PMV120ENEAR NEXPERIA
Виробник: NEXPERIADescription: NEXPERIA - PMV120ENEAR - Leistungs-MOSFET, n-Kanal, 60 V, 2.1 A, 0.096 ohm, TO-236AB, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 513mW
Bauform - Transistor: TO-236AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.096ohm
SVHC: No SVHC (23-Jan-2024)
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 23.14 грн |
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Технічний опис PMV120ENEAR NEXPERIA
Description: MOSFET N-CH 60V 2.1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V, Power Dissipation (Max): 513mW (Ta), 6.4W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції PMV120ENEAR за ціною від 5.99 грн до 30.25 грн
| Фото | Назва | Виробник | Інформація |
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PMV120ENEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 2.1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2197 шт: термін постачання 21-31 дні (днів) |
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PMV120ENEAR | Виробник : Nexperia |
MOSFET PMV120ENEA/SOT23/TO-236AB |
на замовлення 32876 шт: термін постачання 21-30 дні (днів) |
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PMV120ENEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; Idm: 8.3A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.3A Pulsed drain current: 8.3A Case: SOT23; TO236AB On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level кількість в упаковці: 1 шт |
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PMV120ENEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 2.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V Qualification: AEC-Q101 |
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PMV120ENEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; Idm: 8.3A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.3A Pulsed drain current: 8.3A Case: SOT23; TO236AB On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
товар відсутній |