| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PSMN7R0-30YLC,115 | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1481 шт: термін постачання 21-30 дні (днів) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 14.7mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1459 шт: термін постачання 21-30 дні (днів) |
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| PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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PSMN7R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 389A Power dissipation: 149W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 38.7nC Kind of package: reel; tape Kind of channel: enhanced |
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PSMN7R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 92A Pulsed drain current: 389A Power dissipation: 149W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhanced |
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| PSMNR70-30YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A Type of transistor: N-MOSFET Power dissipation: 268W Polarisation: unipolar Kind of package: reel; tape Gate charge: 157nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1589A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 30V Drain current: 281A On-state resistance: 2mΩ |
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| PSMN027-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W Power dissipation: 103W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 148A Mounting: SMD Case: D2PAK; SOT404 Drain-source voltage: 100V Drain current: 37A On-state resistance: 59mΩ Type of transistor: N-MOSFET |
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PSMN0R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W Case: LFPAK56E; PowerSO8; SOT1023 Mounting: SMD On-state resistance: 1.47mΩ Kind of package: reel; tape Power dissipation: 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 235A Gate charge: 110.2nC Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±20V |
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| PSMN1R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 152A Pulsed drain current: 860A Power dissipation: 135W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.11mΩ Mounting: SMD Gate charge: 46.7nC Kind of package: reel; tape Kind of channel: enhanced |
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| PESD4V0Z1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 4V Breakdown voltage: 6.9V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
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| PESD3V6Z1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.6V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
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PTVS5V5D1BLYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.6÷7.6V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 5.6...7.6V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
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PZTA14-QX | NEXPERIA |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 1.25W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 1.25W Case: SC73; SOT223 Pulsed collector current: 0.8A Current gain: 20000 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
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NSF040120L3A0Q | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W Mounting: THT Kind of package: tube Power dissipation: 313W Polarisation: unipolar Gate charge: 95nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -10...22V Pulsed drain current: 160A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 60mΩ Type of transistor: N-MOSFET |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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BCW68GR | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
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| PCA9555PWJ | NEXPERIA |
Category: Interfaces others - integrated circuits Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD Type of integrated circuit: interface Kind of integrated circuit: 16bit; I/O expander Supply voltage: 2.3...5.5V DC Interface: I2C; SMBus Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C |
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BAS70-06W,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Case: SOT323 Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape |
на замовлення 6187 шт: термін постачання 21-30 дні (днів) |
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BZX84J-B3V9,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.55W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode |
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BZX84J-C3V9,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.55W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode |
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PMN50EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
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| PMPB30XPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A Mounting: SMD Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 19nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
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PMT200EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 15.9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9.7A Drain-source voltage: -70V Drain current: -1.5A On-state resistance: 0.25Ω Type of transistor: P-MOSFET Polarisation: unipolar |
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74HCT126D,652 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -40...125°C Kind of package: tube Kind of output: 3-state |
на замовлення 107 шт: термін постачання 21-30 дні (днів) |
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74HCT126D,653 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state |
на замовлення 2539 шт: термін постачання 21-30 дні (днів) |
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| 74HCT238BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: TTL Mounting: SMD Case: DHVQFN16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...125°C |
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74HCT238D,653 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...125°C Quiescent current: 160µA |
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| 74HCT238PW,118 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: TTL Mounting: SMD Case: TSSOP16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...125°C |
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| 74HCT241PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Kind of package: reel; tape |
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74HCT280D,653 | NEXPERIA |
Category: Other logic integrated circuits Description: IC: digital; 9bit,parity checker/generator; CMOS,TTL; 4.5÷5.5VDC Mounting: SMD Operating temperature: -40...125°C Case: SO14 Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 9bit; parity checker/generator Family: HCT Type of integrated circuit: digital Supply voltage: 4.5...5.5V DC |
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| 74AUP2G132GS,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; CMOS; SMD; XSON8; Mini Logic; 800mVDC÷3.6VDC Type of integrated circuit: digital Kind of gate: NAND Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
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| 74AUP2G132GXX | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; CMOS; SMD; X2SON8; 800mVDC÷3.6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Technology: CMOS Mounting: SMD Case: X2SON8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
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| 74LVCH1T45GW-Q100H | NEXPERIA |
Category: Level translators Description: IC: digital; 1bit,bidirectional,transceiver,translator; CMOS Type of integrated circuit: digital Kind of integrated circuit: 1bit; bidirectional; transceiver; translator Technology: CMOS Mounting: SMD Case: TSSOP6 Supply voltage: 1.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Family: LVCH |
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| BZX84-C8V2.215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
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| 74LVC2G86GT,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA Kind of package: reel; tape Operating temperature: -40...125°C Manufacturer series: Mini Logic Delay time: 12.4ns Quiescent current: 4µA Number of channels: dual; 2 Type of integrated circuit: digital Number of inputs: 2 Kind of gate: XOR Case: XSON8 Mounting: SMD Technology: CMOS; TTL Family: LVC Supply voltage: 1.65...5.5V DC |
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| 74LVC86ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Delay time: 11.4ns Family: LVC |
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PMEG6010CEH.115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.66V Max. forward impulse current: 9A Kind of package: reel; tape |
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| 74LVT16374ADGG,118 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 16; TTL; SMD; TSSOP48; reel,tape; LVT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 16 Technology: TTL Mounting: SMD Case: TSSOP48 Supply voltage: 2.7...3.6V DC Operating temperature: -40...80°C Kind of output: 3-state Kind of package: reel; tape Family: LVT Trigger: positive-edge-triggered |
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| 74LVC16245ADGG,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; bus transceiver; Ch: 16; CMOS,TTL; SMD; TSSOP48; LVC Type of integrated circuit: digital Kind of integrated circuit: bus transceiver Number of channels: 16 Technology: CMOS; TTL Mounting: SMD Case: TSSOP48 Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Family: LVC Integrated circuit features: 5V tolerant on inputs/outputs |
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| 74LVC1G66GS,132 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; switch; IN: 2; CMOS; SMD; XSON6; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of integrated circuit: switch Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Family: LVC Kind of package: reel; tape Operating temperature: -40...125°C |
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| 74AUP3G17GSX | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 3; CMOS; SMD; XSON8; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 3 Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
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| BUK7212-55B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK Kind of package: reel; tape On-state resistance: 25mΩ Drain current: 59A Drain-source voltage: 55V Case: DPAK Gate charge: 35nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 335A Application: automotive industry Power dissipation: 167W Polarisation: unipolar |
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| BUK7214-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK Kind of package: reel; tape On-state resistance: 14mΩ Drain current: 49A Drain-source voltage: 75V Case: DPAK Gate charge: 41nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 276A Application: automotive industry Power dissipation: 158W Polarisation: unipolar |
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| BUK7230-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK Kind of package: reel; tape On-state resistance: 60mΩ Drain current: 27A Drain-source voltage: 55V Case: DPAK Gate charge: 24nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 150A Application: automotive industry Power dissipation: 88W Polarisation: unipolar |
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| BUK7613-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Kind of package: reel; tape On-state resistance: 28.2mΩ Drain current: 41A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 22.9nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 234A Application: automotive industry Power dissipation: 96W Polarisation: unipolar |
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| BUK762R4-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W Kind of package: reel; tape On-state resistance: 5.2mΩ Drain current: 120A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 158nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 1036A Application: automotive industry Power dissipation: 349W Polarisation: unipolar |
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| BUK763R1-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W Kind of package: reel; tape On-state resistance: 6.7mΩ Drain current: 120A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 114nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 834A Application: automotive industry Power dissipation: 293W Polarisation: unipolar |
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BUK763R8-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W Kind of package: reel; tape On-state resistance: 9.2mΩ Drain current: 120A Drain-source voltage: 80V Case: D2PAK; SOT404 Gate charge: 169nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 778A Application: automotive industry Power dissipation: 349W Polarisation: unipolar |
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| BUK764R2-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W Kind of package: reel; tape On-state resistance: 10.2mΩ Drain current: 120A Drain-source voltage: 80V Case: D2PAK; SOT404 Gate charge: 136nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 713A Application: automotive industry Power dissipation: 324W Polarisation: unipolar |
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| BUK764R4-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W Kind of package: reel; tape On-state resistance: 9.8mΩ Drain current: 100A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 82nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 620A Application: automotive industry Power dissipation: 234W Polarisation: unipolar |
товар відсутній |
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| BUK768R3-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W Kind of package: reel; tape On-state resistance: 18mΩ Drain current: 61.5A Drain-source voltage: 60V Case: D2PAK; SOT404 Gate charge: 43.1nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 349A Application: automotive industry Power dissipation: 137W Polarisation: unipolar |
товар відсутній |
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| BUK7D25-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 76A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 On-state resistance: 46mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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| BUK7D36-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 76mΩ Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 56A |
товар відсутній |
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| BUK7E3R5-60E,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 785A Power dissipation: 293W Case: I2PAK; SOT226 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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| BUK7J1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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| BUK7K12-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 228A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.8mΩ Mounting: SMD Gate charge: 34.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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| BUK7K13-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 213A Power dissipation: 64W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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| BUK7K134-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.9A Pulsed drain current: 39A Power dissipation: 32W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 335mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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|
BC858W,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 125...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товар відсутній |
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 |
BC54PA,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 1.65W; DFN2020-3,SOT1061 Mounting: SMD Power dissipation: 1.65W Polarisation: bipolar Kind of package: reel; tape Case: DFN2020-3; SOT1061 Collector-emitter voltage: 45V Current gain: 40...250 Collector current: 1A Type of transistor: NPN |
на замовлення 1360 шт: термін постачання 21-30 дні (днів) |
|
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 |
BC53-10PA,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061 Mounting: SMD Polarisation: bipolar Kind of package: reel; tape Case: DFN2020-3; SOT1061 Frequency: 145MHz Collector-emitter voltage: 80V Current gain: 63...160 Collector current: 1A Type of transistor: PNP |
на замовлення 2994 шт: термін постачання 21-30 дні (днів) |
|
| PSMN7R0-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1481 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.49 грн |
| 10+ | 38.24 грн |
| 25+ | 34.4 грн |
| 32+ | 27.08 грн |
| 86+ | 25.64 грн |
| PSMN7R0-60YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1459 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.29 грн |
| 5+ | 85.45 грн |
| 14+ | 63.73 грн |
| 37+ | 60.11 грн |
| 500+ | 57.21 грн |
| PSMN7R5-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| PSMN7R6-60BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PSMN7R6-60PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| PSMNR70-30YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Power dissipation: 268W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 157nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1589A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
Drain current: 281A
On-state resistance: 2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Power dissipation: 268W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 157nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1589A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
Drain current: 281A
On-state resistance: 2mΩ
товар відсутній
| PSMN027-100BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Power dissipation: 103W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 148A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 37A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Power dissipation: 103W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 148A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 37A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
товар відсутній
| PSMN0R7-25YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 1.47mΩ
Kind of package: reel; tape
Power dissipation: 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 235A
Gate charge: 110.2nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 1.47mΩ
Kind of package: reel; tape
Power dissipation: 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 235A
Gate charge: 110.2nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| PSMN1R7-25YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PESD4V0Z1BSFYL |
|
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.9V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.9V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
товар відсутній
| PESD3V6Z1BCSFYL |
|
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
товар відсутній
| PTVS5V5D1BLYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.6÷7.6V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 5.6...7.6V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.6÷7.6V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 5.6...7.6V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
товар відсутній
| PZTA14-QX |
Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 1.25W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC73; SOT223
Pulsed collector current: 0.8A
Current gain: 20000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 1.25W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC73; SOT223
Pulsed collector current: 0.8A
Current gain: 20000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
товар відсутній
| NSF040120L3A0Q |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
Mounting: THT
Kind of package: tube
Power dissipation: 313W
Polarisation: unipolar
Gate charge: 95nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
Mounting: THT
Kind of package: tube
Power dissipation: 313W
Polarisation: unipolar
Gate charge: 95nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1321.92 грн |
| 2+ | 1160.87 грн |
| 3+ | 1160.14 грн |
| BCW68GR |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
товар відсутній
| PCA9555PWJ |
|
Виробник: NEXPERIA
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
товар відсутній
| BAS70-06W,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
на замовлення 6187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.38 грн |
| 37+ | 9.92 грн |
| 100+ | 4.79 грн |
| 386+ | 2.17 грн |
| 1062+ | 2.06 грн |
| 3000+ | 2.01 грн |
| 6000+ | 1.98 грн |
| BZX84J-B3V9,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
товар відсутній
| BZX84J-C3V9,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
товар відсутній
| PMN50EPEX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
товар відсутній
| PMPB30XPEX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
товар відсутній
| PMT200EPEX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
товар відсутній
| 74HCT126D,652 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: 3-state
на замовлення 107 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.75 грн |
| 25+ | 17.24 грн |
| 58+ | 14.63 грн |
| 74HCT126D,653 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
на замовлення 2539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.42 грн |
| 16+ | 23.54 грн |
| 50+ | 19.63 грн |
| 85+ | 9.92 грн |
| 233+ | 9.41 грн |
| 74HCT238BQ,115 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: DHVQFN16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: DHVQFN16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
товар відсутній
| 74HCT238D,653 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 160µA
товар відсутній
| 74HCT238PW,118 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
товар відсутній
| 74HCT241PW,118 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: reel; tape
товар відсутній
| 74HCT280D,653 |
|
Виробник: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; 9bit,parity checker/generator; CMOS,TTL; 4.5÷5.5VDC
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 9bit; parity checker/generator
Family: HCT
Type of integrated circuit: digital
Supply voltage: 4.5...5.5V DC
Category: Other logic integrated circuits
Description: IC: digital; 9bit,parity checker/generator; CMOS,TTL; 4.5÷5.5VDC
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 9bit; parity checker/generator
Family: HCT
Type of integrated circuit: digital
Supply voltage: 4.5...5.5V DC
товар відсутній
| 74AUP2G132GS,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; XSON8; Mini Logic; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; XSON8; Mini Logic; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| 74AUP2G132GXX |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; X2SON8; 800mVDC÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: X2SON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; X2SON8; 800mVDC÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: X2SON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| 74LVCH1T45GW-Q100H |
|
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
товар відсутній
| BZX84-C8V2.215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
товар відсутній
| 74LVC2G86GT,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Delay time: 12.4ns
Quiescent current: 4µA
Number of channels: dual; 2
Type of integrated circuit: digital
Number of inputs: 2
Kind of gate: XOR
Case: XSON8
Mounting: SMD
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Delay time: 12.4ns
Quiescent current: 4µA
Number of channels: dual; 2
Type of integrated circuit: digital
Number of inputs: 2
Kind of gate: XOR
Case: XSON8
Mounting: SMD
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
товар відсутній
| 74LVC86ABQ,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 11.4ns
Family: LVC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 11.4ns
Family: LVC
товар відсутній
| PMEG6010CEH.115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
товар відсутній
| 74LVT16374ADGG,118 |
|
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 16; TTL; SMD; TSSOP48; reel,tape; LVT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 16
Technology: TTL
Mounting: SMD
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...80°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 16; TTL; SMD; TSSOP48; reel,tape; LVT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 16
Technology: TTL
Mounting: SMD
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...80°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
Trigger: positive-edge-triggered
товар відсутній
| 74LVC16245ADGG,118 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 16; CMOS,TTL; SMD; TSSOP48; LVC
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver
Number of channels: 16
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP48
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 16; CMOS,TTL; SMD; TSSOP48; LVC
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver
Number of channels: 16
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP48
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Integrated circuit features: 5V tolerant on inputs/outputs
товар відсутній
| 74LVC1G66GS,132 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; switch; IN: 2; CMOS; SMD; XSON6; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: switch
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Family: LVC
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; switch; IN: 2; CMOS; SMD; XSON6; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: switch
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Family: LVC
Kind of package: reel; tape
Operating temperature: -40...125°C
товар відсутній
| 74AUP3G17GSX |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 3; CMOS; SMD; XSON8; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 3; CMOS; SMD; XSON8; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
товар відсутній
| BUK7212-55B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Kind of package: reel; tape
On-state resistance: 25mΩ
Drain current: 59A
Drain-source voltage: 55V
Case: DPAK
Gate charge: 35nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 335A
Application: automotive industry
Power dissipation: 167W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Kind of package: reel; tape
On-state resistance: 25mΩ
Drain current: 59A
Drain-source voltage: 55V
Case: DPAK
Gate charge: 35nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 335A
Application: automotive industry
Power dissipation: 167W
Polarisation: unipolar
товар відсутній
| BUK7214-75B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Kind of package: reel; tape
On-state resistance: 14mΩ
Drain current: 49A
Drain-source voltage: 75V
Case: DPAK
Gate charge: 41nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 276A
Application: automotive industry
Power dissipation: 158W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Kind of package: reel; tape
On-state resistance: 14mΩ
Drain current: 49A
Drain-source voltage: 75V
Case: DPAK
Gate charge: 41nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 276A
Application: automotive industry
Power dissipation: 158W
Polarisation: unipolar
товар відсутній
| BUK7230-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Kind of package: reel; tape
On-state resistance: 60mΩ
Drain current: 27A
Drain-source voltage: 55V
Case: DPAK
Gate charge: 24nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 150A
Application: automotive industry
Power dissipation: 88W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Kind of package: reel; tape
On-state resistance: 60mΩ
Drain current: 27A
Drain-source voltage: 55V
Case: DPAK
Gate charge: 24nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 150A
Application: automotive industry
Power dissipation: 88W
Polarisation: unipolar
товар відсутній
| BUK7613-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Kind of package: reel; tape
On-state resistance: 28.2mΩ
Drain current: 41A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 22.9nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 234A
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Kind of package: reel; tape
On-state resistance: 28.2mΩ
Drain current: 41A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 22.9nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 234A
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
товар відсутній
| BUK762R4-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W
Kind of package: reel; tape
On-state resistance: 5.2mΩ
Drain current: 120A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 158nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 1036A
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W
Kind of package: reel; tape
On-state resistance: 5.2mΩ
Drain current: 120A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 158nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 1036A
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
товар відсутній
| BUK763R1-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W
Kind of package: reel; tape
On-state resistance: 6.7mΩ
Drain current: 120A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 114nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 834A
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W
Kind of package: reel; tape
On-state resistance: 6.7mΩ
Drain current: 120A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 114nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 834A
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
товар відсутній
| BUK763R8-80E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Kind of package: reel; tape
On-state resistance: 9.2mΩ
Drain current: 120A
Drain-source voltage: 80V
Case: D2PAK; SOT404
Gate charge: 169nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 778A
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Kind of package: reel; tape
On-state resistance: 9.2mΩ
Drain current: 120A
Drain-source voltage: 80V
Case: D2PAK; SOT404
Gate charge: 169nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 778A
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
товар відсутній
| BUK764R2-80E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Kind of package: reel; tape
On-state resistance: 10.2mΩ
Drain current: 120A
Drain-source voltage: 80V
Case: D2PAK; SOT404
Gate charge: 136nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 713A
Application: automotive industry
Power dissipation: 324W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Kind of package: reel; tape
On-state resistance: 10.2mΩ
Drain current: 120A
Drain-source voltage: 80V
Case: D2PAK; SOT404
Gate charge: 136nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 713A
Application: automotive industry
Power dissipation: 324W
Polarisation: unipolar
товар відсутній
| BUK764R4-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Kind of package: reel; tape
On-state resistance: 9.8mΩ
Drain current: 100A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 82nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 620A
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Kind of package: reel; tape
On-state resistance: 9.8mΩ
Drain current: 100A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 82nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 620A
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
товар відсутній
| BUK768R3-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W
Kind of package: reel; tape
On-state resistance: 18mΩ
Drain current: 61.5A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 43.1nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 349A
Application: automotive industry
Power dissipation: 137W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W
Kind of package: reel; tape
On-state resistance: 18mΩ
Drain current: 61.5A
Drain-source voltage: 60V
Case: D2PAK; SOT404
Gate charge: 43.1nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 349A
Application: automotive industry
Power dissipation: 137W
Polarisation: unipolar
товар відсутній
| BUK7D25-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7D36-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Mounting: SMD
Case: DFN6; SOT1220
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 56A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Mounting: SMD
Case: DFN6; SOT1220
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 56A
товар відсутній
| BUK7E3R5-60E,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 785A
Power dissipation: 293W
Case: I2PAK; SOT226
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 785A
Power dissipation: 293W
Case: I2PAK; SOT226
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7J1R4-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7K12-60EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 228A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.8mΩ
Mounting: SMD
Gate charge: 34.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 228A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.8mΩ
Mounting: SMD
Gate charge: 34.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7K13-60EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 213A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 213A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7K134-100EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BC858W,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 125...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 125...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| BC54PA,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.65W; DFN2020-3,SOT1061
Mounting: SMD
Power dissipation: 1.65W
Polarisation: bipolar
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Collector-emitter voltage: 45V
Current gain: 40...250
Collector current: 1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.65W; DFN2020-3,SOT1061
Mounting: SMD
Power dissipation: 1.65W
Polarisation: bipolar
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Collector-emitter voltage: 45V
Current gain: 40...250
Collector current: 1A
Type of transistor: NPN
на замовлення 1360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.06 грн |
| 25+ | 14.85 грн |
| 31+ | 11.73 грн |
| 100+ | 7.82 грн |
| 133+ | 6.37 грн |
| 364+ | 6.01 грн |
| 500+ | 5.79 грн |
| BC53-10PA,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Frequency: 145MHz
Collector-emitter voltage: 80V
Current gain: 63...160
Collector current: 1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Frequency: 145MHz
Collector-emitter voltage: 80V
Current gain: 63...160
Collector current: 1A
Type of transistor: PNP
на замовлення 2994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.39 грн |
| 45+ | 8.18 грн |
| 100+ | 7.46 грн |
| 150+ | 5.64 грн |
| 415+ | 5.33 грн |