Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3893) > Сторінка 20 з 65
| Фото | Назва | Виробник | Інформація |
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AOD516_051 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
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AOD518 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 30V 15A TO252 |
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AOD518 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A TO252 |
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| AOD518_050 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A TO252 |
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| AOD518_051 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH TO-252 |
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| AOD520 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH |
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| AOD522 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH |
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AOD522P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 17A/46A TO252 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
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AOD526_DELTA | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 50A TO252 |
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AOD528 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 17A/50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
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AOD538 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 34A |
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| AOD558 | Alpha & Omega Semiconductor Inc. |
Description: 30V N-CHANNEL MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V |
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| AOD558 | Alpha & Omega Semiconductor Inc. |
Description: 30V N-CHANNEL MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V |
на замовлення 2148 шт: термін постачання 21-31 дні (днів) |
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AOD5B60D | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 10A 54.4W TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 12ns/82ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 54.4 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AOD5B60D | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 10A 54.4W TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 12ns/82ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 54.4 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AOD5B65M1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 69 W |
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AOD5B65M1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 69 W |
на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
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| AOD5B65MQ1E | Alpha & Omega Semiconductor Inc. |
Description: IGBT 5A 650V TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 7ns/78ns Switching Energy: 90µJ (on), 60µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 8.8 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 52 W |
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AOD5B65N1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8ns/73ns Switching Energy: 81µJ (on), 49µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.2 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 52 W |
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AOD5N40 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 4.2A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
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AOD5N40 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 4.2A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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AOD5N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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| AOD5N50_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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AOD5N50M | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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AOD5T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 3.9A TO252 |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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AOD5T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 3.9A TO252 |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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AOD5T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 3.9A TO252 |
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AOD600A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V |
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AOD600A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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AOD600A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 3511 шт: термін постачання 21-31 дні (днів) |
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AOD600A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AOD600A70R | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AOD600A70R | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 4677 шт: термін постачання 21-31 дні (днів) |
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AOD603A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 3.5A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L |
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AOD604 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 8A TO252-5 Packaging: Tape & Reel (TR) Package / Case: TO-252-6, DPak (5 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-5 |
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AOD606 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L |
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AOD607 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-4L |
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AOD607_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Supplier Device Package: TO-252-4L |
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AOD607A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19W (Tc), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L |
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AOD607_DELTA | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L Part Status: Obsolete |
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AOD609 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Not For New Designs |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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AOD609 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Not For New Designs |
на замовлення 151876 шт: термін постачання 21-31 дні (днів) |
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AOD609G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
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AOD609G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
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AOD661 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2 N-CH 30V 12A TO252-4L |
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AOD66406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 25A/60A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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AOD66406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 25A/60A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V |
на замовлення 38465 шт: термін постачання 21-31 дні (днів) |
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| AOD66919 | Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V |
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AOD66920 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 19.5A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 102500 шт: термін постачання 21-31 дні (днів) |
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AOD66920 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 19.5A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 103266 шт: термін постачання 21-31 дні (днів) |
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AOD66923 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5A/58A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AOD66923 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5A/58A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 10741 шт: термін постачання 21-31 дні (днів) |
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| AOD6B65MQ1E | Alpha & Omega Semiconductor Inc. |
Description: IGBT 8A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 9ns/91ns Switching Energy: 110µJ (on), 80µJ (off) Test Condition: 400V, 6A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 18 A Power - Max: 96 W |
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AOD6N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5.3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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AOD6N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5.3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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AOD7B65M3 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 7A TO252 |
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AOD7N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V |
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AOD7N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V |
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AOD7N65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AOD7N65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
на замовлення 7306 шт: термін постачання 21-31 дні (днів) |
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| AOD516_051 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
товар відсутній
| AOD518 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A TO252
Description: MOSFET N-CH 30V 15A TO252
товар відсутній
| AOD518 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A TO252
Description: MOSFET N-CH 30V 15A TO252
товар відсутній
| AOD518_050 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A TO252
Description: MOSFET N-CH 30V 15A TO252
товар відсутній
| AOD518_051 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO-252
Description: MOSFET N-CH TO-252
товар відсутній
| AOD522P |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товар відсутній
| AOD526_DELTA |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 50A TO252
Description: MOSFET N-CH 30V 50A TO252
товар відсутній
| AOD528 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: MOSFET N-CH 30V 17A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
товар відсутній
| AOD558 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
Description: 30V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
товар відсутній
| AOD558 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
Description: 30V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.1 грн |
| 10+ | 36.09 грн |
| 100+ | 25.1 грн |
| 500+ | 18.39 грн |
| 1000+ | 14.95 грн |
| AOD5B60D |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 10A 54.4W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
Description: IGBT 600V 10A 54.4W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.21 грн |
| 10+ | 76.95 грн |
| 100+ | 51.65 грн |
| 500+ | 38.29 грн |
| 1000+ | 35.01 грн |
| AOD5B60D |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 10A 54.4W TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
Description: IGBT 600V 10A 54.4W TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.81 грн |
| 5000+ | 31.18 грн |
| AOD5B65M1 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
товар відсутній
| AOD5B65M1 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
Description: IGBT 650V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.15 грн |
| 10+ | 73.29 грн |
| 100+ | 57.11 грн |
| 500+ | 44.27 грн |
| 1000+ | 34.95 грн |
| AOD5B65MQ1E |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 5A 650V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 7ns/78ns
Switching Energy: 90µJ (on), 60µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 8.8 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
Description: IGBT 5A 650V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 7ns/78ns
Switching Energy: 90µJ (on), 60µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 8.8 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
товар відсутній
| AOD5B65N1 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8ns/73ns
Switching Energy: 81µJ (on), 49µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.2 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8ns/73ns
Switching Energy: 81µJ (on), 49µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.2 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
товар відсутній
| AOD5N40 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
| AOD5N40 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.82 грн |
| 10+ | 34.92 грн |
| 100+ | 24.19 грн |
| AOD5N50 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
| AOD5N50_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
| AOD5N50M |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
| AOD5T40P |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Description: MOSFET N-CH 400V 3.9A TO252
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)| AOD5T40P |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Description: MOSFET N-CH 400V 3.9A TO252
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)| AOD5T40P |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Description: MOSFET N-CH 400V 3.9A TO252
товар відсутній
| AOD600A60 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Description: MOSFET N-CH 600V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
товар відсутній
| AOD600A60 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Description: MOSFET N-CH 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.8 грн |
| 10+ | 82.81 грн |
| 100+ | 64.54 грн |
| AOD600A70 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 3511 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.84 грн |
| 10+ | 77.68 грн |
| 100+ | 60.41 грн |
| 500+ | 48.05 грн |
| 1000+ | 39.14 грн |
| AOD600A70 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 40.78 грн |
| AOD600A70R |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.24 грн |
| AOD600A70R |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 4677 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.24 грн |
| 10+ | 71.75 грн |
| 100+ | 55.77 грн |
| 500+ | 44.36 грн |
| 1000+ | 36.14 грн |
| AOD603A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 3.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 60V 3.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
товар відсутній
| AOD604 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-5
Description: MOSFET N/P-CH 40V 8A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-5
товар відсутній
| AOD606 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
товар відсутній
| AOD607 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
товар відсутній
| AOD607_001 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-252-4L
товар відсутній
| AOD607A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
товар відсутній
| AOD607_DELTA |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
товар відсутній
| AOD609 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.56 грн |
| 5000+ | 22.41 грн |
| 12500+ | 20.75 грн |
| 25000+ | 19.28 грн |
| AOD609 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 151876 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.63 грн |
| 10+ | 53.96 грн |
| 100+ | 37.35 грн |
| 500+ | 29.29 грн |
| 1000+ | 24.92 грн |
| AOD609G |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товар відсутній
| AOD609G |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товар відсутній
| AOD661 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CH 30V 12A TO252-4L
Description: MOSFET 2 N-CH 30V 12A TO252-4L
товар відсутній
| AOD66406 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.25 грн |
| AOD66406 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 38465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.3 грн |
| 10+ | 33.61 грн |
| 100+ | 23.27 грн |
| 500+ | 18.24 грн |
| 1000+ | 15.53 грн |
| AOD66919 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
товар відсутній
| AOD66920 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 102500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 33.92 грн |
| AOD66920 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 103266 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.87 грн |
| 10+ | 50.08 грн |
| 100+ | 38.96 грн |
| 500+ | 31 грн |
| 1000+ | 30.66 грн |
| AOD66923 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 28.24 грн |
| AOD66923 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 10741 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.22 грн |
| 10+ | 41.66 грн |
| 100+ | 32.44 грн |
| 500+ | 25.8 грн |
| 1000+ | 25.52 грн |
| AOD6B65MQ1E |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 8A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 9ns/91ns
Switching Energy: 110µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 96 W
Description: IGBT 8A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 9ns/91ns
Switching Energy: 110µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 96 W
товар відсутній
| AOD6N50 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
| AOD6N50 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
| AOD7N60 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
товар відсутній
| AOD7N60 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
товар відсутній
| AOD7N65 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 28.33 грн |
| AOD7N65 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 7306 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.27 грн |
| 10+ | 59.52 грн |
| 100+ | 46.29 грн |
| 500+ | 36.82 грн |
| 1000+ | 29.99 грн |