Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136445) > Сторінка 410 з 2275
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPD65R380E6ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
IPD65R380E6ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 4993 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
IPP65R380C6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
товар відсутній |
||||||||||||||||
![]() |
IPP65R380E6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
товар відсутній |
|||||||||||||||
![]() |
BF771E6765N | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 15dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23-3-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
IPB060N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
IPB060N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
на замовлення 1564 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPBE65R075CFD7AATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-TO263-7-3-10 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
|
IPBE65R230CFD7AATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO263-7-3-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPBE65R230CFD7AATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO263-7-3-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2421 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
PTMA080302MV1AUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Frequency: 700MHz ~ 1GHz RF Type: GSM, EDGE Gain: 30dB Supplier Device Package: PG-DSO-20-63 Part Status: Obsolete |
на замовлення 166 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
CY7C1399BL-12ZXCT | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CY25811ZXCT | Infineon Technologies |
![]() |
на замовлення 6860 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BSC0502NSIATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BSC0502NSIATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 24257 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
KP229E2701XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.4 V ~ 4.65 V Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa) Pressure Type: Absolute Accuracy: ±0.544PSI (±3.75kPa) Operating Temperature: -40°C ~ 140°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
IRLR8721TRPBF-1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V |
товар відсутній |
||||||||||||||||
![]() |
XC167CI32F40FBBAKXUMA1 | Infineon Technologies |
![]() |
товар відсутній |
|||||||||||||||
![]() |
TLI4906L | Infineon Technologies |
![]() Packaging: Bulk Features: Temperature Compensated Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 18mT Trip, 5mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Part Status: Active |
на замовлення 19999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
SAK-C868-1SG BA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: RAM Core Processor: C800 Data Converters: A/D 5x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: UART/USART Peripherals: Brown-out Detect/Reset, PWM, WDT Supplier Device Package: P-DSO-28 Part Status: Obsolete Number of I/O: 18 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
![]() |
TLE9255WSKXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-14 Duplex: Full Part Status: Active Grade: Automotive |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
TLE9255WSKXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-14 Duplex: Full Part Status: Active Grade: Automotive |
на замовлення 7063 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BAS70-04E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товар відсутній |
|||||||||||||||
![]() |
IRL520NSTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
AIKW50N65RF5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/156ns Switching Energy: 310µJ (on), 120µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W Qualification: AEC-Q101 |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BTS500201TADATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 3mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 29A Ratio - Input:Output: 1:1 Supplier Device Package: P/PG-TO-263-7-10 Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||
![]() |
IFX1040SJXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 200 mV Duplex: Full |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
TLE8457ASJXUMA1 | Infineon Technologies |
![]() |
товар відсутній |
|||||||||||||||
![]() |
CY7C4205-10AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (256 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 45mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
на замовлення 1057 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
CY7C4205-10AC | Infineon Technologies |
Description: IC FIFO SYNC 256X18 8NS 64TQFP Packaging: Bag Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (256 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 45mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
CY7C4291V-15JXC | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Function: Synchronous Memory Size: 1.125M (128K x 9) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 25mA Supplier Device Package: 32-PLCC (11.43x13.97) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Voltage - Supply: 3 V ~ 3.6 V DigiKey Programmable: Not Verified |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
PVDZ172NS-TPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 1.5 A Supplier Device Package: 8-SMD Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 250 MOhms |
на замовлення 1178 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
IDD06SG60CXTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
IDD06SG60CXTMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 9975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
TLS4125D0EPVXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Output (Max): 10V Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3V Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||
![]() |
IAUC60N04S6N044ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
IAUC60N04S6N044ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10517 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
TLE73683EXUMA3 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 5V, 3.3V/2.6V, 1.3V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 45V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Power Supply, Automotive Applications Supplier Device Package: PG-DSO-36 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
TLE73683EXUMA3 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 5V, 3.3V/2.6V, 1.3V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 45V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Power Supply, Automotive Applications Supplier Device Package: PG-DSO-36 |
на замовлення 5667 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
FZ1800R12KF4S1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2700 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FZ1800R12KL4C | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHM190-2-1 Part Status: Active Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 135 nF @ 25 V |
на замовлення 59 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
![]() |
BSZ180P03NS3GATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
BSZ180P03NS3GATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
на замовлення 9340 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
FZ1800R12HP4B9NPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2700 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
![]() |
FZ1800R17HP4B9HOSA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
FZ1800R17HP4B29BOSA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V |
на замовлення 174 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
FZ1800R17HP4_B29 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FZ1800R17KE3B2NOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 12.5 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 160 nF @ 25 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FZ1800R17KF4NOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 3560 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 13500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FZ1800R17HE4B9NPSA1 | Infineon Technologies |
![]() |
товар відсутній |
||||||||||||||||
![]() |
IR3595AMTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs |
товар відсутній |
|||||||||||||||
![]() |
IR3595AMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
![]() |
2N7002L6327HTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT23-PO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V |
товар відсутній |
|||||||||||||||
![]() |
BSZ042N04NSG | Infineon Technologies |
![]() |
на замовлення 47574 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||
![]() |
ESD230B1W0201E6327XTSA1 | Infineon Technologies |
![]() |
товар відсутній |
|||||||||||||||
![]() |
IPS514G | Infineon Technologies |
![]() Packaging: Tube Features: Auto Restart Package / Case: 28-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 130mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 850mA Ratio - Input:Output: 1:1 Supplier Device Package: 28-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Part Status: Obsolete |
товар відсутній |
|||||||||||||||
IPS50R520CPBKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товар відсутній |
||||||||||||||||
![]() |
IPS50R520CPAKMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товар відсутній |
|||||||||||||||
TLE75620EMTXUMA1 | Infineon Technologies |
![]() |
товар відсутній |
||||||||||||||||
PEB3265HV1.5 | Infineon Technologies | Description: SLIC FILTER |
товар відсутній |
IPD65R380E6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 62.72 грн |
IPD65R380E6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 138.87 грн |
10+ | 111.25 грн |
100+ | 88.55 грн |
500+ | 70.32 грн |
1000+ | 59.66 грн |
IPP65R380C6 |
![]() |
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPP65R380E6 |
![]() |
Виробник: Infineon Technologies
Description: IPP65R380E6 - 650V-700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: IPP65R380E6 - 650V-700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
BF771E6765N |
![]() |
Виробник: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23-3-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23-3-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4157+ | 4.87 грн |
IPB060N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 274.22 грн |
IPB060N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
на замовлення 1564 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 483.01 грн |
10+ | 398.99 грн |
100+ | 332.53 грн |
500+ | 275.35 грн |
IPBE65R075CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPBE65R230CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 112.64 грн |
IPBE65R230CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 169.4 грн |
10+ | 137.11 грн |
100+ | 110.89 грн |
500+ | 101.79 грн |
PTMA080302MV1AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Packaging: Bulk
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 1GHz
RF Type: GSM, EDGE
Gain: 30dB
Supplier Device Package: PG-DSO-20-63
Part Status: Obsolete
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Packaging: Bulk
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 1GHz
RF Type: GSM, EDGE
Gain: 30dB
Supplier Device Package: PG-DSO-20-63
Part Status: Obsolete
на замовлення 166 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 2222.75 грн |
CY7C1399BL-12ZXCT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
423+ | 50.03 грн |
CY25811ZXCT |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
на замовлення 6860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
219+ | 95.56 грн |
BSC0502NSIATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 36.44 грн |
10000+ | 33.47 грн |
BSC0502NSIATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 24257 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 92.33 грн |
10+ | 72.89 грн |
100+ | 56.68 грн |
500+ | 45.09 грн |
1000+ | 36.73 грн |
2000+ | 34.57 грн |
KP229E2701XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR 43.51PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 43.51PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 363.21 грн |
10+ | 262.76 грн |
25+ | 233.6 грн |
50+ | 208.25 грн |
100+ | 202.77 грн |
500+ | 192.97 грн |
IRLR8721TRPBF-1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
товар відсутній
XC167CI32F40FBBAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Description: IC MCU 16BIT 256KB FLASH 144TQFP
товар відсутній
TLI4906L |
![]() |
Виробник: Infineon Technologies
Description: TLI4906 - HALL SWITCH
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 18mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Description: TLI4906 - HALL SWITCH
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 18mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
на замовлення 19999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
739+ | 28.52 грн |
SAK-C868-1SG BA |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB RAM DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: RAM
Core Processor: C800
Data Converters: A/D 5x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: UART/USART
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: P-DSO-28
Part Status: Obsolete
Number of I/O: 18
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB RAM DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: RAM
Core Processor: C800
Data Converters: A/D 5x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: UART/USART
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: P-DSO-28
Part Status: Obsolete
Number of I/O: 18
DigiKey Programmable: Not Verified
товар відсутній
TLE9255WSKXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 94.28 грн |
5000+ | 87.42 грн |
TLE9255WSKXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
на замовлення 7063 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.02 грн |
10+ | 178.18 грн |
25+ | 168.12 грн |
100+ | 134.42 грн |
250+ | 126.22 грн |
500+ | 110.44 грн |
1000+ | 90.01 грн |
BAS70-04E6327 |
![]() |
Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
IRL520NSTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товар відсутній
AIKW50N65RF5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 750.83 грн |
10+ | 652.78 грн |
30+ | 622.39 грн |
120+ | 507.16 грн |
BTS500201TADATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 29A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 29A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
IFX1040SJXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
452+ | 46.5 грн |
TLE8457ASJXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 DSO-8
Description: IC TRANSCEIVER 1/1 DSO-8
товар відсутній
CY7C4205-10AXC |
![]() |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 1057 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 995.22 грн |
CY7C4205-10AC |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 92 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
38+ | 570.11 грн |
CY7C4291V-15JXC |
![]() |
Виробник: Infineon Technologies
Description: IC FIFO SYNC 128KX9 10NS 32PLCC
Packaging: Bulk
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 1.125M (128K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 25mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 128KX9 10NS 32PLCC
Packaging: Bulk
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 1.125M (128K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 25mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
на замовлення 23 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 2182.3 грн |
PVDZ172NS-TPBF |
![]() |
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.5 A
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.5 A
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
46+ | 467.96 грн |
IDD06SG60CXTMA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 123.54 грн |
5000+ | 114.14 грн |
IDD06SG60CXTMA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 9975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 254.09 грн |
10+ | 205.15 грн |
100+ | 166 грн |
500+ | 138.48 грн |
1000+ | 118.57 грн |
TLS4125D0EPVXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
IAUC60N04S6N044ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 23.16 грн |
10000+ | 21.27 грн |
IAUC60N04S6N044ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10517 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 58.75 грн |
10+ | 46.36 грн |
100+ | 36.03 грн |
500+ | 28.66 грн |
1000+ | 23.35 грн |
2000+ | 21.98 грн |
TLE73683EXUMA3 |
![]() |
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 310.93 грн |
TLE73683EXUMA3 |
![]() |
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
на замовлення 5667 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 420.44 грн |
10+ | 365.63 грн |
25+ | 348.64 грн |
100+ | 284.09 грн |
250+ | 280.99 грн |
FZ1800R12KF4S1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 80611.72 грн |
FZ1800R12KL4C |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 95273.61 грн |
BSZ180P03NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 19.21 грн |
BSZ180P03NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
на замовлення 9340 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53.41 грн |
10+ | 44.53 грн |
100+ | 30.83 грн |
500+ | 24.17 грн |
1000+ | 20.57 грн |
2000+ | 18.32 грн |
FZ1800R12HP4B9NPSA1 |
![]() |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 62064.43 грн |
FZ1800R17HP4B9HOSA2 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 75062.11 грн |
FZ1800R17HP4B29BOSA2 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 107229.74 грн |
FZ1800R17HP4_B29 |
![]() |
Виробник: Infineon Technologies
Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 105203.09 грн |
FZ1800R17KE3B2NOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 109412.04 грн |
FZ1800R17KF4NOSA1 |
![]() |
Виробник: Infineon Technologies
Description: FZ1800R17 - INSULATED GATE BIPOL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Description: FZ1800R17 - INSULATED GATE BIPOL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 132427.72 грн |
FZ1800R17HE4B9NPSA1 |
![]() |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Description: INSULATED GATE BIPOLAR TRANSISTO
товар відсутній
IR3595AMTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
товар відсутній
IR3595AMTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
на замовлення 16 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 429.59 грн |
10+ | 371.8 грн |
2N7002L6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товар відсутній
BSZ042N04NSG |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A TO220AB
Description: MOSFET N-CH 40V 40A TO220AB
на замовлення 47574 шт:
термін постачання 21-31 дні (днів)ESD230B1W0201E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 5.5V 14V WLL-2-1
Description: TVS DIODE 5.5V 14V WLL-2-1
товар відсутній
IPS514G |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Packaging: Tube
Features: Auto Restart
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Packaging: Tube
Features: Auto Restart
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IPS50R520CPBKMA1 |
![]() |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товар відсутній
IPS50R520CPAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товар відсутній
TLE75620EMTXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
товар відсутній