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SE10DGHM3/I Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 64.83 грн |
10+ | 53.87 грн |
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Технічний опис SE10DGHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 67pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-263AC (SMPD), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A, Current - Reverse Leakage @ Vr: 15 µA @ 400 V, Qualification: AEC-Q101.
Інші пропозиції SE10DGHM3/I
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SE10DGHM3/I | Виробник : Vishay Semiconductors |
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на замовлення 3498 шт: термін постачання 21-30 дні (днів) |
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SE10DGHM3/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 67pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V Qualification: AEC-Q101 |
товар відсутній |
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SE10DGHM3/I | Виробник : Vishay General Semiconductor |
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товар відсутній |