Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23441) > Сторінка 151 з 391
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
P6KE39A A0G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 33.3VWM 53.9VC DO204ACPackaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
товар відсутній |
|||||||||||||||
|
|
P6KE39AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
P6KE39A B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
товар відсутній |
|||||||||||||||
|
|
P6KE39AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
 |
TSM60N380CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TSM600P03CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
TSM600P03CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
на замовлення 1355 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
S2A M4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA |
товар відсутній |
|||||||||||||||
.jpg "TS4148C RZG") |
TS4148C RZG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 75V 100MA 0603 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 0603 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
TS4148C RZG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 75V 100MA 0603 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 0603 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 92223 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
1PGSMA4740HM2G | Taiwan Semiconductor Corporation |
Description: DIODE, ZENER, 10V |
товар відсутній |
|||||||||||||||
 |
RS3M R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
|||||||||||||||
|
|
RS3MHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
 |
RS3M V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO214AB |
товар відсутній |
|||||||||||||||
|
|
RS3M V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
|||||||||||||||
|
|
RS3M M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
|||||||||||||||
|
|
RS3MHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
5.0SMDJ64A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64VWM 103VC DO214AB |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
|
|
5.0SMDJ64A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64VWM 103VC DO214AB |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
|
|
SMA6J16A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 16VWM 25.2VC DO214AC |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
|
|
SMA6J16A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 16VWM 25.2VC DO214AC |
на замовлення 8425 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
 |
BZD27C180PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 180V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 450 Ohms Supplier Device Package: SOD-123W Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 130 V |
товар відсутній |
|||||||||||||||
|
|
BZD27C180PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 180V 1W SOD123W Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 450 Ohms Supplier Device Package: SOD-123W Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 130 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
BZD27C180PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 180V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 450 Ohms Supplier Device Package: SOD-123W Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 130 V Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
BZD27C180PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 180V 1W SOD123W Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 450 Ohms Supplier Device Package: SOD-123W Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 130 V Qualification: AEC-Q101 |
на замовлення 585 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TS15P07G D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
 |
MTZJ24SB R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 23.19V 500MW DO34 |
товар відсутній |
|||||||||||||||
|
|
MTZJ24SC R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 23.72V 500MW DO34 |
товар відсутній |
|||||||||||||||
|
|
MTZJ24SD R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24.24V 500MW DO34 |
товар відсутній |
|||||||||||||||
 |
1N5224B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 2.8V 500MW DO35 |
товар відсутній |
|||||||||||||||
|
|
HS3K R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB |
товар відсутній |
|||||||||||||||
|
|
HS3K R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB |
товар відсутній |
|||||||||||||||
 |
TS5205CX5 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LIN POS ADJ 150MA SOT25 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Max): 8V Voltage - Output (Min/Fixed): 1.24V Control Features: Current Limit, Enable Part Status: Active PSRR: 75dB (100Hz) Voltage Dropout (Max): 0.275V @ 150mA Protection Features: Over Temperature Current - Supply (Max): 1.9 mA |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
TS5205CX5 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LIN POS ADJ 150MA SOT25 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Max): 8V Voltage - Output (Min/Fixed): 1.24V Control Features: Current Limit, Enable Part Status: Active PSRR: 75dB (100Hz) Voltage Dropout (Max): 0.275V @ 150mA Protection Features: Over Temperature Current - Supply (Max): 1.9 mA |
на замовлення 23917 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SMAJ13HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 13VWM 23.8VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 16.8A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 23.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
SMAJ13HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 13VWM 23.8VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 16.8A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 23.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
 |
TSA1036CX RFG | Taiwan Semiconductor Corporation |
Description: TRANSISTOR, PNP, -30V, -0.6A, 82 |
товар відсутній |
|||||||||||||||
 |
MUR360SBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
MUR360SBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
MUR360SB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
|||||||||||||||
|
|
MUR360SB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
MUR360S R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
|||||||||||||||
|
|
MUR360S R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
|||||||||||||||
|
|
MUR360S V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB |
товар відсутній |
|||||||||||||||
|
|
MUR360SB M4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA |
товар відсутній |
|||||||||||||||
|
|
MUR360SHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
|
MUR360SBHM4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA |
товар відсутній |
|||||||||||||||
|
|
MUR360S M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
|||||||||||||||
|
|
MUR360SHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
 |
TSF20L150C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 150V ITO220AB |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
 |
BZD27C33PHRHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
товар відсутній |
|||||||||||||||
|
|
BZD27C33PHM2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
товар відсутній |
|||||||||||||||
|
|
BZD27C33PHMHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
товар відсутній |
|||||||||||||||
|
|
BZD27C33PHMQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
товар відсутній |
|||||||||||||||
|
|
BZD27C33PHRTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
товар відсутній |
|||||||||||||||
|
|
BZD27C33PHRFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
товар відсутній |
|||||||||||||||
|
|
BZX79C33 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 500MW DO35 |
товар відсутній |
|||||||||||||||
|
|
TSD1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товар відсутній |
|||||||||||||||
|
|
TSD1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TSD10H100CW MNG | Taiwan Semiconductor Corporation |
Description: DIODE, SCHOTTKY, TRENCH, 10A, 10 |
товар відсутній |
| P6KE39A A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| P6KE39AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| P6KE39A B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| P6KE39AHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| TSM60N380CZ C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.29 грн |
| 10+ | 130.5 грн |
| 100+ | 103.84 грн |
| 500+ | 82.46 грн |
| 1000+ | 69.96 грн |
| 2000+ | 66.47 грн |
| TSM600P03CS RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
товар відсутній
| TSM600P03CS RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.05 грн |
| 12+ | 26.31 грн |
| 100+ | 18.29 грн |
| 500+ | 13.4 грн |
| 1000+ | 10.89 грн |
| S2A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Description: DIODE GEN PURP 50V 2A DO214AA
товар відсутній
| TS4148C RZG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.44 грн |
| 10000+ | 2.82 грн |
| 25000+ | 2.65 грн |
| 50000+ | 2.33 грн |
| TS4148C RZG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 100MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 92223 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.89 грн |
| 17+ | 17.78 грн |
| 100+ | 9.45 грн |
| 500+ | 5.83 грн |
| 1000+ | 3.97 грн |
| 2000+ | 3.58 грн |
| 1PGSMA4740HM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 10V
Description: DIODE, ZENER, 10V
товар відсутній
| RS3M R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| RS3MHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| RS3M V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Description: DIODE GEN PURP 3A DO214AB
товар відсутній
| RS3M V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| RS3M M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| RS3MHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 5.0SMDJ64A M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| 5.0SMDJ64A M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| SMA6J16A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 25.2VC DO214AC
Description: TVS DIODE 16VWM 25.2VC DO214AC
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)| SMA6J16A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 25.2VC DO214AC
Description: TVS DIODE 16VWM 25.2VC DO214AC
на замовлення 8425 шт:
термін постачання 21-31 дні (днів)| BZD27C180PW |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
товар відсутній
| BZD27C180PW |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.57 грн |
| 13+ | 22.93 грн |
| BZD27C180PWH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
товар відсутній
| BZD27C180PWH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
Description: DIODE ZENER 180V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Qualification: AEC-Q101
на замовлення 585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.34 грн |
| 13+ | 23.44 грн |
| 100+ | 11.84 грн |
| 500+ | 9.85 грн |
| TS15P07G D2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 15A TS-6P
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| MTZJ24SB R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 23.19V 500MW DO34
Description: DIODE ZENER 23.19V 500MW DO34
товар відсутній
| MTZJ24SC R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 23.72V 500MW DO34
Description: DIODE ZENER 23.72V 500MW DO34
товар відсутній
| MTZJ24SD R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24.24V 500MW DO34
Description: DIODE ZENER 24.24V 500MW DO34
товар відсутній
| 1N5224B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.8V 500MW DO35
Description: DIODE ZENER 2.8V 500MW DO35
товар відсутній
| HS3K R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Description: DIODE GEN PURP 800V 3A DO214AB
товар відсутній
| HS3K R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Description: DIODE GEN PURP 800V 3A DO214AB
товар відсутній
| TS5205CX5 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 150MA SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 8V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
Description: IC REG LIN POS ADJ 150MA SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 8V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.1 грн |
| 6000+ | 15.33 грн |
| 15000+ | 14.76 грн |
| TS5205CX5 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 150MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 8V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
Description: IC REG LIN POS ADJ 150MA SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 8V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.275V @ 150mA
Protection Features: Over Temperature
Current - Supply (Max): 1.9 mA
на замовлення 23917 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.26 грн |
| 10+ | 37.47 грн |
| 25+ | 35.21 грн |
| 100+ | 26.96 грн |
| 250+ | 25.04 грн |
| 500+ | 21.31 грн |
| 1000+ | 16.77 грн |
| SMAJ13HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 23.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 13VWM 23.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| SMAJ13HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13VWM 23.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 13VWM 23.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| TSA1036CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANSISTOR, PNP, -30V, -0.6A, 82
Description: TRANSISTOR, PNP, -30V, -0.6A, 82
товар відсутній
| MUR360SBHR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
| MUR360SBHR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
| MUR360SB R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| MUR360SB R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.54 грн |
| 10+ | 59.37 грн |
| MUR360S R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| MUR360S R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| MUR360S V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Description: DIODE GEN PURP 600V 3A DO214AB
товар відсутній
| MUR360SB M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
| MUR360SHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
| MUR360SBHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
| MUR360S M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| MUR360SHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
| TSF20L150C C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Description: DIODE ARRAY SCHOTT 150V ITO220AB
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| BZD27C33PHRHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
товар відсутній
| BZD27C33PHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
товар відсутній
| BZD27C33PHMHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
товар відсутній
| BZD27C33PHMQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
товар відсутній
| BZD27C33PHRTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
товар відсутній
| BZD27C33PHRFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
товар відсутній
| BZX79C33 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
товар відсутній
| TSD1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
| TSD1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.18 грн |
| 18+ | 17.27 грн |
| 100+ | 8.75 грн |
| 500+ | 6.7 грн |
| TSD10H100CW MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 10A, 10
Description: DIODE, SCHOTTKY, TRENCH, 10A, 10
товар відсутній