| Фото | Назва | Виробник | Інформація |
Доступність |
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| NRVB8H100MFSWFT1G | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 100V; 8A; DFN5; reel,tape Mounting: SMD Max. forward impulse current: 75A Case: DFN5 Kind of package: reel; tape Max. forward voltage: 0.9V Load current: 8A Semiconductor structure: single diode Max. load current: 16A Max. off-state voltage: 100V Application: automotive industry Type of diode: Schottky rectifying |
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| NRVB8H100MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 8A; DFN5; reel,tape Mounting: SMD Max. forward impulse current: 75A Case: DFN5 Kind of package: reel; tape Max. forward voltage: 0.9V Load current: 8A Semiconductor structure: single diode Max. load current: 16A Max. off-state voltage: 100V Application: automotive industry Type of diode: Schottky rectifying |
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| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape Mounting: SMD Max. forward impulse current: 300A Case: DFN5 Kind of package: reel; tape Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. load current: 60A Max. off-state voltage: 100V Application: automotive industry Type of diode: Schottky rectifying |
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| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 30A Max. load current: 60A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 300A Application: automotive industry |
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| NRVTS30100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 30A Max. load current: 60A Semiconductor structure: single diode Max. forward voltage: 0.76V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 350A Application: automotive industry |
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| NCP45560IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Kind of package: reel; tape On-state resistance: 6.8mΩ Output current: 17A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN12 Supply voltage: 3...5.5V DC |
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| NCP45560IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Kind of package: reel; tape On-state resistance: 6.8mΩ Output current: 17A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: low Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN12 Supply voltage: 3...5.5V DC |
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NDT2955 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 6700 шт: термін постачання 21-30 дні (днів) |
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Mounting: SMD Drain-source voltage: -60V Drain current: -2A On-state resistance: 0.185Ω Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Power dissipation: 2.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 154mΩ Mounting: SMD Gate charge: 14.3nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 805 шт: термін постачання 21-30 дні (днів) |
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TIP2955G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 15A; 90W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 15A Power dissipation: 90W Case: TO247-3 Current gain: 5...70 Mounting: THT Kind of package: tube Frequency: 2.5MHz |
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LM385BD-1.2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: tube Maximum output current: 20mA |
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LM385BD-1.2R2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA |
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LM385BD-2.5G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: tube Maximum output current: 20mA |
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LM385BD-2.5R2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA |
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KDT00030TR | ONSEMI |
Category: Phototransistors Description: Phototransistor; 630nm; 6V Type of photoelement: phototransistor Wavelength of peak sensitivity: 630nm Collector-emitter voltage: 6V Mounting: SMD |
на замовлення 2910 шт: термін постачання 21-30 дні (днів) |
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BC807-16LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 5864 шт: термін постачання 21-30 дні (днів) |
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BC807-16LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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FFSP3065A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; 40W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Max. load current: 75A Power dissipation: 40W Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Heatsink thickness: max. 1.4mm Max. forward impulse current: 150A Max. forward voltage: 2.4V Leakage current: 0.6mA |
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BC856ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2203 шт: термін постачання 21-30 дні (днів) |
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MC74HC4051ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: HC Supply voltage: 2...6V DC; 2...12V DC Family: HC Kind of package: tube Operating temperature: -55...125°C |
на замовлення 285 шт: термін постачання 21-30 дні (днів) |
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MC74HC4051ADR2G | ONSEMI |
 Category: Analog multiplexers and switchesDescription: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2÷6VDC; CMOS Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SO16 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C |
на замовлення 1977 шт: термін постачання 21-30 дні (днів) |
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MC74HC4051ADTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Supply voltage: 2...6V DC; 2...12V DC Family: HC Kind of package: tube Operating temperature: -55...125°C |
на замовлення 151 шт: термін постачання 21-30 дні (днів) |
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MC74HC4051ADTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; TSSOP16; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 80µA |
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MC74HC4051ADWG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Manufacturer series: HC Supply voltage: 2...6V DC; 2...12V DC Family: HC Kind of package: tube Operating temperature: -55...125°C |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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| MC74HC4051ADWR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Manufacturer series: HC Supply voltage: 2...6V DC; 2...12V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C |
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FNB41060 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAA-A26 Output current: 10A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V Frequency: 20kHz Power dissipation: 32W Collector-emitter voltage: 600V |
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2SC5707-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 8A; 1W; TO252 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 8A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Mounting: SMD Case: TO252 |
на замовлення 168 шт: термін постачання 21-30 дні (днів) |
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| NCP1602DCCSNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; TSOP6; 9÷30V; Topology: boost Type of integrated circuit: PMIC Topology: boost Case: TSOP6 Output current: -500...800mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 9...30V |
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| NCP1622DCCSNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; TSOP6; 9÷30V; Topology: boost Type of integrated circuit: PMIC Topology: boost Case: TSOP6 Output current: -500...800mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 9...30V |
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NCP1342AMDCCDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 9÷28V; SO8; flyback Type of integrated circuit: PMIC Topology: flyback Case: SO8 Output current: -500...800mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 9...28V |
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MMBZ9V1ALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 9.1V; 1.7A; 24W; double,common anode; SOT23; ±5% Mounting: SMD Max. off-state voltage: 6V Semiconductor structure: common anode; double Max. forward impulse current: 1.7A Breakdown voltage: 9.1V Leakage current: 0.3µA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 24W Case: SOT23 Tolerance: ±5% |
на замовлення 6775 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ9V1ALT3G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 9.1V; 1.7A; 40W; double,common anode; SOT23; ±5% Mounting: SMD Max. off-state voltage: 6V Semiconductor structure: common anode; double Max. forward impulse current: 1.7A Breakdown voltage: 9.1V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Case: SOT23 Tolerance: ±5% |
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1N5349BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 12V; bulk; CASE017AA; single diode; 2uA Type of diode: Zener Power dissipation: 5W Zener voltage: 12V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 4040 шт: термін постачання 21-30 дні (днів) |
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1N5349BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 12V; reel,tape; CASE017AA; single diode; 2uA Type of diode: Zener Power dissipation: 5W Zener voltage: 12V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 2956 шт: термін постачання 21-30 дні (днів) |
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| NCP81151BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC Supply voltage: 4.5...5.5V DC Mounting: SMD Kind of integrated circuit: gate driver; high-side; low-side Operating temperature: -40...100°C Case: DFN8 Type of integrated circuit: driver |
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| NCP81151MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...100°C Case: DFN8 |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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| NCP81152MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; QFN16 Supply voltage: 4.5...5.5V DC Mounting: SMD Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Operating temperature: -40...100°C Case: QFN16 Type of integrated circuit: driver |
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| NCP81155MNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC Supply voltage: 4.5...13.2V DC Mounting: SMD Kind of integrated circuit: gate driver; high-side; low-side Operating temperature: -10...125°C Case: DFN8 Type of integrated circuit: driver |
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| NCP81158MNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Operating temperature: -40...100°C Case: DFN8 Type of integrated circuit: driver |
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4N35SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 30V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 2µs |
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4N35SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 2µs |
на замовлення 816 шт: термін постачання 21-30 дні (днів) |
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4N35VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
на замовлення 334 шт: термін постачання 21-30 дні (днів) |
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| FSQ0565RQWDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller,resonant mode controller; 1.7A; 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller; resonant mode controller Output current: 1.7A Output voltage: 650V Frequency: 66.7kHz Number of channels: 1 Case: TO220F-6L Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.2Ω Power: 60W |
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| FSQ0565RSWDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller,resonant mode controller; 1.7A; 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller; resonant mode controller Output current: 1.7A Output voltage: 650V Frequency: 66.7kHz Number of channels: 1 Case: TO220F-6L Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.2Ω Power: 60W Operating voltage: 8...19V |
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| FSDM0565REWDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.7A; 650V; 66kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.7A Output voltage: 650V Frequency: 66kHz Number of channels: 1 Case: TO220F-6L Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.2Ω Duty cycle factor: 77...87% Power: 60W Application: SMPS Operating voltage: 8...19V |
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| FSGM0565RBWDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3A; 650V; 66kHz; Ch: 1; TO220F-6W; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3A Output voltage: 650V Frequency: 66kHz Number of channels: 1 Case: TO220F-6W Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.2Ω Duty cycle factor: 65...75% Power: 60W Operating voltage: 7.5...24.5V |
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| FSGM0565RLDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.2A; 650V; 66kHz; Ch: 1; TO220F-6L; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.2A Output voltage: 650V Frequency: 66kHz Number of channels: 1 Case: TO220F-6L Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.2Ω Duty cycle factor: 65...75% Power: 60W Operating voltage: 7.5...24.5V |
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| FSGM0565RUDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.2A; 650V; 66kHz; Ch: 1; TO220F-6U; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.2A Output voltage: 650V Frequency: 66kHz Number of channels: 1 Case: TO220F-6U Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.2Ω Duty cycle factor: 65...75% Power: 60W Operating voltage: 7.5...24.5V |
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| KA1M0565RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 2.2Ω Duty cycle factor: 74...80% Kind of package: tube Power: 140W Operating voltage: 10...25V |
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| FQD1N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FQN1N60CTA | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.18A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of channel: enhanced |
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FQT1N60CTF-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| FQU1N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Gate charge: 6.2nC Kind of package: tube Kind of channel: enhanced |
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| FCB11N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 33A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced |
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FCP11N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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| NC7WB3125K8X | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,bus switch; CMOS,TTL; SMD; MO187,US8; 4÷5.5VDC Supply voltage: 4...5.5V DC Operating temperature: -40...85°C Case: MO187; US8 Mounting: SMD Kind of integrated circuit: 2bit; bus switch Kind of package: reel; tape Technology: CMOS; TTL Type of integrated circuit: digital Quiescent current: 3µA |
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2N3055G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 15A; 115W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 115W Case: TO3 Mounting: THT Kind of package: in-tray |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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MMUN2211LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 9168 шт: термін постачання 21-30 дні (днів) |
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SMMUN2211LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 4325 шт: термін постачання 21-30 дні (днів) |
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| NRVB8H100MFSWFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; DFN5; reel,tape
Mounting: SMD
Max. forward impulse current: 75A
Case: DFN5
Kind of package: reel; tape
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. load current: 16A
Max. off-state voltage: 100V
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; DFN5; reel,tape
Mounting: SMD
Max. forward impulse current: 75A
Case: DFN5
Kind of package: reel; tape
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. load current: 16A
Max. off-state voltage: 100V
Application: automotive industry
Type of diode: Schottky rectifying
товар відсутній
| NRVB8H100MFSWFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; DFN5; reel,tape
Mounting: SMD
Max. forward impulse current: 75A
Case: DFN5
Kind of package: reel; tape
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. load current: 16A
Max. off-state voltage: 100V
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; DFN5; reel,tape
Mounting: SMD
Max. forward impulse current: 75A
Case: DFN5
Kind of package: reel; tape
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. load current: 16A
Max. off-state voltage: 100V
Application: automotive industry
Type of diode: Schottky rectifying
товар відсутній
| NRVB30H100MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape
Mounting: SMD
Max. forward impulse current: 300A
Case: DFN5
Kind of package: reel; tape
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. load current: 60A
Max. off-state voltage: 100V
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape
Mounting: SMD
Max. forward impulse current: 300A
Case: DFN5
Kind of package: reel; tape
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. load current: 60A
Max. off-state voltage: 100V
Application: automotive industry
Type of diode: Schottky rectifying
товар відсутній
| NRVB30H100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 300A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 300A
Application: automotive industry
товар відсутній
| NRVTS30100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 350A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 350A
Application: automotive industry
товар відсутній
| NCP45560IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
On-state resistance: 6.8mΩ
Output current: 17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
On-state resistance: 6.8mΩ
Output current: 17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
товар відсутній
| NCP45560IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
On-state resistance: 6.8mΩ
Output current: 17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
On-state resistance: 6.8mΩ
Output current: 17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
товар відсутній
| NDT2955 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 6700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 43.37 грн |
| 11+ | 33.61 грн |
| 39+ | 21.74 грн |
| 108+ | 20.57 грн |
| 500+ | 19.77 грн |
| NTF2955T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
товар відсутній
| NVF2955T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 14.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 14.3nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 805 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.96 грн |
| 6+ | 70.29 грн |
| 18+ | 49.05 грн |
| 48+ | 46.12 грн |
| TIP2955G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 90W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 90W
Case: TO247-3
Current gain: 5...70
Mounting: THT
Kind of package: tube
Frequency: 2.5MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 90W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 90W
Case: TO247-3
Current gain: 5...70
Mounting: THT
Kind of package: tube
Frequency: 2.5MHz
товар відсутній
| LM385BD-1.2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 20mA
товар відсутній
| LM385BD-1.2R2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
товар відсутній
| LM385BD-2.5G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 20mA
товар відсутній
| LM385BD-2.5R2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
товар відсутній
| KDT00030TR |
|
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; 630nm; 6V
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 630nm
Collector-emitter voltage: 6V
Mounting: SMD
Category: Phototransistors
Description: Phototransistor; 630nm; 6V
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 630nm
Collector-emitter voltage: 6V
Mounting: SMD
на замовлення 2910 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.38 грн |
| 13+ | 29.14 грн |
| 25+ | 24.16 грн |
| 41+ | 21.2 грн |
| 111+ | 20.04 грн |
| 500+ | 19.77 грн |
| BC807-16LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 5864 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.25 грн |
| 46+ | 8.05 грн |
| 58+ | 6.36 грн |
| 135+ | 2.72 грн |
| 539+ | 1.57 грн |
| 1000+ | 1.49 грн |
| 3000+ | 1.48 грн |
| BC807-16LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| FFSP3065A |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; 40W; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Max. load current: 75A
Power dissipation: 40W
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Heatsink thickness: max. 1.4mm
Max. forward impulse current: 150A
Max. forward voltage: 2.4V
Leakage current: 0.6mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; 40W; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Max. load current: 75A
Power dissipation: 40W
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Heatsink thickness: max. 1.4mm
Max. forward impulse current: 150A
Max. forward voltage: 2.4V
Leakage current: 0.6mA
товар відсутній
| BC856ALT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.1 грн |
| 85+ | 4.32 грн |
| 159+ | 2.31 грн |
| 500+ | 1.55 грн |
| 817+ | 1.04 грн |
| MC74HC4051ADG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
на замовлення 285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.62 грн |
| 10+ | 41.07 грн |
| 35+ | 24.86 грн |
| 95+ | 23.51 грн |
| 144+ | 23.5 грн |
| MC74HC4051ADR2G | |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2÷6VDC; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2÷6VDC; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
на замовлення 1977 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 44.94 грн |
| 25+ | 31.34 грн |
| 63+ | 13.69 грн |
| 171+ | 12.96 грн |
| MC74HC4051ADTG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
на замовлення 151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.63 грн |
| 10+ | 66.04 грн |
| 22+ | 40.28 грн |
| 59+ | 38.08 грн |
| MC74HC4051ADTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; TSSOP16; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; TSSOP16; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
товар відсутній
| MC74HC4051ADWG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.02 грн |
| 10+ | 55.35 грн |
| 23+ | 37.82 грн |
| 62+ | 35.77 грн |
| MC74HC4051ADWR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Manufacturer series: HC
Supply voltage: 2...6V DC; 2...12V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| FNB41060 |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V
Frequency: 20kHz
Power dissipation: 32W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V
Frequency: 20kHz
Power dissipation: 32W
Collector-emitter voltage: 600V
товар відсутній
| 2SC5707-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 8A; 1W; TO252
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Mounting: SMD
Case: TO252
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 8A; 1W; TO252
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Mounting: SMD
Case: TO252
на замовлення 168 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.96 грн |
| 7+ | 59.3 грн |
| 19+ | 46.86 грн |
| 50+ | 44.66 грн |
| NCP1602DCCSNT1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; TSOP6; 9÷30V; Topology: boost
Type of integrated circuit: PMIC
Topology: boost
Case: TSOP6
Output current: -500...800mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...30V
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; TSOP6; 9÷30V; Topology: boost
Type of integrated circuit: PMIC
Topology: boost
Case: TSOP6
Output current: -500...800mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...30V
товар відсутній
| NCP1622DCCSNT1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; TSOP6; 9÷30V; Topology: boost
Type of integrated circuit: PMIC
Topology: boost
Case: TSOP6
Output current: -500...800mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...30V
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; TSOP6; 9÷30V; Topology: boost
Type of integrated circuit: PMIC
Topology: boost
Case: TSOP6
Output current: -500...800mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...30V
товар відсутній
| NCP1342AMDCCDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8; flyback
Type of integrated circuit: PMIC
Topology: flyback
Case: SO8
Output current: -500...800mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...28V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 9÷28V; SO8; flyback
Type of integrated circuit: PMIC
Topology: flyback
Case: SO8
Output current: -500...800mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...28V
товар відсутній
| MMBZ9V1ALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 9.1V; 1.7A; 24W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 9.1V
Leakage current: 0.3µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Case: SOT23
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 9.1V; 1.7A; 24W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 9.1V
Leakage current: 0.3µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Case: SOT23
Tolerance: ±5%
на замовлення 6775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 11.83 грн |
| 49+ | 7.61 грн |
| 62+ | 5.94 грн |
| 100+ | 4.08 грн |
| 395+ | 2.19 грн |
| 1084+ | 2.06 грн |
| 6000+ | 1.98 грн |
| SZMMBZ9V1ALT3G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 9.1V; 1.7A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 9.1V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
Category: Transil diodes - arrays
Description: Diode: TVS array; 9.1V; 1.7A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.7A
Breakdown voltage: 9.1V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
товар відсутній
| 1N5349BG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 12V; bulk; CASE017AA; single diode; 2uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 12V; bulk; CASE017AA; single diode; 2uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 4040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.99 грн |
| 25+ | 19.04 грн |
| 64+ | 13.48 грн |
| 174+ | 12.75 грн |
| 1000+ | 12.15 грн |
| 1N5349BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 12V; reel,tape; CASE017AA; single diode; 2uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 12V; reel,tape; CASE017AA; single diode; 2uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 2956 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.6 грн |
| 16+ | 22.92 грн |
| 50+ | 18.16 грн |
| 69+ | 12.37 грн |
| 190+ | 11.71 грн |
| 1000+ | 11.2 грн |
| NCP81151BMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Operating temperature: -40...100°C
Case: DFN8
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Operating temperature: -40...100°C
Case: DFN8
Type of integrated circuit: driver
товар відсутній
| NCP81151MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...100°C
Case: DFN8
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...100°C
Case: DFN8
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.04 грн |
| 21+ | 17.57 грн |
| 25+ | 15.81 грн |
| 68+ | 12.65 грн |
| 185+ | 11.96 грн |
| NCP81152MNTWG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; QFN16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Operating temperature: -40...100°C
Case: QFN16
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; QFN16
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Operating temperature: -40...100°C
Case: QFN16
Type of integrated circuit: driver
товар відсутній
| NCP81155MNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Operating temperature: -10...125°C
Case: DFN8
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷13.2VDC
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Operating temperature: -10...125°C
Case: DFN8
Type of integrated circuit: driver
товар відсутній
| NCP81158MNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Operating temperature: -40...100°C
Case: DFN8
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Operating temperature: -40...100°C
Case: DFN8
Type of integrated circuit: driver
товар відсутній
| 4N35SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
товар відсутній
| 4N35SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 816 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 43.37 грн |
| 15+ | 25.19 грн |
| 50+ | 17.21 грн |
| 137+ | 16.25 грн |
| 500+ | 15.67 грн |
| 4N35VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.79 грн |
| 15+ | 25.19 грн |
| 25+ | 21.82 грн |
| 42+ | 20.72 грн |
| 50+ | 19.77 грн |
| 100+ | 18.96 грн |
| FSQ0565RQWDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 1.7A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 1.7A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Power: 60W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 1.7A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 1.7A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Power: 60W
товар відсутній
| FSQ0565RSWDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 1.7A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 1.7A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Power: 60W
Operating voltage: 8...19V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 1.7A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 1.7A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Power: 60W
Operating voltage: 8...19V
товар відсутній
| FSDM0565REWDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.7A; 650V; 66kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.7A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 77...87%
Power: 60W
Application: SMPS
Operating voltage: 8...19V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.7A; 650V; 66kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.7A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 77...87%
Power: 60W
Application: SMPS
Operating voltage: 8...19V
товар відсутній
| FSGM0565RBWDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3A; 650V; 66kHz; Ch: 1; TO220F-6W; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6W
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 65...75%
Power: 60W
Operating voltage: 7.5...24.5V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3A; 650V; 66kHz; Ch: 1; TO220F-6W; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6W
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 65...75%
Power: 60W
Operating voltage: 7.5...24.5V
товар відсутній
| FSGM0565RLDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 650V; 66kHz; Ch: 1; TO220F-6L; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 65...75%
Power: 60W
Operating voltage: 7.5...24.5V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 650V; 66kHz; Ch: 1; TO220F-6L; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 65...75%
Power: 60W
Operating voltage: 7.5...24.5V
товар відсутній
| FSGM0565RUDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 650V; 66kHz; Ch: 1; TO220F-6U; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 65...75%
Power: 60W
Operating voltage: 7.5...24.5V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 650V; 66kHz; Ch: 1; TO220F-6U; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 65...75%
Power: 60W
Operating voltage: 7.5...24.5V
товар відсутній
| KA1M0565RYDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V
товар відсутній
| FQD1N60CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQN1N60CTA |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| FQT1N60CTF-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQU1N60CTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Gate charge: 6.2nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Gate charge: 6.2nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCB11N60TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FCP11N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.48 грн |
| 7+ | 132.52 грн |
| 18+ | 125.93 грн |
| NC7WB3125K8X |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,bus switch; CMOS,TTL; SMD; MO187,US8; 4÷5.5VDC
Supply voltage: 4...5.5V DC
Operating temperature: -40...85°C
Case: MO187; US8
Mounting: SMD
Kind of integrated circuit: 2bit; bus switch
Kind of package: reel; tape
Technology: CMOS; TTL
Type of integrated circuit: digital
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,bus switch; CMOS,TTL; SMD; MO187,US8; 4÷5.5VDC
Supply voltage: 4...5.5V DC
Operating temperature: -40...85°C
Case: MO187; US8
Mounting: SMD
Kind of integrated circuit: 2bit; bus switch
Kind of package: reel; tape
Technology: CMOS; TTL
Type of integrated circuit: digital
Quiescent current: 3µA
товар відсутній
| 2N3055G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 115W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 115W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.67 грн |
| 5+ | 194.75 грн |
| 13+ | 183.77 грн |
| MMUN2211LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 9168 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.88 грн |
| 71+ | 5.2 грн |
| 132+ | 2.77 грн |
| 500+ | 1.81 грн |
| 741+ | 1.15 грн |
| 2038+ | 1.09 грн |
| 6000+ | 1.07 грн |
| 9000+ | 1.05 грн |
| SMMUN2211LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 4325 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.41 грн |
| 90+ | 4.1 грн |
| 100+ | 3.68 грн |
| 305+ | 2.82 грн |
| 835+ | 2.66 грн |