Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (10976) > Сторінка 84 з 183
| Фото | Назва | Виробник | Інформація |
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SIZ720DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 20V 16A 6POWERPAIRPackaging: Tape & Reel (TR) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-PowerPair™ |
товару немає в наявності |
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SMMA511DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 12V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.5W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
товару немає в наявності |
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| SMMB911DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.6A SC75-6L Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6L Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6L Dual |
товару немає в наявності |
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SQ2308ES-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 60V TO236 |
товару немає в наявності |
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SQ3442EV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 4.3A 6TSOP |
товару немає в наявності |
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| SQ3456EV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 30V 6TSOP |
товару немає в наявності |
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SQ4401DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 15.8A 8SOIC |
товару немає в наявності |
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SQ4410EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 15A 8SOIC |
товару немає в наявності |
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SQ4431EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 10.8A 8SOIC |
товару немає в наявності |
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SQ4470EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 16A 8SOIC |
товару немає в наявності |
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SQ4840EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 20.7A 8SOIC |
товару немає в наявності |
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SQ4850EY-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 12A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V Power Dissipation (Max): 6.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SQ4936EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 7A 8SOIC |
товару немає в наявності |
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SQ4942EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC |
товару немає в наявності |
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SQ4946EY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
товару немає в наявності |
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SQ7002K-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 320MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V |
товару немає в наявності |
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SQ7414EN-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8 |
товару немає в наявності |
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SQ7415EN-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 3.6A PPAK 1212-8 |
товару немає в наявності |
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SQ9945AEY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 3.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
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SQD15N06-42L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 15A TO252 |
товару немає в наявності |
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SQD19P06-60L_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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SQD23N06-31L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 23A TO252 |
товару немає в наявності |
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SQD25N06-22L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 25A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V |
товару немає в наявності |
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| SQD25N06-35L-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 60V 25A TO252 |
товару немає в наявності |
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SQD25N15-52_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 25A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SQD35N05-26L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 55V 30A TO252 |
товару немає в наявності |
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SQD40N04-10A-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V 42A TO252 |
товару немає в наявності |
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SQD40N06-25L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
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SQD40N10-25_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V |
товару немає в наявності |
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SQD45N05-20L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 50V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
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SQD45P03-12_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SQD50N02-04-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 20V 50A TO252 |
товару немає в наявності |
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SQD50N03-06P-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 30V 50A TO252 |
товару немає в наявності |
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SQD50N03-09-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 30V 50A TO252 |
товару немає в наявності |
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SQD50N06-07L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO252 |
товару немає в наявності |
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SQD50N06-09L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO252 |
товару немає в наявності |
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SQD50P04-09L-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 |
товару немає в наявності |
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SQD50P04-13L-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 |
товару немає в наявності |
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SQD50P06-15L_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V |
товару немає в наявності |
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SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
товару немає в наявності |
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SQJ456EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 32A PPAK SO-8 |
товару немає в наявності |
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SQJ461EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 30A 8-SO |
товару немає в наявності |
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SQJ463EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 30A PPAK SO-8 |
товару немає в наявності |
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SQJ469EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 80V 32A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SQJ840EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK SO-8 |
товару немає в наявності |
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SQJ844EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC |
товару немає в наявності |
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SQJ848EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V PPAK 8SOIC |
товару немає в наявності |
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SQJ850EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 24A PPAK SO-8 |
товару немає в наявності |
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SQJ941EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 8A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SQJ964EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SOIC |
товару немає в наявності |
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SQJ970EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC |
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SQM110N04-02L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V TO263 |
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SQM110N04-03-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V TO263 |
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SQM110N04-03L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V TO263 |
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SQM110N04-04-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V TO263 |
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SQM110N05-06L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 55V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
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SQM110N06-04L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 60V TO263 |
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SQM110N06-06-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 60V TO263 |
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SQM110N08-05-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 75V TO263 |
товару немає в наявності |
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SQM110N10-09-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 100V TO263 |
товару немає в наявності |
| SIZ720DT-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
товару немає в наявності
| SMMA511DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
товару немає в наявності
| SMMB911DK-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
товару немає в наявності
| SQ2308ES-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO236
Description: MOSFET N-CH D-S 60V TO236
товару немає в наявності
| SQ3442EV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Description: MOSFET N-CH 20V 4.3A 6TSOP
товару немає в наявності
| SQ3456EV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 6TSOP
Description: MOSFET N-CH D-S 30V 6TSOP
товару немає в наявності
| SQ4401DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 15.8A 8SOIC
Description: MOSFET P-CH 40V 15.8A 8SOIC
товару немає в наявності
| SQ4410EY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Description: MOSFET N-CH 30V 15A 8SOIC
товару немає в наявності
| SQ4431EY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 10.8A 8SOIC
Description: MOSFET P-CH 30V 10.8A 8SOIC
товару немає в наявності
| SQ4470EY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SOIC
Description: MOSFET N-CH 60V 16A 8SOIC
товару немає в наявності
| SQ4840EY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SOIC
Description: MOSFET N-CH 40V 20.7A 8SOIC
товару немає в наявності
| SQ4850EY-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 38.34 грн |
| 5000+ | 35.16 грн |
| 12500+ | 33.54 грн |
| SQ4936EY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7A 8SOIC
Description: MOSFET 2N-CH 30V 7A 8SOIC
товару немає в наявності
| SQ4942EY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Description: MOSFET 2N-CH 40V 8A 8SOIC
товару немає в наявності
| SQ4946EY-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
товару немає в наявності
| SQ7002K-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 320MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
Description: MOSFET N-CH 60V 320MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
товару немає в наявності
| SQ7414EN-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
товару немає в наявності
| SQ7415EN-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
товару немає в наявності
| SQ9945AEY-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
| SQD15N06-42L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 15A TO252
Description: MOSFET N-CH 60V 15A TO252
товару немає в наявності
| SQD19P06-60L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 44.99 грн |
| SQD23N06-31L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 23A TO252
Description: MOSFET N-CH 60V 23A TO252
товару немає в наявності
| SQD25N06-22L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
товару немає в наявності
| SQD25N06-35L-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V 25A TO252
Description: MOSFET N-CH D-S 60V 25A TO252
товару немає в наявності
| SQD25N15-52_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 126.4 грн |
| SQD35N05-26L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252
Description: MOSFET N-CH 55V 30A TO252
товару немає в наявності
| SQD40N04-10A-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V 42A TO252
Description: MOSFET N-CH D-S 40V 42A TO252
товару немає в наявності
| SQD40N06-25L-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
| SQD40N10-25_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Description: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
товару немає в наявності
| SQD45N05-20L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 50V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 50V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
| SQD45P03-12_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 52.98 грн |
| SQD50N02-04-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 20V 50A TO252
Description: MOSFET N-CH D-S 20V 50A TO252
товару немає в наявності
| SQD50N03-06P-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
Description: MOSFET N-CH D-S 30V 50A TO252
товару немає в наявності
| SQD50N03-09-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
Description: MOSFET N-CH D-S 30V 50A TO252
товару немає в наявності
| SQD50N06-07L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Description: MOSFET N-CH 60V 50A TO252
товару немає в наявності
| SQD50N06-09L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Description: MOSFET N-CH 60V 50A TO252
товару немає в наявності
| SQD50P04-09L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Description: MOSFET P-CH 40V 50A TO252
товару немає в наявності
| SQD50P04-13L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Description: MOSFET P-CH 40V 50A TO252
товару немає в наявності
| SQD50P06-15L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
Description: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
товару немає в наявності
| SQJ412EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
товару немає в наявності
| SQJ456EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 32A PPAK SO-8
Description: MOSFET N-CH 100V 32A PPAK SO-8
товару немає в наявності
| SQJ461EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 30A 8-SO
Description: MOSFET P-CH 60V 30A 8-SO
товару немає в наявності
| SQJ463EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 30A PPAK SO-8
Description: MOSFET P-CH 40V 30A PPAK SO-8
товару немає в наявності
| SQJ469EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 90.56 грн |
| SQJ840EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Description: MOSFET N-CH 30V 30A PPAK SO-8
товару немає в наявності
| SQJ844EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
товару немає в наявності
| SQJ848EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V PPAK 8SOIC
Description: MOSFET N-CH D-S 40V PPAK 8SOIC
товару немає в наявності
| SQJ850EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 24A PPAK SO-8
Description: MOSFET N-CH 60V 24A PPAK SO-8
товару немає в наявності
| SQJ941EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
| SQJ964EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SOIC
Description: MOSFET 2N-CH 60V 8A 8SOIC
товару немає в наявності
| SQJ970EP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Description: MOSFET 2N-CH 40V 8A 8SOIC
товару немає в наявності
| SQM110N04-02L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
Description: MOSFET N-CH D-S 40V TO263
товару немає в наявності
| SQM110N04-03-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
Description: MOSFET N-CH D-S 40V TO263
товару немає в наявності
| SQM110N04-03L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
Description: MOSFET N-CH D-S 40V TO263
товару немає в наявності
| SQM110N04-04-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
Description: MOSFET N-CH D-S 40V TO263
товару немає в наявності
| SQM110N05-06L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
товару немає в наявності
| SQM110N06-04L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO263
Description: MOSFET N-CH D-S 60V TO263
товару немає в наявності
| SQM110N06-06-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO263
Description: MOSFET N-CH D-S 60V TO263
товару немає в наявності
| SQM110N08-05-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO263
Description: MOSFET N-CH D-S 75V TO263
товару немає в наявності
| SQM110N10-09-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO263
Description: MOSFET N-CH D-S 100V TO263
товару немає в наявності