Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (138886) > Сторінка 718 з 2315
Фото | Назва | Виробник | Інформація |
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CY4609 | Infineon Technologies |
Description: EVAL BOARD HX3 USB HUB CYUSB3304 Packaging: Box Function: USB 3.0 Hub Type: Interface Contents: Board(s), Cable(s), Power Supply Utilized IC / Part: CYUSB3304 Supplied Contents: Board(s), Cable(s), Power Supply Primary Attributes: 4-Channel (Quad) Secondary Attributes: I2C Interface(s) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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TLE9140EQWXUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_IC Packaging: Tape & Reel (TR) Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: SPI Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 8V ~ 75V Technology: Power MOSFET Supplier Device Package: PG-TSDSO-32-1 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
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TLE9140EQWXUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_IC Packaging: Cut Tape (CT) Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: SPI Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 8V ~ 75V Technology: Power MOSFET Supplier Device Package: PG-TSDSO-32-1 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
на замовлення 912 шт: термін постачання 21-31 дні (днів) |
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TLE4973A025T5S0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Output: Analog Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 25mA Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4973A025T5S0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Output: Analog Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 25mA Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4973A050T5S0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Output: Analog Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 25mA Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
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TLE4973A050T5S0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Output: Analog Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 25mA Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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156739-1A | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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A2C01952000A | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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A2C0195200000A | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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111292 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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10324-08810 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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121877 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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1120204-00-A | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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10324-05530 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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16-3989-01 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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IR3859MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 9A 17QFN Packaging: Bulk Package / Case: 17-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 9A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 17-PQFN (4x5) Synchronous Rectifier: Yes Voltage - Output (Max): 18.9V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
на замовлення 2295 шт: термін постачання 21-31 дні (днів) |
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AUIRF1324 | Infineon Technologies |
Description: MOSFET N-CH 24V 195A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V |
на замовлення 7842 шт: термін постачання 21-31 дні (днів) |
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EVALTOLTDC36V2KWTOBO1 | Infineon Technologies |
Description: THREE-PHASE POWER INVERTER BOARD Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CY27410LTXI-002 | Infineon Technologies |
Description: IC SS CLOCK GENERATOR 48QFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML, HCSL, LVCMOS, LVDS, LVPECL Frequency - Max: 250MHz, 700MHz Type: Spread Spectrum Clock Generator Input: LVCMOS, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V Ratio - Input:Output: 3:12 Differential - Input:Output: Yes/Yes Supplier Device Package: 48-QFN (7x7) PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 |
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CY27410LTXI-013 | Infineon Technologies |
Description: IC SS CLOCK GENERATOR 48QFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML, HCSL, LVCMOS, LVDS, LVPECL Frequency - Max: 700MHz Type: Spread Spectrum Clock Generator Input: LVCMOS, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.46V Ratio - Input:Output: 3:12 Differential - Input:Output: Yes/Yes Supplier Device Package: 48-QFN (7x7) PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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CY7C1041CV33-12ZSXE | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
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IRGB4059DPBF | Infineon Technologies |
Description: IGBT 600V 8A 56W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Supplier Device Package: TO-220AB IGBT Type: Trench Td (on/off) @ 25°C: 25ns/65ns Switching Energy: 35µJ (on), 75µJ (off) Test Condition: 400V, 4A, 100Ohm, 15V Gate Charge: 9 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 16 A Power - Max: 56 W |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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IRGB4059DPBF | Infineon Technologies |
Description: IGBT 600V 8A 56W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Supplier Device Package: TO-220AB IGBT Type: Trench Td (on/off) @ 25°C: 25ns/65ns Switching Energy: 35µJ (on), 75µJ (off) Test Condition: 400V, 4A, 100Ohm, 15V Gate Charge: 9 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 16 A Power - Max: 56 W |
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CY9AF116MPMC-G-MNE1 | Infineon Technologies |
Description: IC MCU 32BIT 80LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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IPL65R1K5C6SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3A THIN-PAK Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 26.6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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KP229E3201XTMA1 | Infineon Technologies |
Description: IC PRESSURE SENSOR ABS DSOF8 Packaging: Tape & Reel (TR) Applications: Board Mount Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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KP229E3201XTMA1 | Infineon Technologies |
Description: IC PRESSURE SENSOR ABS DSOF8 Packaging: Cut Tape (CT) Applications: Board Mount Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLE4284DV26ATMA1 | Infineon Technologies |
Description: IC REG LINEAR 2.6V 1A TO252-3-11 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 1.6 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 2.6V Grade: Automotive PSRR: 65dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
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S25FL064P0XNFI003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
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IAUCN04S6N013TATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
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IAUCN04S6N013TATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
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IRGP4620D-EPBF | Infineon Technologies |
Description: IGBT 600V 32A 140W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 31ns/83ns Switching Energy: 75µJ (on), 225µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 36 A Power - Max: 140 W |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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IRGP4620D-EPBF | Infineon Technologies |
Description: IGBT 600V 32A 140W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 31ns/83ns Switching Energy: 75µJ (on), 225µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 36 A Power - Max: 140 W |
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IRGP4640PBF | Infineon Technologies |
Description: IGBT 600V 65A 250W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 40ns/105ns Switching Energy: 100µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
на замовлення 145 шт: термін постачання 21-31 дні (днів) |
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IRGP4640PBF | Infineon Technologies |
Description: IGBT 600V 65A 250W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 40ns/105ns Switching Energy: 100µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
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IRGP4630D-EPBF | Infineon Technologies |
Description: IGBT 600V 47A 206W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 40ns/105ns Switching Energy: 95µJ (on), 350µJ (off) Test Condition: 400V, 18A, 22Ohm, 15V Gate Charge: 35 nC Current - Collector (Ic) (Max): 47 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 54 A Power - Max: 206 W |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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AUIRGP66524D0 | Infineon Technologies |
Description: IGBT 600V 60A 214W TO-247AC Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 176 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 30ns/75ns Switching Energy: 915µJ (on), 280µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 214 W |
на замовлення 605 шт: термін постачання 21-31 дні (днів) |
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IRGP4660D-EPBF | Infineon Technologies |
Description: IGBT 600V 100A TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 60ns/145ns Switching Energy: 625µJ (on), 1.28mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 144 A Power - Max: 330 W |
на замовлення 723 шт: термін постачання 21-31 дні (днів) |
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IRGP4660D-EPBF | Infineon Technologies |
Description: IGBT 600V 100A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 60ns/145ns Switching Energy: 625µJ (on), 1.28mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 144 A Power - Max: 330 W |
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IRGR2B60KDPBF | Infineon Technologies |
Description: IGBT NPT 600V 6.3A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A Supplier Device Package: TO-252AA (DPAK) IGBT Type: NPT Td (on/off) @ 25°C: 11ns/150ns Switching Energy: 74µJ (on), 39µJ (off) Test Condition: 400V, 2A, 100Ohm, 15V Gate Charge: 12 nC Current - Collector (Ic) (Max): 6.3 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 8 A Power - Max: 35 W |
на замовлення 933 шт: термін постачання 21-31 дні (днів) |
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S99GL512S0180 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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S99GL512S10DHI010 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
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CY7C1009D-10VXIT | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJ Packaging: Tape & Reel (TR) Package / Case: 32-BSOJ (0.300", 7.62mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
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CY7C1009D-10VXIT | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJ Packaging: Cut Tape (CT) Package / Case: 32-BSOJ (0.300", 7.62mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
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CY7C1010DV33-10VXI | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 36SOJ Packaging: Bulk Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
на замовлення 3911 шт: термін постачання 21-31 дні (днів) |
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CY62157DV30LL-55ZSXI | Infineon Technologies |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II Packaging: Bag Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
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S25FL128SDSMFBG10 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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FZ400R12KS4PHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 800A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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FF2400R12IP7BPSA1 | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FF2400R12IP7PBPSA1 | Infineon Technologies |
Description: PP IHM I Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter NTC Thermistor: No Supplier Device Package: AG-PRIME3+ Current - Collector (Ic) (Max): 2400 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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FD1400R12IP4DBOSA1 | Infineon Technologies |
Description: MOSFET Packaging: Bulk |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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FF1400R12IP4B60BOSA1 | Infineon Technologies |
Description: PP IHM I Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 7650 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V |
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FF1400R12IP4PB60BPSA1 | Infineon Technologies |
Description: PP IHM I Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 7650 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V |
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FZ2400R12HP4PHPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 3460A AGIHMB130-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA NTC Thermistor: No Supplier Device Package: AG-IHMB130-2 IGBT Type: Trench Current - Collector (Ic) (Max): 3460 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 12500 W Current - Collector Cutoff (Max): 5 mA |
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FZ2400R12HE4PB9HPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 2400A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 2400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
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ISZ330N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V |
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ISZ330N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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CY8C4046LQI-T452 | Infineon Technologies |
Description: CONSUMER / IOT MCUS Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, Microwire, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 19 |
на замовлення 792 шт: термін постачання 21-31 дні (днів) |
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DD220N22SHPSA1 | Infineon Technologies |
Description: LA-T-BOND MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 130°C (TC) Structure: Series Connection - SCR/Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 5750A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 273 A Current - On State (It (RMS)) (Max): 275 A Voltage - Off State: 2.2 kV |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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CY4609 |
Виробник: Infineon Technologies
Description: EVAL BOARD HX3 USB HUB CYUSB3304
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3304
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
Description: EVAL BOARD HX3 USB HUB CYUSB3304
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3304
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4700.15 грн |
TLE9140EQWXUMA1 |
Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
товар відсутній
TLE9140EQWXUMA1 |
Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 75V
Technology: Power MOSFET
Supplier Device Package: PG-TSDSO-32-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
на замовлення 912 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 370.71 грн |
10+ | 320.61 грн |
25+ | 303.1 грн |
100+ | 246.52 грн |
250+ | 233.87 грн |
500+ | 209.85 грн |
TLE4973A025T5S0001XUMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 271.75 грн |
TLE4973A025T5S0001XUMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 493.76 грн |
10+ | 380.68 грн |
25+ | 352.09 грн |
100+ | 285.77 грн |
500+ | 267.91 грн |
1000+ | 250.05 грн |
TLE4973A050T5S0001XUMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
товар відсутній
TLE4973A050T5S0001XUMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 507.09 грн |
10+ | 390.95 грн |
25+ | 361.63 грн |
100+ | 293.53 грн |
500+ | 275.19 грн |
1000+ | 256.84 грн |
IR3859MTRPBF |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 9A 17QFN
Packaging: Bulk
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 9A 17QFN
Packaging: Bulk
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
на замовлення 2295 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
149+ | 147.63 грн |
AUIRF1324 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
на замовлення 7842 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
159+ | 136.28 грн |
EVALTOLTDC36V2KWTOBO1 |
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 57317.99 грн |
CY27410LTXI-002 |
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
товар відсутній
CY27410LTXI-013 |
Виробник: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
CY7C1041CV33-12ZSXE |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товар відсутній
IRGB4059DPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
на замовлення 420 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
256+ | 86.24 грн |
IRGB4059DPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
Description: IGBT 600V 8A 56W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/65ns
Switching Energy: 35µJ (on), 75µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 56 W
товар відсутній
CY9AF116MPMC-G-MNE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 80LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 80LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
IPL65R1K5C6SATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 26.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
540+ | 40.52 грн |
KP229E3201XTMA1 |
Виробник: Infineon Technologies
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 218.8 грн |
KP229E3201XTMA1 |
Виробник: Infineon Technologies
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
Description: IC PRESSURE SENSOR ABS DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 474.17 грн |
TLE4284DV26ATMA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 2.6V 1A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 2.6V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 2.6V 1A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 2.6V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
товар відсутній
S25FL064P0XNFI003 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товар відсутній
IAUCN04S6N013TATMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
IAUCN04S6N013TATMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
IRGP4620D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 133.05 грн |
IRGP4620D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Description: IGBT 600V 32A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
товар відсутній
IRGP4640PBF |
Виробник: Infineon Technologies
Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 145 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
145+ | 145.72 грн |
IRGP4640PBF |
Виробник: Infineon Technologies
Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 65A 250W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 100µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
товар відсутній
IRGP4630D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 47A 206W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
Description: IGBT 600V 47A 206W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 171.71 грн |
AUIRGP66524D0 |
Виробник: Infineon Technologies
Description: IGBT 600V 60A 214W TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
Description: IGBT 600V 60A 214W TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
на замовлення 605 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
71+ | 312.61 грн |
IRGP4660D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Description: IGBT 600V 100A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
на замовлення 723 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
52+ | 423.42 грн |
IRGP4660D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
Description: IGBT 600V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товар відсутній
IRGR2B60KDPBF |
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
Description: IGBT NPT 600V 6.3A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
на замовлення 933 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
408+ | 53.36 грн |
S99GL512S10DHI010 |
товар відсутній
CY7C1009D-10VXIT |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1009D-10VXIT |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1010DV33-10VXI |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
90+ | 245.1 грн |
CY62157DV30LL-55ZSXI |
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товар відсутній
S25FL128SDSMFBG10 |
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
FZ400R12KS4PHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MODULE 1200V 800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 12293.12 грн |
FF2400R12IP7BPSA1 |
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 63653.82 грн |
FF2400R12IP7PBPSA1 |
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 67339.02 грн |
FD1400R12IP4DBOSA1 |
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 47851.07 грн |
FF1400R12IP4B60BOSA1 |
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
товар відсутній
FF1400R12IP4PB60BPSA1 |
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
товар відсутній
FZ2400R12HP4PHPSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 3460A AGIHMB130-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 12500 W
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 1200V 3460A AGIHMB130-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 12500 W
Current - Collector Cutoff (Max): 5 mA
товар відсутній
FZ2400R12HE4PB9HPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 2400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Description: IGBT MODULE 1200V 2400A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
товар відсутній
ISZ330N12LM6ATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
товар відсутній
ISZ330N12LM6ATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 103.46 грн |
10+ | 81.43 грн |
100+ | 63.36 грн |
500+ | 50.4 грн |
1000+ | 41.05 грн |
2000+ | 38.65 грн |
CY8C4046LQI-T452 |
Виробник: Infineon Technologies
Description: CONSUMER / IOT MCUS
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
Description: CONSUMER / IOT MCUS
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
на замовлення 792 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 308.01 грн |
10+ | 266.72 грн |
25+ | 252.14 грн |
80+ | 205.06 грн |
230+ | 194.54 грн |
490+ | 174.56 грн |
DD220N22SHPSA1 |
Виробник: Infineon Technologies
Description: LA-T-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TC)
Structure: Series Connection - SCR/Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 5750A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 273 A
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 2.2 kV
Description: LA-T-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TC)
Structure: Series Connection - SCR/Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 5750A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 273 A
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 2.2 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3865.46 грн |