconductor - Diodes Division vs-15etx06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-16CTU04STRL-M3 VS-16CTU04STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctu04s-m3.pdf Description: DIODE ARRAY GP 400V 8A D2PAK
товар відсутній
VS-16CTU04STRR-M3 VS-16CTU04STRR-M3 Vishay General Semiconductor - Diodes Division vs-16ctu04s-m3.pdf Description: DIODE ARRAY GP 400V 8A D2PAK
товар відсутній
VS-8ETH06STRL-M3 VS-8ETH06STRL-M3 Vishay General Semiconductor - Diodes Division vs-8eth06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETH06STRR-M3 VS-8ETH06STRR-M3 Vishay General Semiconductor - Diodes Division vs-8eth06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETL06STRL-M3 VS-8ETL06STRL-M3 Vishay General Semiconductor - Diodes Division vs-8etl06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
товар відсутній
VS-8ETL06STRR-M3 VS-8ETL06STRR-M3 Vishay General Semiconductor - Diodes Division vs-8etl06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
товар відсутній
VS-HFA04TB60SL-M3 VS-HFA04TB60SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa04tb60s-m3.pdf Description: DIODE GEN PURP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA04TB60SR-M3 VS-HFA04TB60SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa04tb60s-m3.pdf Description: DIODE GEN PURP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA06TB120SL-M3 VS-HFA06TB120SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa06tb120s-m3.pdf Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
товар відсутній
VS-HFA06TB120SR-M3 VS-HFA06TB120SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa06tb120s-m3.pdf Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
товар відсутній
VS-HFA08TA60CSL-M3 VS-HFA08TA60CSL-M3 Vishay General Semiconductor - Diodes Division vs-hfa08ta60cs-m3.pdf Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA08TA60CSR-M3 VS-HFA08TA60CSR-M3 Vishay General Semiconductor - Diodes Division vs-hfa08ta60cs-m3.pdf Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA08TB120SL-M3 VS-HFA08TB120SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa08tb120s-m3.pdf Description: DIODE GP 1200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Current - Average Rectified (Io): 8A
товар відсутній
VS-HFA08TB120SR-M3 VS-HFA08TB120SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa08tb120s-m3.pdf Description: DIODE GP 1200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Current - Average Rectified (Io): 8A
товар відсутній
VS-HFA08TB60SL-M3 VS-HFA08TB60SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa08tb60s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA08TB60SR-M3 VS-HFA08TB60SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa08tb60s-m3.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA15TB60SL-M3 VS-HFA15TB60SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa15tb60s-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-HFA15TB60SR-M3 VS-HFA15TB60SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa15tb60s-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-HFA16TA60CSL-M3 VS-HFA16TA60CSL-M3 Vishay General Semiconductor - Diodes Division vs-hfa16ta60cs-m3.pdf Description: DIODE ARRAY GP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA16TA60CSR-M3 VS-HFA16TA60CSR-M3 Vishay General Semiconductor - Diodes Division vs-hfa16ta60cs-m3.pdf Description: DIODE ARRAY GP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA16TB120SL-M3 VS-HFA16TB120SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa16tb120s-m3.pdf Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
VS-HFA16TB120SR-M3 VS-HFA16TB120SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa16tb120s-m3.pdf Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
VS-HFA25TB60SL-M3 VS-HFA25TB60SL-M3 Vishay General Semiconductor - Diodes Division vs-hfa25tb60s-m3.pdf Description: DIODE GEN PURP 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
VS-HFA25TB60SR-M3 VS-HFA25TB60SR-M3 Vishay General Semiconductor - Diodes Division vs-hfa25tb60s-m3.pdf Description: DIODE GEN PURP 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
VS-HFA30TA60CSL-M3 VS-HFA30TA60CSL-M3 Vishay General Semiconductor - Diodes Division vs-hfa30ta60cs-m3.pdf Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-HFA30TA60CSR-M3 VS-HFA30TA60CSR-M3 Vishay General Semiconductor - Diodes Division vs-hfa30ta60cs-m3.pdf Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-MURB1020CTL-M3 VS-MURB1020CTL-M3 Vishay General Semiconductor - Diodes Division vs-murb1020ct-m3.pdf Description: DIODE ARRAY GP 200V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
VS-MURB1020CTR-M3 VS-MURB1020CTR-M3 Vishay General Semiconductor - Diodes Division vs-murb1020ct-m3.pdf Description: DIODE ARRAY GP 200V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
VS-MURB1520TRR-M3 VS-MURB1520TRR-M3 Vishay General Semiconductor - Diodes Division vs-murb1520-m3-1-m3.pdf Description: DIODE GEN PURP 200V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
VS-MURB1620CTR-M3 VS-MURB1620CTR-M3 Vishay General Semiconductor - Diodes Division vs-murb1620ct-m3.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-MURB2020CTR-M3 VS-MURB2020CTR-M3 Vishay General Semiconductor - Diodes Division vs-murb2020ct-m3.pdf Description: DIODE ARRAY GP 200V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товар відсутній
VS-MURB820TRR-M3 VS-MURB820TRR-M3 Vishay General Semiconductor - Diodes Division vs-murb820-m3.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-15ETH03-1-M3 VS-15ETH03-1-M3 Vishay General Semiconductor - Diodes Division vs-15eth03s-m3.pdf Description: DIODE GEN PURP 300V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
на замовлення 6008 шт:
термін постачання 21-31 дні (днів)
5+62.57 грн
50+ 48.6 грн
100+ 38.5 грн
500+ 30.63 грн
1000+ 30.29 грн
Мінімальне замовлення: 5
VS-15ETH03S-M3 VS-15ETH03S-M3 Vishay General Semiconductor - Diodes Division vs-15eth03s-m3.pdf Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
товар відсутній
VS-15ETH06-1-M3 VS-15ETH06-1-M3 Vishay General Semiconductor - Diodes Division vs-15eth06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-15ETL06-1-M3 VS-15ETL06-1-M3 Vishay General Semiconductor - Diodes Division vs-15etl06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-15ETX06-1-M3 VS-15ETX06-1-M3 Vishay General Semiconductor - Diodes Division vs-15etx06s-m3-1-m3.pdf Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-16CTU04-1-M3 VS-16CTU04-1-M3 Vishay General Semiconductor - Diodes Division vs-16ctu04s-m3.pdf Description: DIODE ARRAY SCHOTTKY 400V TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 8055 шт:
термін постачання 21-31 дні (днів)
4+85.19 грн
10+ 73.54 грн
100+ 57.31 грн
500+ 44.43 грн
1000+ 36.4 грн
Мінімальне замовлення: 4
VS-16CTU04S-M3 VS-16CTU04S-M3 Vishay General Semiconductor - Diodes Division vs-16ctu04s-m3.pdf Description: DIODE ARRAY GP 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)
4+82.17 грн
10+ 65.12 грн
100+ 50.65 грн
500+ 40.29 грн
1000+ 32.82 грн
2000+ 30.9 грн
Мінімальне замовлення: 4
VS-20CTH03-1-M3 VS-20CTH03-1-M3 Vishay General Semiconductor - Diodes Division vs-20cth03s-m3.pdf Description: DIODE ARRAY GP 300V 10A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
3+102.53 грн
50+ 79.16 грн
100+ 62.72 грн
500+ 49.9 грн
Мінімальне замовлення: 3
VS-20CTH03S-M3 VS-20CTH03S-M3 Vishay General Semiconductor - Diodes Division vs-20cth03s-m3.pdf Description: DIODE ARRAY GP 300V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 8010 шт:
термін постачання 21-31 дні (днів)
3+113.83 грн
50+ 88.39 грн
100+ 70.03 грн
500+ 55.71 грн
1000+ 45.38 грн
2000+ 42.72 грн
5000+ 40.02 грн
Мінімальне замовлення: 3
VS-30ETH06-1-M3 VS-30ETH06-1-M3 Vishay General Semiconductor - Diodes Division vs-30eth06s-m3.pdf Description: DIODE GEN PURP 600V 30A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETH06-1-M3 VS-8ETH06-1-M3 Vishay General Semiconductor - Diodes Division vs-8eth06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETL06-1-M3 VS-8ETL06-1-M3 Vishay General Semiconductor - Diodes Division vs-8etl06s-m3.pdf Description: DIODE GEN PURP 600V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
ZMY68-GS08 zmy3v9.pdf
ZMY68-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11768 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.65 грн
14+ 21.85 грн
100+ 13.13 грн
500+ 11.4 грн
Мінімальне замовлення: 11
ZMY6V8-GS08 zmy3v9.pdf
ZMY6V8-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1W DO213AB
на замовлення 6944 шт:
термін постачання 21-31 дні (днів)
ZMY75-GS08 zmy3v9.pdf
ZMY75-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.65 грн
14+ 21.78 грн
100+ 13.07 грн
500+ 11.36 грн
Мінімальне замовлення: 11
ZMY75-GS18 zmy3v9.pdf
ZMY75-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.65 грн
14+ 21.78 грн
100+ 13.07 грн
500+ 11.36 грн
1000+ 7.72 грн
2000+ 7.11 грн
Мінімальне замовлення: 11
ZMY8V2-GS08 zmy3v9.pdf
ZMY8V2-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1W DO213AB
на замовлення 4740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
12+ 24.75 грн
100+ 16.88 грн
500+ 11.88 грн
Мінімальне замовлення: 10
ZPY100-TR zpy3v9.pdf
ZPY100-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W DO41
на замовлення 4156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
15+ 19.46 грн
100+ 11.01 грн
500+ 6.84 грн
1000+ 5.25 грн
2000+ 4.56 грн
Мінімальне замовлення: 12
VS-30CTH02S-M3 vs-30cth02s-m3.pdf
VS-30CTH02S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 4918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+104.03 грн
50+ 80.91 грн
100+ 66.58 грн
500+ 52.87 грн
1000+ 44.86 грн
2000+ 42.62 грн
Мінімальне замовлення: 3
VS-HFA04TB60S-M3 vs-hfa04tb60s-m3.pdf
VS-HFA04TB60S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 5013 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+36.94 грн
50+ 29.39 грн
100+ 21.32 грн
500+ 16.72 грн
1000+ 15.66 грн
Мінімальне замовлення: 9
VS-HFA08TB60S-M3 vs-hfa08tb60s-m3.pdf
VS-HFA08TB60S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 18398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+46.74 грн
50+ 36.81 грн
100+ 26.72 грн
500+ 20.95 грн
1000+ 19.61 грн
Мінімальне замовлення: 7
VS-MURB1020CT-M3 vs-murb1020ct-m3.pdf
VS-MURB1020CT-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6469 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+53.52 грн
50+ 42.57 грн
100+ 30.89 грн
500+ 24.22 грн
1000+ 20.62 грн
2000+ 18.36 грн
5000+ 17.11 грн
Мінімальне замовлення: 6
VS-MURB2020CT-M3 vs-murb2020ct-m3.pdf
VS-MURB2020CT-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.36 грн
50+ 53.73 грн
100+ 42.58 грн
500+ 33.87 грн
1000+ 27.6 грн
2000+ 25.98 грн
Мінімальне замовлення: 5
VS-MURB820-M3 vs-murb820-m3.pdf
VS-MURB820-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.31 грн
10+ 49.87 грн
100+ 34.53 грн
500+ 27.08 грн
1000+ 23.05 грн
2000+ 20.53 грн
Мінімальне замовлення: 5
VS-15ETH03STRR-M3 vs-15eth03s-m3.pdf
VS-15ETH03STRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
товар відсутній
VS-15ETH06STRL-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06STRL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-15ETX06STRL-M3 vs-15etx06s-m3-1-m3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-15ETX06STRR-M3 vs-15etx06s-m3-1-m3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-16CTU04STRL-M3 vs-16ctu04s-m3.pdf
VS-16CTU04STRL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 8A D2PAK
товар відсутній
VS-16CTU04STRR-M3 vs-16ctu04s-m3.pdf
VS-16CTU04STRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 8A D2PAK
товар відсутній
VS-8ETH06STRL-M3 vs-8eth06s-m3.pdf
VS-8ETH06STRL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETH06STRR-M3 vs-8eth06s-m3.pdf
VS-8ETH06STRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETL06STRL-M3 vs-8etl06s-m3.pdf
VS-8ETL06STRL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
товар відсутній
VS-8ETL06STRR-M3 vs-8etl06s-m3.pdf
VS-8ETL06STRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
товар відсутній
VS-HFA04TB60SL-M3 vs-hfa04tb60s-m3.pdf
VS-HFA04TB60SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA04TB60SR-M3 vs-hfa04tb60s-m3.pdf
VS-HFA04TB60SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA06TB120SL-M3 vs-hfa06tb120s-m3.pdf
VS-HFA06TB120SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
товар відсутній
VS-HFA06TB120SR-M3 vs-hfa06tb120s-m3.pdf
VS-HFA06TB120SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
товар відсутній
VS-HFA08TA60CSL-M3 vs-hfa08ta60cs-m3.pdf
VS-HFA08TA60CSL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA08TA60CSR-M3 vs-hfa08ta60cs-m3.pdf
VS-HFA08TA60CSR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
VS-HFA08TB120SL-M3 vs-hfa08tb120s-m3.pdf
VS-HFA08TB120SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Current - Average Rectified (Io): 8A
товар відсутній
VS-HFA08TB120SR-M3 vs-hfa08tb120s-m3.pdf
VS-HFA08TB120SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Current - Average Rectified (Io): 8A
товар відсутній
VS-HFA08TB60SL-M3 vs-hfa08tb60s-m3.pdf
VS-HFA08TB60SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA08TB60SR-M3 vs-hfa08tb60s-m3.pdf
VS-HFA08TB60SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA15TB60SL-M3 vs-hfa15tb60s-m3.pdf
VS-HFA15TB60SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-HFA15TB60SR-M3 vs-hfa15tb60s-m3.pdf
VS-HFA15TB60SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-HFA16TA60CSL-M3 vs-hfa16ta60cs-m3.pdf
VS-HFA16TA60CSL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA16TA60CSR-M3 vs-hfa16ta60cs-m3.pdf
VS-HFA16TA60CSR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
VS-HFA16TB120SL-M3 vs-hfa16tb120s-m3.pdf
VS-HFA16TB120SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
VS-HFA16TB120SR-M3 vs-hfa16tb120s-m3.pdf
VS-HFA16TB120SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
VS-HFA25TB60SL-M3 vs-hfa25tb60s-m3.pdf
VS-HFA25TB60SL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
VS-HFA25TB60SR-M3 vs-hfa25tb60s-m3.pdf
VS-HFA25TB60SR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
VS-HFA30TA60CSL-M3 vs-hfa30ta60cs-m3.pdf
VS-HFA30TA60CSL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-HFA30TA60CSR-M3 vs-hfa30ta60cs-m3.pdf
VS-HFA30TA60CSR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-MURB1020CTL-M3 vs-murb1020ct-m3.pdf
VS-MURB1020CTL-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
VS-MURB1020CTR-M3 vs-murb1020ct-m3.pdf
VS-MURB1020CTR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
VS-MURB1520TRR-M3 vs-murb1520-m3-1-m3.pdf
VS-MURB1520TRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
VS-MURB1620CTR-M3 vs-murb1620ct-m3.pdf
VS-MURB1620CTR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-MURB2020CTR-M3 vs-murb2020ct-m3.pdf
VS-MURB2020CTR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товар відсутній
VS-MURB820TRR-M3 vs-murb820-m3.pdf
VS-MURB820TRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-15ETH03-1-M3 vs-15eth03s-m3.pdf
VS-15ETH03-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
на замовлення 6008 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+62.57 грн
50+ 48.6 грн
100+ 38.5 грн
500+ 30.63 грн
1000+ 30.29 грн
Мінімальне замовлення: 5
VS-15ETH03S-M3 vs-15eth03s-m3.pdf
VS-15ETH03S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
товар відсутній
VS-15ETH06-1-M3 vs-15eth06s-m3-1-m3.pdf
VS-15ETH06-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-15ETL06-1-M3 vs-15etl06s-m3-1-m3.pdf
VS-15ETL06-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
VS-15ETX06-1-M3 vs-15etx06s-m3-1-m3.pdf
VS-15ETX06-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-16CTU04-1-M3 vs-16ctu04s-m3.pdf
VS-16CTU04-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 400V TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 8055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+85.19 грн
10+ 73.54 грн
100+ 57.31 грн
500+ 44.43 грн
1000+ 36.4 грн
Мінімальне замовлення: 4
VS-16CTU04S-M3 vs-16ctu04s-m3.pdf
VS-16CTU04S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+82.17 грн
10+ 65.12 грн
100+ 50.65 грн
500+ 40.29 грн
1000+ 32.82 грн
2000+ 30.9 грн
Мінімальне замовлення: 4
VS-20CTH03-1-M3 vs-20cth03s-m3.pdf
VS-20CTH03-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 10A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+102.53 грн
50+ 79.16 грн
100+ 62.72 грн
500+ 49.9 грн
Мінімальне замовлення: 3
VS-20CTH03S-M3 vs-20cth03s-m3.pdf
VS-20CTH03S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 8010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+113.83 грн
50+ 88.39 грн
100+ 70.03 грн
500+ 55.71 грн
1000+ 45.38 грн
2000+ 42.72 грн
5000+ 40.02 грн
Мінімальне замовлення: 3
VS-30ETH06-1-M3 vs-30eth06s-m3.pdf
VS-30ETH06-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETH06-1-M3 vs-8eth06s-m3.pdf
VS-8ETH06-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETL06-1-M3 vs-8etl06s-m3.pdf
VS-8ETL06-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
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