Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23436) > Сторінка 236 з 391
Фото | Назва | Виробник | Інформація |
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SFA807GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
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SFA802G C0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 8A TO220AC |
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SFA805GHC0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 8A TO220AC |
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SFA806G C0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 8A TO220AC |
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SFA806G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 8A TO220AC |
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PGSMAJ10CA F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AC Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 23.5A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete |
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SK14BH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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SMCJ33CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 29A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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SMCJ33CA M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
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TSM260P02CX RFG | Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TSM260P02CX RFG | Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
на замовлення 18102 шт: термін постачання 21-31 дні (днів) |
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TSM2323CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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TSM2323CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
на замовлення 76040 шт: термін постачання 21-31 дні (днів) |
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TSUP10M45SH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1099pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Qualification: AEC-Q101 |
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TSUP10M45SH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1099pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MTZJ20SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 19.73V 500MW DO34 |
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MTZJ9V1SB R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.79V 500MW DO34 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AG, DO-34, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.79 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-34 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
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MTZJ4V3SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 4.44V 500MW DO34 |
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MTZJ10SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 9.36V 500MW DO34 |
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MTZJ2V2SB R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.32V 500MW DO34 |
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MTZJ4V3SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 4.17V 500MW DO34 |
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MTZJ20SB R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 19.11V 500MW DO34 |
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MTZJ12SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 12.05V 500MW DO34 |
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MTZJ7V5SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 7.48V 500MW DO34 |
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MTZJ2V2SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.21V 500MW DO34 |
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MTZJ16SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 16.1V 500MW DO34 |
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MTZJ15SB R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 14.26V 500MW DO34 |
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MTZJ22SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 21.63V 500MW DO34 |
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MTZJ2V4SB R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.53V 500MW DO34 |
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MTZJ6V2SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 5.94V 500MW DO34 |
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MTZJ2V4SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 2.43V 500MW DO34 |
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MTZJ11SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 11.1V 500MW DO34 |
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MBRF1060CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 60V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
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SMDJ60CA R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60CAHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60CA M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60CAHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60AHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60CAH | Taiwan Semiconductor Corporation | Description: TVS DIODE 60VWM 96.8VC DO214AB |
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SMDJ60AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 60VWM 96.8VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96.8V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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5.0SMDJ64AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64VWM 103VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 48.6A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
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5.0SMDJ64AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64VWM 103VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 48.6A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 1499 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ64AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
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5.0SMDJ64AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
на замовлення 1175 шт: термін постачання 21-31 дні (днів) |
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SMDJ64A R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
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SMDJ64A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
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SMDJ64AHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
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SMDJ64AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
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SMDJ64CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64VWM 103VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 29.1A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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SMDJ64AH | Taiwan Semiconductor Corporation | Description: TVS DIODE 64VWM 103VC DO214AB |
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5.0SMDJ54AH | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ54AH | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
на замовлення 5793 шт: термін постачання 21-31 дні (днів) |
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5.0SMDJ54AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
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5.0SMDJ54AHM6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
на замовлення 1020 шт: термін постачання 21-31 дні (днів) |
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SMDJ54A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
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SMDJ54CA R7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
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SMDJ54CA M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 54VWM 87.1VC DO214AB |
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SFA807GHC0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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SFA802G C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Description: DIODE GEN PURP 100V 8A TO220AC
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SFA805GHC0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Description: DIODE GEN PURP 300V 8A TO220AC
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SFA806G C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Description: DIODE GEN PURP 400V 8A TO220AC
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SFA806G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Description: DIODE GEN PURP 400V 8A TO220AC
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PGSMAJ10CA F4G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 10VWM 17VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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SK14BH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMCJ33CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMCJ33CA M6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
TSM260P02CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 12.42 грн |
6000+ | 11.35 грн |
9000+ | 10.54 грн |
TSM260P02CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
на замовлення 18102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.19 грн |
10+ | 30.34 грн |
100+ | 21.08 грн |
500+ | 15.45 грн |
1000+ | 12.56 грн |
TSM2323CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 20.76 грн |
6000+ | 18.94 грн |
9000+ | 17.54 грн |
30000+ | 16.3 грн |
TSM2323CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
на замовлення 76040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.03 грн |
10+ | 45.66 грн |
100+ | 31.56 грн |
500+ | 24.75 грн |
1000+ | 21.07 грн |
TSUP10M45SH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
товар відсутній
TSUP10M45SH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.28 грн |
10+ | 45.15 грн |
100+ | 31.27 грн |
500+ | 24.52 грн |
1000+ | 20.87 грн |
2000+ | 18.59 грн |
MTZJ20SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 19.73V 500MW DO34
Description: DIODE ZENER 19.73V 500MW DO34
товар відсутній
MTZJ9V1SB R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.79V 500MW DO34
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.79 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 8.79V 500MW DO34
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.79 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-34
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
товар відсутній
MTZJ4V3SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.44V 500MW DO34
Description: DIODE ZENER 4.44V 500MW DO34
товар відсутній
MTZJ10SA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.36V 500MW DO34
Description: DIODE ZENER 9.36V 500MW DO34
товар відсутній
MTZJ2V2SB R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.32V 500MW DO34
Description: DIODE ZENER 2.32V 500MW DO34
товар відсутній
MTZJ4V3SA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.17V 500MW DO34
Description: DIODE ZENER 4.17V 500MW DO34
товар відсутній
MTZJ20SB R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 19.11V 500MW DO34
Description: DIODE ZENER 19.11V 500MW DO34
товар відсутній
MTZJ12SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12.05V 500MW DO34
Description: DIODE ZENER 12.05V 500MW DO34
товар відсутній
MTZJ7V5SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.48V 500MW DO34
Description: DIODE ZENER 7.48V 500MW DO34
товар відсутній
MTZJ2V2SA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.21V 500MW DO34
Description: DIODE ZENER 2.21V 500MW DO34
товар відсутній
MTZJ16SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16.1V 500MW DO34
Description: DIODE ZENER 16.1V 500MW DO34
товар відсутній
MTZJ15SB R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.26V 500MW DO34
Description: DIODE ZENER 14.26V 500MW DO34
товар відсутній
MTZJ22SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 21.63V 500MW DO34
Description: DIODE ZENER 21.63V 500MW DO34
товар відсутній
MTZJ2V4SB R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.53V 500MW DO34
Description: DIODE ZENER 2.53V 500MW DO34
товар відсутній
MTZJ6V2SA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.94V 500MW DO34
Description: DIODE ZENER 5.94V 500MW DO34
товар відсутній
MTZJ2V4SA R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.43V 500MW DO34
Description: DIODE ZENER 2.43V 500MW DO34
товар відсутній
MTZJ11SC R0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11.1V 500MW DO34
Description: DIODE ZENER 11.1V 500MW DO34
товар відсутній
MBRF1060CTH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SMDJ60CA R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60A M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60A R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60CAHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60CA M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60CAHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60AHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
товар відсутній
SMDJ60AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5.0SMDJ64AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
5.0SMDJ64AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 48.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 1499 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 153.79 грн |
10+ | 122.9 грн |
100+ | 97.86 грн |
500+ | 77.71 грн |
1000+ | 65.94 грн |
5.0SMDJ64AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
5.0SMDJ64AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
на замовлення 1175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 248.02 грн |
10+ | 214.81 грн |
100+ | 176.01 грн |
500+ | 140.61 грн |
1000+ | 118.59 грн |
SMDJ64A R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
SMDJ64A M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
SMDJ64AHR7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
SMDJ64AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
SMDJ64CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29.1A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29.1A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMDJ64AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
5.0SMDJ54AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 103.1 грн |
5.0SMDJ54AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 5793 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 202.79 грн |
10+ | 175.39 грн |
100+ | 140.98 грн |
500+ | 108.7 грн |
1000+ | 90.06 грн |
5.0SMDJ54AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
товар відсутній
5.0SMDJ54AHM6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 1020 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 248.02 грн |
10+ | 214.81 грн |
100+ | 176.01 грн |
500+ | 140.61 грн |
1000+ | 118.59 грн |
SMDJ54A M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
товар відсутній
SMDJ54CA R7G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
товар відсутній
SMDJ54CA M6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Description: TVS DIODE 54VWM 87.1VC DO214AB
товар відсутній