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HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)
BZT55C10 L1G BZT55C10 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
товар відсутній
BZT55C10 L0G BZT55C10 L0G Taiwan Semiconductor Corporation BZT55C2V4 SERIES_I2301.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
товар відсутній
TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
товар відсутній
TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
товар відсутній
BAS21C RFG BAS21C RFG Taiwan Semiconductor Corporation BAS21%20SERIES_D14.pdf Description: DIODE ARRAY GP 250V 200MA SOT23
товар відсутній
BZT55C2V7 L1G BZT55C2V7 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
BZT55C2V7 L0G BZT55C2V7 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
SR315 R0G SR315 R0G Taiwan Semiconductor Corporation SR302%20SERIES_I13.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HR0G SR315HR0G Taiwan Semiconductor Corporation SR302%20SERIES_I13.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HA0G SR315HA0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
SR315 B0G SR315 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR315HB0G SR315HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
SMAJ90AHR3G SMAJ90AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SMAJ90AHR3G SMAJ90AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
GBL204 D2G GBL204 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
товар відсутній
GBL206 D2G GBL206 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
товар відсутній
GBL207 D2G GBL207 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
товар відсутній
GBL201 D2G GBL201 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBL201HD2G GBL201HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBL203 D2G GBL203 D2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBL203HD2G GBL203HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
GBL204HD2G GBL204HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBL205HD2G GBL205HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
GBL206HD2G GBL206HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBL207HD2G GBL207HD2G Taiwan Semiconductor Corporation GBL201%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
KBL601G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0 KBL602G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL604G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
товар відсутній
KBL605G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0 Taiwan Semiconductor Corporation KBL601G%20SERIES_F1807.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
KBL601G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G KBL602G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G KBL604G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G KBL605G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G Taiwan Semiconductor Corporation KBL60xG_F1807_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1DAL M3G Taiwan Semiconductor Corporation Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)
SFS1602G MNG SFS1602G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG SFS1602GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
SFT17G R0G Taiwan Semiconductor Corporation SFT11G%20SERIES_I15.pdf Description: DIODE GEN PURP 500V 1A TS-1
товар відсутній
TSS70L RWG Taiwan Semiconductor Corporation TSS70L_B14.pdf Description: DIODE SCHOTTKY 70V 70MA 1005
товар відсутній
TSS70U RGG TSS70U RGG Taiwan Semiconductor Corporation TSS70U_C1601.pdf Description: DIODE SCHOTTKY 70V 70MA 0603
товар відсутній
P6SMB16A M4G P6SMB16A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 13.6V 22.5V DO214AA
товар відсутній
BZD27C51PHRQG BZD27C51PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRVG BZD27C51PHRVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRHG BZD27C51PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHM2G BZD27C51PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMHG BZD27C51PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMQG BZD27C51PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMTG BZD27C51PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRTG BZD27C51PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRFG BZD27C51PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRUG BZD27C51PHRUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
1SMA4747 R3G 1SMA4747 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 20V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
HS2MFS M3G
HS2MFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
на замовлення 9396 шт:
термін постачання 21-31 дні (днів)
BZT55C10 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C10 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
товар відсутній
BZT55C10 L0G BZT55C2V4 SERIES_I2301.pdf
BZT55C10 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
товар відсутній
TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
товар відсутній
TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
товар відсутній
BAS21C RFG BAS21%20SERIES_D14.pdf
BAS21C RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
товар відсутній
BZT55C2V7 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
BZT55C2V7 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
товар відсутній
SR315 R0G SR302%20SERIES_I13.pdf
SR315 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HR0G SR302%20SERIES_I13.pdf
SR315HR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
товар відсутній
SR315HA0G
SR315HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
SR315 B0G SR302%20SERIES_J2105.pdf
SR315 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR315HB0G SR302%20SERIES_J2105.pdf
SR315HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
SMAJ90AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ90AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SMAJ90AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ90AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
GBL204 D2G GBL201%20SERIES_J2103.pdf
GBL204 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
товар відсутній
GBL206 D2G GBL201%20SERIES_J2103.pdf
GBL206 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
товар відсутній
GBL207 D2G GBL201%20SERIES_J2103.pdf
GBL207 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
товар відсутній
GBL201 D2G GBL201%20SERIES_J2103.pdf
GBL201 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBL201HD2G GBL201%20SERIES_J2103.pdf
GBL201HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBL203 D2G GBL201%20SERIES_J2103.pdf
GBL203 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBL203HD2G GBL201%20SERIES_J2103.pdf
GBL203HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
GBL204HD2G GBL201%20SERIES_J2103.pdf
GBL204HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBL205HD2G GBL201%20SERIES_J2103.pdf
GBL205HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
GBL206HD2G GBL201%20SERIES_J2103.pdf
GBL206HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBL207HD2G GBL201%20SERIES_J2103.pdf
GBL207HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
KBL601G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0 KBL601G%20SERIES_G2103.pdf
KBL602G T0
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL604G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
товар відсутній
KBL605G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0 KBL601G%20SERIES_F1807.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
KBL601G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 6A KBL
товар відсутній
KBL602G T0G KBL60xG_F1807_DS.pdf
KBL602G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBL603G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 6A KBL
товар відсутній
KBL604G T0G KBL60xG_F1807_DS.pdf
KBL604G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBL
Packaging: Tray
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBL605G T0G KBL60xG_F1807_DS.pdf
KBL605G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBL
товар відсутній
KBL607G T0G KBL60xG_F1807_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
товар відсутній
RS1DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
RS1DAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 200V, FAST RECOVERY R
на замовлення 6998 шт:
термін постачання 21-31 дні (днів)
SFS1602G MNG SFS1601G%20SERIES_N15.pdf
SFS1602G MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFS1602GHMNG SFS1601G%20SERIES_N15.pdf
SFS1602GHMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
SFT12G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
товар відсутній
SFT13G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A TS-1
товар відсутній
SFT14G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT16G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
товар відсутній
SFT17G R0G SFT11G%20SERIES_I15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 1A TS-1
товар відсутній
TSS70L RWG TSS70L_B14.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 70V 70MA 1005
товар відсутній
TSS70U RGG TSS70U_C1601.pdf
TSS70U RGG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 70V 70MA 0603
товар відсутній
P6SMB16A M4G P6SMB%20SERIES_N1701.pdf
P6SMB16A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO214AA
товар відсутній
BZD27C51PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRVG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C51PHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
BZD27C51PHRUG BZD27C%20SERIES_AB2103.pdf
BZD27C51PHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Qualification: AEC-Q101
товар відсутній
1SMA4747 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4747 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
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