Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23441) > Сторінка 146 з 391
Фото | Назва | Виробник | Інформація |
Доступність |
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1.5SMC82A V7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70.1V 113V DO214AB |
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1.5SMC82A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70.1V 113V DO214AB |
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1.5SMC82AHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70.1V 113V DO214AB |
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1.5SMC82AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70.1V 113V DO214AB |
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1.5SMC51A V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 43.6V 70.1V DO214AB |
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1.5SMC51A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 43.6VWM 70.1VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 22A Voltage - Reverse Standoff (Typ): 43.6V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 48.5V Voltage - Clamping (Max) @ Ipp: 70.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1.5SMC51A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 43.6V 70.1V DO214AB |
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1.5SMC51AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 43.6VWM 70.1VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 22A Voltage - Reverse Standoff (Typ): 43.6V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 48.5V Voltage - Clamping (Max) @ Ipp: 70.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5SMC51A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 43.6V 70.1V DO214AB |
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1.5SMC47CA V6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 40.2V 64.8V DO214AB |
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1.5SMC47CA M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
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1.5SMC47CAHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 24A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
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BZT52B15S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 200MW SOD323F Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V |
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BZT52B15S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 200MW SOD323F Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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SMAJ8.0CAHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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SMAJ8.0CAHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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SMAJ8.0CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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SMAJ8.0CA R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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SMAJ8.0CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA E2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA E3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA F2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA F3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CA R2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHE2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHE3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHF2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHF3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC DO214AC |
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PGSMAJ8.0CAHR2G | Taiwan Semiconductor Corporation | Description: DIODE TVS 400W SMA |
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PGSMAJ8.0CA F4G | Taiwan Semiconductor Corporation | Description: DIODE TVS 400W SMA |
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HT12G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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HT13G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A TS-1 |
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HT14G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 1A TS-1 |
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F1T2G R0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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F1T2GHR0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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F1T2G A1G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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F1T2GHA1G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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F1T2G A0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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F1T2GHA0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A TS-1 |
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S1GM RSG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A MICRO SMA |
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S1GM RSG | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A MICRO SMA |
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BZT55B43 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 43V 500MW MINI MELF |
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HS1KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS1KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS1KFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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HS1KFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 800V, HIGH EFFICIENT R |
на замовлення 5028 шт: термін постачання 21-31 дні (днів) |
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SF1602PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 16A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 85pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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SS16 M2G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 60V 1A DO214AC |
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TUAS8K M3G | Taiwan Semiconductor Corporation | Description: 8A, 800V, STANDARD RECOVERY RECT |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TUAS8K M3G | Taiwan Semiconductor Corporation | Description: 8A, 800V, STANDARD RECOVERY RECT |
на замовлення 1445 шт: термін постачання 21-31 дні (днів) |
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SMBJ36CAHM4G | Taiwan Semiconductor Corporation | Description: TVS DIODE 36VWM 58.1VC DO214AA |
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SMA6J17A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17VWM 26.7VC DO214AC |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SMA6J17A R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17VWM 26.7VC DO214AC |
на замовлення 3218 шт: термін постачання 21-31 дні (днів) |
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1SMA4738 M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 5 µA @ 6 V |
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BAT54SW RVG | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 30V 200MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
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MURF1620CT C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY GP 200V ITO-220AB |
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1.5SMC82A V7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1V 113V DO214AB
Description: TVS DIODE 70.1V 113V DO214AB
товар відсутній
1.5SMC82A R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1V 113V DO214AB
Description: TVS DIODE 70.1V 113V DO214AB
товар відсутній
1.5SMC82AHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1V 113V DO214AB
Description: TVS DIODE 70.1V 113V DO214AB
товар відсутній
1.5SMC82AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1V 113V DO214AB
Description: TVS DIODE 70.1V 113V DO214AB
товар відсутній
1.5SMC51A V6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6V 70.1V DO214AB
Description: TVS DIODE 43.6V 70.1V DO214AB
товар відсутній
1.5SMC51A V7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC51A R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6V 70.1V DO214AB
Description: TVS DIODE 43.6V 70.1V DO214AB
товар відсутній
1.5SMC51AHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5SMC51A M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6V 70.1V DO214AB
Description: TVS DIODE 43.6V 70.1V DO214AB
товар відсутній
1.5SMC47CA V6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO214AB
Description: TVS DIODE 40.2V 64.8V DO214AB
товар відсутній
1.5SMC47CA M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 40.2VWM 64.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1.5SMC47CAHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 40.2VWM 64.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
BZT52B15S RRG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
Description: DIODE ZENER 15V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
товар відсутній
BZT52B15S RRG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
Description: DIODE ZENER 15V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 10.5 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)SMAJ8.0CAHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
SMAJ8.0CAHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
на замовлення 40 шт:
термін постачання 21-31 дні (днів)SMAJ8.0CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
SMAJ8.0CA R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
SMAJ8.0CAHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHR3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA E2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA E3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA F2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA F3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CA R2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHE2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHE3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHF2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHF3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Description: TVS DIODE 8VWM 13.6VC DO214AC
товар відсутній
PGSMAJ8.0CAHR2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Description: DIODE TVS 400W SMA
товар відсутній
PGSMAJ8.0CA F4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Description: DIODE TVS 400W SMA
товар відсутній
HT12G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
HT13G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
HT14G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A TS-1
Description: DIODE GEN PURP 300V 1A TS-1
товар відсутній
F1T2G R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
F1T2GHR0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
F1T2G A1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
F1T2GHA1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
F1T2G A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
F1T2GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
S1GM RSG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Description: DIODE GEN PURP 400V 1A MICRO SMA
товар відсутній
S1GM RSG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Description: DIODE GEN PURP 400V 1A MICRO SMA
товар відсутній
BZT55B43 L1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Description: DIODE ZENER 43V 500MW MINI MELF
товар відсутній
HS1KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)HS1KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)HS1KFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)HS1KFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
на замовлення 5028 шт:
термін постачання 21-31 дні (днів)SF1602PT C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
SS16 M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO214AC
Description: DIODE SCHOTTKY 60V 1A DO214AC
товар відсутній
TUAS8K M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
Description: 8A, 800V, STANDARD RECOVERY RECT
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)TUAS8K M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
Description: 8A, 800V, STANDARD RECOVERY RECT
на замовлення 1445 шт:
термін постачання 21-31 дні (днів)SMBJ36CAHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AA
Description: TVS DIODE 36VWM 58.1VC DO214AA
товар відсутній
SMA6J17A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
Description: TVS DIODE 17VWM 26.7VC DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 29.38 грн |
SMA6J17A R3G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
Description: TVS DIODE 17VWM 26.7VC DO214AC
на замовлення 3218 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.57 грн |
10+ | 53.05 грн |
100+ | 40.68 грн |
500+ | 30.17 грн |
1SMA4738 M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
товар відсутній
BAT54SW RVG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товар відсутній
MURF1620CT C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V ITO-220AB
Description: DIODE ARRAY GP 200V ITO-220AB
товар відсутній