Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3907) > Сторінка 23 з 66
Фото | Назва | Виробник | Інформація |
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AOK40B65HQ1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W |
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AOK40B65HQ2 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W |
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AOK40B65HQ3 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W |
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AOK40B65M3 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 365 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 40ns/125ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 59 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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AOK40N30L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 300V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
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AOK42S60L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 39A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V |
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AOK50B60D1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 100A 312W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/68ns Switching Energy: 2.37mJ (on), 500µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 64 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 168 A Power - Max: 312 W |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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AOK50B65GL1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 50A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 282ns/915ns Switching Energy: 3.37mJ (on), 1.59mJ (off) Test Condition: 300V, 50A, 100Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 312 W |
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AOK50B65H1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 50A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 261 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 37ns/141ns Switching Energy: 1.92mJ (on), 850µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 76 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 375 W |
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AOK50B65M2 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 327 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 46ns/182ns Switching Energy: 2.09mJ (on), 1.03mJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 102 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 500 W |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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AOK53S60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 53A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V |
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AOK53S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 |
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AOK5N100 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 |
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AOK5N100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 |
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AOK60B60D1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 120A 417W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 32ns/74ns Switching Energy: 3.1mJ (on), 730µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 210 A Power - Max: 417 W |
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AOK60B65H1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 288 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 39ns/153ns Switching Energy: 2.42mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W |
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AOK60B65H2AL | Alpha & Omega Semiconductor Inc. |
Description: IGBT 60A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 318 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 35ns/168ns Switching Energy: 2.36mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W |
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AOK60B65HQ3 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 60A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 36ns/157ns Switching Energy: 2.21mJ (on), 1.2mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W |
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AOK60B65M3 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 346 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 44ns/166ns Switching Energy: 2.6mJ (on), 1.3mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 106 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W |
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AOK60N30L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 300V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V Power Dissipation (Max): 658W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V |
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AOK66613 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 58.5A/120A TO247 |
на замовлення 590 шт: термін постачання 21-31 дні (днів) |
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AOK75B60D1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 150A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 147 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 33ns/84ns Switching Energy: 3.7mJ (on), 1.3mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 118 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 290 A Power - Max: 500 W |
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AOK75B65H1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 75A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 295 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 47ns/175ns Switching Energy: 3.77mJ (on), 2.04mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 556 W |
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AOK8N80 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
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AOK8N80L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
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AOK9N90 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 900V 9A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V |
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AOKS30B60D1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/58ns Switching Energy: 1.1mJ (on), 240µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 34 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 208 W |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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AOKS40B60D1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 29ns/74ns Switching Energy: 1.55mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 45 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 278 W |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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AOKS40B65H1 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 41ns/130ns Switching Energy: 1.27mJ (on), 460µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
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AOKS40B65H2AL | Alpha & Omega Semiconductor Inc. |
Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
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AOL1202 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 16A 8ULTRA-SO |
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AOL1206 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 16A 8ULTRASO |
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AOL1208 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 11A 8ULTRASO |
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AOL1240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 19A/69A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V |
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AOL1240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 19A/69A ULTRASO8 Packaging: Cut Tape (CT) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V |
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AOL1242 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 14A/69A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 20 V |
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AOL1404 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 20V 18A/45A ULTRASO8 |
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AOL1404G | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 20V 30A/46A ULTRASO8 |
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AOL1412 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 17A/70A ULTRASO8 Packaging: Cut Tape (CT) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: UltraSO-8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V |
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AOL1412 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 17A/70A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: UltraSO-8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V |
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AOL1413 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 38A ULTRASO-8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: UltraSO-8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
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AOL1414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A/85A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.08W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V |
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AOL1418 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 85A 8ULTRASO |
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AOL1418 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 85A 8ULTRASO |
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AOL1422 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 85A 8ULTRASO |
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AOL1422 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 85A 8ULTRASO |
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AOL1424 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/70A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V |
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AOL1426 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 46A 8ULTRASO |
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AOL1426 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 46A 8ULTRASO |
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AOL1428 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 12.4A ULTRASO8 |
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AOL1428 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 12.4A ULTRASO8 |
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AOL1428A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 12.4A ULTRASO8 |
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AOL1432 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 12A/44A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: UltraSO-8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V |
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AOL1432 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 12A/44A ULTRASO8 Packaging: Cut Tape (CT) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: UltraSO-8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V |
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AOL1432A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 12A/44A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: UltraSO-8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V |
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AOL1440 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 25V 85A 8ULTRASO |
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AOL1440 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 25V 85A 8ULTRASO |
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AOL1448 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 11A/36A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V |
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AOL1454 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 12A 8ULTRASO |
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AOL1454_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 12A/50A ULTRASO8 |
товар відсутній |
AOK40B65HQ1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
товар відсутній
AOK40B65HQ2 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
товар відсутній
AOK40B65HQ3 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
товар відсутній
AOK40B65M3 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
на замовлення 249 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 282.15 грн |
30+ | 215.65 грн |
120+ | 184.86 грн |
AOK40N30L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
товар відсутній
AOK42S60L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 39A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
Description: MOSFET N-CH 600V 39A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
товар відсутній
AOK50B60D1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 100A 312W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W
Description: IGBT 600V 100A 312W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W
на замовлення 65 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 344.07 грн |
30+ | 262.54 грн |
AOK50B65GL1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W
Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W
товар відсутній
AOK50B65H1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 261 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/141ns
Switching Energy: 1.92mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 375 W
Description: IGBT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 261 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/141ns
Switching Energy: 1.92mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 375 W
товар відсутній
AOK50B65M2 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 327 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 46ns/182ns
Switching Energy: 2.09mJ (on), 1.03mJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 500 W
Description: IGBT 650V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 327 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 46ns/182ns
Switching Energy: 2.09mJ (on), 1.03mJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 500 W
на замовлення 229 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 311.15 грн |
10+ | 251.62 грн |
AOK53S60 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 53A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V
Description: MOSFET N-CH 600V 53A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V
товар відсутній
AOK53S60L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 53A TO247
Description: MOSFET N-CH 600V 53A TO247
товар відсутній
AOK5N100 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 1000V 4A TO247
Description: MOSFET N-CH 1000V 4A TO247
товар відсутній
AOK5N100L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 1000V 4A TO247
Description: MOSFET N-CH 1000V 4A TO247
товар відсутній
AOK60B60D1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 120A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 32ns/74ns
Switching Energy: 3.1mJ (on), 730µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 417 W
Description: IGBT 600V 120A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 32ns/74ns
Switching Energy: 3.1mJ (on), 730µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 417 W
товар відсутній
AOK60B65H1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 288 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 39ns/153ns
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
Description: IGBT 650V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 288 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 39ns/153ns
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
товар відсутній
AOK60B65H2AL |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 318 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 35ns/168ns
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 318 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 35ns/168ns
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
товар відсутній
AOK60B65HQ3 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/157ns
Switching Energy: 2.21mJ (on), 1.2mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/157ns
Switching Energy: 2.21mJ (on), 1.2mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
товар відсутній
AOK60B65M3 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 346 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 44ns/166ns
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 106 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
Description: IGBT 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 346 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 44ns/166ns
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 106 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
товар відсутній
AOK60N30L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 300V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Description: MOSFET N-CH 300V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
товар відсутній
AOK66613 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 58.5A/120A TO247
Description: MOSFET N-CH 60V 58.5A/120A TO247
на замовлення 590 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 352.69 грн |
10+ | 305.21 грн |
100+ | 250.09 грн |
500+ | 199.8 грн |
AOK75B60D1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 150A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 147 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 33ns/84ns
Switching Energy: 3.7mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 118 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 500 W
Description: IGBT 600V 150A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 147 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 33ns/84ns
Switching Energy: 3.7mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 118 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 500 W
товар відсутній
AOK75B65H1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W
Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W
товар відсутній
AOK8N80 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
AOK8N80L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
AOK9N90 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
товар відсутній
AOKS30B60D1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.4 грн |
AOKS40B60D1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 29ns/74ns
Switching Energy: 1.55mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 45 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 278 W
Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 29ns/74ns
Switching Energy: 1.55mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 45 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 278 W
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.4 грн |
10+ | 148.15 грн |
AOKS40B65H1 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 41ns/130ns
Switching Energy: 1.27mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 41ns/130ns
Switching Energy: 1.27mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товар відсутній
AOKS40B65H2AL |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товар відсутній
AOL1202 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8ULTRA-SO
Description: MOSFET N-CH 30V 16A 8ULTRA-SO
товар відсутній
AOL1206 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8ULTRASO
Description: MOSFET N-CH 30V 16A 8ULTRASO
товар відсутній
AOL1208 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 11A 8ULTRASO
Description: MOSFET N-CH 30V 11A 8ULTRASO
товар відсутній
AOL1240 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
товар відсутній
AOL1240 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
товар відсутній
AOL1242 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 14A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 20 V
Description: MOSFET N-CH 40V 14A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 20 V
товар відсутній
AOL1404 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 18A/45A ULTRASO8
Description: MOSFET N-CH 20V 18A/45A ULTRASO8
товар відсутній
AOL1404G |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 30A/46A ULTRASO8
Description: MOSFET N-CH 20V 30A/46A ULTRASO8
товар відсутній
AOL1412 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/70A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V
Description: MOSFET N-CH 30V 17A/70A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V
товар відсутній
AOL1412 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/70A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V
Description: MOSFET N-CH 30V 17A/70A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V
товар відсутній
AOL1413 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 38A ULTRASO-8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET P-CH 30V 38A ULTRASO-8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
товар відсутній
AOL1414 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/85A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
Description: MOSFET N-CH 30V 14A/85A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
товар відсутній
AOL1418 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Description: MOSFET N-CH 30V 85A 8ULTRASO
товар відсутній
AOL1418 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Description: MOSFET N-CH 30V 85A 8ULTRASO
товар відсутній
AOL1422 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Description: MOSFET N-CH 30V 85A 8ULTRASO
товар відсутній
AOL1422 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Description: MOSFET N-CH 30V 85A 8ULTRASO
товар відсутній
AOL1424 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/70A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Description: MOSFET N-CH 30V 15A/70A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
товар відсутній
AOL1426 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 46A 8ULTRASO
Description: MOSFET N-CH 30V 46A 8ULTRASO
товар відсутній
AOL1426 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 46A 8ULTRASO
Description: MOSFET N-CH 30V 46A 8ULTRASO
товар відсутній
AOL1428 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Description: MOSFET N-CH 30V 12.4A ULTRASO8
товар відсутній
AOL1428 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Description: MOSFET N-CH 30V 12.4A ULTRASO8
товар відсутній
AOL1428A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 12.4A ULTRASO8
Description: MOSFET N-CH 30V 12.4A ULTRASO8
товар відсутній
AOL1432 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V
товар відсутній
AOL1432 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 12.5 V
товар відсутній
AOL1432A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V
Description: MOSFET N-CH 25V 12A/44A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V
товар відсутній
AOL1440 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 85A 8ULTRASO
Description: MOSFET N-CH 25V 85A 8ULTRASO
товар відсутній
AOL1440 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 85A 8ULTRASO
Description: MOSFET N-CH 25V 85A 8ULTRASO
товар відсутній
AOL1448 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 11A/36A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Description: MOSFET N-CH 30V 11A/36A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
товар відсутній
AOL1454 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 12A 8ULTRASO
Description: MOSFET N-CH 40V 12A 8ULTRASO
товар відсутній
AOL1454_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 12A/50A ULTRASO8
Description: MOSFET N-CH 40V 12A/50A ULTRASO8
товар відсутній