Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RGP10K | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товар відсутній |
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RGP10K | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 3530 шт: термін постачання 21-31 дні (днів) |
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NTMFS4835NT1G | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V |
на замовлення 1024741 шт: термін постачання 21-31 дні (днів) |
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SZESD7241MXWT5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom, USB Capacitance @ Frequency: 1pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: 2-X2DFNW (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.3V Voltage - Clamping (Max) @ Ipp: 48V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 79885 шт: термін постачання 21-31 дні (днів) |
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GBPC1202W | onsemi |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 12 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MC100EP131FAR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-LQFP Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: -3V ~ -5.5V Current - Quiescent (Iq): 120 mA Trigger Type: Positive, Negative Clock Frequency: 3 GHz Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 4 |
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MC100EP131FAR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 32-LQFP Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: -3V ~ -5.5V Current - Quiescent (Iq): 120 mA Trigger Type: Positive, Negative Clock Frequency: 3 GHz Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 4 |
на замовлення 1799 шт: термін постачання 21-31 дні (днів) |
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KSA812YMTF | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 15867 шт: термін постачання 21-31 дні (днів) |
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NSV12200LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 540 mW Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NSV12200LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 540 mW Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCV500SN33T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.23V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA Qualification: AEC-Q100 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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NCV500SN33T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.23V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA Qualification: AEC-Q100 |
на замовлення 41982 шт: термін постачання 21-31 дні (днів) |
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MUN2231T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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MUN2231T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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MUN2240T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms |
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MUN2240T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms |
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MUN2240T1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms |
на замовлення 319000 шт: термін постачання 21-31 дні (днів) |
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MUN2241T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms |
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MUN2241T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms |
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MUN2241T1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms |
на замовлення 177000 шт: термін постачання 21-31 дні (днів) |
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MUN2230T1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
на замовлення 405000 шт: термін постачання 21-31 дні (днів) |
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MUN2237T1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 389700 шт: термін постачання 21-31 дні (днів) |
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MUN2234T1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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MUN2231T1 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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MUN2241T1 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 100 kOhms |
на замовлення 80975 шт: термін постачання 21-31 дні (днів) |
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MUN2212T1 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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4N38 | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 5µs, 5µs Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
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NTMFS7D5N15MC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 295µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V |
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NTMFS7D5N15MC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 295µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V |
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LM2575D2T-015 | onsemi |
![]() Packaging: Tube Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 52kHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: D2PAK-5 Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 15V |
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NVMFS4C01NWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS4C01NWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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MICROFC-30050-SMT-TR1 | onsemi |
![]() Packaging: Strip Package / Case: 4-SMD, No Lead Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 600ps Spectral Range: 300nm ~ 950nm Color - Enhanced: Blue Active Area: 9mm² Current - Dark (Typ): 319nA Voltage - DC Reverse (Vr) (Max): 24.7 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MMBF4091 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Power - Max: 350 mW Resistance - RDS(On): 30 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V |
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NCP1280DR2 | onsemi |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 62%, 80% Frequency - Switching: 150kHz ~ 300kHz Internal Switch(s): No Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Forward, Secondary Side SR Voltage - Supply (Vcc/Vdd): 7V ~ 25V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Over Voltage Voltage - Start Up: 11 V Control Features: Frequency Control, Soft Start |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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CAT524WI-T2 | onsemi |
Description: IC POT DIGIT 4CH 8BIT BUF 14SOIC Resistance (Ohms): 24k Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Number of Taps: 256 Voltage - Supply: 2.7V ~ 5.5V Supplier Device Package: 14-SOIC Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 4 DigiKey Programmable: Not Verified |
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SB350 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товар відсутній |
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SB350 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товар відсутній |
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CAT5251WI-00 | onsemi |
![]() Resistance (Ohms): 100k Tolerance: ±20% Packaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 256 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 24-SOIC Resistance - Wiper (Ohms) (Typ): 200 Temperature Coefficient (Typ): ±300ppm/°C Number of Circuits: 4 DigiKey Programmable: Not Verified |
на замовлення 987 шт: термін постачання 21-31 дні (днів) |
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DF005M | onsemi |
![]() Packaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-DIP Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 2657 шт: термін постачання 21-31 дні (днів) |
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SB10-05A2-AT1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 50 V |
товар відсутній |
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SB10-05A3 | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 50 V |
товар відсутній |
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SB10-05A2 | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 50 V |
товар відсутній |
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SB10-05A3-BT | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 50 V |
товар відсутній |
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FDS8878-G | onsemi |
Description: MOSFET N-CH 30V 10.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 15 V |
товар відсутній |
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NTTFS6H888NTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V |
товар відсутній |
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NTTFS6H888NTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V |
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NVTFS6H888NWFTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V Qualification: AEC-Q101 |
товар відсутній |
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NVTFS6H888NWFTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V Qualification: AEC-Q101 |
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MJD340T4 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
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NVMYS022N06CTWG | onsemi |
Description: T6 60V SL LFPAK4 5X6 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) |
товар відсутній |
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NSVBAS16TT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
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NSVBAS16TT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 129971 шт: термін постачання 21-31 дні (днів) |
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FDD8424H-F085A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) |
товар відсутній |
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FDD8424H-F085A | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) |
товар відсутній |
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MC74VHC1GT08DFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товар відсутній |
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MC74VHC1GT08DFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товар відсутній |
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MC74VHC1GT08DFT1G-Q | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1V ~ 2V Input Logic Level - Low: 0.28V ~ 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1GT08DFT1G-Q | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1V ~ 2V Input Logic Level - Low: 0.28V ~ 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1GT08DFT2G-Q | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1V ~ 2V Input Logic Level - Low: 0.28V ~ 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 189000 шт: термін постачання 21-31 дні (днів) |
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RGP10K |
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Виробник: onsemi
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RGP10K |
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Виробник: onsemi
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 3530 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.39 грн |
16+ | 18.22 грн |
100+ | 9.21 грн |
500+ | 7.66 грн |
1000+ | 5.96 грн |
2000+ | 5.33 грн |
NTMFS4835NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
на замовлення 1024741 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
510+ | 41.64 грн |
SZESD7241MXWT5G |
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Виробник: onsemi
Description: TVS DIODE 24VWM 48VC 2X2DFNW
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 1pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 2-X2DFNW (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 48VC 2X2DFNW
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom, USB
Capacitance @ Frequency: 1pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: 2-X2DFNW (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 79885 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.65 грн |
14+ | 21.85 грн |
100+ | 13.1 грн |
500+ | 11.39 грн |
1000+ | 7.74 грн |
2000+ | 7.13 грн |
GBPC1202W |
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Виробник: onsemi
Description: BRIDGE RECT 1PH 200V 12A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 12 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PH 200V 12A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 12 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
MC100EP131FAR2G |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
товар відсутній
MC100EP131FAR2G |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
Description: IC FF D-TYPE SNGL 4BIT 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 120 mA
Trigger Type: Positive, Negative
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 4
на замовлення 1799 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1552.98 грн |
10+ | 1379.16 грн |
25+ | 1317.14 грн |
100+ | 1054.3 грн |
250+ | 1003.41 грн |
500+ | 930.7 грн |
KSA812YMTF |
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Виробник: onsemi
Description: TRANS PNP 50V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 15867 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.09 грн |
NSV12200LT1G |
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Виробник: onsemi
Description: TRANS PNP 12V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
Description: TRANS PNP 12V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.68 грн |
6000+ | 10.68 грн |
9000+ | 9.92 грн |
NSV12200LT1G |
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Виробник: onsemi
Description: TRANS PNP 12V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
Description: TRANS PNP 12V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 540 mW
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.68 грн |
11+ | 28.53 грн |
100+ | 19.83 грн |
500+ | 14.53 грн |
1000+ | 11.81 грн |
NCV500SN33T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.5 грн |
6000+ | 13.45 грн |
15000+ | 12.93 грн |
30000+ | 12.02 грн |
NCV500SN33T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
на замовлення 41982 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.96 грн |
10+ | 34.12 грн |
25+ | 32.09 грн |
100+ | 22.82 грн |
250+ | 19.42 грн |
500+ | 18.45 грн |
1000+ | 13.85 грн |
MUN2231T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.14 грн |
6000+ | 1.95 грн |
9000+ | 1.66 грн |
30000+ | 1.44 грн |
75000+ | 1.25 грн |
MUN2231T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.82 грн |
35+ | 8.49 грн |
100+ | 4.57 грн |
500+ | 3.37 грн |
1000+ | 2.34 грн |
MUN2240T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
MUN2240T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
MUN2240T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
на замовлення 319000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.12 грн |
MUN2241T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
товар відсутній
MUN2241T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
товар відсутній
MUN2241T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
на замовлення 177000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.12 грн |
MUN2230T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 405000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10606+ | 2.12 грн |
MUN2237T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 389700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.12 грн |
MUN2234T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10969+ | 2.12 грн |
MUN2231T1 |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.12 грн |
MUN2241T1 |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 100 kOhms
на замовлення 80975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.12 грн |
MUN2212T1 |
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Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
4N38 |
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Виробник: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
товар відсутній
NTMFS7D5N15MC |
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Виробник: onsemi
Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
товар відсутній
NTMFS7D5N15MC |
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Виробник: onsemi
Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
Description: PTNG 150V 7.4MOHM, POWERCLIP56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 54A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 295µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3835 pF @ 75 V
товар відсутній
LM2575D2T-015 |
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Виробник: onsemi
Description: IC REG BUCK 15V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
Description: IC REG BUCK 15V 1A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
товар відсутній
NVMFS4C01NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 158.89 грн |
NVMFS4C01NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 306.83 грн |
10+ | 248.49 грн |
100+ | 201.02 грн |
500+ | 167.69 грн |
MICROFC-30050-SMT-TR1 |
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Виробник: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Strip
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Strip
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3772.38 грн |
MMBF4091 |
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Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
товар відсутній
NCP1280DR2 |
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Виробник: onsemi
Description: IC OFFLINE SW MULT TOP 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 62%, 80%
Frequency - Switching: 150kHz ~ 300kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Forward, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Voltage
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start
Description: IC OFFLINE SW MULT TOP 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 62%, 80%
Frequency - Switching: 150kHz ~ 300kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Forward, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Voltage
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
398+ | 52.72 грн |
CAT524WI-T2 |
Виробник: onsemi
Description: IC POT DIGIT 4CH 8BIT BUF 14SOIC
Resistance (Ohms): 24k
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 256
Voltage - Supply: 2.7V ~ 5.5V
Supplier Device Package: 14-SOIC
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: IC POT DIGIT 4CH 8BIT BUF 14SOIC
Resistance (Ohms): 24k
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 256
Voltage - Supply: 2.7V ~ 5.5V
Supplier Device Package: 14-SOIC
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
товар відсутній
SB350 |
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Виробник: onsemi
Description: SCHOTTKY DO201 50V 3A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: SCHOTTKY DO201 50V 3A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SB350 |
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Виробник: onsemi
Description: SCHOTTKY DO201 50V 3A 150C
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: SCHOTTKY DO201 50V 3A 150C
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
CAT5251WI-00 |
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Виробник: onsemi
Description: CAT5251 - QUAD DIGITALLY PROGRAM
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 256
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-SOIC
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): ±300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: CAT5251 - QUAD DIGITALLY PROGRAM
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 256
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-SOIC
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): ±300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
на замовлення 987 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
57+ | 371.99 грн |
DF005M |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 50V 1.5A 4DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1.5A 4DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 2657 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.71 грн |
50+ | 32.51 грн |
100+ | 23.59 грн |
500+ | 18.5 грн |
1000+ | 15.74 грн |
2000+ | 14.02 грн |
SB10-05A2-AT1 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
товар відсутній
SB10-05A3 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
товар відсутній
SB10-05A2 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
товар відсутній
SB10-05A3-BT |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
товар відсутній
FDS8878-G |
Виробник: onsemi
Description: MOSFET N-CH 30V 10.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 15 V
Description: MOSFET N-CH 30V 10.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 15 V
товар відсутній
NTTFS6H888NTAG |
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Виробник: onsemi
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
товар відсутній
NTTFS6H888NTAG |
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Виробник: onsemi
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
товар відсутній
NVTFS6H888NWFTAG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVTFS6H888NWFTAG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
MJD340T4 |
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Виробник: onsemi
Description: TRANS PWR NPN 0.5A 300V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS PWR NPN 0.5A 300V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
товар відсутній
NVMYS022N06CTWG |
Виробник: onsemi
Description: T6 60V SL LFPAK4 5X6
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Description: T6 60V SL LFPAK4 5X6
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
товар відсутній
NSVBAS16TT1G |
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Виробник: onsemi
Description: DIODE GP 100V 200MA SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GP 100V 200MA SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.47 грн |
6000+ | 7.82 грн |
9000+ | 7.04 грн |
30000+ | 6.51 грн |
75000+ | 6.11 грн |
NSVBAS16TT1G |
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Виробник: onsemi
Description: DIODE GP 100V 200MA SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GP 100V 200MA SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 129971 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.66 грн |
13+ | 23.45 грн |
100+ | 14.08 грн |
500+ | 12.23 грн |
1000+ | 8.32 грн |
FDD8424H-F085A |
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Виробник: onsemi
Description: MOSFET N/P-CH 40V 9A/6.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Description: MOSFET N/P-CH 40V 9A/6.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
товар відсутній
FDD8424H-F085A |
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Виробник: onsemi
Description: MOSFET N/P-CH 40V 9A/6.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Description: MOSFET N/P-CH 40V 9A/6.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
товар відсутній
MC74VHC1GT08DFT1G |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
MC74VHC1GT08DFT1G |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
MC74VHC1GT08DFT1G-Q |
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Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE, TTL LEV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: SINGLE 2-INPUT AND GATE, TTL LEV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.91 грн |
6000+ | 3.28 грн |
15000+ | 2.78 грн |
30000+ | 2.46 грн |
75000+ | 2.31 грн |
MC74VHC1GT08DFT1G-Q |
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Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE, TTL LEV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: SINGLE 2-INPUT AND GATE, TTL LEV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.62 грн |
17+ | 17.64 грн |
25+ | 14.75 грн |
100+ | 7.68 грн |
250+ | 6.76 грн |
500+ | 5.76 грн |
1000+ | 3.86 грн |
MC74VHC1GT08DFT2G-Q |
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Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE, TTL LEV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: SINGLE 2-INPUT AND GATE, TTL LEV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1V ~ 2V
Input Logic Level - Low: 0.28V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 189000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.91 грн |
6000+ | 3.28 грн |
15000+ | 2.78 грн |
30000+ | 2.46 грн |
75000+ | 2.31 грн |
150000+ | 2 грн |