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S2AHM4G S2AHM4G Taiwan Semiconductor Corporation S2A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
S2AHR5G S2AHR5G Taiwan Semiconductor Corporation S2A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
SMCJ60A R7G SMCJ60A R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
на замовлення 825 шт:
термін постачання 21-31 дні (днів)
8+42.22 грн
10+ 35.28 грн
100+ 27.09 грн
Мінімальне замовлення: 8
SMCJ45CAH SMCJ45CAH Taiwan Semiconductor Corporation Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMCJ45CA R7G SMCJ45CA R7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
SMCJ45CA V6G SMCJ45CA V6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
SMCJ45CAHR7G SMCJ45CAHR7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
SMCJ45CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
MBR2035PT C0G MBR2035PT C0G Taiwan Semiconductor Corporation MBR2035PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 35V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товар відсутній
SS35 R7G SS35 R7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SS35 R7G SS35 R7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SS35HM6G SS35HM6G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
SS35HR7G SS35HR7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
SS35 M6G SS35 M6G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
SS35 V6G SS35 V6G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SS35 M6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35 R7 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35 R6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35 R6G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
TSM60NC390CH C5G TSM60NC390CH C5G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC390CH Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2+168.11 грн
10+ 134.45 грн
100+ 107.02 грн
500+ 84.98 грн
1000+ 72.11 грн
2000+ 68.5 грн
5000+ 64.85 грн
10000+ 62.7 грн
Мінімальне замовлення: 2
TSM60NC1R5CH C5G TSM60NC1R5CH C5G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC1R5CH Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
на замовлення 14990 шт:
термін постачання 21-31 дні (днів)
4+80.66 грн
10+ 63.67 грн
100+ 49.52 грн
500+ 39.39 грн
1000+ 32.09 грн
2000+ 30.21 грн
5000+ 28.3 грн
10000+ 26.99 грн
Мінімальне замовлення: 4
SK83C SK83C Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 30V 8A DO214AB
товар відсутній
TS431ACX RFG TS431ACX RFG Taiwan Semiconductor Corporation TS431_J2201.pdf Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 10776 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
13+ 23.59 грн
25+ 21.58 грн
100+ 15.07 грн
250+ 13.66 грн
500+ 11.3 грн
1000+ 8.34 грн
Мінімальне замовлення: 10
SMCJ51AHM6G SMCJ51AHM6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
товар відсутній
MBR7150 C0G MBR7150 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 150V 7.5A TO220AC
товар відсутній
MBR790 C0G MBR790 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 90V 7.5A TO220AC
товар відсутній
MBR7100 C0G MBR7100 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 100V 7.5A TO220AC
товар відсутній
MBR745 Taiwan Semiconductor Corporation MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf mbr735-d.pdf mbr7x5.pdf ds23007.pdf Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
TSM60NC390CP ROG TSM60NC390CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC390CP Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
2+168.11 грн
10+ 134.45 грн
100+ 107.02 грн
500+ 84.98 грн
1000+ 72.11 грн
Мінімальне замовлення: 2
TSM60NC390CP ROG TSM60NC390CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC390CP Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+75.8 грн
Мінімальне замовлення: 2500
AZ23C4V7 RFG AZ23C4V7 RFG Taiwan Semiconductor Corporation AZ23C2V7%20SERIES_C14.pdf Description: DIODE ZENER ARRAY 4.7V SOT23
товар відсутній
DBL158G DBL158G Taiwan Semiconductor Corporation DBL151G%20SERIES_L2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBL
товар відсутній
S1DALH S1DALH Taiwan Semiconductor Corporation S1DALH%20SERIES_B2103.pdf Description: DIODE GEN PURP 200V 1A THIN SMA
товар відсутній
S1DALH S1DALH Taiwan Semiconductor Corporation S1DALH%20SERIES_B2103.pdf Description: DIODE GEN PURP 200V 1A THIN SMA
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
11+27.89 грн
15+ 20.11 грн
100+ 12.53 грн
Мінімальне замовлення: 11
S1DAL S1DAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
S1DAL S1DAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
13+ 22.58 грн
100+ 12.81 грн
500+ 7.96 грн
1000+ 6.1 грн
2000+ 5.31 грн
5000+ 4.7 грн
Мінімальне замовлення: 10
S1DLS S1DLS Taiwan Semiconductor Corporation Description: DIODE GP 200V 1.2A SOD123HE
товар відсутній
S1DLS S1DLS Taiwan Semiconductor Corporation Description: DIODE GP 200V 1.2A SOD123HE
товар відсутній
TSD30H100CW TSD30H100CW Taiwan Semiconductor Corporation pdf.php?pn=TSD30H100CW Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
товар відсутній
TSD30H100CW TSD30H100CW Taiwan Semiconductor Corporation pdf.php?pn=TSD30H100CW Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
3+110.82 грн
10+ 87.55 грн
Мінімальне замовлення: 3
1.5SMC33AH Taiwan Semiconductor Corporation Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+21.37 грн
Мінімальне замовлення: 3000
1.5SMC33A R6G 1.5SMC33A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC33A R7 1.5SMC33A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC33A R6 1.5SMC33A R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC9.1A R7G 1.5SMC9.1A R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CA 1.5SMC9.1CA Taiwan Semiconductor Corporation littelfuse_tvs_diode_1_5smc_datasheet.pdf.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CA M6G 1.5SMC9.1CA M6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1A M6G 1.5SMC9.1A M6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CA R7G 1.5SMC9.1CA R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CAHM6G 1.5SMC9.1CAHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
BZT55B3V6 L0G BZT55B3V6 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.6V 500MW MINI MELF
товар відсутній
BZT55B18 L1G BZT55B18 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 18V 500MW MINI MELF
товар відсутній
BZT55C51 L1G BZT55C51 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 51V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
товар відсутній
BZT55B39 L1G BZT55B39 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 39V 500MW MINI MELF
товар відсутній
BZT55B10 L0G BZT55B10 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
BZT55B36 L0G BZT55B36 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 36V 500MW MINI MELF
товар відсутній
UG06AHA0G UG06AHA0G Taiwan Semiconductor Corporation UG06A%20SERIES_G2104.pdf Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UG06AHA1G UG06AHA1G Taiwan Semiconductor Corporation UG06A%20SERIES_G2104.pdf Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TS10P05G TS10P05G Taiwan Semiconductor Corporation TS10P01G%20SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
на замовлення 1112 шт:
термін постачання 21-31 дні (днів)
3+132.68 грн
10+ 114.7 грн
100+ 92.15 грн
500+ 71.05 грн
1000+ 59.13 грн
Мінімальне замовлення: 3
S2AHM4G S2A%20SERIES_N2102.pdf
S2AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
S2AHR5G S2A%20SERIES_N2102.pdf
S2AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
SMCJ60A R7G SMCJ SERIES_R2004.pdf
SMCJ60A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
на замовлення 825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+42.22 грн
10+ 35.28 грн
100+ 27.09 грн
Мінімальне замовлення: 8
SMCJ45CAH
SMCJ45CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMCJ45CA R7G SMCJ%20SERIES_S2104.pdf
SMCJ45CA R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
SMCJ45CA V6G SMCJ%20SERIES_S2104.pdf
SMCJ45CA V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
SMCJ45CAHR7G SMCJ%20SERIES_S2104.pdf
SMCJ45CAHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
SMCJ45CA R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
MBR2035PT C0G MBR2035PT%20SERIES_H2103.pdf
MBR2035PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товар відсутній
SS35 R7G SS32%20SERIES_O2102.pdf
SS35 R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SS35 R7G SS32%20SERIES_O2102.pdf
SS35 R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SS35HM6G SS32%20SERIES_O2102.pdf
SS35HM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
SS35HR7G SS32%20SERIES_O2102.pdf
SS35HR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
SS35 M6G SS32%20SERIES_O2102.pdf
SS35 M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
товар відсутній
SS35 V6G SS32%20SERIES_O2102.pdf
SS35 V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SS35 M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35 R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35 R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35 R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
SS35H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
товар відсутній
TSM60NC390CH C5G pdf.php?pn=TSM60NC390CH
TSM60NC390CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+168.11 грн
10+ 134.45 грн
100+ 107.02 грн
500+ 84.98 грн
1000+ 72.11 грн
2000+ 68.5 грн
5000+ 64.85 грн
10000+ 62.7 грн
Мінімальне замовлення: 2
TSM60NC1R5CH C5G pdf.php?pn=TSM60NC1R5CH
TSM60NC1R5CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
на замовлення 14990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+80.66 грн
10+ 63.67 грн
100+ 49.52 грн
500+ 39.39 грн
1000+ 32.09 грн
2000+ 30.21 грн
5000+ 28.3 грн
10000+ 26.99 грн
Мінімальне замовлення: 4
SK83C SK82C%20SERIES_L2102.pdf
SK83C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 8A DO214AB
товар відсутній
TS431ACX RFG TS431_J2201.pdf
TS431ACX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 10776 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
13+ 23.59 грн
25+ 21.58 грн
100+ 15.07 грн
250+ 13.66 грн
500+ 11.3 грн
1000+ 8.34 грн
Мінімальне замовлення: 10
SMCJ51AHM6G SMCJ SERIES_R2004.pdf
SMCJ51AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
товар відсутній
MBR7150 C0G MBR735%20SERIES_K2103.pdf
MBR7150 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
товар відсутній
MBR790 C0G MBR735%20SERIES_K2103.pdf
MBR790 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 7.5A TO220AC
товар відсутній
MBR7100 C0G MBR735%20SERIES_K2103.pdf
MBR7100 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 7.5A TO220AC
товар відсутній
MBR745 MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf mbr735-d.pdf mbr7x5.pdf ds23007.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
TSM60NC390CP ROG pdf.php?pn=TSM60NC390CP
TSM60NC390CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+168.11 грн
10+ 134.45 грн
100+ 107.02 грн
500+ 84.98 грн
1000+ 72.11 грн
Мінімальне замовлення: 2
TSM60NC390CP ROG pdf.php?pn=TSM60NC390CP
TSM60NC390CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+75.8 грн
Мінімальне замовлення: 2500
AZ23C4V7 RFG AZ23C2V7%20SERIES_C14.pdf
AZ23C4V7 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 4.7V SOT23
товар відсутній
DBL158G DBL151G%20SERIES_L2103.pdf
DBL158G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBL
товар відсутній
S1DALH S1DALH%20SERIES_B2103.pdf
S1DALH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
товар відсутній
S1DALH S1DALH%20SERIES_B2103.pdf
S1DALH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.89 грн
15+ 20.11 грн
100+ 12.53 грн
Мінімальне замовлення: 11
S1DAL
S1DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
S1DAL
S1DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
13+ 22.58 грн
100+ 12.81 грн
500+ 7.96 грн
1000+ 6.1 грн
2000+ 5.31 грн
5000+ 4.7 грн
Мінімальне замовлення: 10
S1DLS
S1DLS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 1.2A SOD123HE
товар відсутній
S1DLS
S1DLS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 1.2A SOD123HE
товар відсутній
TSD30H100CW pdf.php?pn=TSD30H100CW
TSD30H100CW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
товар відсутній
TSD30H100CW pdf.php?pn=TSD30H100CW
TSD30H100CW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+110.82 грн
10+ 87.55 грн
Мінімальне замовлення: 3
1.5SMC33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+21.37 грн
Мінімальне замовлення: 3000
1.5SMC33A R6G
1.5SMC33A R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC33A R7
1.5SMC33A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC33A R6
1.5SMC33A R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC9.1A R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CA littelfuse_tvs_diode_1_5smc_datasheet.pdf.pdf
1.5SMC9.1CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CA M6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1CA M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1A M6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CA R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1CA R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
1.5SMC9.1CAHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товар відсутній
BZT55B3V6 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B3V6 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW MINI MELF
товар відсутній
BZT55B18 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B18 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
товар відсутній
BZT55C51 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C51 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
товар відсутній
BZT55B39 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B39 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW MINI MELF
товар відсутній
BZT55B10 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B10 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
товар відсутній
BZT55B36 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B36 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW MINI MELF
товар відсутній
UG06AHA0G UG06A%20SERIES_G2104.pdf
UG06AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UG06AHA1G UG06A%20SERIES_G2104.pdf
UG06AHA1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TS10P05G TS10P01G%20SERIES_L2203.pdf
TS10P05G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
на замовлення 1112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+132.68 грн
10+ 114.7 грн
100+ 92.15 грн
500+ 71.05 грн
1000+ 59.13 грн
Мінімальне замовлення: 3
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