Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23441) > Сторінка 159 з 391

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KBL601G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G KBL602G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G KBL604G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G KBL605G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)
SFS1602G MNG SFS1602G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG SFS1602GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
SFT17G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 500V 1A TS-1
товар відсутній
TSS70L RWG Taiwan Semiconductor Corporation TSS70L_B14.pdf Description: DIODE SCHOTTKY 70V 70MA 1005
товар відсутній
TSS70U RGG TSS70U RGG Taiwan Semiconductor Corporation TSS70U_C1601.pdf Description: DIODE SCHOTTKY 70V 70MA 0603
товар відсутній
P6SMB16A M4G P6SMB16A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 13.6V 22.5V DO214AA
товар відсутній
BZD27C51PHRQG BZD27C51PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRVG BZD27C51PHRVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRHG BZD27C51PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZD27C51PHM2G BZD27C51PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMHG BZD27C51PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMQG BZD27C51PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMTG BZD27C51PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRTG BZD27C51PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRFG BZD27C51PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRUG BZD27C51PHRUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
1SMA4747 R3G 1SMA4747 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 20V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1SMA4751 R3G 1SMA4751 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 30V 1.25W DO214AC
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
1SMA4749 R3G 1SMA4749 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 24V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
товар відсутній
1M150Z R0G 1M150Z R0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 150V 1W DO204AL
товар відсутній
1M160Z R0G 1M160Z R0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 160V 1W DO204AL
товар відсутній
1M200Z R0G 1M200Z R0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 200V 1W DO204AL
товар відсутній
1SMA4738 R3G 1SMA4738 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1SMA4737HR3G 1SMA4737HR3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 7.5V 1.25W DO214AC
товар відсутній
1SMA4738HR3G 1SMA4738HR3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
товар відсутній
1SMA4739HR3G 1SMA4739HR3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 9.1V 1.25W DO214AC
товар відсутній
1SMA4740HR3G 1SMA4740HR3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_O15.pdf Description: DIODE ZENER 10V 1.25W DO214AC
товар відсутній
1SMA4742 R3G 1SMA4742 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 12V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1SMA4742 R3G 1SMA4742 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 12V 1.25W DO214AC
на замовлення 3017 шт:
термін постачання 21-31 дні (днів)
1SMA4743 R3G 1SMA4743 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 13V 1.25W DO214AC
товар відсутній
1M110Z R0G 1M110Z R0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 110V 1W DO204AL
товар відсутній
1M130Z R0G 1M130Z R0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 130V 1W DO204AL
товар відсутній
1.5KE9.1CA R0G 1.5KE9.1CA R0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 7.78VWM 13.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 117A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1SMA4753 R3G 1SMA4753 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+10.29 грн
Мінімальне замовлення: 1800
1SMA4753 R3G 1SMA4753 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
на замовлення 2082 шт:
термін постачання 21-31 дні (днів)
10+32.81 грн
12+ 25.86 грн
100+ 17.61 грн
500+ 12.4 грн
Мінімальне замовлення: 10
BZX585B39 RSG BZX585B39 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 39V 200MW SOD523F
товар відсутній
LL4002G L0 Taiwan Semiconductor Corporation LL4001G%20SERIES_E15.pdf Description: DIODE GEN PURP 100V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
LL4003G L0 Taiwan Semiconductor Corporation LL4001G%20SERIES_E15.pdf Description: DIODE GEN PURP 200V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
LL4005G L0 Taiwan Semiconductor Corporation LL4001G%20SERIES_E15.pdf Description: DIODE GEN PURP 600V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
LL4006G L0 Taiwan Semiconductor Corporation LL4001G%20SERIES_E15.pdf Description: DIODE GEN PURP 800V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
LL4007G L0 Taiwan Semiconductor Corporation LL4001G%20SERIES_E15.pdf Description: DIODE GEN PURP 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
SMCJ18A V6G SMCJ18A V6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
SMCJ18A R7G SMCJ18A R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
SMCJ18A V7G SMCJ18A V7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
SMCJ18AHR7G SMCJ18AHR7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
TSM048NB06LCR RLG TSM048NB06LCR RLG Taiwan Semiconductor Corporation TSM048NB06LCR_B1804.pdf Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+51.78 грн
5000+ 47.99 грн
Мінімальне замовлення: 2500
TSM048NB06LCR RLG TSM048NB06LCR RLG Taiwan Semiconductor Corporation TSM048NB06LCR_B1804.pdf Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
на замовлення 7128 шт:
термін постачання 21-31 дні (днів)
3+114.46 грн
10+ 91.85 грн
100+ 73.1 грн
500+ 58.05 грн
1000+ 49.26 грн
Мінімальне замовлення: 3
TSM085P03CS RLG TSM085P03CS RLG Taiwan Semiconductor Corporation TSM085P03CS_A1703.pdf Description: MOSFET P-CHANNEL 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+24.18 грн
Мінімальне замовлення: 2500
KBL601G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G KBL60xG_F1807_DS.pdf
KBL602G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G KBL60xG_F1807_DS.pdf
KBL604G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G KBL60xG_F1807_DS.pdf
KBL605G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)
SFS1602G MNG SFS1601G%20SERIES_N15.pdf
SFS1602G MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG SFS1601G%20SERIES_N15.pdf
SFS1602GHMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
SFT17G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 1A TS-1
товар відсутній
TSS70L RWG TSS70L_B14.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 70V 70MA 1005
товар відсутній
TSS70U RGG TSS70U_C1601.pdf
TSS70U RGG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 70V 70MA 0603
товар відсутній
P6SMB16A M4G P6SMB%20SERIES_N1701.pdf
P6SMB16A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO214AA
товар відсутній
BZD27C51PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRVG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZD27C51PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C51PHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRUG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
1SMA4747 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4747 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1SMA4751 R3G 1SMA4737%20SERIES_O15.pdf
1SMA4751 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1.25W DO214AC
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
1SMA4749 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4749 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
товар відсутній
1M150Z R0G 1N4740A SERIES_N1706.pdf
1M150Z R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 150V 1W DO204AL
товар відсутній
1M160Z R0G 1N4740A SERIES_N1706.pdf
1M160Z R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 1W DO204AL
товар відсутній
1M200Z R0G 1N4740A SERIES_N1706.pdf
1M200Z R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1W DO204AL
товар відсутній
1SMA4738 R3G 1SMA4737%20SERIES_O15.pdf
1SMA4738 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1SMA4737HR3G 1SMA4737%20SERIES_O15.pdf
1SMA4737HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 1.25W DO214AC
товар відсутній
1SMA4738HR3G 1SMA4737%20SERIES_P2102.pdf
1SMA4738HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
товар відсутній
1SMA4739HR3G 1SMA4737%20SERIES_O15.pdf
1SMA4739HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 1.25W DO214AC
товар відсутній
1SMA4740HR3G 1SMA4737%20SERIES_O15.pdf
1SMA4740HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 1.25W DO214AC
товар відсутній
1SMA4742 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4742 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1SMA4742 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4742 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1.25W DO214AC
на замовлення 3017 шт:
термін постачання 21-31 дні (днів)
1SMA4743 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4743 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.25W DO214AC
товар відсутній
1M110Z R0G 1N4740A SERIES_N1706.pdf
1M110Z R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1W DO204AL
товар відсутній
1M130Z R0G 1N4740A SERIES_N1706.pdf
1M130Z R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 1W DO204AL
товар відсутній
1.5KE9.1CA R0G 1.5KE%20SERIES_O2104.pdf
1.5KE9.1CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 117A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
1SMA4753 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4753 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+10.29 грн
Мінімальне замовлення: 1800
1SMA4753 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4753 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
на замовлення 2082 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.81 грн
12+ 25.86 грн
100+ 17.61 грн
500+ 12.4 грн
Мінімальне замовлення: 10
BZX585B39 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B39 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD523F
товар відсутній
LL4002G L0 LL4001G%20SERIES_E15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
LL4003G L0 LL4001G%20SERIES_E15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
LL4005G L0 LL4001G%20SERIES_E15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
LL4006G L0 LL4001G%20SERIES_E15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
LL4007G L0 LL4001G%20SERIES_E15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
SMCJ18A V6G SMCJ SERIES_R2004.pdf
SMCJ18A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
SMCJ18A R7G SMCJ SERIES_R2004.pdf
SMCJ18A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
SMCJ18A V7G SMCJ SERIES_R2004.pdf
SMCJ18A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
SMCJ18AHR7G SMCJ SERIES_R2004.pdf
SMCJ18AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18V 29.2V DO214AB
товар відсутній
TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+51.78 грн
5000+ 47.99 грн
Мінімальне замовлення: 2500
TSM048NB06LCR RLG TSM048NB06LCR_B1804.pdf
TSM048NB06LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/107A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
на замовлення 7128 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.46 грн
10+ 91.85 грн
100+ 73.1 грн
500+ 58.05 грн
1000+ 49.26 грн
Мінімальне замовлення: 3
TSM085P03CS RLG TSM085P03CS_A1703.pdf
TSM085P03CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+24.18 грн
Мінімальне замовлення: 2500
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