SH8K39GZETB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 153.29 грн |
10+ | 122.59 грн |
100+ | 97.56 грн |
500+ | 77.47 грн |
1000+ | 65.73 грн |
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Технічний опис SH8K39GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 200µA, Supplier Device Package: 8-SOP.
Інші пропозиції SH8K39GZETB за ціною від 61.86 грн до 161.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SH8K39GZETB | Виробник : ROHM Semiconductor | MOSFET 4V Drive Nch+Nch MOSFET. SH8K39 is a power MOSFET with low-on resistance and High power package (SOP8), suitable for switching and motor drive. |
на замовлення 2820 шт: термін постачання 21-30 дні (днів) |
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SH8K39GZETB | Виробник : Rohm Semiconductor | Trans MOSFET N-CH 60V 13A 8-Pin SOP T/R |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SH8K39GZETB | Виробник : Rohm Semiconductor | Trans MOSFET N-CH 60V 13A 8-Pin SOP T/R |
на замовлення 637 шт: термін постачання 21-31 дні (днів) |
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SH8K39GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 13A; Idm: 30A; 5.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 30A Power dissipation: 5.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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SH8K39GZETB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
товар відсутній |
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SH8K39GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 13A; Idm: 30A; 5.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 30A Power dissipation: 5.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |