Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99643) > Сторінка 779 з 1661
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RB085BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
||||||||||||||
RB085BM-60TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
на замовлення 1909 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB085BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 1580 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB095BM-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
||||||||||||||
RB095BM-90TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
товару немає в наявності |
||||||||||||||
RB160MM-90TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 90V 1A PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
на замовлення 41397 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB162MM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 20806 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB168L150TE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 150V 1A PMDS |
на замовлення 1103 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RB168L-40TE25 | Rohm Semiconductor | Description: DIODE SCHOTTKY 40V 1A PMDS |
на замовлення 3713 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RB168M150TR | Rohm Semiconductor | Description: DIODE SCHOTTKY 150V 1A PMDU |
товару немає в наявності |
||||||||||||||
RB168MM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A Current - Reverse Leakage @ Vr: 550 nA @ 40 V |
на замовлення 110045 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB228NS100TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 15A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 1555 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB425DFHT146 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 50MA SMD3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50mA Supplier Device Package: SMD3 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Qualification: AEC-Q101 |
на замовлення 1738 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB520CM-60T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 100MA VMN2M Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 60 V |
на замовлення 1616 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB520CS-30T2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA VMN2 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
товару немає в наявності |
||||||||||||||
RB521AS-30T2R | Rohm Semiconductor | Description: DIODE SCHOTTKY 30V 200MA VML2 |
на замовлення 780 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RB521AS-40T2R | Rohm Semiconductor | Description: DIODE SCHOTTKY 40V 200MA VML2 |
на замовлення 7985 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RB521CS-30T2RA | Rohm Semiconductor | Description: DIODE SCHOTTKY 30V 100MA VMN2 |
на замовлення 3680 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB530CM-60T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 100MA VMN2M Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M (SOD-923) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA Current - Reverse Leakage @ Vr: 1 µA @ 60 V |
на замовлення 35398 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB530VM-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
на замовлення 35019 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB531VM-40TE-17 | Rohm Semiconductor | Description: DIODE SCHOTTKY 40V 100MA UMD2 |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RB550VAM-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2M Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 5297 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB578VAM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 700MA TUMD2M Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 700mA Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA Current - Reverse Leakage @ Vr: 200 nA @ 100 V |
на замовлення 30090 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RB886CST2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 15V 10MA VMN2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Diode Type: Schottky - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz Voltage - Peak Reverse (Max): 5V Supplier Device Package: VMN2 (SOD-923) Part Status: Not For New Designs Current - Max: 10 mA |
на замовлення 12367 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RBE05SM20AT2R | Rohm Semiconductor | Description: DIODE SCHOTTKY 20V 500MA EMD2 |
на замовлення 7369 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RBE07V20ATE-17 | Rohm Semiconductor | Description: DIODE SCHOTTKY 20V 700MA UMD2 |
на замовлення 5570 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RF01VM2STE-17 | Rohm Semiconductor |
Description: DIODE GEN PURP 250V 100MA UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 250 V |
на замовлення 42825 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RF101L2SDDTE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1498 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RF4E075ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 7.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
на замовлення 7776 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RFN3BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RFN6BM2DTL | Rohm Semiconductor | Description: DIODE ARRAY GP 200V 3A TO252 |
на замовлення 2467 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RFNL5BM6STL | Rohm Semiconductor | Description: DIODE GEN PURP 600V 5A TO252 |
на замовлення 1764 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RFU02VSM6STR | Rohm Semiconductor |
Description: DIODE GP 600V 200MA TUMD2SM Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 14347 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RFUH10NS4STL | Rohm Semiconductor | Description: DIODE GEN PURP 430V 10A LPDS |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RN242CST2RA | Rohm Semiconductor | Description: DIODE PIN HF SW 30V 100MA VMN2 |
на замовлення 7950 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RQ3E180AJTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A/30A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
на замовлення 16116 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RQ5E040AJTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V |
на замовлення 5325 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RQ6E055BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 5.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RR2L4SDDTE25 | Rohm Semiconductor | Description: DIODE GEN PURP 400V 2A PMDS |
на замовлення 2155 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RR2L6SDDTE25 | Rohm Semiconductor | Description: DIODE GEN PURP 600V 2A PMDS |
на замовлення 2954 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RRE02VS4SGTR | Rohm Semiconductor | Description: DIODE GEN PURP 400V 200MA TUMD2S |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RRE02VSM4STR | Rohm Semiconductor |
Description: DIODE GP 400V 200MA TUMD2SM Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: TUMD2SM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 19331 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RRE07VSM4STR | Rohm Semiconductor | Description: DIODE GP 400V 700MA TUMD2SM |
на замовлення 2470 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RS1E350BNTB | Rohm Semiconductor | Description: MOSFET N-CH 30V 35A 8HSOP |
на замовлення 1593 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RS3E075ATTB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP-J Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V |
на замовлення 11173 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RSA30LDDTE25 | Rohm Semiconductor |
Description: TVS DIODE 25.6VWM 41.4VC PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Current - Peak Pulse (10/1000µs): 14.4A (8/20µs) Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: PMDS Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
||||||||||||||
RSB6.8SMT2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM EMD2 |
товару немає в наявності |
||||||||||||||
RSH070N05GZETB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RSH070P05GZETB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
на замовлення 7443 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
RSX201VAM30TR | Rohm Semiconductor | Description: DIODE SCHOTTKY 30V 1A TUMD2M |
на замовлення 45095 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
RUS100N02TB | Rohm Semiconductor |
Description: MOSFET N-CH 20V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
BA12004BF-E2 | Rohm Semiconductor | Description: TRANS 7NPN DARL 60V 0.5A 16SOP |
на замовлення 2344 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
BA2904WF-E2 | Rohm Semiconductor | Description: IC OP AMP GROUND SENSE SOP8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
BA3472RFVM-TR | Rohm Semiconductor | Description: IC OP AMP HS HV 8MSOP |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
BD48K38G-TL | Rohm Semiconductor | Description: IC VOLTAGE SUPERVISOR 3SSOP |
товару немає в наявності |
||||||||||||||
BD49K26G-TL | Rohm Semiconductor | Description: IC VOLTAGE DETECTOR SSOP3 |
товару немає в наявності |
||||||||||||||
BD49K44G-TL | Rohm Semiconductor | Description: IC VOLTAGE DETECTOR SSOP3 |
товару немає в наявності |
||||||||||||||
BD63821EFV-E2 | Rohm Semiconductor | Description: IC MOTOR DVR W/BRUSHES 28HTSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
BD6382EFV-E2 | Rohm Semiconductor | Description: IC MOTOR DVR STEPPER 24HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
BD65499MUV-E2 | Rohm Semiconductor | Description: IC LENS DVR 1-2CH 28VQFN |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
RB085BM-30TL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
RB085BM-60TL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.49 грн |
10+ | 114.07 грн |
100+ | 78.27 грн |
500+ | 59.06 грн |
1000+ | 54.42 грн |
RB085BM-90TL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.49 грн |
10+ | 113.92 грн |
100+ | 78.17 грн |
500+ | 58.98 грн |
1000+ | 54.35 грн |
RB095BM-30TL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 425 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
RB095BM-90TL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARRAY SCHOTT 90V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
товару немає в наявності
RB160MM-90TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 90V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
на замовлення 41397 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.57 грн |
19+ | 16.04 грн |
100+ | 10.8 грн |
500+ | 7.85 грн |
1000+ | 7.09 грн |
RB162MM-30TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 20806 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.85 грн |
11+ | 28.61 грн |
100+ | 19.49 грн |
500+ | 13.72 грн |
1000+ | 10.29 грн |
RB168L150TE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDS
Description: DIODE SCHOTTKY 150V 1A PMDS
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)RB168L-40TE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDS
Description: DIODE SCHOTTKY 40V 1A PMDS
на замовлення 3713 шт:
термін постачання 21-31 дні (днів)RB168M150TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Description: DIODE SCHOTTKY 150V 1A PMDU
товару немає в наявності
RB168MM-40TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Description: DIODE SCHOTTKY 40V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
на замовлення 110045 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.01 грн |
11+ | 27.28 грн |
100+ | 19.01 грн |
500+ | 13.92 грн |
1000+ | 11.32 грн |
RB228NS100TL |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1555 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 141.26 грн |
10+ | 112.52 грн |
100+ | 89.56 грн |
500+ | 71.12 грн |
RB425DFHT146 |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 50MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 50MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.24 грн |
12+ | 26.32 грн |
100+ | 18.28 грн |
500+ | 13.39 грн |
1000+ | 10.88 грн |
RB520CM-60T2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MA VMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
Description: DIODE SCHOTTKY 60V 100MA VMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 1616 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 11.52 грн |
39+ | 7.69 грн |
100+ | 5.15 грн |
500+ | 3.69 грн |
1000+ | 3.3 грн |
RB520CS-30T2RA |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
товару немає в наявності
RB521AS-30T2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA VML2
Description: DIODE SCHOTTKY 30V 200MA VML2
на замовлення 780 шт:
термін постачання 21-31 дні (днів)RB521AS-40T2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA VML2
Description: DIODE SCHOTTKY 40V 200MA VML2
на замовлення 7985 шт:
термін постачання 21-31 дні (днів)RB521CS-30T2RA |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Description: DIODE SCHOTTKY 30V 100MA VMN2
на замовлення 3680 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.24 грн |
13+ | 23.36 грн |
100+ | 14.55 грн |
500+ | 9.34 грн |
1000+ | 7.19 грн |
2000+ | 6.47 грн |
RB530CM-60T2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MA VMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
Description: DIODE SCHOTTKY 60V 100MA VMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
на замовлення 35398 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.26 грн |
21+ | 14.27 грн |
100+ | 6.98 грн |
500+ | 5.46 грн |
1000+ | 3.8 грн |
2000+ | 3.29 грн |
RB530VM-30TE-17 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
на замовлення 35019 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 18.43 грн |
28+ | 10.87 грн |
100+ | 6.76 грн |
500+ | 4.67 грн |
1000+ | 4.12 грн |
RB531VM-40TE-17 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Description: DIODE SCHOTTKY 40V 100MA UMD2
на замовлення 98 шт:
термін постачання 21-31 дні (днів)RB550VAM-30TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 5297 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.94 грн |
15+ | 20.48 грн |
100+ | 10.34 грн |
500+ | 8.6 грн |
1000+ | 6.69 грн |
RB578VAM100TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
на замовлення 30090 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.94 грн |
15+ | 20.18 грн |
100+ | 10.2 грн |
500+ | 8.48 грн |
1000+ | 6.6 грн |
RB886CST2RA |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 15V 10MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: VMN2 (SOD-923)
Part Status: Not For New Designs
Current - Max: 10 mA
Description: DIODE SCHOTTKY 15V 10MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: VMN2 (SOD-923)
Part Status: Not For New Designs
Current - Max: 10 mA
на замовлення 12367 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.41 грн |
14+ | 21.37 грн |
100+ | 12.78 грн |
500+ | 11.11 грн |
1000+ | 7.55 грн |
2000+ | 6.95 грн |
RBE05SM20AT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA EMD2
Description: DIODE SCHOTTKY 20V 500MA EMD2
на замовлення 7369 шт:
термін постачання 21-31 дні (днів)RBE07V20ATE-17 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD2
Description: DIODE SCHOTTKY 20V 700MA UMD2
на замовлення 5570 шт:
термін постачання 21-31 дні (днів)RF01VM2STE-17 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
на замовлення 42825 шт:
термін постачання 21-31 дні (днів)RF101L2SDDTE25 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.24 грн |
12+ | 26.32 грн |
100+ | 18.28 грн |
500+ | 13.39 грн |
RF4E075ATTCR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 7776 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.76 грн |
10+ | 36.89 грн |
100+ | 25.51 грн |
500+ | 20 грн |
1000+ | 17.02 грн |
RFN3BM2SFHTL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.66 грн |
10+ | 73.71 грн |
100+ | 57.32 грн |
500+ | 45.6 грн |
1000+ | 37.15 грн |
RFN6BM2DTL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252
Description: DIODE ARRAY GP 200V 3A TO252
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)RFNL5BM6STL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Description: DIODE GEN PURP 600V 5A TO252
на замовлення 1764 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.7 грн |
10+ | 62.47 грн |
100+ | 47.91 грн |
500+ | 35.54 грн |
1000+ | 28.44 грн |
RFU02VSM6STR |
Виробник: Rohm Semiconductor
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 14347 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.73 грн |
23+ | 13.16 грн |
100+ | 8.86 грн |
500+ | 6.41 грн |
1000+ | 5.77 грн |
RFUH10NS4STL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 430V 10A LPDS
Description: DIODE GEN PURP 430V 10A LPDS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)RN242CST2RA |
Виробник: Rohm Semiconductor
Description: DIODE PIN HF SW 30V 100MA VMN2
Description: DIODE PIN HF SW 30V 100MA VMN2
на замовлення 7950 шт:
термін постачання 21-31 дні (днів)RQ3E180AJTB |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
на замовлення 16116 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.43 грн |
10+ | 61.58 грн |
100+ | 43.08 грн |
500+ | 32.64 грн |
1000+ | 30.09 грн |
RQ5E040AJTCL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
на замовлення 5325 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.22 грн |
11+ | 27.06 грн |
100+ | 18.42 грн |
500+ | 13.58 грн |
1000+ | 12.35 грн |
RQ6E055BNTCR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.71 грн |
12+ | 25.28 грн |
100+ | 17.51 грн |
500+ | 13.72 грн |
1000+ | 12.85 грн |
RR2L4SDDTE25 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 2A PMDS
Description: DIODE GEN PURP 400V 2A PMDS
на замовлення 2155 шт:
термін постачання 21-31 дні (днів)RR2L6SDDTE25 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 2A PMDS
Description: DIODE GEN PURP 600V 2A PMDS
на замовлення 2954 шт:
термін постачання 21-31 дні (днів)RRE02VS4SGTR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 200MA TUMD2S
Description: DIODE GEN PURP 400V 200MA TUMD2S
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)RRE02VSM4STR |
Виробник: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 19331 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.24 грн |
14+ | 21.59 грн |
100+ | 10.89 грн |
500+ | 8.34 грн |
1000+ | 6.19 грн |
RRE07VSM4STR |
Виробник: Rohm Semiconductor
Description: DIODE GP 400V 700MA TUMD2SM
Description: DIODE GP 400V 700MA TUMD2SM
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)RS1E350BNTB |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A 8HSOP
Description: MOSFET N-CH 30V 35A 8HSOP
на замовлення 1593 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 141.26 грн |
10+ | 121.98 грн |
100+ | 98.09 грн |
500+ | 75.63 грн |
1000+ | 62.66 грн |
RS3E075ATTB |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Description: MOSFET P-CH 30V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
на замовлення 11173 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.86 грн |
10+ | 58.92 грн |
100+ | 45.17 грн |
500+ | 33.51 грн |
1000+ | 26.81 грн |
RSA30LDDTE25 |
Виробник: Rohm Semiconductor
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
RSH070N05GZETB |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.36 грн |
10+ | 59.66 грн |
100+ | 41.71 грн |
500+ | 31.6 грн |
1000+ | 29.13 грн |
RSH070P05GZETB |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 7443 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 147.4 грн |
10+ | 117.99 грн |
100+ | 93.9 грн |
500+ | 74.57 грн |
1000+ | 63.27 грн |
RSX201VAM30TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
на замовлення 45095 шт:
термін постачання 21-31 дні (днів)RUS100N02TB |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 196.54 грн |
10+ | 122.57 грн |
100+ | 84.54 грн |
BA12004BF-E2 |
Виробник: Rohm Semiconductor
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
на замовлення 2344 шт:
термін постачання 21-31 дні (днів)BA2904WF-E2 |
Виробник: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE SOP8
Description: IC OP AMP GROUND SENSE SOP8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)BA3472RFVM-TR |
Виробник: Rohm Semiconductor
Description: IC OP AMP HS HV 8MSOP
Description: IC OP AMP HS HV 8MSOP
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)BD48K38G-TL |
Виробник: Rohm Semiconductor
Description: IC VOLTAGE SUPERVISOR 3SSOP
Description: IC VOLTAGE SUPERVISOR 3SSOP
товару немає в наявності
BD49K26G-TL |
Виробник: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
Description: IC VOLTAGE DETECTOR SSOP3
товару немає в наявності
BD49K44G-TL |
Виробник: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
Description: IC VOLTAGE DETECTOR SSOP3
товару немає в наявності
BD63821EFV-E2 |
Виробник: Rohm Semiconductor
Description: IC MOTOR DVR W/BRUSHES 28HTSSOP
Description: IC MOTOR DVR W/BRUSHES 28HTSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)BD6382EFV-E2 |
Виробник: Rohm Semiconductor
Description: IC MOTOR DVR STEPPER 24HTSSOP
Description: IC MOTOR DVR STEPPER 24HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)BD65499MUV-E2 |
Виробник: Rohm Semiconductor
Description: IC LENS DVR 1-2CH 28VQFN
Description: IC LENS DVR 1-2CH 28VQFN
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)