Технічний опис IS46TR16128CL-125KBLA2 ISSI
Description: IC DRAM 2GBIT PARALLEL 96TWBGA, Packaging: Tray, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.283V ~ 1.45V, Technology: SDRAM - DDR3L, Clock Frequency: 800 MHz, Memory Format: DRAM, Supplier Device Package: 96-TWBGA (9x13), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 128M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS46TR16128CL-125KBLA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS46TR16128CL-125KBLA2 | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Operating temperature: -40...105°C Mounting: SMD Memory: 2Gb DRAM Case: TWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of package: in-tray; tube Kind of interface: parallel кількість в упаковці: 190 шт |
товар відсутній |
||
 |
IS46TR16128CL-125KBLA2 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
|
 |
IS46TR16128CL-125KBLA2 | Виробник : ISSI |
DRAM Automotive (Tc: -40 to +105C), 2G, 1.35V, DDR3, 128Mx16, 1600MT/s a. 11-11-11, 96 ball BGA (9mm x13mm) RoHS |
товар відсутній |
|
| IS46TR16128CL-125KBLA2 | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Operating temperature: -40...105°C Mounting: SMD Memory: 2Gb DRAM Case: TWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of package: in-tray; tube Kind of interface: parallel |
товар відсутній |