AOD5B65MQ1E ALPHA & OMEGA SEMICONDUCTOR


AOD5B65MQ1E.pdf Виробник: ALPHA & OMEGA SEMICONDUCTOR
AOD5B65MQ1E SMD IGBT transistors
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Технічний опис AOD5B65MQ1E ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 5A 650V TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 7ns/78ns, Switching Energy: 90µJ (on), 60µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 8.8 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 52 W.

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AOD5B65MQ1E Виробник : Alpha & Omega Semiconductor Inc. AOD5B65MQ1E.pdf Description: IGBT 5A 650V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 7ns/78ns
Switching Energy: 90µJ (on), 60µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 8.8 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
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