Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23436) > Сторінка 235 з 391

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HERA808G Taiwan Semiconductor Corporation HERA801G SERIES_J2103.pdf Description: DIODE GEN PURP 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)
5+70.86 грн
50+ 54.95 грн
100+ 43.56 грн
500+ 34.65 грн
1000+ 28.22 грн
Мінімальне замовлення: 5
HERAF808G HERAF808G Taiwan Semiconductor Corporation HERAF801G SERIES_K2105.pdf Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
5+71.62 грн
50+ 55.27 грн
100+ 43.8 грн
500+ 34.84 грн
Мінімальне замовлення: 5
HS1DAL HS1DAL Taiwan Semiconductor Corporation pdf.php?pn=HS1DAL Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS1DAL HS1DAL Taiwan Semiconductor Corporation pdf.php?pn=HS1DAL Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6988 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.8 грн
1000+ 6.85 грн
2000+ 6.13 грн
5000+ 5.9 грн
Мінімальне замовлення: 10
HS1JAL HS1JAL Taiwan Semiconductor Corporation pdf.php?pn=HS1JAL Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS1JAL HS1JAL Taiwan Semiconductor Corporation pdf.php?pn=HS1JAL Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6145 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.8 грн
1000+ 6.85 грн
2000+ 6.13 грн
5000+ 5.9 грн
Мінімальне замовлення: 10
HS1GAL HS1GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS1GAL HS1GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
11+29.4 грн
15+ 20.25 грн
100+ 10.22 грн
500+ 8.5 грн
1000+ 6.62 грн
2000+ 5.92 грн
5000+ 5.69 грн
Мінімальне замовлення: 11
HS2JFS HS2JFS Taiwan Semiconductor Corporation pdf.php?pn=HS2JFS Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JFS HS2JFS Taiwan Semiconductor Corporation pdf.php?pn=HS2JFS Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
15+ 20.25 грн
100+ 12.14 грн
500+ 10.55 грн
1000+ 7.17 грн
2000+ 6.6 грн
5000+ 6.23 грн
Мінімальне замовлення: 12
HS2GAL HS2GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2GAL HS2GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2DAL HS2DAL Taiwan Semiconductor Corporation pdf.php?pn=HS2DAL Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS2DAL HS2DAL Taiwan Semiconductor Corporation pdf.php?pn=HS2DAL Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
15+ 20.25 грн
100+ 12.14 грн
500+ 10.55 грн
1000+ 7.17 грн
2000+ 6.6 грн
5000+ 6.23 грн
Мінімальне замовлення: 12
HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3425 шт:
термін постачання 21-31 дні (днів)
13+24.88 грн
16+ 18.95 грн
100+ 11.37 грн
500+ 9.88 грн
1000+ 6.72 грн
Мінімальне замовлення: 13
HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
11+27.89 грн
16+ 18.8 грн
100+ 9.5 грн
500+ 7.27 грн
1000+ 5.39 грн
Мінімальне замовлення: 11
HS1KAL HS1KAL Taiwan Semiconductor Corporation pdf.php?pn=HS1KAL Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KAL HS1KAL Taiwan Semiconductor Corporation pdf.php?pn=HS1KAL Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
15+ 20.18 грн
100+ 10.21 грн
500+ 7.81 грн
1000+ 5.8 грн
2000+ 4.88 грн
5000+ 4.59 грн
Мінімальне замовлення: 10
HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.3 грн
5000+ 6.05 грн
Мінімальне замовлення: 10
HS2KAL HS2KAL Taiwan Semiconductor Corporation pdf.php?pn=HS2KAL Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KAL HS2KAL Taiwan Semiconductor Corporation pdf.php?pn=HS2KAL Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
15+ 20.69 грн
100+ 10.42 грн
500+ 8.67 грн
1000+ 6.75 грн
2000+ 6.04 грн
Мінімальне замовлення: 10
HERAF1606G HERAF1606G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
4+78.4 грн
50+ 60.72 грн
100+ 48.11 грн
500+ 38.27 грн
1000+ 31.18 грн
Мінімальне замовлення: 4
BZX584B13 RKG BZX584B13 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 13V 150MW SOD523F
товар відсутній
BZX584B6V2 RKG BZX584B6V2 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.2V 150MW SOD523F
товар відсутній
BZX584B10 RKG BZX584B10 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 10V 150MW SOD523F
товар відсутній
BZX584B9V1 RSG BZX584B9V1 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B5V1 RKG BZX584B5V1 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B4V7 RKG BZX584B4V7 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 4.7V 150MW SOD523F
товар відсутній
BZX584B5V6 RSG BZX584B5V6 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.6V 150MW SOD523F
товар відсутній
BZX584B8V2 RSG BZX584B8V2 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B6V8 RKG BZX584B6V8 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B9V1 RKG BZX584B9V1 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B7V5 RSG BZX584B7V5 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 7.5V 150MW SOD523F
товар відсутній
BZX584B11 RKG BZX584B11 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 11V 150MW SOD523F
товар відсутній
BZX584B8V2 RKG BZX584B8V2 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B5V1 RSG BZX584B5V1 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B12 RKG BZX584B12 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 12V 150MW SOD523F
товар відсутній
BZX584B15 RKG BZX584B15 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 15V 150MW SOD523F
товар відсутній
BZX584B6V8 RSG BZX584B6V8 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B16 RKG BZX584B16 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 16V 150MW SOD523F
товар відсутній
BZX584B20 RKG BZX584B20 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 20V 150MW SOD523F
товар відсутній
BZX584B5V6 RKG BZX584B5V6 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.6V 150MW SOD523F
товар відсутній
BZX584B7V5 RKG BZX584B7V5 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 7.5V 150MW SOD523F
товар відсутній
1.5KE91CAH 1.5KE91CAH Taiwan Semiconductor Corporation Description: TVS DIODE 77.8VWM 125VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ150AH SMAJ150AH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TST40L120CW TST40L120CW Taiwan Semiconductor Corporation TST40L100CW-TST40L200CW%20C2104.pdf Description: DIODE SCHOTTKY 120V 20A TO220AB
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
2+213.35 грн
10+ 184.1 грн
100+ 148 грн
500+ 114.11 грн
Мінімальне замовлення: 2
TS20P06G TS20P06G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1119 шт:
термін постачання 21-31 дні (днів)
3+104.79 грн
15+ 83.97 грн
105+ 66.83 грн
510+ 53.07 грн
1005+ 45.03 грн
Мінімальне замовлення: 3
P6SMB18AH P6SMB18AH Taiwan Semiconductor Corporation Description: TVS DIODE 15.3VWM 25.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.92 грн
Мінімальне замовлення: 3000
SFA801G C0G SFA801G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
товар відсутній
SFA802GHC0G SFA802GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 100V 8A TO220AC
товар відсутній
SFA803G C0G SFA803G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 150V 8A TO220AC
товар відсутній
SFA805G C0G SFA805G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 300V 8A TO220AC
товар відсутній
SFA806GHC0G SFA806GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 400V 8A TO220AC
товар відсутній
SFA808GHC0G SFA808GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
товар відсутній
SFA801GHC0G SFA801GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 8A TO220AC
товар відсутній
SFA803GHC0G SFA803GHC0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 150V 8A TO220AC
товар відсутній
SFA807G C0G SFA807G C0G Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
HERA808G HERA801G SERIES_J2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+70.86 грн
50+ 54.95 грн
100+ 43.56 грн
500+ 34.65 грн
1000+ 28.22 грн
Мінімальне замовлення: 5
HERAF808G HERAF801G SERIES_K2105.pdf
HERAF808G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.62 грн
50+ 55.27 грн
100+ 43.8 грн
500+ 34.84 грн
Мінімальне замовлення: 5
HS1DAL pdf.php?pn=HS1DAL
HS1DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS1DAL pdf.php?pn=HS1DAL
HS1DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.8 грн
1000+ 6.85 грн
2000+ 6.13 грн
5000+ 5.9 грн
Мінімальне замовлення: 10
HS1JAL pdf.php?pn=HS1JAL
HS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS1JAL pdf.php?pn=HS1JAL
HS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.8 грн
1000+ 6.85 грн
2000+ 6.13 грн
5000+ 5.9 грн
Мінімальне замовлення: 10
HS1GAL
HS1GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS1GAL
HS1GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.4 грн
15+ 20.25 грн
100+ 10.22 грн
500+ 8.5 грн
1000+ 6.62 грн
2000+ 5.92 грн
5000+ 5.69 грн
Мінімальне замовлення: 11
HS2JFS pdf.php?pn=HS2JFS
HS2JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JFS pdf.php?pn=HS2JFS
HS2JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
15+ 20.25 грн
100+ 12.14 грн
500+ 10.55 грн
1000+ 7.17 грн
2000+ 6.6 грн
5000+ 6.23 грн
Мінімальне замовлення: 12
HS2GAL
HS2GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2GAL
HS2GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2DAL pdf.php?pn=HS2DAL
HS2DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS2DAL pdf.php?pn=HS2DAL
HS2DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
15+ 20.25 грн
100+ 12.14 грн
500+ 10.55 грн
1000+ 7.17 грн
2000+ 6.6 грн
5000+ 6.23 грн
Мінімальне замовлення: 12
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.88 грн
16+ 18.95 грн
100+ 11.37 грн
500+ 9.88 грн
1000+ 6.72 грн
Мінімальне замовлення: 13
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.89 грн
16+ 18.8 грн
100+ 9.5 грн
500+ 7.27 грн
1000+ 5.39 грн
Мінімальне замовлення: 11
HS1KAL pdf.php?pn=HS1KAL
HS1KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KAL pdf.php?pn=HS1KAL
HS1KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
15+ 20.18 грн
100+ 10.21 грн
500+ 7.81 грн
1000+ 5.8 грн
2000+ 4.88 грн
5000+ 4.59 грн
Мінімальне замовлення: 10
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.3 грн
5000+ 6.05 грн
Мінімальне замовлення: 10
HS2KAL pdf.php?pn=HS2KAL
HS2KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KAL pdf.php?pn=HS2KAL
HS2KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
15+ 20.69 грн
100+ 10.42 грн
500+ 8.67 грн
1000+ 6.75 грн
2000+ 6.04 грн
Мінімальне замовлення: 10
HERAF1606G
HERAF1606G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+78.4 грн
50+ 60.72 грн
100+ 48.11 грн
500+ 38.27 грн
1000+ 31.18 грн
Мінімальне замовлення: 4
BZX584B13 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B13 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 150MW SOD523F
товар відсутній
BZX584B6V2 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V2 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
товар відсутній
BZX584B10 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B10 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 150MW SOD523F
товар відсутній
BZX584B9V1 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B9V1 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B5V1 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B4V7 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B4V7 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 150MW SOD523F
товар відсутній
BZX584B5V6 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V6 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW SOD523F
товар відсутній
BZX584B8V2 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B8V2 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B6V8 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B9V1 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B9V1 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B7V5 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B7V5 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
товар відсутній
BZX584B11 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B11 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 150MW SOD523F
товар відсутній
BZX584B8V2 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B8V2 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B5V1 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B12 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B12 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 150MW SOD523F
товар відсутній
BZX584B15 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B15 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 150MW SOD523F
товар відсутній
BZX584B6V8 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B16 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B16 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 150MW SOD523F
товар відсутній
BZX584B20 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B20 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 150MW SOD523F
товар відсутній
BZX584B5V6 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V6 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW SOD523F
товар відсутній
BZX584B7V5 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B7V5 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
товар відсутній
1.5KE91CAH
1.5KE91CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ150AH SMAJH SERIES_A2102.pdf
SMAJ150AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
TST40L120CW TST40L100CW-TST40L200CW%20C2104.pdf
TST40L120CW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 20A TO220AB
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+213.35 грн
10+ 184.1 грн
100+ 148 грн
500+ 114.11 грн
Мінімальне замовлення: 2
TS20P06G
TS20P06G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+104.79 грн
15+ 83.97 грн
105+ 66.83 грн
510+ 53.07 грн
1005+ 45.03 грн
Мінімальне замовлення: 3
P6SMB18AH
P6SMB18AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.92 грн
Мінімальне замовлення: 3000
SFA801G C0G SFA801G%20SERIES_K2103.pdf
SFA801G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
товар відсутній
SFA802GHC0G SFA801G%20SERIES_K2103.pdf
SFA802GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
товар відсутній
SFA803G C0G SFA801G%20SERIES_K2103.pdf
SFA803G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
товар відсутній
SFA805G C0G SFA801G%20SERIES_K2103.pdf
SFA805G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
товар відсутній
SFA806GHC0G SFA801G%20SERIES_K2103.pdf
SFA806GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
товар відсутній
SFA808GHC0G SFA801G%20SERIES_K2103.pdf
SFA808GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
товар відсутній
SFA801GHC0G SFA801G%20SERIES_K2103.pdf
SFA801GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
товар відсутній
SFA803GHC0G SFA801G%20SERIES_K2103.pdf
SFA803GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
товар відсутній
SFA807G C0G SFA801G%20SERIES_K2103.pdf
SFA807G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
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