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TS358CD C3G TS358CD C3G Taiwan Semiconductor Corporation TS358_B15.pdf Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.309", 7.87mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 9972 шт:
термін постачання 21-31 дні (днів)
8+39.68 грн
10+ 33.07 грн
50+ 30.86 грн
100+ 23.17 грн
250+ 21.51 грн
500+ 18.2 грн
1000+ 13.84 грн
2500+ 12.61 грн
5000+ 11.8 грн
Мінімальне замовлення: 8
TS5204CX50 RFG TS5204CX50 RFG Taiwan Semiconductor Corporation TS5204_M2003.pdf Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+19.48 грн
6000+ 17.46 грн
15000+ 16.82 грн
Мінімальне замовлення: 3000
TS5204CX50 RFG TS5204CX50 RFG Taiwan Semiconductor Corporation TS5204_M2003.pdf Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 31942 шт:
термін постачання 21-31 дні (днів)
7+50.36 грн
10+ 42.69 грн
25+ 40.09 грн
100+ 30.71 грн
250+ 28.53 грн
500+ 24.28 грн
1000+ 19.1 грн
Мінімальне замовлення: 7
TS5204CQ33 RFG TS5204CQ33 RFG Taiwan Semiconductor Corporation TS5204_M2003.pdf Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
товар відсутній
TS5204CQ33 RFG TS5204CQ33 RFG Taiwan Semiconductor Corporation TS5204_M2003.pdf Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
6+56.47 грн
10+ 48.05 грн
Мінімальне замовлення: 6
TS79L05CY RMG TS79L05CY RMG Taiwan Semiconductor Corporation TS79L05CY_J2001.pdf Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TSM038N04LCP ROG TSM038N04LCP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
товар відсутній
TSM038N04LCP ROG TSM038N04LCP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
3+112.93 грн
10+ 88.98 грн
100+ 69.17 грн
Мінімальне замовлення: 3
BZD27C18PW BZD27C18PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_D2203.pdf Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+6.51 грн
Мінімальне замовлення: 10000
BZD27C18PW BZD27C18PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_D2203.pdf Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 28262 шт:
термін постачання 21-31 дні (днів)
9+34.34 грн
13+ 23.22 грн
100+ 11.73 грн
500+ 9.75 грн
1000+ 7.59 грн
2000+ 6.79 грн
5000+ 6.53 грн
Мінімальне замовлення: 9
TSM4NB60CH C5G TSM4NB60CH C5G Taiwan Semiconductor Corporation TSM4NB60_L1901.pdf Description: MOSFET N-CH 600V 4A TO251
на замовлення 15180 шт:
термін постачання 21-31 дні (днів)
TS2940CZ33 C0G TS2940CZ33 C0G Taiwan Semiconductor Corporation pdf.php?pn=TS2940CZ33 Description: IC REG LINEAR 3.3V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
товар відсутній
TS2940CZ50 C0G TS2940CZ50 C0G Taiwan Semiconductor Corporation pdf.php?pn=TS2940CZ50 Description: IC REG LINEAR 5V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 3681 шт:
термін постачання 21-31 дні (днів)
3+148.79 грн
10+ 128.59 грн
25+ 121.36 грн
100+ 97.02 грн
250+ 91.11 грн
500+ 79.72 грн
1000+ 64.97 грн
2500+ 60.49 грн
Мінімальне замовлення: 3
SMB10J30AHR5G SMB10J30AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
850+49.15 грн
1700+ 38.55 грн
Мінімальне замовлення: 850
SMB10J30AHR5G SMB10J30AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)
4+90.8 грн
10+ 71.79 грн
100+ 55.84 грн
Мінімальне замовлення: 4
HS2DA R3G HS2DA R3G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
HS2DA R3G HS2DA R3G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 5381 шт:
термін постачання 21-31 дні (днів)
RS2DAL M3G RS2DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
RS2DAL M3G RS2DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
S2DAL M3G Taiwan Semiconductor Corporation Description: 2A, 200V, STANDARD RECOVERY RECT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
S2DAL M3G Taiwan Semiconductor Corporation Description: 2A, 200V, STANDARD RECOVERY RECT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS2DAL M3G HS2DAL M3G Taiwan Semiconductor Corporation Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
HS2DAL M3G HS2DAL M3G Taiwan Semiconductor Corporation Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
RS2DA R3G RS2DA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
RS2DA R3G RS2DA R3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
S2DA M2G S2DA M2G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
RS2DA M2G RS2DA M2G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
S2DA R3G S2DA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
S2DA R3G S2DA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
RS2DAHM2G RS2DAHM2G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
RS2DAHR3G RS2DAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
RS2DAHR3G RS2DAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
SFS1603G MNG SFS1603G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
SFS1603GHMNG SFS1603GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
TSF20U100C C0G TSF20U100C C0G Taiwan Semiconductor Corporation TSF20U100C_E2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)
RS1GL RQG RS1GL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
ES1GL RFG ES1GL RFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS1GL RHG RS1GL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
S1GL RHG S1GL RHG Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
RS1GL RTG RS1GL RTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
товар відсутній
S1GL RTG S1GL RTG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
HS1GL RFG HS1GL RFG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS1GL RFG RS1GL RFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
S1GL RFG S1GL RFG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL RUG HS1GL RUG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
S1GL RVG S1GL RVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
RS1MFS MXG RS1MFS MXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 1000V
товар відсутній
TSM038N03PQ33 RGG TSM038N03PQ33 RGG Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+18.28 грн
10000+ 16.3 грн
Мінімальне замовлення: 5000
TSM038N03PQ33 RGG TSM038N03PQ33 RGG Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 18887 шт:
термін постачання 21-31 дні (днів)
7+50.36 грн
10+ 42.32 грн
100+ 29.33 грн
500+ 23 грн
1000+ 19.58 грн
2000+ 17.44 грн
Мінімальне замовлення: 7
ES2AAHR3G ES2AAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AAHR3G ES2AAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AA R3G ES2AA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AA R3G ES2AA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AAHM2G ES2AAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
ES2AA M2G ES2AA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2A R5G ES2A R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AHM4G ES2AHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AHR5G ES2AHR5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
SK35B M4G SK35B M4G Taiwan Semiconductor Corporation SK32B%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK35BHM4G SK35BHM4G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
TS358CD C3G TS358_B15.pdf
TS358CD C3G
Виробник: Taiwan Semiconductor Corporation
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.309", 7.87mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 9972 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+39.68 грн
10+ 33.07 грн
50+ 30.86 грн
100+ 23.17 грн
250+ 21.51 грн
500+ 18.2 грн
1000+ 13.84 грн
2500+ 12.61 грн
5000+ 11.8 грн
Мінімальне замовлення: 8
TS5204CX50 RFG TS5204_M2003.pdf
TS5204CX50 RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+19.48 грн
6000+ 17.46 грн
15000+ 16.82 грн
Мінімальне замовлення: 3000
TS5204CX50 RFG TS5204_M2003.pdf
TS5204CX50 RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 31942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+50.36 грн
10+ 42.69 грн
25+ 40.09 грн
100+ 30.71 грн
250+ 28.53 грн
500+ 24.28 грн
1000+ 19.1 грн
Мінімальне замовлення: 7
TS5204CQ33 RFG TS5204_M2003.pdf
TS5204CQ33 RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
товар відсутній
TS5204CQ33 RFG TS5204_M2003.pdf
TS5204CQ33 RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.47 грн
10+ 48.05 грн
Мінімальне замовлення: 6
TS79L05CY RMG TS79L05CY_J2001.pdf
TS79L05CY RMG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TSM038N04LCP ROG
TSM038N04LCP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
товар відсутній
TSM038N04LCP ROG
TSM038N04LCP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+112.93 грн
10+ 88.98 грн
100+ 69.17 грн
Мінімальне замовлення: 3
BZD27C18PW BZD27C11PW SERIES_D2203.pdf
BZD27C18PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+6.51 грн
Мінімальне замовлення: 10000
BZD27C18PW BZD27C11PW SERIES_D2203.pdf
BZD27C18PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 28262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.34 грн
13+ 23.22 грн
100+ 11.73 грн
500+ 9.75 грн
1000+ 7.59 грн
2000+ 6.79 грн
5000+ 6.53 грн
Мінімальне замовлення: 9
TSM4NB60CH C5G TSM4NB60_L1901.pdf
TSM4NB60CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A TO251
на замовлення 15180 шт:
термін постачання 21-31 дні (днів)
TS2940CZ33 C0G pdf.php?pn=TS2940CZ33
TS2940CZ33 C0G
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
товар відсутній
TS2940CZ50 C0G pdf.php?pn=TS2940CZ50
TS2940CZ50 C0G
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 3681 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+148.79 грн
10+ 128.59 грн
25+ 121.36 грн
100+ 97.02 грн
250+ 91.11 грн
500+ 79.72 грн
1000+ 64.97 грн
2500+ 60.49 грн
Мінімальне замовлення: 3
SMB10J30AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J30AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
850+49.15 грн
1700+ 38.55 грн
Мінімальне замовлення: 850
SMB10J30AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J30AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+90.8 грн
10+ 71.79 грн
100+ 55.84 грн
Мінімальне замовлення: 4
HS2DA R3G HS2AA%20SERIES_H14.pdf
HS2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
HS2DA R3G HS2AA%20SERIES_H14.pdf
HS2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 5381 шт:
термін постачання 21-31 дні (днів)
RS2DAL M3G
RS2DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
RS2DAL M3G
RS2DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
S2DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 200V, STANDARD RECOVERY RECT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
S2DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 200V, STANDARD RECOVERY RECT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
HS2DAL M3G
HS2DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
HS2DAL M3G
HS2DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
RS2DA R3G RS2AA%20SERIES_G14.pdf
RS2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
RS2DA R3G RS2AA%20SERIES_G14.pdf
RS2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
S2DA M2G S2AA%20SERIES_J15.pdf
S2DA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
RS2DA M2G RS2AA%20SERIES_G14.pdf
RS2DA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
S2DA R3G S2AA%20SERIES_J15.pdf
S2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
S2DA R3G S2AA%20SERIES_J15.pdf
S2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
RS2DAHM2G RS2AA%20SERIES_G14.pdf
RS2DAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
RS2DAHR3G RS2AA%20SERIES_G14.pdf
RS2DAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
RS2DAHR3G RS2AA%20SERIES_G14.pdf
RS2DAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
товар відсутній
SFS1603G MNG SFS1601G%20SERIES_N15.pdf
SFS1603G MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
SFS1603GHMNG SFS1601G%20SERIES_N15.pdf
SFS1603GHMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
TSF20U100C C0G TSF20U100C_E2105.pdf
TSF20U100C C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)
RS1GL RQG RS1AL%20SERIES_N2103.pdf
RS1GL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
ES1GL RFG ES1AL%20SERIES_L2103.pdf
ES1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS1GL RHG RS1AL%20SERIES_N2103.pdf
RS1GL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
S1GL RHG S1xL_Rev.O15.pdf
S1GL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
RS1GL RTG RS1AL%20SERIES_N2103.pdf
RS1GL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
товар відсутній
S1GL RTG S1AL%20SERIES_O15.pdf
S1GL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
HS1GL RFG HS1AL%20SERIES_C2103.pdf
HS1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS1GL RFG RS1AL%20SERIES_N2103.pdf
RS1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
S1GL RFG S1AL%20SERIES_Q2108.pdf
S1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS1GL RUG HS1AL%20SERIES_C2103.pdf
HS1GL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
S1GL RVG S1AL%20SERIES_O15.pdf
S1GL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
RS1MFS MXG RS1xFS_DS.pdf
RS1MFS MXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
товар відсутній
TSM038N03PQ33 RGG TSM038N03PQ33_B1610.pdf
TSM038N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+18.28 грн
10000+ 16.3 грн
Мінімальне замовлення: 5000
TSM038N03PQ33 RGG TSM038N03PQ33_B1610.pdf
TSM038N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 18887 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+50.36 грн
10+ 42.32 грн
100+ 29.33 грн
500+ 23 грн
1000+ 19.58 грн
2000+ 17.44 грн
Мінімальне замовлення: 7
ES2AAHR3G ES2AA%20SERIES_M2102.pdf
ES2AAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AAHR3G ES2AA%20SERIES_M2102.pdf
ES2AAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AA R3G ES2AA%20SERIES_M2102.pdf
ES2AA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AA R3G ES2AA%20SERIES_M2102.pdf
ES2AA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AAHM2G ES2AA%20SERIES_M2102.pdf
ES2AAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
ES2AA M2G ES2AA%20SERIES_M2102.pdf
ES2AA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2A R5G ES2A%20SERIES_L2102.pdf
ES2A R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AHM4G ES2A%20SERIES_L2102.pdf
ES2AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
ES2AHR5G ES2A%20SERIES_L2102.pdf
ES2AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
SK35B M4G SK32B%20SERIES_O2102.pdf
SK35B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK35BHM4G SK32BH%20SERIES_B2212.pdf
SK35BHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
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