Технічний опис IPS60R650CEAKMA1 Infineon Technologies
Description: CONSUMER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Tj), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Power Dissipation (Max): 82W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.
Інші пропозиції IPS60R650CEAKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPS60R650CEAKMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-251 Tube |
товар відсутній |
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IPS60R650CEAKMA1 | Виробник : Infineon Technologies |
Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Tj) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товар відсутній |