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PESD2IVN-UX PESD2IVN-UX Nexperia USA Inc. PESD2IVN-U.pdf Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+6.56 грн
6000+ 6.18 грн
9000+ 5.47 грн
Мінімальне замовлення: 3000
PESD2USB30Z PESD2USB30Z Nexperia USA Inc. PESDXUSB30_SER.pdf Description: TVS DIODE 5.5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товар відсутній
PESD3USB30Z PESD3USB30Z Nexperia USA Inc. PESDxUSB30.pdf Description: TVS DIODE 5.5V 15WLCSP
товар відсутній
PESD3V3C1BSFYL PESD3V3C1BSFYL Nexperia USA Inc. PESD3V3C1BSF.pdf Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
9000+4.69 грн
27000+ 4.43 грн
Мінімальне замовлення: 9000
PESD3V3X1BCSFYL PESD3V3X1BCSFYL Nexperia USA Inc. PESD3V3X1BCSF.pdf Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
товар відсутній
PESD5V0H1BSFYL PESD5V0H1BSFYL Nexperia USA Inc. PESD5V0H1BSF.pdf Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
9000+3.83 грн
Мінімальне замовлення: 9000
PESD5V0V2BMBYL PESD5V0V2BMBYL Nexperia USA Inc. PESD5V0V2BMB.pdf Description: TVS DIODE 5VWM 12.5VC DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006B-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PESD5V0V2BMYL PESD5V0V2BMYL Nexperia USA Inc. PESD5V0V2BM.pdf Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+3.15 грн
Мінімальне замовлення: 10000
PESD5V0X1BCSFYL PESD5V0X1BCSFYL Nexperia USA Inc. PESD5V0X1BCSF.pdf Description: TVS DIODE 5VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
9000+2.38 грн
27000+ 2.25 грн
Мінімальне замовлення: 9000
PMBT2222AYSX PMBT2222AYSX Nexperia USA Inc. PMBT2222AYS.pdf Description: TRANS NPN 40V 0.6A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.5 грн
Мінімальне замовлення: 3000
PMBT2907AYSX PMBT2907AYSX Nexperia USA Inc. PMBT2907AYS.pdf Description: TRANS PNP 60V 0.6A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
товар відсутній
PMBT4401YSX PMBT4401YSX Nexperia USA Inc. PMBT4401YS.pdf Description: TRANS NPN 40V 0.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.81 грн
Мінімальне замовлення: 3000
PMCM4401VNEAZ PMCM4401VNEAZ Nexperia USA Inc. PMCM4401VNE.pdf Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
9000+7.04 грн
27000+ 6.68 грн
63000+ 6.28 грн
Мінімальне замовлення: 9000
PMCM4401VPEZ PMCM4401VPEZ Nexperia USA Inc. PMCM4401VPE.pdf Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
9000+7.04 грн
Мінімальне замовлення: 9000
PMDPB56XNEAX PMDPB56XNEAX Nexperia USA Inc. PMDPB56XNEA.pdf Description: MOSFET 2N-CH 30V 3.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020D-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+8.86 грн
Мінімальне замовлення: 3000
PMEG050T150EPDZ PMEG050T150EPDZ Nexperia USA Inc. PMEG050T150EPD.pdf Description: DIODE SCHOTTKY 50V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
1500+25.64 грн
Мінімальне замовлення: 1500
PMEG100V080ELPDZ PMEG100V080ELPDZ Nexperia USA Inc. PMEG100V080ELPD.pdf Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
1500+20.09 грн
3000+ 17.23 грн
7500+ 16.33 грн
10500+ 14.19 грн
Мінімальне замовлення: 1500
PMEG100V100ELPDZ PMEG100V100ELPDZ Nexperia USA Inc. PMEG100V100ELPD.pdf Description: DIODE SCHOTTKY 100V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+23.66 грн
Мінімальне замовлення: 1500
PMEG3010AESBZ PMEG3010AESBZ Nexperia USA Inc. PMEG3010AESB.pdf Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 30 V
товар відсутній
PMEG3010ESBZ PMEG3010ESBZ Nexperia USA Inc. PMEG3010ESB.pdf Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
товар відсутній
PMEG4010AESBZ PMEG4010AESBZ Nexperia USA Inc. PMEG4010AESB.pdf Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
товар відсутній
PMEG4010ESBYL PMEG4010ESBYL Nexperia USA Inc. PMEG4010ESB.pdf Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товар відсутній
PMEG4010ESBZ PMEG4010ESBZ Nexperia USA Inc. PMEG4010ESB.pdf Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товар відсутній
PMEG45T15EPDAZ PMEG45T15EPDAZ Nexperia USA Inc. PMEG45T15EPD.pdf Description: DIODE SCHOTTKY 45V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+27.8 грн
Мінімальне замовлення: 1500
PMEG6010AESBYL PMEG6010AESBYL Nexperia USA Inc. PMEG6010AESB.pdf Description: DIODE SCHOTTKY 60V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+4.28 грн
Мінімальне замовлення: 10000
PMF250XNEX PMF250XNEX Nexperia USA Inc. PMF250XNE.pdf Description: MOSFET N-CH 30V 1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
3000+4.08 грн
6000+ 3.65 грн
9000+ 3.02 грн
30000+ 2.79 грн
75000+ 2.5 грн
Мінімальне замовлення: 3000
PMF63UNEX PMF63UNEX Nexperia USA Inc. PMF63UNE.pdf Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
на замовлення 369000 шт:
термін постачання 21-31 дні (днів)
3000+4.69 грн
6000+ 4.44 грн
Мінімальне замовлення: 3000
PMGD175XNEX PMGD175XNEX Nexperia USA Inc. PMGD175XNE.pdf Description: MOSFET 2N-CH 30V 870MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+7.78 грн
6000+ 7.18 грн
Мінімальне замовлення: 3000
PMN16XNEX PMN16XNEX Nexperia USA Inc. PMN16XNE.pdf Description: MOSFET N-CH 20V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+6.73 грн
6000+ 6.21 грн
9000+ 5.59 грн
Мінімальне замовлення: 3000
PMN27UPH PMN27UPH Nexperia USA Inc. PMN27UP.pdf Description: MOSFET P-CH 20V 5.7A 6TSOP
товар відсутній
PMN30UNEX PMN30UNEX Nexperia USA Inc. PMN30UNE.pdf Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
товар відсутній
PMN30UNX PMN30UNX Nexperia USA Inc. PMN30UN.pdf Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+4.23 грн
6000+ 4 грн
Мінімальне замовлення: 3000
PMN30XPX PMN30XPX Nexperia USA Inc. PMN30XP.pdf Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
3000+8.63 грн
6000+ 7.96 грн
9000+ 7.17 грн
30000+ 6.62 грн
75000+ 6.35 грн
Мінімальне замовлення: 3000
PMN40UPEAX PMN40UPEAX Nexperia USA Inc. PMN40UPE.pdf Description: MOSFET P-CH 20V 4.7A 6TSOP
товар відсутній
PMN52XPX PMN52XPX Nexperia USA Inc. PMN52XP.pdf Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.45 грн
Мінімальне замовлення: 3000
PMN70XPEAX PMN70XPEAX Nexperia USA Inc. PMN70XPE.pdf Description: MOSFET P-CH 20V 3.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
товар відсутній
PMPB10XNEZ PMPB10XNEZ Nexperia USA Inc. PMPB10XNE.pdf Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+9.42 грн
Мінімальне замовлення: 3000
PMPB12UNEX PMPB12UNEX Nexperia USA Inc. PMPB12UNE.pdf Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.4 грн
Мінімальне замовлення: 3000
PMPB20XNEAX PMPB20XNEAX Nexperia USA Inc. PMPB20XNEA.pdf Description: MOSFET N-CH 20V 7.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Qualification: AEC-Q101
товар відсутній
PMV100ENEAR PMV100ENEAR Nexperia USA Inc. PMV100ENEA.pdf Description: MOSFET N-CH 30V 3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
PMV120ENEAR PMV120ENEAR Nexperia USA Inc. PMV120ENEA.pdf Description: MOSFET N-CH 60V 2.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
PMV30XPEAR PMV30XPEAR Nexperia USA Inc. PMV30XPEA.pdf Description: MOSFET P-CH 20V 4.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta), 5.435W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+8.18 грн
6000+ 7.55 грн
9000+ 6.8 грн
Мінімальне замовлення: 3000
PMV42ENER PMV42ENER Nexperia USA Inc. PMV42ENE.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+7.22 грн
6000+ 6.67 грн
9000+ 6 грн
Мінімальне замовлення: 3000
PMV450ENEAR PMV450ENEAR Nexperia USA Inc. PMV450ENEA.pdf Description: MOSFET N-CH 60V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 900mA, 10V
Power Dissipation (Max): 323mW (Ta), 554mW (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 101 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
3000+3.94 грн
6000+ 3.52 грн
9000+ 2.92 грн
30000+ 2.69 грн
Мінімальне замовлення: 3000
PMV65ENEAR PMV65ENEAR Nexperia USA Inc. PMV65ENEA.pdf Description: MOSFET N-CH 40V 2.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Power Dissipation (Max): 490mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.36 грн
Мінімальне замовлення: 3000
PMV65UNER PMV65UNER Nexperia USA Inc. PMV65UNE.pdf Description: MOSFET N-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
товар відсутній
PQMB11Z PQMB11Z Nexperia USA Inc. PQMB11.pdf Description: TRANS PREBIAS 2PNP DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PQMD13Z PQMD13Z Nexperia USA Inc. PQMD13.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMD16Z PQMD16Z Nexperia USA Inc. PQMD16.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMD3Z PQMD3Z Nexperia USA Inc. PQMD3.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMH10Z PQMH10Z Nexperia USA Inc. PQMH10.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMH11Z PQMH11Z Nexperia USA Inc. PQMH11.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
товар відсутній
PQMH13Z PQMH13Z Nexperia USA Inc. PQMH13.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
товар відсутній
PQMH9Z PQMH9Z Nexperia USA Inc. PQMH9.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PSMN010-80YLX PSMN010-80YLX Nexperia USA Inc. PSMN010-80YL.pdf Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+42.68 грн
3000+ 38.69 грн
Мінімальне замовлення: 1500
PSMN013-60YLX PSMN013-60YLX Nexperia USA Inc. PSMN013-60YL.pdf Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1500+25.23 грн
3000+ 21.64 грн
Мінімальне замовлення: 1500
PSMN014-80YLX PSMN014-80YLX Nexperia USA Inc. PSMN014-80YL.pdf Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+32.02 грн
3000+ 29.02 грн
Мінімальне замовлення: 1500
PSMN015-100YLX PSMN015-100YLX Nexperia USA Inc. PSMN015-100YL.pdf Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+42.7 грн
Мінімальне замовлення: 1500
PSMN019-100YLX PSMN019-100YLX Nexperia USA Inc. PSMN019-100YL.pdf Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+34.97 грн
Мінімальне замовлення: 1500
PSMN021-100YLX PSMN021-100YLX Nexperia USA Inc. PSMN021-100YL.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+32.72 грн
3000+ 29.66 грн
Мінімальне замовлення: 1500
PESD2IVN-UX PESD2IVN-U.pdf
PESD2IVN-UX
Виробник: Nexperia USA Inc.
Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.56 грн
6000+ 6.18 грн
9000+ 5.47 грн
Мінімальне замовлення: 3000
PESD2USB30Z PESDXUSB30_SER.pdf
PESD2USB30Z
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товар відсутній
PESD3USB30Z PESDxUSB30.pdf
PESD3USB30Z
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5V 15WLCSP
товар відсутній
PESD3V3C1BSFYL PESD3V3C1BSF.pdf
PESD3V3C1BSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+4.69 грн
27000+ 4.43 грн
Мінімальне замовлення: 9000
PESD3V3X1BCSFYL PESD3V3X1BCSF.pdf
PESD3V3X1BCSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
товар відсутній
PESD5V0H1BSFYL PESD5V0H1BSF.pdf
PESD5V0H1BSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+3.83 грн
Мінімальне замовлення: 9000
PESD5V0V2BMBYL PESD5V0V2BMB.pdf
PESD5V0V2BMBYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006B-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PESD5V0V2BMYL PESD5V0V2BM.pdf
PESD5V0V2BMYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+3.15 грн
Мінімальне замовлення: 10000
PESD5V0X1BCSFYL PESD5V0X1BCSF.pdf
PESD5V0X1BCSFYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5.5VC DSN0603-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+2.38 грн
27000+ 2.25 грн
Мінімальне замовлення: 9000
PMBT2222AYSX PMBT2222AYS.pdf
PMBT2222AYSX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.5 грн
Мінімальне замовлення: 3000
PMBT2907AYSX PMBT2907AYS.pdf
PMBT2907AYSX
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 0.6A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
товар відсутній
PMBT4401YSX PMBT4401YS.pdf
PMBT4401YSX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.81 грн
Мінімальне замовлення: 3000
PMCM4401VNEAZ PMCM4401VNE.pdf
PMCM4401VNEAZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+7.04 грн
27000+ 6.68 грн
63000+ 6.28 грн
Мінімальне замовлення: 9000
PMCM4401VPEZ PMCM4401VPE.pdf
PMCM4401VPEZ
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+7.04 грн
Мінімальне замовлення: 9000
PMDPB56XNEAX PMDPB56XNEA.pdf
PMDPB56XNEAX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020D-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.86 грн
Мінімальне замовлення: 3000
PMEG050T150EPDZ PMEG050T150EPD.pdf
PMEG050T150EPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+25.64 грн
Мінімальне замовлення: 1500
PMEG100V080ELPDZ PMEG100V080ELPD.pdf
PMEG100V080ELPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+20.09 грн
3000+ 17.23 грн
7500+ 16.33 грн
10500+ 14.19 грн
Мінімальне замовлення: 1500
PMEG100V100ELPDZ PMEG100V100ELPD.pdf
PMEG100V100ELPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+23.66 грн
Мінімальне замовлення: 1500
PMEG3010AESBZ PMEG3010AESB.pdf
PMEG3010AESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 30 V
товар відсутній
PMEG3010ESBZ PMEG3010ESB.pdf
PMEG3010ESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
товар відсутній
PMEG4010AESBZ PMEG4010AESB.pdf
PMEG4010AESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
товар відсутній
PMEG4010ESBYL PMEG4010ESB.pdf
PMEG4010ESBYL
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товар відсутній
PMEG4010ESBZ PMEG4010ESB.pdf
PMEG4010ESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товар відсутній
PMEG45T15EPDAZ PMEG45T15EPD.pdf
PMEG45T15EPDAZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+27.8 грн
Мінімальне замовлення: 1500
PMEG6010AESBYL PMEG6010AESB.pdf
PMEG6010AESBYL
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+4.28 грн
Мінімальне замовлення: 10000
PMF250XNEX PMF250XNE.pdf
PMF250XNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.08 грн
6000+ 3.65 грн
9000+ 3.02 грн
30000+ 2.79 грн
75000+ 2.5 грн
Мінімальне замовлення: 3000
PMF63UNEX PMF63UNE.pdf
PMF63UNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
на замовлення 369000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.69 грн
6000+ 4.44 грн
Мінімальне замовлення: 3000
PMGD175XNEX PMGD175XNE.pdf
PMGD175XNEX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 870MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.78 грн
6000+ 7.18 грн
Мінімальне замовлення: 3000
PMN16XNEX PMN16XNE.pdf
PMN16XNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.73 грн
6000+ 6.21 грн
9000+ 5.59 грн
Мінімальне замовлення: 3000
PMN27UPH PMN27UP.pdf
PMN27UPH
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.7A 6TSOP
товар відсутній
PMN30UNEX PMN30UNE.pdf
PMN30UNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
товар відсутній
PMN30UNX PMN30UN.pdf
PMN30UNX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.23 грн
6000+ 4 грн
Мінімальне замовлення: 3000
PMN30XPX PMN30XP.pdf
PMN30XPX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.63 грн
6000+ 7.96 грн
9000+ 7.17 грн
30000+ 6.62 грн
75000+ 6.35 грн
Мінімальне замовлення: 3000
PMN40UPEAX PMN40UPE.pdf
PMN40UPEAX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.7A 6TSOP
товар відсутній
PMN52XPX PMN52XP.pdf
PMN52XPX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.45 грн
Мінімальне замовлення: 3000
PMN70XPEAX PMN70XPE.pdf
PMN70XPEAX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
товар відсутній
PMPB10XNEZ PMPB10XNE.pdf
PMPB10XNEZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.42 грн
Мінімальне замовлення: 3000
PMPB12UNEX PMPB12UNE.pdf
PMPB12UNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.4 грн
Мінімальне замовлення: 3000
PMPB20XNEAX PMPB20XNEA.pdf
PMPB20XNEAX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Qualification: AEC-Q101
товар відсутній
PMV100ENEAR PMV100ENEA.pdf
PMV100ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
PMV120ENEAR PMV120ENEA.pdf
PMV120ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 2.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
PMV30XPEAR PMV30XPEA.pdf
PMV30XPEAR
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta), 5.435W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.18 грн
6000+ 7.55 грн
9000+ 6.8 грн
Мінімальне замовлення: 3000
PMV42ENER PMV42ENE.pdf
PMV42ENER
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.22 грн
6000+ 6.67 грн
9000+ 6 грн
Мінімальне замовлення: 3000
PMV450ENEAR PMV450ENEA.pdf
PMV450ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 900mA, 10V
Power Dissipation (Max): 323mW (Ta), 554mW (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 101 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.94 грн
6000+ 3.52 грн
9000+ 2.92 грн
30000+ 2.69 грн
Мінімальне замовлення: 3000
PMV65ENEAR PMV65ENEA.pdf
PMV65ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.7A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Power Dissipation (Max): 490mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.36 грн
Мінімальне замовлення: 3000
PMV65UNER PMV65UNE.pdf
PMV65UNER
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
товар відсутній
PQMB11Z PQMB11.pdf
PQMB11Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PQMD13Z PQMD13.pdf
PQMD13Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMD16Z PQMD16.pdf
PQMD16Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMD3Z PQMD3.pdf
PQMD3Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMH10Z PQMH10.pdf
PQMH10Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PQMH11Z PQMH11.pdf
PQMH11Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
товар відсутній
PQMH13Z PQMH13.pdf
PQMH13Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
товар відсутній
PQMH9Z PQMH9.pdf
PQMH9Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PSMN010-80YLX PSMN010-80YL.pdf
PSMN010-80YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+42.68 грн
3000+ 38.69 грн
Мінімальне замовлення: 1500
PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+25.23 грн
3000+ 21.64 грн
Мінімальне замовлення: 1500
PSMN014-80YLX PSMN014-80YL.pdf
PSMN014-80YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+32.02 грн
3000+ 29.02 грн
Мінімальне замовлення: 1500
PSMN015-100YLX PSMN015-100YL.pdf
PSMN015-100YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+42.7 грн
Мінімальне замовлення: 1500
PSMN019-100YLX PSMN019-100YL.pdf
PSMN019-100YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+34.97 грн
Мінімальне замовлення: 1500
PSMN021-100YLX PSMN021-100YL.pdf
PSMN021-100YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+32.72 грн
3000+ 29.66 грн
Мінімальне замовлення: 1500
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