Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23688) > Сторінка 173 з 395
Фото | Назва | Виробник | Інформація |
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ES1DL MTG | Taiwan Semiconductor Corporation |
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ES1DL RTG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES1DLHMQG | Taiwan Semiconductor Corporation |
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ES1DLHMTG | Taiwan Semiconductor Corporation |
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ES1DLHRTG | Taiwan Semiconductor Corporation |
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ES1DL RFG | Taiwan Semiconductor Corporation |
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ES1DLHRFG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES1DLHRVG | Taiwan Semiconductor Corporation |
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5.0SMDJ54A M6G | Taiwan Semiconductor Corporation |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ54A M6G | Taiwan Semiconductor Corporation |
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на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ20A M6G | Taiwan Semiconductor Corporation |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ20A M6G | Taiwan Semiconductor Corporation |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ24A M6G | Taiwan Semiconductor Corporation |
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5.0SMDJ24A M6G | Taiwan Semiconductor Corporation |
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на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ28A M6G | Taiwan Semiconductor Corporation |
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5.0SMDJ28A M6G | Taiwan Semiconductor Corporation |
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на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ36A M6G | Taiwan Semiconductor Corporation |
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5.0SMDJ36A M6G | Taiwan Semiconductor Corporation |
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на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ43A M6G | Taiwan Semiconductor Corporation |
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5.0SMDJ43A M6G | Taiwan Semiconductor Corporation |
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на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ26A M6G | Taiwan Semiconductor Corporation |
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5.0SMDJ26A M6G | Taiwan Semiconductor Corporation |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ES2J R5G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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ES2J R5G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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ES2JA R3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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ES2JA R3G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 6520 шт: термін постачання 21-31 дні (днів) |
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ES2JAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 600V, SUPER FAST RECOV |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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ES2JAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 600V, SUPER FAST RECOV |
на замовлення 4020 шт: термін постачання 21-31 дні (днів) |
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ES2JFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 600V, SUPER FAST RECOV |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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ES2JFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 2A, 600V, SUPER FAST RECOV |
на замовлення 6310 шт: термін постачання 21-31 дні (днів) |
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ES2JA M2G | Taiwan Semiconductor Corporation |
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ES2JAHM2G | Taiwan Semiconductor Corporation |
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ES2JAHR3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
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ES2J M4G | Taiwan Semiconductor Corporation |
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ES2JHM4G | Taiwan Semiconductor Corporation |
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ES2JHR5G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
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TS78L05CT A3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-92 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 100mA (Typ) Protection Features: Over Current, Over Temperature |
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TS78L05CT A3G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-92 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 100mA (Typ) Protection Features: Over Current, Over Temperature |
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TS78L05CT B0G | Taiwan Semiconductor Corporation |
![]() Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-92 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 100mA (Typ) Protection Features: Over Current, Over Temperature |
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S8JCH | Taiwan Semiconductor Corporation |
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на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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S8JCH | Taiwan Semiconductor Corporation |
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на замовлення 11921 шт: термін постачання 21-31 дні (днів) |
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S8JC V7G | Taiwan Semiconductor Corporation |
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на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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S8JC V7G | Taiwan Semiconductor Corporation |
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на замовлення 1157 шт: термін постачання 21-31 дні (днів) |
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S8JC R7G | Taiwan Semiconductor Corporation |
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на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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S8JC M6G | Taiwan Semiconductor Corporation |
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S8JC V6G | Taiwan Semiconductor Corporation |
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S8JCHM6G | Taiwan Semiconductor Corporation |
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TSM60NB099CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V |
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TSM60NB099PW C1G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V |
на замовлення 97 шт: термін постачання 21-31 дні (днів) |
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SMBJ64A M4G | Taiwan Semiconductor Corporation |
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SMBJ64A R5G | Taiwan Semiconductor Corporation |
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SMBJ64A R5G | Taiwan Semiconductor Corporation |
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SMBJ64AHM4G | Taiwan Semiconductor Corporation |
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SMBJ64AHR5G | Taiwan Semiconductor Corporation |
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MBRF1090CTHC0G | Taiwan Semiconductor Corporation |
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MBRF1090HC0G | Taiwan Semiconductor Corporation |
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SRF1090 C0G | Taiwan Semiconductor Corporation |
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SRF1090HC0G | Taiwan Semiconductor Corporation |
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SR1204 A0G | Taiwan Semiconductor Corporation |
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TSM110NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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ES1DL MTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Description: DIODE GEN PURP 200V 1A SUB SMA
товар відсутній
ES1DL RTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
ES1DLHMQG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Description: DIODE GEN PURP 200V 1A SUB SMA
товар відсутній
ES1DLHMTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Description: DIODE GEN PURP 200V 1A SUB SMA
товар відсутній
ES1DLHRTG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Description: DIODE GEN PURP 200V 1A SUB SMA
товар відсутній
ES1DL RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Description: DIODE GEN PURP 200V 1A SUB SMA
товар відсутній
ES1DLHRFG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
ES1DLHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Description: DIODE GEN PURP 200V 1A SUB SMA
товар відсутній
5.0SMDJ54A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ54A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)5.0SMDJ20A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
Description: TVS DIODE 20VWM 32.4VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ20A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
Description: TVS DIODE 20VWM 32.4VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ24A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Description: TVS DIODE 24V 38.9V DO214AB
товар відсутній
5.0SMDJ24A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Description: TVS DIODE 24V 38.9V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ28A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
товар відсутній
5.0SMDJ28A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ36A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Description: TVS DIODE 36V 58.1V DO214AB
товар відсутній
5.0SMDJ36A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Description: TVS DIODE 36V 58.1V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ43A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Description: TVS DIODE 43V 69.4V DO214AB
товар відсутній
5.0SMDJ43A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Description: TVS DIODE 43V 69.4V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)5.0SMDJ26A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Description: TVS DIODE 26V 42.1V DO214AB
товар відсутній
5.0SMDJ26A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Description: TVS DIODE 26V 42.1V DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)ES2J R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
ES2J R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
ES2JA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 20.87 грн |
3600+ | 18.45 грн |
5400+ | 17.61 грн |
ES2JA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.31 грн |
10+ | 47.22 грн |
100+ | 30.98 грн |
500+ | 22.51 грн |
ES2JAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Description: 35NS, 2A, 600V, SUPER FAST RECOV
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)ES2JAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Description: 35NS, 2A, 600V, SUPER FAST RECOV
на замовлення 4020 шт:
термін постачання 21-31 дні (днів)ES2JFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Description: 35NS, 2A, 600V, SUPER FAST RECOV
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)ES2JFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Description: 35NS, 2A, 600V, SUPER FAST RECOV
на замовлення 6310 шт:
термін постачання 21-31 дні (днів)ES2JA M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
ES2JAHM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Description: DIODE GEN PURP 600V 2A DO214AC
товар відсутній
ES2JAHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
ES2J M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
товар відсутній
ES2JHM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
товар відсутній
ES2JHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
TS78L05CT A3G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TS78L05CT A3G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TS78L05CT B0G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
S8JCH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 16.91 грн |
6000+ | 15.23 грн |
S8JCH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
на замовлення 11921 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.94 грн |
10+ | 43.34 грн |
100+ | 33.22 грн |
500+ | 24.65 грн |
1000+ | 19.72 грн |
S8JC V7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
850+ | 42.55 грн |
S8JC V7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
на замовлення 1157 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.75 грн |
10+ | 63.62 грн |
100+ | 49.6 грн |
S8JC R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
на замовлення 86 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 49.42 грн |
10+ | 40.78 грн |
S8JC M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
товар відсутній
S8JC V6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
товар відсутній
S8JCHM6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
товар відсутній
TSM60NB099CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
товар відсутній
TSM60NB099PW C1G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 587.71 грн |
25+ | 452 грн |
SMBJ64A M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
товар відсутній
SMBJ64A R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
товар відсутній
SMBJ64A R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
товар відсутній
SMBJ64AHM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
товар відсутній
SMBJ64AHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Description: TVS DIODE 64V 103V DO214AA
товар відсутній
MBRF1090CTHC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
товар відсутній
MBRF1090HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Description: DIODE SCHOTTKY 90V 10A ITO220AC
товар відсутній
SRF1090 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
товар відсутній
SRF1090HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Description: DIODE ARRAY SCHOTT 90V ITO220AB
товар відсутній
SR1204 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Description: DIODE SCHOTTKY 40V 12A DO201AD
товар відсутній
TSM110NB04DCR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 34.56 грн |
5000+ | 31.69 грн |
12500+ | 30.23 грн |