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ES3A M6G ES3A M6G Taiwan Semiconductor Corporation ES3A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3AHM6G ES3AHM6G Taiwan Semiconductor Corporation ES3A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3AH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
S5G R7G S5G R7G Taiwan Semiconductor Corporation S5A%20SERIES_F2102.pdf Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R7G S5G R7G Taiwan Semiconductor Corporation S5A%20SERIES_F2102.pdf Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
SK39A SK39A Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товар відсутній
SK39AH Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товар відсутній
MMBT3906T RSG MMBT3906T RSG Taiwan Semiconductor Corporation MMBT3906T_A2209.pdf Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
товар відсутній
MMBT3906T RSG MMBT3906T RSG Taiwan Semiconductor Corporation MMBT3906T_A2209.pdf Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
20+15.83 грн
27+ 10.82 грн
100+ 5.29 грн
500+ 4.14 грн
1000+ 2.88 грн
Мінімальне замовлення: 20
MBR40150PTH MBR40150PTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX79C56 A0G BZX79C56 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 56V 500MW DO35
товар відсутній
BZX55B27 A0G BZX55B27 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 27V 500MW DO35
товар відсутній
1PGSMB5942 R5G 1PGSMB5942 R5G Taiwan Semiconductor Corporation 1PGSMB5926%20-%201PGSMB5956.pdf Description: DIODE ZENER 51V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)
7+44.48 грн
10+ 36.52 грн
100+ 25.39 грн
Мінімальне замовлення: 7
1PGSMB5942HR5G 1PGSMB5942HR5G Taiwan Semiconductor Corporation 1PGSMB5926%20SERIES_C2102.pdf Description: DIODE ZENER 51V 3W DO214AA
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
7+45.99 грн
10+ 39.06 грн
100+ 29.93 грн
Мінімальне замовлення: 7
1PGSMB5942 1PGSMB5942 Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 3W DO214AA
товар відсутній
1PGSMB5942H 1PGSMB5942H Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Qualification: AEC-Q101
товар відсутній
PGSMAJ58CAHF2G PGSMAJ58CAHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ58CA R3G PGSMAJ58CA R3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ58CAHF4G PGSMAJ58CAHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ58CAHF3G PGSMAJ58CAHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
товар відсутній
PGSMAJ58CAHR2G PGSMAJ58CAHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
товар відсутній
PGSMAJ58CA F4G PGSMAJ58CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
1PGSMC5359 V7G 1PGSMC5359 V7G Taiwan Semiconductor Corporation Description: DIODE ZENER 5W DO214AB
товар відсутній
TLD6S24AH TLD6S24AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
товар відсутній
TLD6S24AH TLD6S24AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
1+459.11 грн
10+ 396.66 грн
100+ 325.01 грн
RS1KFSH RS1KFSH Taiwan Semiconductor Corporation pdf.php?pn=RS1KFSH Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MURF8L60 MURF8L60 Taiwan Semiconductor Corporation pdf.php?pn=MURF8L60 Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURF8L60HC0G MURF8L60HC0G Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
товар відсутній
SK515C M6 Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
товар відсутній
SK515C R6G Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товар відсутній
BZT55B3V3 L1G BZT55B3V3 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
товар відсутній
BZT55B3V3 L0G BZT55B3V3 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
товар відсутній
SF46G SF46G Taiwan Semiconductor Corporation SF41G SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+16.78 грн
2500+ 14.44 грн
Мінімальне замовлення: 1250
SF46GH SF46GH Taiwan Semiconductor Corporation SF41G SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+16.78 грн
2500+ 14.44 грн
Мінімальне замовлення: 1250
MBR25150CTHC0G MBR25150CTHC0G Taiwan Semiconductor Corporation MBR2535CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOT 150V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRF15150CT MBRF15150CT Taiwan Semiconductor Corporation MBRF1535CT SERIES_J2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
MBRF15150CTHC0G MBRF15150CTHC0G Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRF25150CT MBRF25150CT Taiwan Semiconductor Corporation MBRF2535CT SERIES_L2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
MBRF5150HC0G MBRF5150HC0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRF5150H MBRF5150H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 5A ITO220AC
товар відсутній
MBRF25150CTHC0G MBRF25150CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRF5150 C0G MBRF5150 C0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
BZX585B3V3 RKG BZX585B3V3 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.3V 200MW SOD523F
товар відсутній
SMCJ58CAHM6G SMCJ58CAHM6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
товар відсутній
SMCJ58CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SRF20150 SRF20150 Taiwan Semiconductor Corporation SRF2020%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
товар відсутній
TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
товар відсутній
TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)
2+177.91 грн
10+ 153.76 грн
100+ 123.61 грн
500+ 95.31 грн
1000+ 78.97 грн
Мінімальне замовлення: 2
TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+16.78 грн
Мінімальне замовлення: 5000
TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
7+46.74 грн
10+ 38.91 грн
100+ 26.93 грн
500+ 21.12 грн
1000+ 17.97 грн
2000+ 16.01 грн
Мінімальне замовлення: 7
ES3A M6G ES3A%20SERIES_N2102.pdf
ES3A M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3AHM6G ES3A%20SERIES_N2102.pdf
ES3AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3AH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
ES3A R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
S5G R7G S5A%20SERIES_F2102.pdf
S5G R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R7G S5A%20SERIES_F2102.pdf
S5G R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
S5G R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
HS5G R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 5A DO214AB
товар відсутній
SK39A
SK39A
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товар відсутній
SK39AH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товар відсутній
MMBT3906T RSG MMBT3906T_A2209.pdf
MMBT3906T RSG
Виробник: Taiwan Semiconductor Corporation
Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
товар відсутній
MMBT3906T RSG MMBT3906T_A2209.pdf
MMBT3906T RSG
Виробник: Taiwan Semiconductor Corporation
Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.83 грн
27+ 10.82 грн
100+ 5.29 грн
500+ 4.14 грн
1000+ 2.88 грн
Мінімальне замовлення: 20
MBR40150PTH
MBR40150PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX79C56 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C56 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
товар відсутній
BZX55B27 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B27 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW DO35
товар відсутній
1PGSMB5942 R5G 1PGSMB5926%20-%201PGSMB5956.pdf
1PGSMB5942 R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+44.48 грн
10+ 36.52 грн
100+ 25.39 грн
Мінімальне замовлення: 7
1PGSMB5942HR5G 1PGSMB5926%20SERIES_C2102.pdf
1PGSMB5942HR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.99 грн
10+ 39.06 грн
100+ 29.93 грн
Мінімальне замовлення: 7
1PGSMB5942
1PGSMB5942
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
товар відсутній
1PGSMB5942H
1PGSMB5942H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Qualification: AEC-Q101
товар відсутній
PGSMAJ58CAHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ58CA R3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ58CAHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ58CAHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
товар відсутній
PGSMAJ58CAHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHR2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
товар відсутній
PGSMAJ58CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CA F4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
1PGSMC5359 V7G
1PGSMC5359 V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5W DO214AB
товар відсутній
TLD6S24AH TLD6S10AH SERIES_D2103.pdf
TLD6S24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
товар відсутній
TLD6S24AH TLD6S10AH SERIES_D2103.pdf
TLD6S24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+459.11 грн
10+ 396.66 грн
100+ 325.01 грн
RS1KFSH pdf.php?pn=RS1KFSH
RS1KFSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MURF8L60 pdf.php?pn=MURF8L60
MURF8L60
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
MURF8L60HC0G MURF8L60_C2105.pdf
MURF8L60HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
товар відсутній
SK515C M6 SK52C%20SERIES_R2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
товар відсутній
SK515C R6G SK52C%20SERIES_R2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товар відсутній
BZT55B3V3 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
товар відсутній
BZT55B3V3 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
товар відсутній
SF46G SF41G SERIES_G2105.pdf
SF46G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1250+16.78 грн
2500+ 14.44 грн
Мінімальне замовлення: 1250
SF46GH SF41G SERIES_G2105.pdf
SF46GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1250+16.78 грн
2500+ 14.44 грн
Мінімальне замовлення: 1250
MBR25150CTHC0G MBR2535CT%20SERIES_K2104.pdf
MBR25150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRF15150CT MBRF1535CT SERIES_J2105.pdf
MBRF15150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
MBRF15150CTHC0G MBRF1535CT%20SERIES_J2105.pdf
MBRF15150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRF25150CT MBRF2535CT SERIES_L2105.pdf
MBRF25150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
MBRF5150HC0G MBRF5100%20SERIES_H2105.pdf
MBRF5150HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRF5150H
MBRF5150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
товар відсутній
MBRF25150CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF25150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRF5150 C0G MBRF5100%20SERIES_H2105.pdf
MBRF5150 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
BZX585B3V3 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V3 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
товар відсутній
SMCJ58CAHM6G SMCJ%20SERIES_S2104.pdf
SMCJ58CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
товар відсутній
SMCJ58CA R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SRF20150 SRF2020%20SERIES_J2105.pdf
SRF20150
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
товар відсутній
TQM250NB06CR RLG
TQM250NB06CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
товар відсутній
TQM250NB06CR RLG
TQM250NB06CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+177.91 грн
10+ 153.76 грн
100+ 123.61 грн
500+ 95.31 грн
1000+ 78.97 грн
Мінімальне замовлення: 2
TSM250NB06CV RGG
TSM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+16.78 грн
Мінімальне замовлення: 5000
TSM250NB06CV RGG
TSM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+46.74 грн
10+ 38.91 грн
100+ 26.93 грн
500+ 21.12 грн
1000+ 17.97 грн
2000+ 16.01 грн
Мінімальне замовлення: 7
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