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ES1FLHR3G ES1FLHR3G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FL RHG ES1FL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FLHRHG ES1FLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
ES1FL M2G ES1FL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FL MHG ES1FL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FLHM2G ES1FLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
ES1FLHMHG ES1FLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
ES1FL MQG ES1FL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FL MTG ES1FL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FL RTG ES1FL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FLHMQG ES1FLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FLHMTG ES1FLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FLHRTG ES1FLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
1N5255B A0G 1N5255B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 28V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ14CHR3G SMAJ14CHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SMAJ14HR3G SMAJ14HR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 3449 шт:
термін постачання 21-31 дні (днів)
9+35.1 грн
11+ 27.55 грн
100+ 18.74 грн
500+ 13.19 грн
Мінімальне замовлення: 9
P6SMB39A M4G P6SMB39A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товар відсутній
P6SMB39AHM4G P6SMB39AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товар відсутній
P6SMB39AHR5G P6SMB39AHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1KSMB39A M4G 1KSMB39A M4G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1KSMB39AHM4G 1KSMB39AHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
1KSMB39A R5G 1KSMB39A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
1KSMB39AHR5G 1KSMB39AHR5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
S2JA R3G S2JA R3G Taiwan Semiconductor Corporation S2AA%20SERIES_J15.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
P4KE16CA R1G P4KE16CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CAHR1G P4KE16CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CA A0G P4KE16CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
P4KE16CAHA0G P4KE16CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CA B0G P4KE16CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CAHB0G P4KE16CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
MTZJ12SA R0G MTZJ12SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 11.42V 500MW DO34
товар відсутній
RSFJL RVG RSFJL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RVG RSFJL RVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
RSFJL R3G RSFJL R3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL M2G RSFJL M2G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RQG RSFJL RQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RTG RSFJL RTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHM2G RSFJLHM2G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRQG RSFJLHRQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRTG RSFJLHRTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RUG RSFJL RUG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHR3G RSFJLHR3G Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RHG RSFJL RHG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRHG RSFJLHRHG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL MHG RSFJL MHG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHMHG RSFJLHMHG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL MQG RSFJL MQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL MTG RSFJL MTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHMQG RSFJLHMQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHMTG RSFJLHMTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RFG RSFJL RFG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRFG RSFJLHRFG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRUG RSFJLHRUG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRVG RSFJLHRVG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
TS25P04G C2G TS25P04G C2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_P2104.pdf Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
TS25P04G D2G TS25P04G D2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_P2104.pdf Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
TS25P04GHC2G TS25P04GHC2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_P2104.pdf Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
TS25P04GHD2G TS25P04GHD2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_P2104.pdf Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
ES1FLHR3G ES1AL%20SERIES_K15.pdf
ES1FLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FL RHG ES1AL%20SERIES_L2103.pdf
ES1FL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FLHRHG ES1AL%20SERIES_L2103.pdf
ES1FLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
ES1FL M2G ES1AL%20SERIES_L2103.pdf
ES1FL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FL MHG ES1AL%20SERIES_L2103.pdf
ES1FL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FLHM2G ES1AL%20SERIES_L2103.pdf
ES1FLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
ES1FLHMHG ES1AL%20SERIES_L2103.pdf
ES1FLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
ES1FL MQG ES1AL%20SERIES_L2103.pdf
ES1FL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FL MTG ES1AL%20SERIES_L2103.pdf
ES1FL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
ES1FL RTG ES1AL%20SERIES_K15.pdf
ES1FL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FLHMQG ES1AL%20SERIES_K15.pdf
ES1FLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FLHMTG ES1AL%20SERIES_K15.pdf
ES1FLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
ES1FLHRTG ES1AL%20SERIES_K15.pdf
ES1FLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
1N5255B A0G 1N5221B%20SERIES_G1804.pdf
1N5255B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 28V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
SMAJ14CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ14CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ14CHR3G SMAJ%20SERIES_U2102.pdf
SMAJ14CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SMAJ14HR3G SMAJ%20SERIES_U2102.pdf
SMAJ14HR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 3449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+35.1 грн
11+ 27.55 грн
100+ 18.74 грн
500+ 13.19 грн
Мінімальне замовлення: 9
P6SMB39A M4G P6SMB%20SERIES_P2102.pdf
P6SMB39A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товар відсутній
P6SMB39AHM4G P6SMB%20SERIES_P2102.pdf
P6SMB39AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товар відсутній
P6SMB39AHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB39AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1KSMB39A M4G 1KSMB SERIES_A2102.pdf
1KSMB39A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1KSMB39AHM4G 1KSMB SERIES_H1902.pdf
1KSMB39AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
1KSMB39A R5G 1KSMB SERIES_H1902.pdf
1KSMB39A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
1KSMB39AHR5G 1KSMB SERIES_H1902.pdf
1KSMB39AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
S2JA R3G S2AA%20SERIES_J15.pdf
S2JA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
P4KE16CA R1G P4KE%20SERIES_M1602.pdf
P4KE16CA R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CAHR1G P4KE%20SERIES_M1602.pdf
P4KE16CAHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CA A0G P4KE%20SERIES_N2104.pdf
P4KE16CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
P4KE16CAHA0G P4KE%20SERIES_M1602.pdf
P4KE16CAHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CA B0G P4KE%20SERIES_M1602.pdf
P4KE16CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
P4KE16CAHB0G P4KE%20SERIES_M1602.pdf
P4KE16CAHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
товар відсутній
MTZJ12SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ12SA R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11.42V 500MW DO34
товар відсутній
RSFJL RVG RSFAL%20SERIES_L15.pdf
RSFJL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RVG RSFAL%20SERIES_L15.pdf
RSFJL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
RSFJL R3G RSFAL%20SERIES_L15.pdf
RSFJL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL M2G RSFAL%20SERIES_L15.pdf
RSFJL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RQG RSFAL%20SERIES_L15.pdf
RSFJL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RTG RSFAL%20SERIES_L15.pdf
RSFJL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHM2G RSFAL%20SERIES_L15.pdf
RSFJLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRQG RSFAL%20SERIES_L15.pdf
RSFJLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRTG RSFAL%20SERIES_L15.pdf
RSFJLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RUG RSFAL%20SERIES_L15.pdf
RSFJL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHR3G RSFAL%20SERIES_L15.pdf
RSFJLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RHG RSFAL%20SERIES_L15.pdf
RSFJL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRHG RSFAL%20SERIES_L15.pdf
RSFJLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL MHG RSFAL%20SERIES_L15.pdf
RSFJL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHMHG RSFAL%20SERIES_L15.pdf
RSFJLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL MQG RSFAL%20SERIES_L15.pdf
RSFJL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL MTG RSFAL%20SERIES_L15.pdf
RSFJL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHMQG RSFAL%20SERIES_L15.pdf
RSFJLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHMTG RSFAL%20SERIES_L15.pdf
RSFJLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJL RFG RSFAL%20SERIES_L15.pdf
RSFJL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRFG RSFAL%20SERIES_L15.pdf
RSFJLHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRUG RSFAL%20SERIES_L15.pdf
RSFJLHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
RSFJLHRVG RSFAL%20SERIES_L15.pdf
RSFJLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
товар відсутній
TS25P04G C2G TS25P01G%20SERIES_P2104.pdf
TS25P04G C2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
TS25P04G D2G TS25P01G%20SERIES_P2104.pdf
TS25P04G D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
TS25P04GHC2G TS25P01G%20SERIES_P2104.pdf
TS25P04GHC2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
TS25P04GHD2G TS25P01G%20SERIES_P2104.pdf
TS25P04GHD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
товар відсутній
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