Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99810) > Сторінка 946 з 1664
Фото | Назва | Виробник | Інформація |
Доступність |
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BR35H128FJ-WCE2 | Rohm Semiconductor | Description: IC EEPROM 128K SPI 5MHZ 8SOPJ |
товар відсутній |
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DTA043XUBTL | Rohm Semiconductor | Description: PNP, SOT-323FL, R1R2 LEAK ABSORP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA043XUBTL | Rohm Semiconductor | Description: PNP, SOT-323FL, R1R2 LEAK ABSORP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA044TMT2L | Rohm Semiconductor | Description: TRANS PREBIAS PNP 50V VMT3 |
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DTA044TEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZEFRATL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZEFRATL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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RN731VFHTE-17 | Rohm Semiconductor | Description: RF DIODE PIN 50V UMD2 |
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RN731VFHTE-17 | Rohm Semiconductor | Description: RF DIODE PIN 50V UMD2 |
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BD7694FJ-E2 | Rohm Semiconductor |
Description: POWER FACTOR CORRECTION CONTROLL Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 10V ~ 38V Mode: Continuous Conduction (CCM) Supplier Device Package: 8-SOP-J Part Status: Active Current - Startup: 100 µA |
товар відсутній |
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BD7694FJ-E2 | Rohm Semiconductor |
Description: POWER FACTOR CORRECTION CONTROLL Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 10V ~ 38V Mode: Continuous Conduction (CCM) Supplier Device Package: 8-SOP-J Part Status: Active Current - Startup: 100 µA |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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SMLA12ENTT86 | Rohm Semiconductor |
Description: LED GREEN 1611 SMD R/A Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Green Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 140mcd Voltage - Forward (Vf) (Typ): 3V Current - Test: 5mA Height (Max): 0.65mm Wavelength - Dominant: 527nm Supplier Device Package: 1611(0605) Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMLA12ENTT86 | Rohm Semiconductor |
Description: LED GREEN 1611 SMD R/A Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Green Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 140mcd Voltage - Forward (Vf) (Typ): 3V Current - Test: 5mA Height (Max): 0.65mm Wavelength - Dominant: 527nm Supplier Device Package: 1611(0605) Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 8221 шт: термін постачання 21-31 дні (днів) |
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SP8M21HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A/4A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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SP8M21HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A/4A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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SP8M41HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SP8M41HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1882 шт: термін постачання 21-31 дні (днів) |
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SP8M51HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
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SP8M51HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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SP8M24HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
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SH8M4TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 9A/7A 8SOIC |
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RR274EA-400FHTR | Rohm Semiconductor |
Description: DIODE ARRAY GP 400V 500MA TSMD5 Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: TSMD5 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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SCS230AE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC SCHOT 650V TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
на замовлення 423 шт: термін постачання 21-31 дні (днів) |
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SCS220AGC17 | Rohm Semiconductor |
Description: DIODE SIC 650V 20A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 722 шт: термін постачання 21-31 дні (днів) |
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SCS212AGC17 | Rohm Semiconductor |
Description: DIODE SIC 650V 12A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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SCS220KGC17 | Rohm Semiconductor |
Description: DIODE SIC 1.2KV 20A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
на замовлення 854 шт: термін постачання 21-31 дні (днів) |
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SCS220KE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC 1200V 10A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 820 шт: термін постачання 21-31 дні (днів) |
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SCS230KE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC 1200V 15A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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SCS220AE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC SCHOT 650V TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
на замовлення 663 шт: термін постачання 21-31 дні (днів) |
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SCS220AEGC11 | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
на замовлення 358 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4223 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4223 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR051 | Rohm Semiconductor |
Description: RES 0.051 OHM 1% 4W 2512 WIDE Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 51 mOhms |
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LTR100LJZPFSR051 | Rohm Semiconductor |
Description: RES 0.051 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 51 mOhms |
на замовлення 3936 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR062 | Rohm Semiconductor |
Description: RES 0.062 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 62 MOhms |
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LTR100LJZPFSR062 | Rohm Semiconductor |
Description: RES 0.062 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 62 MOhms |
на замовлення 3785 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR039 | Rohm Semiconductor |
Description: RES 0.039 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 39 mOhms |
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LTR100LJZPFSR039 | Rohm Semiconductor |
Description: RES 0.039 OHM 1% 4W 2512 WIDE Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 39 mOhms |
на замовлення 3966 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR056 | Rohm Semiconductor |
Description: RES 0.056 OHM 1% 4W 2512 WIDE Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 56 mOhms |
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LTR100LJZPFSR056 | Rohm Semiconductor |
Description: RES 0.056 OHM 1% 4W 2512 WIDE Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 56 mOhms |
на замовлення 3960 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR082 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 82 mOhms |
товар відсутній |
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LTR100LJZPFSR082 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 82 mOhms |
на замовлення 2853 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR033 | Rohm Semiconductor |
Description: RES 0.033 OHM 1% 4W 2512 WIDE Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 33 mOhms |
товар відсутній |
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LTR100LJZPFSR033 | Rohm Semiconductor |
Description: RES 0.033 OHM 1% 4W 2512 WIDE Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 33 mOhms |
на замовлення 3984 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR027 | Rohm Semiconductor |
Description: RES 0.027 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 27 mOhms |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR027 | Rohm Semiconductor |
Description: RES 0.027 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Resistance: 27 mOhms |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR024 | Rohm Semiconductor |
Description: RES 0.024 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 24 mOhms |
товар відсутній |
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LTR100LJZPFSR024 | Rohm Semiconductor |
Description: RES 0.024 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 24 mOhms |
на замовлення 3863 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR011 | Rohm Semiconductor |
Description: RES 0.011 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 11 mOhms |
товар відсутній |
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LTR100LJZPFSR011 | Rohm Semiconductor |
Description: RES 0.011 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 11 mOhms |
на замовлення 3827 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR016 | Rohm Semiconductor |
Description: RES 0.016 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 16 mOhms |
товар відсутній |
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LTR100LJZPFSR016 | Rohm Semiconductor |
Description: RES 0.016 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 16 mOhms |
на замовлення 3742 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR013 | Rohm Semiconductor |
Description: RES 0.013 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 13 mOhms |
товар відсутній |
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LTR100LJZPFSR013 | Rohm Semiconductor |
Description: RES 0.013 OHM 1% 4W 2512 WIDE Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 13 mOhms |
на замовлення 3760 шт: термін постачання 21-31 дні (днів) |
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SML522BUNWT86 | Rohm Semiconductor |
Description: LED BLUE/RED DIFFUSED SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Color: Blue, Red Size / Dimension: 1.50mm L x 1.30mm W Mounting Type: Surface Mount Millicandela Rating: 22mcd Blue, 21mcd Red Configuration: Independent Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red Lens Color: White Current - Test: 5mA Blue, 5mA Red Height (Max): 0.70mm Wavelength - Dominant: 470nm Blue, 624nm Red Lens Transparency: Diffused Lens Style: Rectangle with Flat Top Lens Size: 1.30mm x 1.10mm |
товар відсутній |
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SML522BUNWT86 | Rohm Semiconductor |
Description: LED BLUE/RED DIFFUSED SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Color: Blue, Red Size / Dimension: 1.50mm L x 1.30mm W Mounting Type: Surface Mount Millicandela Rating: 22mcd Blue, 21mcd Red Configuration: Independent Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red Lens Color: White Current - Test: 5mA Blue, 5mA Red Height (Max): 0.70mm Wavelength - Dominant: 470nm Blue, 624nm Red Lens Transparency: Diffused Lens Style: Rectangle with Flat Top Lens Size: 1.30mm x 1.10mm |
на замовлення 698 шт: термін постачання 21-31 дні (днів) |
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RQ6E045SNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ6E045SNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SH8K39GZETB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
товар відсутній |
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SH8K39GZETB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
на замовлення 3945 шт: термін постачання 21-31 дні (днів) |
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BR35H128FJ-WCE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 128K SPI 5MHZ 8SOPJ
Description: IC EEPROM 128K SPI 5MHZ 8SOPJ
товар відсутній
DTA043XUBTL |
Виробник: Rohm Semiconductor
Description: PNP, SOT-323FL, R1R2 LEAK ABSORP
Description: PNP, SOT-323FL, R1R2 LEAK ABSORP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.28 грн |
DTA043XUBTL |
Виробник: Rohm Semiconductor
Description: PNP, SOT-323FL, R1R2 LEAK ABSORP
Description: PNP, SOT-323FL, R1R2 LEAK ABSORP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.33 грн |
16+ | 19.26 грн |
100+ | 10.23 грн |
500+ | 6.31 грн |
1000+ | 4.29 грн |
DTA044TEBTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.27 грн |
DTA143ZEFRATL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.87 грн |
DTA143ZEFRATL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
28+ | 10.47 грн |
100+ | 5.09 грн |
500+ | 3.98 грн |
1000+ | 2.77 грн |
BD7694FJ-E2 |
Виробник: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
товар відсутній
BD7694FJ-E2 |
Виробник: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
Description: POWER FACTOR CORRECTION CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10V ~ 38V
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-SOP-J
Part Status: Active
Current - Startup: 100 µA
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.67 грн |
10+ | 58.21 грн |
25+ | 55.23 грн |
100+ | 42.59 грн |
250+ | 39.81 грн |
500+ | 35.18 грн |
1000+ | 27.32 грн |
SMLA12ENTT86 |
Виробник: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 26.59 грн |
SMLA12ENTT86 |
Виробник: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED GREEN 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 8221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.07 грн |
10+ | 48.1 грн |
100+ | 35.61 грн |
500+ | 30.71 грн |
1000+ | 25.29 грн |
SP8M21HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товар відсутній
SP8M21HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 45V 6A/4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 192.36 грн |
10+ | 153.68 грн |
100+ | 122.31 грн |
500+ | 97.13 грн |
1000+ | 82.41 грн |
SP8M41HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SP8M41HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.72 грн |
10+ | 86.61 грн |
100+ | 68.92 грн |
500+ | 54.73 грн |
1000+ | 46.44 грн |
SP8M51HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
SP8M51HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 100V 3A/2.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 989 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111 грн |
10+ | 89.18 грн |
100+ | 70.97 грн |
500+ | 56.36 грн |
SP8M24HZGTB |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
RR274EA-400FHTR |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
SCS230AE2GC11 |
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE ARR SIC SCHOT 650V TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 844.7 грн |
10+ | 697.15 грн |
SCS220AGC17 |
Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIC 650V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 525.37 грн |
50+ | 403.72 грн |
100+ | 361.22 грн |
500+ | 299.11 грн |
SCS212AGC17 |
Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 406.76 грн |
10+ | 328.73 грн |
100+ | 265.92 грн |
SCS220KGC17 |
Виробник: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIC 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 900.2 грн |
10+ | 763.7 грн |
100+ | 660.5 грн |
500+ | 561.74 грн |
SCS220KE2GC11 |
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 990.67 грн |
30+ | 772.48 грн |
120+ | 727.04 грн |
510+ | 618.33 грн |
SCS230KE2GC11 |
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 15A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: DIODE ARR SIC 1200V 15A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
на замовлення 330 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1377.67 грн |
10+ | 1168.35 грн |
SCS220AE2GC11 |
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE ARR SIC SCHOT 650V TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 642.46 грн |
10+ | 530.8 грн |
450+ | 390.28 грн |
SCS220AEGC11 |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: DIODE SIL CARBIDE 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 621.93 грн |
10+ | 513.6 грн |
SDR03EZPD4223 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.89 грн |
10000+ | 1.7 грн |
SDR03EZPD4223 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
22+ | 13.4 грн |
100+ | 5.23 грн |
1000+ | 2.05 грн |
2500+ | 1.88 грн |
LTR100LJZPFSR051 |
Виробник: Rohm Semiconductor
Description: RES 0.051 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 51 mOhms
Description: RES 0.051 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 51 mOhms
товар відсутній
LTR100LJZPFSR051 |
Виробник: Rohm Semiconductor
Description: RES 0.051 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 51 mOhms
Description: RES 0.051 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 51 mOhms
на замовлення 3936 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR062 |
Виробник: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
товар відсутній
LTR100LJZPFSR062 |
Виробник: Rohm Semiconductor
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
Description: RES 0.062 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 62 MOhms
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR039 |
Виробник: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
товар відсутній
LTR100LJZPFSR039 |
Виробник: Rohm Semiconductor
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
Description: RES 0.039 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 39 mOhms
на замовлення 3966 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR056 |
Виробник: Rohm Semiconductor
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
товар відсутній
LTR100LJZPFSR056 |
Виробник: Rohm Semiconductor
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
Description: RES 0.056 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 56 mOhms
на замовлення 3960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR082 |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
Description: HIGH POWER CHIP RESISTOR
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
товар відсутній
LTR100LJZPFSR082 |
Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
Description: HIGH POWER CHIP RESISTOR
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 82 mOhms
на замовлення 2853 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.2 грн |
10+ | 91.15 грн |
100+ | 66.18 грн |
1000+ | 36.71 грн |
LTR100LJZPFSR033 |
Виробник: Rohm Semiconductor
Description: RES 0.033 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 33 mOhms
Description: RES 0.033 OHM 1% 4W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 33 mOhms
товар відсутній
LTR100LJZPFSR033 |
Виробник: Rohm Semiconductor
Description: RES 0.033 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 33 mOhms
Description: RES 0.033 OHM 1% 4W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 33 mOhms
на замовлення 3984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR027 |
Виробник: Rohm Semiconductor
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 38.43 грн |
LTR100LJZPFSR027 |
Виробник: Rohm Semiconductor
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
Description: RES 0.027 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 27 mOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR024 |
Виробник: Rohm Semiconductor
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
товар відсутній
LTR100LJZPFSR024 |
Виробник: Rohm Semiconductor
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
Description: RES 0.024 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 24 mOhms
на замовлення 3863 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR011 |
Виробник: Rohm Semiconductor
Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
товар відсутній
LTR100LJZPFSR011 |
Виробник: Rohm Semiconductor
Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
Description: RES 0.011 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 11 mOhms
на замовлення 3827 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR016 |
Виробник: Rohm Semiconductor
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
товар відсутній
LTR100LJZPFSR016 |
Виробник: Rohm Semiconductor
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
Description: RES 0.016 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 16 mOhms
на замовлення 3742 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
LTR100LJZPFSR013 |
Виробник: Rohm Semiconductor
Description: RES 0.013 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 13 mOhms
Description: RES 0.013 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 13 mOhms
товар відсутній
LTR100LJZPFSR013 |
Виробник: Rohm Semiconductor
Description: RES 0.013 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 13 mOhms
Description: RES 0.013 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 13 mOhms
на замовлення 3760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.34 грн |
10+ | 88.22 грн |
50+ | 64.96 грн |
100+ | 54.16 грн |
500+ | 42.26 грн |
1000+ | 38.62 грн |
SML522BUNWT86 |
Виробник: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
товар відсутній
SML522BUNWT86 |
Виробник: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Color: Blue, Red
Size / Dimension: 1.50mm L x 1.30mm W
Mounting Type: Surface Mount
Millicandela Rating: 22mcd Blue, 21mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Lens Color: White
Current - Test: 5mA Blue, 5mA Red
Height (Max): 0.70mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.30mm x 1.10mm
на замовлення 698 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.52 грн |
10+ | 56.96 грн |
100+ | 42.19 грн |
500+ | 36.39 грн |
RQ6E045SNTR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.51 грн |
RQ6E045SNTR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.38 грн |
10+ | 38.44 грн |
100+ | 26.62 грн |
500+ | 20.87 грн |
1000+ | 17.77 грн |
SH8K39GZETB |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
товар відсутній
SH8K39GZETB |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 149.78 грн |
10+ | 119.78 грн |
100+ | 95.32 грн |
500+ | 75.7 грн |
1000+ | 64.23 грн |