Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23441) > Сторінка 150 з 391
| Фото | Назва | Виробник | Інформація |
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BZD27C43PHMHG | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 43V 1W SUB SMATolerance: ±6.97% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
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BZD27C43PHMQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Tolerance: ±6.97% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
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BZD27C43PHMTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Tolerance: ±6.97% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
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BZD27C43PHRTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Tolerance: ±6.97% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
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BZD27C43PHRFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Tolerance: ±6.97% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
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BZT52C6V8S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 200MW SOD323F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52C6V8S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 200MW SOD323F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V |
на замовлення 5673 шт: термін постачання 21-31 дні (днів) |
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BZT52C6V8-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 350MW SOD123 |
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BZT52C6V8K RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 200MW SOD523F |
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BZT52C6V8 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 500MW SOD123F |
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RYG.jpg "BZY55B5V6 RYG") |
BZY55B5V6 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 500MW 0805 |
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SRF1030 C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 30V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
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SRF1030HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 30V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
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BZY55C11 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 500MW 0805 |
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BZT55C11 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 500MW MINI MELF Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: Mini MELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V |
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SMDJ15A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB |
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SMDJ15AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB |
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SMDJ15A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB |
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SMDJ15A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB |
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SMDJ15A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB |
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SMDJ15AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15V 24.4V DO214AB |
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P6SMB220A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185V 328V DO214AA |
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P6SMB220AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185V 328V DO214AA |
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P6SMB220A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185VWM 328VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 185V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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P6SMB220AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 185V 328V DO214AA |
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TSM60NB190CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V |
на замовлення 3858 шт: термін постачання 21-31 дні (днів) |
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TSM60NB190CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 18A ITO220AB |
на замовлення 3904 шт: термін постачання 21-31 дні (днів) |
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TSM60NB190CM2 RNG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 18A TO263 |
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TSM60NB190CM2 RNG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 18A TO263 |
на замовлення 525 шт: термін постачання 21-31 дні (днів) |
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TSM500P02DCQ RFG | Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 20V 4.7A 6TDFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 620mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-TDFN (2x2) Part Status: Active |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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TSM500P02DCQ RFG | Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 20V 4.7A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 620mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-TDFN (2x2) Part Status: Active |
на замовлення 80721 шт: термін постачання 21-31 дні (днів) |
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TSM5NC50CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 500V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V |
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TSM5NC50CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 500V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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TSM5NC50CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 500V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V |
на замовлення 671 шт: термін постачання 21-31 дні (днів) |
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TSM500N03CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 12.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
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TSM500N03CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 12.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
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SMF43A RVG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMF43A RVG | Taiwan Semiconductor Corporation |
Description: DIODE, TVS, UNIDIRECTIONAL |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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SA30CA R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 64.3VC DO204AC |
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S4J R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO214AB |
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S4J R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO214AB |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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SMAJ9.0CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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SMAJ9.0CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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SMAJ9.0CA M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9V 15.4V DO214AC |
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| 1PGSMC5354HR7G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 17V 5W DO214AB |
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| 1PGSMC5354 R7G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 17V 5W DO214AB |
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TS19450CS RLG | Taiwan Semiconductor Corporation |
Description: IC LED DRVR OFFL PWM 8SOP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TS19450CS RLG | Taiwan Semiconductor Corporation |
Description: IC LED DRVR OFFL PWM 8SOP |
на замовлення 6750 шт: термін постачання 21-31 дні (днів) |
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TS19603CS RLG | Taiwan Semiconductor Corporation |
Description: IC LED DRVR LINEAR 8SOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TS19603CS RLG | Taiwan Semiconductor Corporation |
Description: IC LED DRVR LINEAR 8SOP |
на замовлення 4778 шт: термін постачання 21-31 дні (днів) |
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P4KE130CA R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 111V 179V DO204AL |
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P4KE130CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 111V 179V DO204AL |
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P6KE130CA R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 111VWM 179VC DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.5A Voltage - Reverse Standoff (Typ): 111V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 124V Voltage - Clamping (Max) @ Ipp: 179V Power - Peak Pulse: 600W Power Line Protection: No |
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P6KE130CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 111VWM 179VC DO204AC |
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TSD30H120CW MNG | Taiwan Semiconductor Corporation |
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12 |
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TSD30H120CW MNG | Taiwan Semiconductor Corporation |
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12 |
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TST30H120CW C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 120V 15A TO220AB |
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TSF30H120C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 120V ITO220AB |
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P6KE39A R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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P6KE39AHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO204AC |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
| BZD27C43PHMQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
| BZD27C43PHMTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
| BZD27C43PHRTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
| BZD27C43PHRFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
| BZT52C6V8S RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
Description: DIODE ZENER 6.8V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.56 грн |
| BZT52C6V8S RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
Description: DIODE ZENER 6.8V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
на замовлення 5673 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.18 грн |
| 18+ | 17.12 грн |
| 100+ | 8.63 грн |
| 500+ | 6.61 грн |
| 1000+ | 4.9 грн |
| BZT52C6V8-G RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 350MW SOD123
Description: DIODE ZENER 6.8V 350MW SOD123
товар відсутній
| BZT52C6V8K RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD523F
Description: DIODE ZENER 6.8V 200MW SOD523F
товар відсутній
| BZT52C6V8 RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW SOD123F
Description: DIODE ZENER 6.8V 500MW SOD123F
товар відсутній
| BZY55B5V6 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW 0805
Description: DIODE ZENER 5.6V 500MW 0805
товар відсутній
| SRF1030 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
| SRF1030HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
товар відсутній
| BZY55C11 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 0805
Description: DIODE ZENER 11V 500MW 0805
товар відсутній
| BZT55C11 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
товар відсутній
| SMDJ15A R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Description: TVS DIODE 15V 24.4V DO214AB
товар відсутній
| SMDJ15AHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Description: TVS DIODE 15V 24.4V DO214AB
товар відсутній
| SMDJ15A V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Description: TVS DIODE 15V 24.4V DO214AB
товар відсутній
| SMDJ15A V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Description: TVS DIODE 15V 24.4V DO214AB
товар відсутній
| SMDJ15A M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Description: TVS DIODE 15V 24.4V DO214AB
товар відсутній
| SMDJ15AHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Description: TVS DIODE 15V 24.4V DO214AB
товар відсутній
| P6SMB220A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
Description: TVS DIODE 185V 328V DO214AA
товар відсутній
| P6SMB220AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
Description: TVS DIODE 185V 328V DO214AA
товар відсутній
| P6SMB220A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| P6SMB220AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
Description: TVS DIODE 185V 328V DO214AA
товар відсутній
| TSM60NB190CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.38 грн |
| 50+ | 217.7 грн |
| 100+ | 186.61 грн |
| 500+ | 155.66 грн |
| 1000+ | 133.28 грн |
| 2000+ | 125.5 грн |
| TSM60NB190CI C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220AB
Description: MOSFET N-CH 600V 18A ITO220AB
на замовлення 3904 шт:
термін постачання 21-31 дні (днів)| TSM60NB190CM2 RNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
Description: MOSFET N-CH 600V 18A TO263
товар відсутній
| TSM60NB190CM2 RNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
Description: MOSFET N-CH 600V 18A TO263
на замовлення 525 шт:
термін постачання 21-31 дні (днів)| TSM500P02DCQ RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.33 грн |
| 6000+ | 30.57 грн |
| 9000+ | 29.16 грн |
| TSM500P02DCQ RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
на замовлення 80721 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.88 грн |
| 10+ | 63.49 грн |
| 100+ | 49.38 грн |
| 500+ | 39.28 грн |
| 1000+ | 32 грн |
| TSM5NC50CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
товар відсутній
| TSM5NC50CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.38 грн |
| 10+ | 52.02 грн |
| TSM5NC50CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
на замовлення 671 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.43 грн |
| 10+ | 77.59 грн |
| 100+ | 60.38 грн |
| 500+ | 48.03 грн |
| TSM500N03CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товар відсутній
| TSM500N03CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET N-CH 30V 12.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товар відсутній
| SMF43A RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| SMF43A RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
Description: DIODE, TVS, UNIDIRECTIONAL
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)| SA30CA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Description: TVS DIODE 30VWM 64.3VC DO204AC
товар відсутній
| S4J R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Description: DIODE GEN PURP 600V 4A DO214AB
товар відсутній
| S4J R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Description: DIODE GEN PURP 600V 4A DO214AB
на замовлення 288 шт:
термін постачання 21-31 дні (днів)| SMAJ9.0CAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SMAJ9.0CAHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SMAJ9.0CA M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AC
Description: TVS DIODE 9V 15.4V DO214AC
товар відсутній
| 1PGSMC5354HR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
Description: DIODE ZENER 17V 5W DO214AB
товар відсутній
| 1PGSMC5354 R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
Description: DIODE ZENER 17V 5W DO214AB
товар відсутній
| TS19450CS RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
Description: IC LED DRVR OFFL PWM 8SOP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| TS19450CS RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
Description: IC LED DRVR OFFL PWM 8SOP
на замовлення 6750 шт:
термін постачання 21-31 дні (днів)| TS19603CS RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR LINEAR 8SOP
Description: IC LED DRVR LINEAR 8SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| TS19603CS RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRVR LINEAR 8SOP
Description: IC LED DRVR LINEAR 8SOP
на замовлення 4778 шт:
термін постачання 21-31 дні (днів)| P4KE130CA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
Description: TVS DIODE 111V 179V DO204AL
товар відсутній
| P4KE130CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
Description: TVS DIODE 111V 179V DO204AL
товар відсутній
| P6KE130CA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 111VWM 179VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
| P6KE130CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Description: TVS DIODE 111VWM 179VC DO204AC
товар відсутній
| TSD30H120CW MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
товар відсутній
| TSD30H120CW MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
товар відсутній
| TST30H120CW C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 15A TO220AB
Description: DIODE SCHOTTKY 120V 15A TO220AB
товар відсутній
| TSF30H120C C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Description: DIODE ARRAY SCHOTT 120V ITO220AB
товар відсутній
| P6KE39A R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| P6KE39AHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
Description: TVS DIODE 33.3VWM 53.9VC DO204AC
товар відсутній