| Фото | Назва | Виробник | Інформація |
Доступність |
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CNW11AV3300 | onsemi |
 Description: OPTOCOUPLER TRANS OUT 6-DIPPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 4000Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
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S2A | onsemi |
Description: DIODE SMB 50V 2A 150C Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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S2A | onsemi |
Description: DIODE SMB 50V 2A 150C Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
на замовлення 34944 шт: термін постачання 21-31 дні (днів) |
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LM2576TV-012G | onsemi |
Description: IC REG BUCK 12V 3A TO220-5 Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Fixed Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 52kHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: TO-220-5 Synchronous Rectifier: No Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 12V |
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LF353D | onsemi |
Description: IC OPAMP JFET 2 CIRCUIT 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 3.6mA (x2 Channels) Slew Rate: 13V/µs Gain Bandwidth Product: 3 MHz Current - Input Bias: 50 pA Voltage - Input Offset: 5 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 7 V Voltage - Supply Span (Max): 36 V |
на замовлення 5473 шт: термін постачання 21-31 дні (днів) |
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FOD8802D | onsemi |
Description: 8SO 2-CH TR Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 6µs, 7µs Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FFSP0665A | onsemi |
Description: DIODE SIL CARB 650V 8.8A TO220L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 100kHz Current - Average Rectified (Io): 8.8A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 2370 шт: термін постачання 21-31 дні (днів) |
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FFSB0665A | onsemi |
Description: DIODE SIL CARB 650V 9A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 100kHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FFSB0665A | onsemi |
Description: DIODE SIL CARB 650V 9A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 100kHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 12670 шт: термін постачання 21-31 дні (днів) |
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FFSP0865A | onsemi |
Description: DIODE SIL CARB 650V 13A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 463pF @ 1V, 100kHz Current - Average Rectified (Io): 13A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 788 шт: термін постачання 21-31 дні (днів) |
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| N34TS04MU3ETG | onsemi |
Description: THERMOSTAT PROG ACTIVE LOW 8UDFN Packaging: Tape & Reel (TR) Features: Selectable Hysteresis Package / Case: 8-UDFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Output: Active Low Accuracy: ±2% Operating Temperature: -45°C ~ 130°C Current - Supply: 1mA Switching Temperature: Programmable Supplier Device Package: 8-UDFN (2x3) Output Function: /OverTemp, /UnderTemp Selectable Hysteresis: Yes Voltage - Supply: 2.2 V ~ 3.6 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| N34TS04MU3ETG | onsemi |
Description: THERMOSTAT PROG ACTIVE LOW 8UDFN Packaging: Bulk Features: Selectable Hysteresis Package / Case: 8-UDFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Output: Active Low Accuracy: ±2% Operating Temperature: -45°C ~ 130°C Current - Supply: 1mA Switching Temperature: Programmable Supplier Device Package: 8-UDFN (2x3) Output Function: /OverTemp, /UnderTemp Selectable Hysteresis: Yes Voltage - Supply: 2.2 V ~ 3.6 V |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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H11L1 | onsemi |
 Description: ISOLAT 7.5KVPK 1CH UNIDIR 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Data Rate: 1MHz Input Type: DC Voltage - Isolation: 5300Vrms Current - DC Forward (If) (Max): 1.6mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-DIP Number of Channels: 1 Current - Output / Channel: 50 mA |
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1N4002GP | onsemi |
Description: DIODE GEN PURP 100V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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MM3Z10VT1 | onsemi |
Description: DIODE ZENER 10V 200MW SOD-323 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
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NVMFS4C308NWFT1G | onsemi |
Description: TRENCH 30V NCH Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 30.6W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Qualification: AEC-Q101 |
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NVMFS6H858NWFT1G | onsemi |
Description: MOSFET N-CH 80V 8.4A/29A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H858NWFT1G | onsemi |
Description: MOSFET N-CH 80V 8.4A/29A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 24A/160A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C646NLWFAFT1G | onsemi |
Description: MOSFET N-CH 60V 20A/93A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C646NLWFAFT1G | onsemi |
Description: MOSFET N-CH 60V 20A/93A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NWFT1G | onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NWFT1G | onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ32M5X-L22090 | onsemi |
Description: IC GATE OR 1CH 2-INP SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
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NC7S04M5X-L22090 | onsemi |
Description: IC INVERTER 1CH 1-INP SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
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NC7S86M5X-L22090 | onsemi |
Description: IC GATE XOR 1CH 2-INP SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
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| MCR708A1G | onsemi |
Description: THY DPAK 4A 600V SCR FG Packaging: Bulk |
на замовлення 21887 шт: термін постачання 21-31 дні (днів) |
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6N137M | onsemi |
Description: OPTOISO 5KV 1CH OPEN COLL 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 345797 шт: термін постачання 21-31 дні (днів) |
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MOC3021SM | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 809 шт: термін постачання 21-31 дні (днів) |
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4N35M | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 5772 шт: термін постачання 21-31 дні (днів) |
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LM2902MX | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Gain Bandwidth Product: 1 MHz Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
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LM2902MX | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Gain Bandwidth Product: 1 MHz Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
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LM2902M | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOP Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
на замовлення 10559 шт: термін постачання 21-31 дні (днів) |
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LB1962MC-AH | onsemi |
Description: IC MOTOR DRVR 3.8V-16.8V 10SOIC Packaging: Tape & Reel (TR) |
товар відсутній |
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LB1940T-MPB-H | onsemi |
Description: IC HALF BRIDGE DRV 400MA 20TSSOP Packaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.9V ~ 6.5V Applications: DC Motors, General Purpose, Stepper Motors Current - Output / Channel: 400mA Technology: Bipolar Voltage - Load: 1.6V ~ 7.5V Supplier Device Package: 20-TSSOP Load Type: Inductive |
на замовлення 1573 шт: термін постачання 21-31 дні (днів) |
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LB1940T-MPB-H | onsemi |
Description: IC HALF BRIDGE DRV 400MA 20TSSOP Packaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.9V ~ 6.5V Applications: DC Motors, General Purpose, Stepper Motors Current - Output / Channel: 400mA Technology: Bipolar Voltage - Load: 1.6V ~ 7.5V Supplier Device Package: 20-TSSOP Load Type: Inductive |
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AR0821CSSC18SMEA1-DPBR | onsemi |
Description: 8MP 1/2 CIS SO Packaging: Tray Package / Case: 95-FBGA Type: CMOS Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 60.0 |
на замовлення 159300 шт: термін постачання 21-31 дні (днів) |
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74F109PC | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 17 mA Current - Output High, Low: 1mA, 20mA Trigger Type: Positive Edge Clock Frequency: 125 MHz Supplier Device Package: 16-PDIP Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Bits per Element: 1 |
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74F109SJX | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 17 mA Current - Output High, Low: 1mA, 20mA Trigger Type: Positive Edge Clock Frequency: 125 MHz Supplier Device Package: 16-SOP Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Bits per Element: 1 |
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74F109SCX | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 17 mA Current - Output High, Low: 1mA, 20mA Trigger Type: Positive Edge Clock Frequency: 125 MHz Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Bits per Element: 1 |
товар відсутній |
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NTLUS4195PZTAG | onsemi |
Description: MOSFET P-CH 30V 2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
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NTLJD3181PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 2.2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
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NTLUS3A39PZTAG | onsemi |
Description: MOSFET P-CH 20V 3.4A 6UDFN Packaging: Bulk Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V |
на замовлення 190793 шт: термін постачання 21-31 дні (днів) |
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NTLUD3A260PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 1.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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NCP81278DMNTXG | onsemi |
Description: IC SYNC BUCK CTLR 4PHASE 20QFN Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Voltage - Output: Up to 2V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.6V ~ 24V Operating Temperature: -40°C ~ 125°C (TA) Applications: Controller, CPU GPU Supplier Device Package: 20-QFN (3x3) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NCP81278DMNTXG | onsemi |
Description: IC SYNC BUCK CTLR 4PHASE 20QFN Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Voltage - Output: Up to 2V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.6V ~ 24V Operating Temperature: -40°C ~ 125°C (TA) Applications: Controller, CPU GPU Supplier Device Package: 20-QFN (3x3) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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2SD1801S-E | onsemi |
Description: TRANS NPN 50V 2A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
на замовлення 95133 шт: термін постачання 21-31 дні (днів) |
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2SD1801T-E | onsemi |
Description: TRANS NPN 50V 2A TP-FA Packaging: Bag |
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FGB20N60SF | onsemi |
Description: IGBT FIELD STOP 600V 40A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/90ns Switching Energy: 370µJ (on), 160µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W |
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FGB20N60SF | onsemi |
Description: IGBT FIELD STOP 600V 40A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/90ns Switching Energy: 370µJ (on), 160µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W |
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2SC6043 | onsemi |
Description: TRANS NPN 50V 2A 3MP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 5552 шт: термін постачання 21-31 дні (днів) |
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| LC898150XH-MH | onsemi |
Description: IC MOTOR DVR OIS AF 21WLCSP Packaging: Bulk Package / Case: 21-XFBGA, WLCSP Mounting Type: Surface Mount Function: Driver Current - Output: 130mA Interface: PWM, SPI Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Applications: General Purpose Voltage - Load: 1.7V ~ 3.3V Supplier Device Package: 21-WLCSP (1.17x2.77) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
на замовлення 66006 шт: термін постачання 21-31 дні (днів) |
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DM74ALS109AN | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 mA Current - Output High, Low: 400µA, 8mA Trigger Type: Positive Edge Clock Frequency: 34 MHz Supplier Device Package: 16-PDIP Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF Number of Bits per Element: 1 |
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DM74ALS109AMX | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 mA Current - Output High, Low: 400µA, 8mA Trigger Type: Positive Edge Clock Frequency: 34 MHz Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF Number of Bits per Element: 1 |
товар відсутній |
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DM74ALS109AM | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 mA Current - Output High, Low: 400µA, 8mA Trigger Type: Positive Edge Clock Frequency: 34 MHz Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF Number of Bits per Element: 1 |
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2SC3661-TB-E | onsemi |
Description: NPN SILICON TRANSISTOR Packaging: Bulk |
на замовлення 601000 шт: термін постачання 21-31 дні (днів) |
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FFSH2065BDN-F085 | onsemi |
Description: DIODE ARR SIC SCHOT 650V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 7155 шт: термін постачання 21-31 дні (днів) |
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FFSH2065B-F085 | onsemi |
Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 264 шт: термін постачання 21-31 дні (днів) |
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NRVBSS25FA | onsemi |
Description: DIODE SCHOTTKY 50V 2A SOD123FA Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 93pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 50 V Qualification: AEC-Q101 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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MC14043BCPG | onsemi |
Description: IC LATCH R-S QUAD NOR 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Tri-State Mounting Type: Through Hole Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-PDIP |
товар відсутній |
| CNW11AV3300 |
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Виробник: onsemi
Description: OPTOCOUPLER TRANS OUT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOCOUPLER TRANS OUT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
товар відсутній
| S2A |
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Виробник: onsemi
Description: DIODE SMB 50V 2A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE SMB 50V 2A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.67 грн |
| 6000+ | 6.28 грн |
| 9000+ | 5.56 грн |
| 30000+ | 5.15 грн |
| S2A |
|
Виробник: onsemi
Description: DIODE SMB 50V 2A 150C
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE SMB 50V 2A 150C
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 34944 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.08 грн |
| 15+ | 20.64 грн |
| 100+ | 10.41 грн |
| 500+ | 8.66 грн |
| 1000+ | 6.74 грн |
| LM2576TV-012G |
|
Виробник: onsemi
Description: IC REG BUCK 12V 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 12V
Description: IC REG BUCK 12V 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 12V
товар відсутній
| LF353D |
|
Виробник: onsemi
Description: IC OPAMP JFET 2 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 3.6mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP JFET 2 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 3.6mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 36 V
на замовлення 5473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 684+ | 30.44 грн |
| FOD8802D |
|
Виробник: onsemi
Description: 8SO 2-CH TR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 6µs, 7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Description: 8SO 2-CH TR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 6µs, 7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.11 грн |
| 50+ | 85.12 грн |
| 100+ | 65.5 грн |
| 500+ | 55.57 грн |
| 1000+ | 47.76 грн |
| 2000+ | 45.15 грн |
| 5000+ | 43.39 грн |
| FFSP0665A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 8.8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 8.8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 8.8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 8.8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 2370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.79 грн |
| 50+ | 153.08 грн |
| 100+ | 131.21 грн |
| 500+ | 109.46 грн |
| 1000+ | 93.72 грн |
| 2000+ | 88.25 грн |
| FFSB0665A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 9A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 9A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 126.29 грн |
| 1600+ | 104.13 грн |
| 2400+ | 98.05 грн |
| 5600+ | 88.28 грн |
| FFSB0665A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 9A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 9A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 12670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.07 грн |
| 10+ | 169.17 грн |
| 100+ | 136.81 грн |
| FFSP0865A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.41 грн |
| 10+ | 197.63 грн |
| 100+ | 159.92 грн |
| N34TS04MU3ETG |
|
Виробник: onsemi
Description: THERMOSTAT PROG ACTIVE LOW 8UDFN
Packaging: Tape & Reel (TR)
Features: Selectable Hysteresis
Package / Case: 8-UDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±2%
Operating Temperature: -45°C ~ 130°C
Current - Supply: 1mA
Switching Temperature: Programmable
Supplier Device Package: 8-UDFN (2x3)
Output Function: /OverTemp, /UnderTemp
Selectable Hysteresis: Yes
Voltage - Supply: 2.2 V ~ 3.6 V
Description: THERMOSTAT PROG ACTIVE LOW 8UDFN
Packaging: Tape & Reel (TR)
Features: Selectable Hysteresis
Package / Case: 8-UDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±2%
Operating Temperature: -45°C ~ 130°C
Current - Supply: 1mA
Switching Temperature: Programmable
Supplier Device Package: 8-UDFN (2x3)
Output Function: /OverTemp, /UnderTemp
Selectable Hysteresis: Yes
Voltage - Supply: 2.2 V ~ 3.6 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 33.1 грн |
| N34TS04MU3ETG |
|
Виробник: onsemi
Description: THERMOSTAT PROG ACTIVE LOW 8UDFN
Packaging: Bulk
Features: Selectable Hysteresis
Package / Case: 8-UDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±2%
Operating Temperature: -45°C ~ 130°C
Current - Supply: 1mA
Switching Temperature: Programmable
Supplier Device Package: 8-UDFN (2x3)
Output Function: /OverTemp, /UnderTemp
Selectable Hysteresis: Yes
Voltage - Supply: 2.2 V ~ 3.6 V
Description: THERMOSTAT PROG ACTIVE LOW 8UDFN
Packaging: Bulk
Features: Selectable Hysteresis
Package / Case: 8-UDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±2%
Operating Temperature: -45°C ~ 130°C
Current - Supply: 1mA
Switching Temperature: Programmable
Supplier Device Package: 8-UDFN (2x3)
Output Function: /OverTemp, /UnderTemp
Selectable Hysteresis: Yes
Voltage - Supply: 2.2 V ~ 3.6 V
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 705+ | 29.86 грн |
| H11L1 | |
|
Виробник: onsemi
Description: ISOLAT 7.5KVPK 1CH UNIDIR 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 5300Vrms
Current - DC Forward (If) (Max): 1.6mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: ISOLAT 7.5KVPK 1CH UNIDIR 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 5300Vrms
Current - DC Forward (If) (Max): 1.6mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
| 1N4002GP |
|
Виробник: onsemi
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| MM3Z10VT1 |
|
Виробник: onsemi
Description: DIODE ZENER 10V 200MW SOD-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 10V 200MW SOD-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
| NVMFS4C308NWFT1G |
|
Виробник: onsemi
Description: TRENCH 30V NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
Description: TRENCH 30V NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
| NVMFS6H858NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 74.69 грн |
| NVMFS6H858NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.93 грн |
| 10+ | 125.86 грн |
| 100+ | 100.18 грн |
| 500+ | 79.55 грн |
| NVMFS6H801NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.46 грн |
| 10+ | 134.41 грн |
| 100+ | 106.94 грн |
| 500+ | 84.92 грн |
| NVMFS5C646NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 81.58 грн |
| NVMFS5C646NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 171.46 грн |
| 10+ | 137.52 грн |
| 100+ | 109.42 грн |
| 500+ | 86.89 грн |
| NVMFS6H801NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 89.2 грн |
| 3000+ | 81.6 грн |
| 7500+ | 78.53 грн |
| NVMFS6H801NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.01 грн |
| 10+ | 150.34 грн |
| 100+ | 119.64 грн |
| 500+ | 95.01 грн |
| NC7SZ32M5X-L22090 |
|
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
| NC7S04M5X-L22090 |
|
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
| NC7S86M5X-L22090 |
|
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
| MCR708A1G |
|
на замовлення 21887 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1066+ | 19.44 грн |
| 6N137M |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH OPEN COLL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV 1CH OPEN COLL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 345797 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.82 грн |
| 50+ | 72.32 грн |
| 100+ | 53.52 грн |
| 500+ | 46.15 грн |
| 1000+ | 38.01 грн |
| 2000+ | 36.11 грн |
| 5000+ | 34.71 грн |
| 10000+ | 33.91 грн |
| MOC3021SM |
|
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 809 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 50.39 грн |
| 50+ | 31.68 грн |
| 100+ | 20.76 грн |
| 4N35M |
|
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 5772 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.65 грн |
| 10+ | 32.08 грн |
| 100+ | 21.27 грн |
| 500+ | 15.98 грн |
| 1000+ | 14.76 грн |
| 2000+ | 13.76 грн |
| 5000+ | 12.5 грн |
| LM2902MX |
|
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товар відсутній
| LM2902MX |
|
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товар відсутній
| LM2902M |
|
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 10559 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 371+ | 56.25 грн |
| LB1940T-MPB-H |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
на замовлення 1573 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 205+ | 101.7 грн |
| LB1940T-MPB-H |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
товар відсутній
| AR0821CSSC18SMEA1-DPBR |
|
Виробник: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
на замовлення 159300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2700+ | 2446.63 грн |
| 74F109PC |
|
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
| 74F109SJX |
|
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
| 74F109SCX |
|
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
| NTLUS4195PZTAG |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
товар відсутній
| NTLJD3181PZTAG |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
товар відсутній
| NTLUS3A39PZTAG |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
на замовлення 190793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 784+ | 26.76 грн |
| NTLUD3A260PZTAG |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.6 грн |
| 10+ | 30.42 грн |
| 100+ | 21.15 грн |
| 500+ | 15.5 грн |
| NCP81278DMNTXG |
|
Виробник: onsemi
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 35.01 грн |
| 8000+ | 32.44 грн |
| NCP81278DMNTXG |
|
Виробник: onsemi
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.48 грн |
| 10+ | 74.81 грн |
| 25+ | 70.97 грн |
| 100+ | 51.14 грн |
| 250+ | 45.19 грн |
| 500+ | 42.81 грн |
| 1000+ | 32.75 грн |
| 2SD1801S-E |
|
Виробник: onsemi
Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 95133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1017+ | 20.83 грн |
| FGB20N60SF |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Description: IGBT FIELD STOP 600V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
товар відсутній
| FGB20N60SF |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
Description: IGBT FIELD STOP 600V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 208 W
товар відсутній
| 2SC6043 |
|
Виробник: onsemi
Description: TRANS NPN 50V 2A 3MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 2A 3MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 5552 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1480+ | 14.03 грн |
| LC898150XH-MH |
Виробник: onsemi
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Bulk
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Bulk
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
на замовлення 66006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 168+ | 124.27 грн |
| DM74ALS109AN |
|
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
| DM74ALS109AMX |
|
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
| DM74ALS109AM |
|
Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
товар відсутній
| 2SC3661-TB-E |
|
на замовлення 601000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1567+ | 13.15 грн |
| FFSH2065BDN-F085 |
|
Виробник: onsemi
Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 7155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 580.57 грн |
| 30+ | 446.17 грн |
| 120+ | 399.21 грн |
| 510+ | 330.57 грн |
| 1020+ | 297.51 грн |
| 2010+ | 278.78 грн |
| FFSH2065B-F085 |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 264 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 595.61 грн |
| 30+ | 457.78 грн |
| 120+ | 409.59 грн |
| NRVBSS25FA |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.34 грн |
| 12+ | 24.48 грн |
| 100+ | 14.66 грн |
| 500+ | 12.74 грн |
| 1000+ | 8.66 грн |
| MC14043BCPG |
|
Виробник: onsemi
Description: IC LATCH R-S QUAD NOR 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-PDIP
Description: IC LATCH R-S QUAD NOR 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-PDIP
товар відсутній