Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BZX85C27-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE Technology: TransZorb® |
на замовлення 1409 шт: термін постачання 21-30 дні (днів) |
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IRF740APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 541 шт: термін постачання 21-30 дні (днів) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1422 шт: термін постачання 21-30 дні (днів) |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1207 шт: термін постачання 21-30 дні (днів) |
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IRF740PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
на замовлення 2486 шт: термін постачання 21-30 дні (днів) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
на замовлення 501 шт: термін постачання 21-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
товару немає в наявності |
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1383 шт: термін постачання 21-30 дні (днів) |
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1.5KE180A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 1726 шт: термін постачання 21-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1835 шт: термін постачання 21-30 дні (днів) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 381 шт: термін постачання 21-30 дні (днів) |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
товару немає в наявності |
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1N4937-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 12pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Leakage current: 0.1mA Reverse recovery time: 200ns |
на замовлення 8380 шт: термін постачання 21-30 дні (днів) |
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1N4937-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 12pF Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Leakage current: 0.1mA Reverse recovery time: 200ns |
товару немає в наявності |
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SB160-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.65V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 6569 шт: термін постачання 21-30 дні (днів) |
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IRLL014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3576 шт: термін постачання 21-30 дні (днів) |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3731 шт: термін постачання 21-30 дні (днів) |
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BZX55C3V6-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 9830 шт: термін постачання 21-30 дні (днів) |
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BZX85C3V6-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.6V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 6510 шт: термін постачання 21-30 дні (днів) |
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1N5401-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Capacitance: 30pF Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Leakage current: 0.5mA |
на замовлення 2902 шт: термін постачання 21-30 дні (днів) |
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1N5404-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Capacitance: 30pF Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Leakage current: 0.5mA |
на замовлення 854 шт: термін постачання 21-30 дні (днів) |
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 4206 шт: термін постачання 21-30 дні (днів) |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: Ammo Pack |
товару немає в наявності |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 6972 шт: термін постачання 21-30 дні (днів) |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: Ammo Pack |
на замовлення 4365 шт: термін постачання 21-30 дні (днів) |
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GL34B-E3/83 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 1.5us; DO213AA,GL34; Ufmax: 1.2V Type of diode: rectifying Max. off-state voltage: 100V Max. forward impulse current: 10A Semiconductor structure: single diode Case: DO213AA; GL34 Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Capacitance: 4pF Reverse recovery time: 1.5µs Load current: 0.5A Max. forward voltage: 1.2V |
на замовлення 8975 шт: термін постачання 21-30 дні (днів) |
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GL34G-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.5A; 1.5us; DO213AA,GL34; Ufmax: 1.2V Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 10A Semiconductor structure: single diode Case: DO213AA; GL34 Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Reverse recovery time: 1.5µs Load current: 0.5A Max. forward voltage: 1.2V |
на замовлення 2479 шт: термін постачання 21-30 дні (днів) |
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BAV99-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 8334 шт: термін постачання 21-30 дні (днів) |
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BAV99-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
товару немає в наявності |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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BPV22NF | VISHAY |
Category: Photodiodes Description: PIN IR photodiode; THT; 940nm; 120° Mounting: THT Viewing angle: 120° Type of photoelement: PIN IR photodiode Wavelength of peak sensitivity: 940nm Active area: 7.5mm2 Reverse light current at 1klx: 85µA |
на замовлення 1676 шт: термін постачання 21-30 дні (днів) |
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SI7850DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 6.2A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 |
на замовлення 2992 шт: термін постачання 21-30 дні (днів) |
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VJ1206Y223KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товару немає в наявності |
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CRCW06033M30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.3MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 6800 шт: термін постачання 21-30 дні (днів) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V |
на замовлення 17913 шт: термін постачання 21-30 дні (днів) |
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VESD05A1-02V-G-08 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 192W Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 1 Version: ESD |
товару немає в наявності |
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SFH615A-4 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-320%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 6µs Turn-off time: 2.5µs |
на замовлення 553 шт: термін постачання 21-30 дні (днів) |
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P6KE15CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
на замовлення 3962 шт: термін постачання 21-30 дні (днів) |
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CRCW25120000Z0THBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5% Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0Ω Power: 1W Tolerance: ±5% |
на замовлення 16670 шт: термін постачання 21-30 дні (днів) |
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IRF730PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1164 шт: термін постачання 21-30 дні (днів) |
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IRF730SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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357B0102MXB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Tolerance: ±20% Power: 1W Potentiometer features: without limiters Characteristics: linear Shaft diameter: 6.35mm Track material: plastic Shaft surface: smooth Shaft length: 14mm Thread length: 8mm L shaft length: 22mm Fastening thread: 3/8"x32UNEF Linearity tolerance: ±2% Potentiometer series: 357 Mechanical durability: 10000000 cycles |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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357B2102MAB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Tolerance: ±20% Power: 1W Characteristics: linear Shaft diameter: 6.35mm Track material: plastic Shaft surface: smooth Shaft length: 14mm Thread length: 8mm L shaft length: 22mm Fastening thread: 3/8"x32UNEF Electrical rotation angle: 340° Linearity tolerance: ±2% Potentiometer series: 357 Mechanical durability: 10000000 cycles |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Mounting: SMD Operating temperature: -55...125°C Dielectric: C0G (NP0) Capacitance: 10pF Operating voltage: 50V Case - mm: 3216 Case - inch: 1206 Tolerance: ±10% Type of capacitor: ceramic |
на замовлення 3590 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 100kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...125°C |
на замовлення 18929 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 100kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 99400 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...125°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
товару немає в наявності |
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CRCW1206100KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 30400 шт: термін постачання 21-30 дні (днів) |
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SFH6156-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 2.3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Type of optocoupler: optocoupler |
на замовлення 1273 шт: термін постачання 21-30 дні (днів) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Case: MiniMELF; SOD80 Features of semiconductor devices: small signal Max. forward voltage: 0.24V Max. load current: 0.3A Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W |
на замовлення 24604 шт: термін постачання 21-30 дні (днів) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 5ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Case: MiniMELF; SOD80 Features of semiconductor devices: small signal Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
на замовлення 11036 шт: термін постачання 21-30 дні (днів) |
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SI4840BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8 Case: SO8 Mounting: SMD On-state resistance: 12mΩ Kind of package: reel; tape Drain current: 9.9A Power dissipation: 6W Drain-source voltage: 40V Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
на замовлення 1861 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistors Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Type of sensor: NTC thermistor Resistance: 4.7kΩ Mounting: THT Material constant B: 3977K Operating temperature: -40...125°C Power: 0.5W |
на замовлення 1110 шт: термін постачання 21-30 дні (днів) |
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P16NP472MAB15 | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet Mounting: soldered Resistance: 4.7kΩ Power: 1W Tolerance: ±20% Operating temperature: -40...85°C Temperature coefficient: 150ppm/°C Leads: solder lugs Panel cutout diameter: 10mm IP rating: IP67 Type of potentiometer: shaft Characteristics: linear Electrical rotation angle: 270° Potentiometer features: for industrial use; with knob Knob dimensions: Ø16x8mm Track material: cermet Kind of potentiometer: single turn |
на замовлення 666 шт: термін постачання 21-30 дні (днів) |
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PA16NP472KAB15 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±10% Power: 0.5W Characteristics: linear Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
товару немає в наявності |
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P6KE30A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; reel,tape; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
на замовлення 1878 шт: термін постачання 21-30 дні (днів) |
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1.5KE47A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 47.05V; 23.1A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 530 шт: термін постачання 21-30 дні (днів) |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1235 шт: термін постачання 21-30 дні (днів) |
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SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
BZX85C27-TAP |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 23.88 грн |
52+ | 7.17 грн |
73+ | 5.12 грн |
100+ | 4.4 грн |
1.5KE400A-E3/54 |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Technology: TransZorb®
на замовлення 1409 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 28.9 грн |
16+ | 24.32 грн |
47+ | 18.7 грн |
127+ | 17.67 грн |
1400+ | 17.37 грн |
IRF740APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 541 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 117.83 грн |
10+ | 85.76 грн |
14+ | 62.1 грн |
39+ | 58.4 грн |
IRF740ASPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1422 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 164.8 грн |
10+ | 101.28 грн |
14+ | 65.8 грн |
36+ | 62.1 грн |
IRF740LCPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1207 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 62.1 грн |
10+ | 54.71 грн |
18+ | 47.31 грн |
50+ | 45.1 грн |
IRF740PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 2486 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 109.87 грн |
10+ | 65.8 грн |
23+ | 39.18 грн |
61+ | 36.96 грн |
IRF740SPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 501 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 177.54 грн |
10+ | 115.33 грн |
12+ | 71.71 грн |
33+ | 67.28 грн |
IRF740STRLPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності
1.5KE18CA-E3/54 |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1383 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 42.99 грн |
11+ | 34.01 грн |
50+ | 17.37 грн |
137+ | 16.41 грн |
1.5KE180A-E3/54 |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 1726 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 25.24 грн |
25+ | 22.03 грн |
49+ | 17.6 грн |
135+ | 16.63 грн |
1400+ | 15.97 грн |
1.5KE180CA-E3/54 |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1835 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 28.42 грн |
16+ | 23.73 грн |
48+ | 18.29 грн |
130+ | 17.29 грн |
1400+ | 17.08 грн |
1.5KE18A-E3/54 |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 381 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 27.63 грн |
25+ | 21.07 грн |
54+ | 16.04 грн |
148+ | 15.16 грн |
P6KE200A-E3/54 |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
товару немає в наявності
1N4937-E3/54 |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
на замовлення 8380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
21+ | 19.11 грн |
28+ | 13.31 грн |
35+ | 10.62 грн |
100+ | 7.09 грн |
338+ | 2.55 грн |
929+ | 2.41 грн |
5500+ | 2.39 грн |
1N4937-E3/73 |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
товару немає в наявності
SB160-E3/54 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 6569 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
21+ | 19.11 грн |
30+ | 12.57 грн |
50+ | 10.28 грн |
100+ | 9.32 грн |
160+ | 5.4 грн |
439+ | 5.1 грн |
5000+ | 4.95 грн |
IRLL014TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3576 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.73 грн |
15+ | 26.24 грн |
56+ | 15.52 грн |
153+ | 14.71 грн |
IRLL110TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3731 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.71 грн |
50+ | 33.64 грн |
54+ | 16.26 грн |
147+ | 15.38 грн |
BZX55C3V6-TAP |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 9830 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
90+ | 4.7 грн |
170+ | 2.24 грн |
500+ | 1.78 грн |
550+ | 1.58 грн |
1490+ | 1.49 грн |
BZX85C3V6-TAP |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 6510 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
70+ | 6.45 грн |
130+ | 2.94 грн |
250+ | 2.62 грн |
360+ | 2.41 грн |
980+ | 2.28 грн |
5000+ | 2.19 грн |
1N5401-E3/54 |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
на замовлення 2902 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 32.64 грн |
15+ | 25.36 грн |
16+ | 24.1 грн |
25+ | 20.26 грн |
100+ | 17.6 грн |
113+ | 7.61 грн |
310+ | 7.24 грн |
1N5404-E3/54 |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
на замовлення 854 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 24.68 грн |
20+ | 18.93 грн |
100+ | 14.49 грн |
118+ | 7.39 грн |
323+ | 6.95 грн |
1N5817-E3/54 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 4206 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 24.68 грн |
22+ | 17.37 грн |
27+ | 14.05 грн |
50+ | 11.46 грн |
100+ | 9.17 грн |
162+ | 5.35 грн |
444+ | 5.05 грн |
1N5817-E3/73 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
товару немає в наявності
1N5819-E3/54 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 6972 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 24.68 грн |
21+ | 18.33 грн |
26+ | 14.49 грн |
100+ | 9.17 грн |
177+ | 4.87 грн |
486+ | 4.61 грн |
5500+ | 4.44 грн |
1N5819-E3/73 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
на замовлення 4365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 13.53 грн |
60+ | 6.43 грн |
100+ | 5.62 грн |
170+ | 5.18 грн |
460+ | 4.9 грн |
3000+ | 4.73 грн |
GL34B-E3/83 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 1.5us; DO213AA,GL34; Ufmax: 1.2V
Type of diode: rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 10A
Semiconductor structure: single diode
Case: DO213AA; GL34
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Reverse recovery time: 1.5µs
Load current: 0.5A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 1.5us; DO213AA,GL34; Ufmax: 1.2V
Type of diode: rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 10A
Semiconductor structure: single diode
Case: DO213AA; GL34
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Reverse recovery time: 1.5µs
Load current: 0.5A
Max. forward voltage: 1.2V
на замовлення 8975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 11.02 грн |
95+ | 9.27 грн |
255+ | 8.77 грн |
GL34G-E3/98 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 1.5us; DO213AA,GL34; Ufmax: 1.2V
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 10A
Semiconductor structure: single diode
Case: DO213AA; GL34
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
Load current: 0.5A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 1.5us; DO213AA,GL34; Ufmax: 1.2V
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 10A
Semiconductor structure: single diode
Case: DO213AA; GL34
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
Load current: 0.5A
Max. forward voltage: 1.2V
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 25.48 грн |
100+ | 10.57 грн |
102+ | 8.46 грн |
280+ | 8 грн |
BAV99-E3-08 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 8334 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
56+ | 7.15 грн |
79+ | 4.73 грн |
92+ | 4.03 грн |
135+ | 2.76 грн |
500+ | 2.01 грн |
652+ | 1.32 грн |
1794+ | 1.24 грн |
BAV99-G3-08 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
товару немає в наявності
BAV99-HE3-08 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 450 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
110+ | 3.66 грн |
125+ | 3.05 грн |
350+ | 2.45 грн |
BPV22NF |
Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 940nm; 120°
Mounting: THT
Viewing angle: 120°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Reverse light current at 1klx: 85µA
Category: Photodiodes
Description: PIN IR photodiode; THT; 940nm; 120°
Mounting: THT
Viewing angle: 120°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Reverse light current at 1klx: 85µA
на замовлення 1676 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 73.25 грн |
10+ | 43.4 грн |
32+ | 27.43 грн |
87+ | 25.88 грн |
SI7850DP-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6.2A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6.2A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
на замовлення 2992 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 121.02 грн |
10+ | 98.32 грн |
17+ | 51.75 грн |
46+ | 48.79 грн |
VJ1206Y223KXBCW1BC |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товару немає в наявності
CRCW06033M30FKTABC |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 6800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 1.78 грн |
500+ | 0.86 грн |
1000+ | 0.51 грн |
3900+ | 0.22 грн |
5000+ | 0.2 грн |
1N4007GP-E3/54 |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
на замовлення 17913 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 30.25 грн |
19+ | 20.26 грн |
25+ | 16.56 грн |
100+ | 14.19 грн |
124+ | 6.95 грн |
339+ | 6.58 грн |
VESD05A1-02V-G-08 |
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 192W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 192W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Version: ESD
товару немає в наявності
SFH615A-4 |
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 2.5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 2.5µs
на замовлення 553 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 50.95 грн |
13+ | 28.61 грн |
20+ | 24.91 грн |
76+ | 11.31 грн |
209+ | 10.65 грн |
P6KE15CA-E3/54 |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
на замовлення 3962 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 23.09 грн |
28+ | 13.31 грн |
81+ | 10.65 грн |
221+ | 10.13 грн |
CRCW25120000Z0THBC |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5%
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0Ω
Power: 1W
Tolerance: ±5%
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5%
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0Ω
Power: 1W
Tolerance: ±5%
на замовлення 16670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 8.28 грн |
110+ | 3.4 грн |
490+ | 1.77 грн |
1350+ | 1.67 грн |
IRF730PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 69.27 грн |
10+ | 47.54 грн |
23+ | 38 грн |
63+ | 35.93 грн |
1000+ | 35.12 грн |
IRF730SPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 67.67 грн |
10+ | 57.66 грн |
19+ | 46.58 грн |
51+ | 43.62 грн |
357B0102MXB251S22 |
Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: without limiters
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Linearity tolerance: ±2%
Potentiometer series: 357
Mechanical durability: 10000000 cycles
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: without limiters
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Linearity tolerance: ±2%
Potentiometer series: 357
Mechanical durability: 10000000 cycles
на замовлення 71 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2074.78 грн |
2+ | 1821.6 грн |
50+ | 1802.38 грн |
357B2102MAB251S22 |
Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Potentiometer series: 357
Mechanical durability: 10000000 cycles
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Potentiometer series: 357
Mechanical durability: 10000000 cycles
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2030.99 грн |
2+ | 1783.16 грн |
VJ1206A100KXAAC |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Capacitance: 10pF
Operating voltage: 50V
Case - mm: 3216
Case - inch: 1206
Tolerance: ±10%
Type of capacitor: ceramic
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Capacitance: 10pF
Operating voltage: 50V
Case - mm: 3216
Case - inch: 1206
Tolerance: ±10%
Type of capacitor: ceramic
на замовлення 3590 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 28.5 грн |
100+ | 10.5 грн |
180+ | 4.84 грн |
490+ | 4.58 грн |
CRCW1206100KFKEA |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...125°C
на замовлення 18929 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
84+ | 4.77 грн |
186+ | 2 грн |
228+ | 1.63 грн |
307+ | 1.21 грн |
500+ | 0.9 грн |
1266+ | 0.68 грн |
3486+ | 0.64 грн |
CRCW1206100KFKTABC |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 99400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 1.52 грн |
600+ | 0.64 грн |
1000+ | 0.5 грн |
3900+ | 0.22 грн |
10600+ | 0.21 грн |
CRCW1206100KJNEA |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
товару немає в наявності
CRCW1206100KJNTABC |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 30400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 1.33 грн |
700+ | 0.61 грн |
1000+ | 0.48 грн |
4500+ | 0.19 грн |
12200+ | 0.18 грн |
SFH6156-3X001T |
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 2.3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 2.3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
на замовлення 1273 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 35.03 грн |
18+ | 21.59 грн |
50+ | 16.56 грн |
77+ | 11.16 грн |
211+ | 10.57 грн |
BAS85-GS08 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Case: MiniMELF; SOD80
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Case: MiniMELF; SOD80
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 24604 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.7 грн |
51+ | 7.32 грн |
100+ | 4.46 грн |
430+ | 2 грн |
1181+ | 1.9 грн |
BAS85-GS18 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Case: MiniMELF; SOD80
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Case: MiniMELF; SOD80
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 11036 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
70+ | 6.01 грн |
110+ | 3.52 грн |
320+ | 2.7 грн |
880+ | 2.55 грн |
SI4840BDY-T1-E3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 12mΩ
Kind of package: reel; tape
Drain current: 9.9A
Power dissipation: 6W
Drain-source voltage: 40V
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 12mΩ
Kind of package: reel; tape
Drain current: 9.9A
Power dissipation: 6W
Drain-source voltage: 40V
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
на замовлення 1861 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 67.67 грн |
9+ | 45.84 грн |
23+ | 38.74 грн |
61+ | 36.59 грн |
500+ | 35.26 грн |
NTCLE100E3472JB0 |
Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
на замовлення 1110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 35.83 грн |
17+ | 22.62 грн |
46+ | 18.7 грн |
127+ | 17.74 грн |
500+ | 17 грн |
P16NP472MAB15 |
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet
Mounting: soldered
Resistance: 4.7kΩ
Power: 1W
Tolerance: ±20%
Operating temperature: -40...85°C
Temperature coefficient: 150ppm/°C
Leads: solder lugs
Panel cutout diameter: 10mm
IP rating: IP67
Type of potentiometer: shaft
Characteristics: linear
Electrical rotation angle: 270°
Potentiometer features: for industrial use; with knob
Knob dimensions: Ø16x8mm
Track material: cermet
Kind of potentiometer: single turn
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet
Mounting: soldered
Resistance: 4.7kΩ
Power: 1W
Tolerance: ±20%
Operating temperature: -40...85°C
Temperature coefficient: 150ppm/°C
Leads: solder lugs
Panel cutout diameter: 10mm
IP rating: IP67
Type of potentiometer: shaft
Characteristics: linear
Electrical rotation angle: 270°
Potentiometer features: for industrial use; with knob
Knob dimensions: Ø16x8mm
Track material: cermet
Kind of potentiometer: single turn
на замовлення 666 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 778.64 грн |
2+ | 527.85 грн |
5+ | 499.02 грн |
PA16NP472KAB15 |
Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
товару немає в наявності
P6KE30A-E3/54 |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
на замовлення 1878 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 27.63 грн |
29+ | 13.16 грн |
87+ | 9.97 грн |
237+ | 9.43 грн |
1.5KE47A-E3/54 |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 47.05V; 23.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 47.05V; 23.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 530 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 25.48 грн |
25+ | 21.22 грн |
50+ | 17.52 грн |
136+ | 16.63 грн |
1.5KE47CA-E3/54 |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1235 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.55 грн |
50+ | 17.3 грн |
137+ | 16.34 грн |
SIHA25N50E-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності