Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100330) > Сторінка 951 з 1673
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BD10IA5MEFJ-LBH2 | Rohm Semiconductor | Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BD10IA5MEFJ-LBH2 | Rohm Semiconductor | Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BRCB016GWL-3UE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 5UCSP50L1 Packaging: Tape & Reel (TR) Package / Case: 5-UFBGA, CSPBGA Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 5-UCSP50L1 (1.1x1.15) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BRCB016GWL-3UE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 5UCSP50L1 Packaging: Cut Tape (CT) Package / Case: 5-UFBGA, CSPBGA Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 5-UCSP50L1 (1.1x1.15) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HP8MA2TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
товар відсутній |
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HP8MA2TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
на замовлення 1712 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD43R2 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD43R2 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4303 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP Packaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 430 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4303 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP Packaging: Cut Tape (CT) Power (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 430 kOhms |
на замовлення 9897 шт: термін постачання 21-31 дні (днів) |
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BD9528AMUV-E2 | Rohm Semiconductor |
Description: IC REG QD BUCK/LNR VQFN032V5050 Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 100°C Voltage - Supply: 5.5V ~ 28V Frequency - Switching: 200kHz ~ 500kHz Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Supplier Device Package: VQFN032V5050 Voltage/Current - Output 1: Adj to 5.5V Voltage/Current - Output 2: Adj to 5.5V Voltage/Current - Output 3: 3.3V, 100mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 4 |
товар відсутній |
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BD9528AMUV-E2 | Rohm Semiconductor |
Description: IC REG QD BUCK/LNR VQFN032V5050 Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 100°C Voltage - Supply: 5.5V ~ 28V Frequency - Switching: 200kHz ~ 500kHz Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Supplier Device Package: VQFN032V5050 Voltage/Current - Output 1: Adj to 5.5V Voltage/Current - Output 2: Adj to 5.5V Voltage/Current - Output 3: 3.3V, 100mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 4 |
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SFR18EZPJ111 | Rohm Semiconductor | Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ111 | Rohm Semiconductor | Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ111 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ111 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ114 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 110 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ114 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS Packaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 110 kOhms |
на замовлення 9794 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ111 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ111 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 9973 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ111 | Rohm Semiconductor | Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ111 | Rohm Semiconductor | Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ114 | Rohm Semiconductor | Description: SULFUR TOLERANT CHIP RESISTORS |
товар відсутній |
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SFR01MZPJ114 | Rohm Semiconductor | Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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BU4246F-TR | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 4SOP |
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BU4246F-TR | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 4SOP |
на замовлення 1965 шт: термін постачання 21-31 дні (днів) |
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R6507KNXC7G | Rohm Semiconductor | Description: 650V 7A TO-220FM, HIGH-SPEED SWI |
товар відсутній |
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R6507KNXC7G | Rohm Semiconductor | Description: 650V 7A TO-220FM, HIGH-SPEED SWI |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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R6509KNXC7G | Rohm Semiconductor | Description: 650V 9A TO-220FM, HIGH-SPEED SWI |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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R6511KNXC7G | Rohm Semiconductor |
Description: 650V 11A TO-220FM, HIGH-SPEED SW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 320µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
на замовлення 3984 шт: термін постачання 21-31 дні (днів) |
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R6524KNXC7G | Rohm Semiconductor |
Description: 650V 24A TO-220FM, HIGH-SPEED SW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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RF202LAM2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 2A PMDTM Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |
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RF202LAM2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 2A PMDTM Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 869 шт: термін постачання 21-31 дні (днів) |
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RF302LAM2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A PMDTM Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |
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RF302LAM2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A PMDTM Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 3693 шт: термін постачання 21-31 дні (днів) |
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BU33JA3DG-CTR | Rohm Semiconductor |
Description: 300MA 3.3V, CMOS LDO REGULATORSF Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.2V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit |
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BU33JA3DG-CTR | Rohm Semiconductor |
Description: 300MA 3.3V, CMOS LDO REGULATORSF Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.2V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 2459 шт: термін постачання 21-31 дні (днів) |
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BD16852EFV-CE2 | Rohm Semiconductor |
Description: THREE-PHASE BRUSHLESS MOTOR DRIV Packaging: Tape & Reel (TR) Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Operating Temperature: -40°C ~ 125°C Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 18V Technology: DMOS Voltage - Load: 5.5V ~ 18V Supplier Device Package: 28-HTSSOP-B Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
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BD16852EFV-CE2 | Rohm Semiconductor |
Description: THREE-PHASE BRUSHLESS MOTOR DRIV Packaging: Cut Tape (CT) Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Operating Temperature: -40°C ~ 125°C Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 18V Technology: DMOS Voltage - Load: 5.5V ~ 18V Supplier Device Package: 28-HTSSOP-B Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF24R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 24 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF24R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 24 Ohms |
на замовлення 9445 шт: термін постачання 21-31 дні (днів) |
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ML610Q174-448GAZWAAL | Rohm Semiconductor | Description: IC |
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BSS670T116 | Rohm Semiconductor |
Description: NCH 60V 650MA, SOT-23, SMALL SIG Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V |
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BSS670T116 | Rohm Semiconductor |
Description: NCH 60V 650MA, SOT-23, SMALL SIG Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V |
на замовлення 403 шт: термін постачання 21-31 дні (днів) |
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CSL1901VW1 | Rohm Semiconductor |
Description: LED RED DIFFUSED 0603 SMD Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 4.8mcd Voltage - Forward (Vf) (Typ): 1.8V Lens Color: White Current - Test: 2mA Height (Max): 0.65mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Diffused Lens Style: Rectangle with Flat Top Lens Size: 1.10mm x 0.80mm |
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CSL1901VW1 | Rohm Semiconductor |
Description: LED RED DIFFUSED 0603 SMD Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 4.8mcd Voltage - Forward (Vf) (Typ): 1.8V Lens Color: White Current - Test: 2mA Height (Max): 0.65mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Diffused Lens Style: Rectangle with Flat Top Lens Size: 1.10mm x 0.80mm |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
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EDZCVFHT2R6.8B | Rohm Semiconductor | Description: TVS DIODE 5VWM EMD2 |
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EDZCVFHT2R6.8B | Rohm Semiconductor | Description: TVS DIODE 5VWM EMD2 |
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RQ3E180BNTB1 | Rohm Semiconductor |
Description: NCH 30V 39A MIDDLE POWER MOSFET: Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товар відсутній |
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RQ3E180BNTB1 | Rohm Semiconductor |
Description: NCH 30V 39A MIDDLE POWER MOSFET: Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
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DTA124XETL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 757 шт: термін постачання 21-31 дні (днів) |
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DTA124XEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |
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DTA124XEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 1530 шт: термін постачання 21-31 дні (днів) |
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DTA124TCAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA124TCAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA124XU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DTA124XU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 14994 шт: термін постачання 21-31 дні (днів) |
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DTA124EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товар відсутній |
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DTA124EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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DTA124XE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD10IA5MEFJ-LBH2 |
Виробник: Rohm Semiconductor
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 102.07 грн |
BD10IA5MEFJ-LBH2 |
Виробник: Rohm Semiconductor
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 150.96 грн |
10+ | 130.15 грн |
25+ | 122.86 грн |
100+ | 98.24 грн |
BRCB016GWL-3UE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 20.49 грн |
BRCB016GWL-3UE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.91 грн |
10+ | 36.19 грн |
25+ | 33.63 грн |
50+ | 31.39 грн |
100+ | 27.87 грн |
250+ | 27.52 грн |
500+ | 26.66 грн |
1000+ | 25.95 грн |
HP8MA2TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
товар відсутній
HP8MA2TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
на замовлення 1712 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.5 грн |
10+ | 99.58 грн |
100+ | 79.27 грн |
500+ | 62.94 грн |
1000+ | 53.41 грн |
SDR03EZPD43R2 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.32 грн |
10000+ | 2.09 грн |
SDR03EZPD43R2 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 20.23 грн |
19+ | 16.41 грн |
100+ | 6.41 грн |
1000+ | 2.52 грн |
2500+ | 2.31 грн |
SDR03EZPD4303 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.12 грн |
SDR03EZPD4303 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
на замовлення 9897 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.9 грн |
20+ | 14.99 грн |
100+ | 5.86 грн |
1000+ | 2.3 грн |
2500+ | 2.11 грн |
BD9528AMUV-E2 |
Виробник: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
товар відсутній
BD9528AMUV-E2 |
Виробник: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
товар відсутній
SFR18EZPJ111 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.68 грн |
10000+ | 1.51 грн |
SFR18EZPJ111 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.78 грн |
26+ | 11.84 грн |
100+ | 4.63 грн |
1000+ | 1.82 грн |
2500+ | 1.67 грн |
SDR03EZPJ111 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.02 грн |
10000+ | 0.88 грн |
SDR03EZPJ111 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.56 грн |
40+ | 7.49 грн |
104+ | 2.9 грн |
1000+ | 1.2 грн |
2500+ | 1.03 грн |
SFR03EZPJ114 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.1 грн |
SFR03EZPJ114 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
на замовлення 9794 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 9.34 грн |
73+ | 4.12 грн |
112+ | 2.7 грн |
131+ | 2.15 грн |
500+ | 1.51 грн |
1000+ | 1.32 грн |
SDR10EZPJ111 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.19 грн |
SDR10EZPJ111 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9973 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 18.68 грн |
20+ | 15.44 грн |
100+ | 6.05 грн |
1000+ | 2.38 грн |
2500+ | 2.18 грн |
SFR01MZPJ111 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 0.92 грн |
SFR01MZPJ111 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.56 грн |
40+ | 7.49 грн |
104+ | 2.9 грн |
1000+ | 1.2 грн |
2500+ | 1.03 грн |
5000+ | 0.92 грн |
SFR01MZPJ114 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
товар відсутній
SFR01MZPJ114 |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.56 грн |
40+ | 7.49 грн |
104+ | 2.9 грн |
1000+ | 1.2 грн |
2500+ | 1.03 грн |
5000+ | 0.92 грн |
BU4246F-TR |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Description: IC SUPERVISOR 1 CHANNEL 4SOP
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.8 грн |
10+ | 48.11 грн |
25+ | 45.17 грн |
100+ | 34.59 грн |
250+ | 32.13 грн |
500+ | 27.34 грн |
1000+ | 21.52 грн |
R6507KNXC7G |
Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
товар відсутній
R6507KNXC7G |
Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 199.2 грн |
10+ | 172.57 грн |
100+ | 138.69 грн |
500+ | 106.94 грн |
R6509KNXC7G |
Виробник: Rohm Semiconductor
Description: 650V 9A TO-220FM, HIGH-SPEED SWI
Description: 650V 9A TO-220FM, HIGH-SPEED SWI
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.55 грн |
10+ | 204.71 грн |
100+ | 167.67 грн |
500+ | 133.96 грн |
1000+ | 112.97 грн |
2000+ | 110.04 грн |
R6511KNXC7G |
Виробник: Rohm Semiconductor
Description: 650V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: 650V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 3984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 230.32 грн |
50+ | 175.89 грн |
100+ | 150.76 грн |
500+ | 125.76 грн |
1000+ | 107.68 грн |
2000+ | 101.4 грн |
R6524KNXC7G |
Виробник: Rohm Semiconductor
Description: 650V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: 650V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 385.95 грн |
50+ | 294.54 грн |
100+ | 252.46 грн |
500+ | 210.6 грн |
RF202LAM2STR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
RF202LAM2STR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 869 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.91 грн |
10+ | 31.92 грн |
100+ | 22.17 грн |
500+ | 16.24 грн |
RF302LAM2STR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
RF302LAM2STR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3693 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 49.02 грн |
10+ | 40.91 грн |
100+ | 28.32 грн |
500+ | 22.21 грн |
1000+ | 18.9 грн |
BU33JA3DG-CTR |
Виробник: Rohm Semiconductor
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
BU33JA3DG-CTR |
Виробник: Rohm Semiconductor
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 2459 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.03 грн |
10+ | 59.49 грн |
25+ | 55.9 грн |
100+ | 42.81 грн |
250+ | 39.76 грн |
500+ | 33.84 грн |
1000+ | 26.63 грн |
BD16852EFV-CE2 |
Виробник: Rohm Semiconductor
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
BD16852EFV-CE2 |
Виробник: Rohm Semiconductor
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 410.07 грн |
10+ | 354.87 грн |
25+ | 335.48 грн |
100+ | 272.85 грн |
250+ | 258.85 грн |
500+ | 232.27 грн |
1000+ | 192.68 грн |
SDR10EZPF24R0 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.81 грн |
SDR10EZPF24R0 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
на замовлення 9445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.9 грн |
34+ | 8.99 грн |
50+ | 6.19 грн |
100+ | 4.99 грн |
500+ | 3.67 грн |
1000+ | 3.25 грн |
BSS670T116 |
Виробник: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
товар відсутній
BSS670T116 |
Виробник: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
на замовлення 403 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.02 грн |
13+ | 24.05 грн |
100+ | 12.12 грн |
CSL1901VW1 |
Виробник: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
товар відсутній
CSL1901VW1 |
Виробник: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.57 грн |
15+ | 20.61 грн |
100+ | 13.17 грн |
500+ | 9.63 грн |
1000+ | 8.8 грн |
2000+ | 8.12 грн |
RQ3E180BNTB1 |
Виробник: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
товар відсутній
RQ3E180BNTB1 |
Виробник: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 141.62 грн |
10+ | 86.1 грн |
100+ | 63.73 грн |
500+ | 54.96 грн |
1000+ | 45.26 грн |
DTA124XETL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 150MW EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 757 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.57 грн |
15+ | 20.98 грн |
100+ | 11.88 грн |
500+ | 7.39 грн |
DTA124XEBTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
DTA124XEBTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 1530 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.46 грн |
17+ | 17.83 грн |
100+ | 9.01 грн |
500+ | 6.89 грн |
1000+ | 5.11 грн |
DTA124TCAT116 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.63 грн |
DTA124TCAT116 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.68 грн |
18+ | 17.38 грн |
100+ | 8.77 грн |
500+ | 6.71 грн |
1000+ | 4.98 грн |
DTA124XU3T106 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.41 грн |
6000+ | 2.15 грн |
9000+ | 1.78 грн |
DTA124XU3T106 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 14994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 14.01 грн |
32+ | 9.44 грн |
100+ | 4.62 грн |
500+ | 3.61 грн |
1000+ | 2.51 грн |
DTA124EU3T106 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
DTA124EU3T106 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 14.01 грн |
32+ | 9.37 грн |
100+ | 4.56 грн |
500+ | 3.57 грн |
1000+ | 2.48 грн |
DTA124XE3HZGTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.2 грн |