Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3896) > Сторінка 25 з 65
Фото | Назва | Виробник | Інформація |
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AON2803G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH DUAL Packaging: Tape & Reel (TR) |
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AON2809 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 12V 2A 6DFN |
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AON2810 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 2A 6DFN |
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AON2810 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 2A 6DFN |
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AON2812 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 4.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-DFN (2x2) |
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AON2880 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 20V 7A DFN2X2 |
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AON3402 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 12.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V |
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AON3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AON3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V |
на замовлення 6100 шт: термін постачання 21-31 дні (днів) |
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AON3419 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 10A DFN |
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AON3611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 5A/6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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AON3611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 5A/6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 25583 шт: термін постачання 21-31 дні (днів) |
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AON3613 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 4.5A 8DFN |
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AON3613 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 4.5A 8DFN |
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AON3806 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
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AON3810 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 20V 8.5A 8-DFN |
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AON3810 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 20V 8.5A 8-DFN |
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AON3810 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 20V 8.5A 8-DFN |
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AON3814 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
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AON3814L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH DUAL 20V TO252 |
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AON3816 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
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AON3816_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4A 8-DFN Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
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AON3818 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 24V 8A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-DFN (3x3) |
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AON4407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
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AON4407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
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AON4407_003 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 12V 9A 8DFN |
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AON4407L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
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AON4407L_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 12V 9A 8DFN |
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AON4407L_003 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 12V 9A 8DFN |
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AON4420 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 10A SFN3X2 |
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AON4420 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 10A SFN3X2 |
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AON4421 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
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AON4421 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
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AON4421_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 8A 8DFN |
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AON4605 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
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AON4605_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
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AON4703 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 3.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
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AON4705L | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 20V 4A 8DFN |
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AON4803 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 20V 3.4A DFN3X2 |
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AON4807 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 4A 8DFN |
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AON4807_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 4A 8DFN |
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AON5802A | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 7.2A 6-DFN |
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AON5802A | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 7.2A 6-DFN |
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AON5802A | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 7.2A 6-DFN |
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AON5802ALS | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH DUAL DFN |
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AON5802B | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 7.2A 6DFN |
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AON5802B_101 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH DUAL DFN |
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AON5802BL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH DUAL 30V 6DFN |
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AON5810 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 20V 7.7A 6DFN |
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AON5816 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 12A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DFN-EP (2x5) Part Status: Active |
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AON5820 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 10A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN-EP (2x5) |
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AON5820_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 10A 6DFN Packaging: Bulk Package / Case: 6-WFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN-EP (2x5) |
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AON6104FD | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 8DFN 5X6 |
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AON6104FH | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 8DFN 5X6 |
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AON6108FD | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 8DFN 5X6 |
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AON6108FH | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 8DFN 5X6 |
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AON6144 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 100A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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AON6144 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V |
на замовлення 29664 шт: термін постачання 21-31 дні (днів) |
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AON6152 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 45V 100A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 22.5 V |
товар відсутній |
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AON6152A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 45V 58A/100A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AON2803G |
товар відсутній
AON2809 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 12V 2A 6DFN
Description: MOSFET 2P-CH 12V 2A 6DFN
товар відсутній
AON2810 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Description: MOSFET 2N-CH 30V 2A 6DFN
товар відсутній
AON2810 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Description: MOSFET 2N-CH 30V 2A 6DFN
товар відсутній
AON2812 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 4.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Description: MOSFET 2N-CH 30V 4.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
товар відсутній
AON2880 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7A DFN2X2
Description: MOSFET 2N-CH 20V 7A DFN2X2
товар відсутній
AON3402 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 12.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
Description: MOSFET N-CH 20V 12.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
товар відсутній
AON3414 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.18 грн |
AON3414 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
на замовлення 6100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
13+ | 22.7 грн |
100+ | 13.6 грн |
500+ | 11.81 грн |
1000+ | 8.03 грн |
AON3419 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 10A DFN
Description: MOSFET P-CH 30V 10A DFN
товар відсутній
AON3611 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.37 грн |
AON3611 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 25583 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.13 грн |
13+ | 23.21 грн |
100+ | 16.17 грн |
500+ | 11.84 грн |
1000+ | 10.27 грн |
AON3613 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Description: MOSFET N/P-CH 30V 4.5A 8DFN
товар відсутній
AON3613 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Description: MOSFET N/P-CH 30V 4.5A 8DFN
товар відсутній
AON3806 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
товар відсутній
AON3810 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
товар відсутній
AON3810 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
товар відсутній
AON3810 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
товар відсутній
AON3814 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
товар відсутній
AON3814L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL 20V TO252
Description: MOSFET N-CH DUAL 20V TO252
товар відсутній
AON3816 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
товар відсутній
AON3816_101 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4A 8-DFN
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 4A 8-DFN
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
товар відсутній
AON3818 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 24V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 24V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN (3x3)
товар відсутній
AON4407 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
товар відсутній
AON4407 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
товар відсутній
AON4407_003 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Description: MOSFET P-CH 12V 9A 8DFN
товар відсутній
AON4407L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
товар відсутній
AON4407L_002 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Description: MOSFET P-CH 12V 9A 8DFN
товар відсутній
AON4407L_003 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Description: MOSFET P-CH 12V 9A 8DFN
товар відсутній
AON4420 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A SFN3X2
Description: MOSFET N-CH 30V 10A SFN3X2
товар відсутній
AON4420 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A SFN3X2
Description: MOSFET N-CH 30V 10A SFN3X2
товар відсутній
AON4421 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
товар відсутній
AON4421 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
товар відсутній
AON4421_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Description: MOSFET P-CH 30V 8A 8DFN
товар відсутній
AON4605 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
товар відсутній
AON4605_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
товар відсутній
AON4703 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: MOSFET P-CH 20V 3.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
товар відсутній
AON4705L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 8DFN
Description: MOSFET P-CH 20V 4A 8DFN
товар відсутній
AON4803 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3.4A DFN3X2
Description: MOSFET 2P-CH 20V 3.4A DFN3X2
товар відсутній
AON4807 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 4A 8DFN
Description: MOSFET 2P-CH 30V 4A 8DFN
товар відсутній
AON4807_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 4A 8DFN
Description: MOSFET 2P-CH 30V 4A 8DFN
товар відсутній
AON5802A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
товар відсутній
AON5802A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
товар відсутній
AON5802A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
товар відсутній
AON5802ALS |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL DFN
Description: MOSFET N-CH DUAL DFN
товар відсутній
AON5802B |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6DFN
Description: MOSFET 2N-CH 30V 7.2A 6DFN
товар відсутній
AON5802B_101 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL DFN
Description: MOSFET N-CH DUAL DFN
товар відсутній
AON5802BL |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL 30V 6DFN
Description: MOSFET N-CH DUAL 30V 6DFN
товар відсутній
AON5810 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7.7A 6DFN
Description: MOSFET 2N-CH 20V 7.7A 6DFN
товар відсутній
AON5816 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 12A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
Part Status: Active
Description: MOSFET 2N-CH 20V 12A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
Part Status: Active
товар відсутній
AON5820 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 10A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
Description: MOSFET 2N-CH 20V 10A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
товар відсутній
AON5820_101 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 10A 6DFN
Packaging: Bulk
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
Description: MOSFET 2N-CH 20V 10A 6DFN
Packaging: Bulk
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
товар відсутній
AON6104FD |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
Description: MOSFET N-CH 8DFN 5X6
товар відсутній
AON6104FH |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
Description: MOSFET N-CH 8DFN 5X6
товар відсутній
AON6108FD |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
Description: MOSFET N-CH 8DFN 5X6
товар відсутній
AON6108FH |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
Description: MOSFET N-CH 8DFN 5X6
товар відсутній
AON6144 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 48.48 грн |
6000+ | 44.46 грн |
9000+ | 42.41 грн |
AON6144 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
на замовлення 29664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.09 грн |
10+ | 92.4 грн |
100+ | 71.82 грн |
500+ | 57.13 грн |
1000+ | 46.54 грн |
AON6152 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 45V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 22.5 V
Description: MOSFET N-CHANNEL 45V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 22.5 V
товар відсутній
AON6152A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 45V 58A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
Description: MOSFET N-CH 45V 58A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.99 грн |
10+ | 147.67 грн |
100+ | 117.52 грн |
500+ | 93.32 грн |
1000+ | 79.18 грн |