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MMSZ5237B RHG MMSZ5237B RHG Taiwan Semiconductor Corporation MMSZ5221B%20series_H2007.pdf Description: DIODE ZENER 8.2V 500MW SOD123F
товар відсутній
SMCJ100CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SMCJ100CA R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SMCJ100CAH SMCJ100CAH Taiwan Semiconductor Corporation Description: TVS DIODE 100VWM 162VC DO214AB
товар відсутній
SMCJ100CA R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
BZX585B5V1 RKG BZX585B5V1 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 5.1V 200MW SOD523F
товар відсутній
MBR1650 Taiwan Semiconductor Corporation MBR1635 - 60.pdf MBR1630_1660_Rev8.pdf Description: DIODE SCHOTTKY 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
MBR1650H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
S2KA S2KA Taiwan Semiconductor Corporation S2AA%20SERIES_K2102.pdf Description: DIODE GEN PURP 800V 1.5A DO214AC
товар відсутній
HS2KA HS2KA Taiwan Semiconductor Corporation pdf.php?pn=HS2KA Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
SMCJ100CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SR1204 SR1204 Taiwan Semiconductor Corporation pdf.php?pn=SR1204 Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
1250+29.57 грн
Мінімальне замовлення: 1250
SR1204H SR1204H Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
SR1204 B0G SR1204 B0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
SR1204HB0G SR1204HB0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
SR1204HA0G SR1204HA0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
BZW04-171H BZW04-171H Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 171VWM 274VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SFF2006G SFF2006G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
4+88.2 грн
50+ 68.6 грн
100+ 54.37 грн
500+ 43.25 грн
Мінімальне замовлення: 4
SFF2006GH SFF2006GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+88.2 грн
50+ 68.6 грн
100+ 54.37 грн
500+ 43.25 грн
1000+ 35.23 грн
Мінімальне замовлення: 4
ES2BFS ES2BFS Taiwan Semiconductor Corporation pdf.php?pn=ES2BFS Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
ES2BFS ES2BFS Taiwan Semiconductor Corporation pdf.php?pn=ES2BFS Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 6565 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
13+ 23.59 грн
100+ 14.13 грн
500+ 12.28 грн
1000+ 8.35 грн
2000+ 7.68 грн
5000+ 7.24 грн
Мінімальне замовлення: 10
ES2BAL ES2BAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
3500+8.23 грн
7000+ 7.6 грн
10500+ 6.84 грн
Мінімальне замовлення: 3500
ES2BAL ES2BAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 13708 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
13+ 22.79 грн
100+ 13.68 грн
500+ 11.88 грн
1000+ 8.08 грн
Мінімальне замовлення: 10
ES2B ES2B Taiwan Semiconductor Corporation pdf.php?pn=ES2B Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES2BAH ES2BAH Taiwan Semiconductor Corporation pdf.php?pn=ES2BAH Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ES2BH ES2BH Taiwan Semiconductor Corporation pdf.php?pn=ES2BH Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5SMC68AH 1.5SMC68AH Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC68A R7 1.5SMC68A R7 Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC68A R6G 1.5SMC68A R6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC68A R6 1.5SMC68A R6 Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE110CAH 1.5KE110CAH Taiwan Semiconductor Corporation Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5KE110AH 1.5KE110AH Taiwan Semiconductor Corporation Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSM60NC196CI C0G TSM60NC196CI C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC196CI Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2+245.01 грн
10+ 197.68 грн
100+ 159.95 грн
500+ 133.43 грн
1000+ 114.25 грн
2000+ 107.57 грн
Мінімальне замовлення: 2
TSM60NC165CI C0G TSM60NC165CI C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC165CI Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2+286.47 грн
10+ 231.65 грн
100+ 187.38 грн
500+ 156.31 грн
1000+ 133.84 грн
2000+ 126.02 грн
Мінімальне замовлення: 2
FR151G FR151G Taiwan Semiconductor Corporation FR151G-FR157G%20N0444%20REV.A.pdf Description: DIODE GEN PURP 50V 1.5A DO204AC
товар відсутній
FR151GH FR151GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1.5A DO204AC
товар відсутній
SMAJ36AH SMAJ36AH Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
10+32.42 грн
14+ 21.92 грн
100+ 11.07 грн
500+ 8.47 грн
Мінімальне замовлення: 10
TSM300NB06LDCR RLG TSM300NB06LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+30 грн
5000+ 27.51 грн
Мінімальне замовлення: 2500
TSM300NB06LDCR RLG TSM300NB06LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+72.37 грн
10+ 57.13 грн
100+ 44.44 грн
500+ 35.36 грн
1000+ 28.8 грн
Мінімальне замовлення: 5
TBS610 TBS610 Taiwan Semiconductor Corporation pdf.php?pn=TBS610 Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+46.85 грн
Мінімальне замовлення: 1800
TBS610 TBS610 Taiwan Semiconductor Corporation pdf.php?pn=TBS610 Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
на замовлення 1829 шт:
термін постачання 21-31 дні (днів)
3+106.3 грн
10+ 83.99 грн
100+ 65.34 грн
500+ 51.98 грн
Мінімальне замовлення: 3
SR303 SR303 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
SR303H SR303H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
LL5817 L0G LL5817 L0G Taiwan Semiconductor Corporation LL5817 SERIES_I2006.pdf Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
LL5817-J0 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 1A MELF
товар відсутній
LL5817 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
BZY55C36 RYG BZY55C36 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 36V 500MW 0805
товар відсутній
BZY55B10 RYG BZY55B10 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 10V 500MW 0805
товар відсутній
BZY55C33 RYG BZY55C33 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 33V 500MW 0805
товар відсутній
BZY55C4V3 RYG BZY55C4V3 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 4.3V 500MW 0805
товар відсутній
BZY55C18 RYG BZY55C18 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 18V 500MW 0805
товар відсутній
BZY55C9V1 RYG BZY55C9V1 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 9.1V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
товар відсутній
BZY55C10 RYG BZY55C10 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 10V 500MW 0805
товар відсутній
BZY55B13 RYG BZY55B13 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 13V 500MW 0805
товар відсутній
BZY55B18 RYG BZY55B18 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 18V 500MW 0805
товар відсутній
BZY55C7V5 RYG BZY55C7V5 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 7.5V 500MW 0805
товар відсутній
BZY55B4V7 RYG BZY55B4V7 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 4.7V 500MW 0805
товар відсутній
BZY55B15 RYG BZY55B15 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 15V 500MW 0805
товар відсутній
BZY55B24 RYG BZY55B24 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 24V 500MW 0805
товар відсутній
BZY55C20 RYG BZY55C20 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 20V 500MW 0805
товар відсутній
MMSZ5237B RHG MMSZ5221B%20series_H2007.pdf
MMSZ5237B RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW SOD123F
товар відсутній
SMCJ100CA M6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SMCJ100CA R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SMCJ100CAH
SMCJ100CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC DO214AB
товар відсутній
SMCJ100CA R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
BZX585B5V1 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B5V1 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 200MW SOD523F
товар відсутній
MBR1650 MBR1635 - 60.pdf MBR1630_1660_Rev8.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
MBR1650H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
S2KA S2AA%20SERIES_K2102.pdf
S2KA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
товар відсутній
HS2KA pdf.php?pn=HS2KA
HS2KA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
SMCJ100CA R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SR1204 pdf.php?pn=SR1204
SR1204
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1250+29.57 грн
Мінімальне замовлення: 1250
SR1204H SR1202%20SERIES_G2105.pdf
SR1204H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
SR1204 B0G SR1202%20SERIES_G2105.pdf
SR1204 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
SR1204HB0G SR1202%20SERIES_G2105.pdf
SR1204HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
SR1204HA0G SR1202%20SERIES_G2105.pdf
SR1204HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
BZW04-171H BZW04%20SERIES_J2104.pdf
BZW04-171H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 274VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
SFF2006G
SFF2006G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+88.2 грн
50+ 68.6 грн
100+ 54.37 грн
500+ 43.25 грн
Мінімальне замовлення: 4
SFF2006GH
SFF2006GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+88.2 грн
50+ 68.6 грн
100+ 54.37 грн
500+ 43.25 грн
1000+ 35.23 грн
Мінімальне замовлення: 4
ES2BFS pdf.php?pn=ES2BFS
ES2BFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
ES2BFS pdf.php?pn=ES2BFS
ES2BFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 6565 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
13+ 23.59 грн
100+ 14.13 грн
500+ 12.28 грн
1000+ 8.35 грн
2000+ 7.68 грн
5000+ 7.24 грн
Мінімальне замовлення: 10
ES2BAL
ES2BAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3500+8.23 грн
7000+ 7.6 грн
10500+ 6.84 грн
Мінімальне замовлення: 3500
ES2BAL
ES2BAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 13708 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
13+ 22.79 грн
100+ 13.68 грн
500+ 11.88 грн
1000+ 8.08 грн
Мінімальне замовлення: 10
ES2B pdf.php?pn=ES2B
ES2B
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES2BAH pdf.php?pn=ES2BAH
ES2BAH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ES2BH pdf.php?pn=ES2BH
ES2BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5SMC68AH 1.5SMCH%20SERIES_B2207.pdf
1.5SMC68AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC68A R7 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC68A R6G 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC68A R6 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE110CAH
1.5KE110CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5KE110AH
1.5KE110AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TSM60NC196CI C0G pdf.php?pn=TSM60NC196CI
TSM60NC196CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+245.01 грн
10+ 197.68 грн
100+ 159.95 грн
500+ 133.43 грн
1000+ 114.25 грн
2000+ 107.57 грн
Мінімальне замовлення: 2
TSM60NC165CI C0G pdf.php?pn=TSM60NC165CI
TSM60NC165CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+286.47 грн
10+ 231.65 грн
100+ 187.38 грн
500+ 156.31 грн
1000+ 133.84 грн
2000+ 126.02 грн
Мінімальне замовлення: 2
FR151G FR151G-FR157G%20N0444%20REV.A.pdf
FR151G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
товар відсутній
FR151GH
FR151GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
товар відсутній
SMAJ36AH SMAJ%20SERIES_U2102.pdf
SMAJ36AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.42 грн
14+ 21.92 грн
100+ 11.07 грн
500+ 8.47 грн
Мінімальне замовлення: 10
TSM300NB06LDCR RLG
TSM300NB06LDCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+30 грн
5000+ 27.51 грн
Мінімальне замовлення: 2500
TSM300NB06LDCR RLG
TSM300NB06LDCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+72.37 грн
10+ 57.13 грн
100+ 44.44 грн
500+ 35.36 грн
1000+ 28.8 грн
Мінімальне замовлення: 5
TBS610 pdf.php?pn=TBS610
TBS610
Виробник: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+46.85 грн
Мінімальне замовлення: 1800
TBS610 pdf.php?pn=TBS610
TBS610
Виробник: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
на замовлення 1829 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+106.3 грн
10+ 83.99 грн
100+ 65.34 грн
500+ 51.98 грн
Мінімальне замовлення: 3
SR303
SR303
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
SR303H
SR303H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
LL5817 L0G LL5817 SERIES_I2006.pdf
LL5817 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
LL5817-J0 L0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
товар відсутній
LL5817 L0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
BZY55C36 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C36 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 0805
товар відсутній
BZY55B10 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B10 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
товар відсутній
BZY55C33 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C33 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 0805
товар відсутній
BZY55C4V3 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C4V3 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
товар відсутній
BZY55C18 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C18 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
товар відсутній
BZY55C9V1 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C9V1 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
товар відсутній
BZY55C10 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C10 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
товар відсутній
BZY55B13 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B13 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW 0805
товар відсутній
BZY55B18 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B18 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
товар відсутній
BZY55C7V5 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C7V5 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 0805
товар відсутній
BZY55B4V7 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B4V7 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW 0805
товар відсутній
BZY55B15 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B15 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
товар відсутній
BZY55B24 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B24 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 0805
товар відсутній
BZY55C20 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C20 RYG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
товар відсутній
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