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PMV42ENER Nexperia USA Inc.
![PMV42ENE.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.22 грн |
6000+ | 6.67 грн |
9000+ | 6 грн |
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Технічний опис PMV42ENER Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V, Power Dissipation (Max): 500mW (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V.
Інші пропозиції PMV42ENER за ціною від 5.37 грн до 30 грн
Фото | Назва | Виробник | Інформація |
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PMV42ENER | Виробник : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V Power Dissipation (Max): 500mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V |
на замовлення 12129 шт: термін постачання 21-31 дні (днів) |
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PMV42ENER | Виробник : Nexperia |
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на замовлення 76318 шт: термін постачання 21-30 дні (днів) |
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PMV42ENER | Виробник : NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.7A; Idm: 18A Mounting: SMD Case: SOT23; TO236AB Features of semiconductor devices: ESD protected gate Kind of package: reel; tape Technology: Trench Polarisation: unipolar Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Drain-source voltage: 30V Drain current: 2.7A On-state resistance: 57mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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PMV42ENER | Виробник : NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.7A; Idm: 18A Mounting: SMD Case: SOT23; TO236AB Features of semiconductor devices: ESD protected gate Kind of package: reel; tape Technology: Trench Polarisation: unipolar Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Drain-source voltage: 30V Drain current: 2.7A On-state resistance: 57mΩ Type of transistor: N-MOSFET |
товар відсутній |