AOD607_DELTA Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
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Технічний опис AOD607_DELTA Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 25W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA, Supplier Device Package: TO-252-4L, Part Status: Obsolete.