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BZX84B2V4W_R1_00001 BZX84B2V4W_R1_00001 Panjit International Inc. BZX84B2V4W_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.08%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZX84B2V4W_R1_00001 BZX84B2V4W_R1_00001 Panjit International Inc. BZX84B2V4W_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.08%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
1SMC5342_R1_00001 1SMC5342_R1_00001 Panjit International Inc. 1SMC5338_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+17.91 грн
Мінімальне замовлення: 800
1SMC5342_R1_00001 1SMC5342_R1_00001 Panjit International Inc. 1SMC5338_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
на замовлення 1260 шт:
термін постачання 21-31 дні (днів)
8+38.57 грн
10+ 31.79 грн
100+ 22.09 грн
Мінімальне замовлення: 8
1SMC5342-AU_R1_000A1 1SMC5342-AU_R1_000A1 Panjit International Inc. 1SMC5338-AU_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
товар відсутній
1SMC5342-AU_R1_000A1 1SMC5342-AU_R1_000A1 Panjit International Inc. 1SMC5338-AU_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
товар відсутній
GBU1506ULV_T0_00601 GBU1506ULV_T0_00601 Panjit International Inc. GBU1506ULV.pdf Description: ULTRA LOW VF BRIDGE RECTIFIER WI
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
2+306.26 грн
20+ 247.63 грн
100+ 200.36 грн
500+ 167.13 грн
1000+ 143.11 грн
2000+ 134.75 грн
Мінімальне замовлення: 2
PJQ5448-AU_R2_000A1 PJQ5448-AU_R2_000A1 Panjit International Inc. PJQ5448-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+13.93 грн
6000+ 12.73 грн
Мінімальне замовлення: 3000
PJQ5448-AU_R2_000A1 PJQ5448-AU_R2_000A1 Panjit International Inc. PJQ5448-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
на замовлення 8996 шт:
термін постачання 21-31 дні (днів)
8+41.66 грн
10+ 34.02 грн
100+ 23.65 грн
500+ 17.33 грн
1000+ 14.08 грн
Мінімальне замовлення: 8
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU_R2_002A1 Panjit International Inc. PJQ4548VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+19.62 грн
Мінімальне замовлення: 5000
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU_R2_002A1 Panjit International Inc. PJQ4548VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+54.77 грн
Мінімальне замовлення: 6
PJQ5548-AU_R2_002A1 PJQ5548-AU_R2_002A1 Panjit International Inc. PJQ5548-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5548-AU_R2_002A1 PJQ5548-AU_R2_002A1 Panjit International Inc. PJQ5548-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
6+59.4 грн
10+ 49.99 грн
100+ 34.64 грн
500+ 27.16 грн
1000+ 23.11 грн
Мінімальне замовлення: 6
PJQ4546P-AU_R2_002A1 PJQ4546P-AU_R2_002A1 Panjit International Inc. PJQ4546P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+23.97 грн
Мінімальне замовлення: 5000
PJQ4546P-AU_R2_002A1 PJQ4546P-AU_R2_002A1 Panjit International Inc. PJQ4546P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+60.94 грн
10+ 47.99 грн
100+ 37.28 грн
500+ 29.66 грн
1000+ 24.16 грн
2000+ 22.74 грн
Мінімальне замовлення: 6
PJQ5548V-AU_R2_002A1 PJQ5548V-AU_R2_002A1 Panjit International Inc. PJQ5548V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+23.81 грн
Мінімальне замовлення: 3000
PJQ5548V-AU_R2_002A1 PJQ5548V-AU_R2_002A1 Panjit International Inc. PJQ5548V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5+62.49 грн
Мінімальне замовлення: 5
PJQ5542-AU_R2_002A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+51.21 грн
Мінімальне замовлення: 3000
PJQ5542-AU_R2_002A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+113.4 грн
Мінімальне замовлення: 3
PJQ5540-AU_R2_002A1 Panjit International Inc. PJQ5540-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+69.57 грн
Мінімальне замовлення: 3000
PJQ5540-AU_R2_002A1 Panjit International Inc. PJQ5540-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+150.43 грн
Мінімальне замовлення: 3
PJQ4444P_R2_00001 PJQ4444P_R2_00001 Panjit International Inc. PJQ4444P.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ4444P_R2_00001 PJQ4444P_R2_00001 Panjit International Inc. PJQ4444P.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 4777 шт:
термін постачання 21-31 дні (днів)
7+47.06 грн
10+ 38.85 грн
100+ 26.92 грн
500+ 21.11 грн
1000+ 17.96 грн
2000+ 16 грн
Мінімальне замовлення: 7
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 Panjit International Inc. PJQ4546VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 Panjit International Inc. PJQ4546VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
5+64.8 грн
10+ 50.96 грн
100+ 39.67 грн
500+ 31.56 грн
1000+ 25.71 грн
2000+ 24.2 грн
Мінімальне замовлення: 5
PJQ5546-AU_R2_002A1 PJQ5546-AU_R2_002A1 Panjit International Inc. PJQ5546-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5546-AU_R2_002A1 PJQ5546-AU_R2_002A1 Panjit International Inc. PJQ5546-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
5+69.43 грн
10+ 54.82 грн
100+ 42.61 грн
500+ 33.89 грн
1000+ 27.61 грн
Мінімальне замовлення: 5
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Panjit International Inc. PJQ5546V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Panjit International Inc. PJQ5546V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
5+71.74 грн
10+ 56.68 грн
100+ 44.07 грн
500+ 35.06 грн
1000+ 28.56 грн
Мінімальне замовлення: 5
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Panjit International Inc. PJQ5544-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Panjit International Inc. PJQ5544-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
3+110.31 грн
10+ 86.84 грн
100+ 67.59 грн
500+ 53.76 грн
1000+ 43.79 грн
Мінімальне замовлення: 3
PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 Panjit International Inc. PJQ5544V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 Panjit International Inc. PJQ5544V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
3+114.94 грн
10+ 90.7 грн
100+ 70.53 грн
500+ 56.1 грн
1000+ 45.7 грн
Мінімальне замовлення: 3
5KP85A_R2_00001 5KP85A_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP85A_R2_00001 5KP85A_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP85CA_R2_00001 5KP85CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP85CA_R2_00001 5KP85CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90A_R2_00001 5KP90A_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90A_R2_00001 5KP90A_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90CA_R2_00001 5KP90CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90CA_R2_00001 5KP90CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
PM810_R2_00601 Panjit International Inc. PM810.pdf Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
PM810_R2_00601 Panjit International Inc. PM810.pdf Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
5+62.49 грн
10+ 51.85 грн
100+ 35.91 грн
500+ 28.16 грн
1000+ 23.96 грн
Мінімальне замовлення: 5
GBJ2506ULV_T0_00601 GBJ2506ULV_T0_00601 Panjit International Inc. GBJ2506ULV.pdf Description: ULTRA LOW VF BRIDGE RECTIFIER WI
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3595 шт:
термін постачання 21-31 дні (днів)
1+437.4 грн
15+ 353.8 грн
105+ 286.22 грн
510+ 238.76 грн
1005+ 204.44 грн
2010+ 192.5 грн
BZT52-C27_R1_00001 BZT52-C27_R1_00001 Panjit International Inc. BZT52-C2V4_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
товар відсутній
BZT52-C27_R1_00001 BZT52-C27_R1_00001 Panjit International Inc. BZT52-C2V4_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
на замовлення 2075 шт:
термін постачання 21-31 дні (днів)
29+10.8 грн
41+ 7.35 грн
100+ 3.97 грн
500+ 2.92 грн
1000+ 2.03 грн
Мінімальне замовлення: 29
BZT52-C27-AU_R1_000A1 BZT52-C27-AU_R1_000A1 Panjit International Inc. BZT52-C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
товар відсутній
BZT52-C27-AU_R1_000A1 BZT52-C27-AU_R1_000A1 Panjit International Inc. BZT52-C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
ER108_R2_00001 ER108_R2_00001 Panjit International Inc. ER100_SERIES.pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
ER108_R2_00001 ER108_R2_00001 Panjit International Inc. ER100_SERIES.pdf Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
PJD60P04E-AU_L2_006A1 PJD60P04E-AU_L2_006A1 Panjit International Inc. PJD60P04E-AU Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
товар відсутній
PJD60P04E-AU_L2_006A1 PJD60P04E-AU_L2_006A1 Panjit International Inc. PJD60P04E-AU Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
товар відсутній
SBA230AH_R1_00001 SBA230AH_R1_00001 Panjit International Inc. SBA220AL_SERIES.pdf Description: DIODE SCHOTTKY 30V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товар відсутній
SBA230AH_R1_00001 SBA230AH_R1_00001 Panjit International Inc. SBA220AL_SERIES.pdf Description: DIODE SCHOTTKY 30V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2887 шт:
термін постачання 21-31 дні (днів)
12+27.77 грн
17+ 18.42 грн
100+ 9 грн
500+ 7.04 грн
1000+ 4.89 грн
Мінімальне замовлення: 12
1SMA4728-AU_R1_000A1 1SMA4728-AU_R1_000A1 Panjit International Inc. 1SMA4728-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
1SMA4728-AU_R1_000A1 1SMA4728-AU_R1_000A1 Panjit International Inc. 1SMA4728-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
на замовлення 1027 шт:
термін постачання 21-31 дні (днів)
12+26.23 грн
16+ 19.09 грн
100+ 11.48 грн
500+ 9.98 грн
Мінімальне замовлення: 12
PZS51A17CS_R1_00001 PZS51A17CS_R1_00001 Panjit International Inc. PZS51A3V9CS_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.9 V
товар відсутній
PZS51A17CS_R1_00001 PZS51A17CS_R1_00001 Panjit International Inc. PZS51A3V9CS_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.9 V
товар відсутній
5KP11A_R2_00001 5KP11A_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP11A_R2_00001 5KP11A_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
BZX84B2V4W_R1_00001 BZX84B2V4W_SERIES.pdf
BZX84B2V4W_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.08%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZX84B2V4W_R1_00001 BZX84B2V4W_SERIES.pdf
BZX84B2V4W_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.08%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
1SMC5342_R1_00001 1SMC5338_SERIES.pdf
1SMC5342_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+17.91 грн
Мінімальне замовлення: 800
1SMC5342_R1_00001 1SMC5338_SERIES.pdf
1SMC5342_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
на замовлення 1260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.57 грн
10+ 31.79 грн
100+ 22.09 грн
Мінімальне замовлення: 8
1SMC5342-AU_R1_000A1 1SMC5338-AU_SERIES.pdf
1SMC5342-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
товар відсутній
1SMC5342-AU_R1_000A1 1SMC5338-AU_SERIES.pdf
1SMC5342-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: SMC (DO-214AB)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
товар відсутній
GBU1506ULV_T0_00601 GBU1506ULV.pdf
GBU1506ULV_T0_00601
Виробник: Panjit International Inc.
Description: ULTRA LOW VF BRIDGE RECTIFIER WI
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+306.26 грн
20+ 247.63 грн
100+ 200.36 грн
500+ 167.13 грн
1000+ 143.11 грн
2000+ 134.75 грн
Мінімальне замовлення: 2
PJQ5448-AU_R2_000A1 PJQ5448-AU.pdf
PJQ5448-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+13.93 грн
6000+ 12.73 грн
Мінімальне замовлення: 3000
PJQ5448-AU_R2_000A1 PJQ5448-AU.pdf
PJQ5448-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
на замовлення 8996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.66 грн
10+ 34.02 грн
100+ 23.65 грн
500+ 17.33 грн
1000+ 14.08 грн
Мінімальне замовлення: 8
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU.pdf
PJQ4548VP-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+19.62 грн
Мінімальне замовлення: 5000
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU.pdf
PJQ4548VP-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.77 грн
Мінімальне замовлення: 6
PJQ5548-AU_R2_002A1 PJQ5548-AU.pdf
PJQ5548-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5548-AU_R2_002A1 PJQ5548-AU.pdf
PJQ5548-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+59.4 грн
10+ 49.99 грн
100+ 34.64 грн
500+ 27.16 грн
1000+ 23.11 грн
Мінімальне замовлення: 6
PJQ4546P-AU_R2_002A1 PJQ4546P-AU.pdf
PJQ4546P-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+23.97 грн
Мінімальне замовлення: 5000
PJQ4546P-AU_R2_002A1 PJQ4546P-AU.pdf
PJQ4546P-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+60.94 грн
10+ 47.99 грн
100+ 37.28 грн
500+ 29.66 грн
1000+ 24.16 грн
2000+ 22.74 грн
Мінімальне замовлення: 6
PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
PJQ5548V-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+23.81 грн
Мінімальне замовлення: 3000
PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
PJQ5548V-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+62.49 грн
Мінімальне замовлення: 5
PJQ5542-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+51.21 грн
Мінімальне замовлення: 3000
PJQ5542-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+113.4 грн
Мінімальне замовлення: 3
PJQ5540-AU_R2_002A1 PJQ5540-AU.pdf
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+69.57 грн
Мінімальне замовлення: 3000
PJQ5540-AU_R2_002A1 PJQ5540-AU.pdf
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+150.43 грн
Мінімальне замовлення: 3
PJQ4444P_R2_00001 PJQ4444P.pdf
PJQ4444P_R2_00001
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
товар відсутній
PJQ4444P_R2_00001 PJQ4444P.pdf
PJQ4444P_R2_00001
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 4777 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+47.06 грн
10+ 38.85 грн
100+ 26.92 грн
500+ 21.11 грн
1000+ 17.96 грн
2000+ 16 грн
Мінімальне замовлення: 7
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.8 грн
10+ 50.96 грн
100+ 39.67 грн
500+ 31.56 грн
1000+ 25.71 грн
2000+ 24.2 грн
Мінімальне замовлення: 5
PJQ5546-AU_R2_002A1 PJQ5546-AU.pdf
PJQ5546-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5546-AU_R2_002A1 PJQ5546-AU.pdf
PJQ5546-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.43 грн
10+ 54.82 грн
100+ 42.61 грн
500+ 33.89 грн
1000+ 27.61 грн
Мінімальне замовлення: 5
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.74 грн
10+ 56.68 грн
100+ 44.07 грн
500+ 35.06 грн
1000+ 28.56 грн
Мінімальне замовлення: 5
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+110.31 грн
10+ 86.84 грн
100+ 67.59 грн
500+ 53.76 грн
1000+ 43.79 грн
Мінімальне замовлення: 3
PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.94 грн
10+ 90.7 грн
100+ 70.53 грн
500+ 56.1 грн
1000+ 45.7 грн
Мінімальне замовлення: 3
5KP85A_R2_00001 5KP_SERIES.pdf
5KP85A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP85A_R2_00001 5KP_SERIES.pdf
5KP85A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP85CA_R2_00001 5KP_SERIES.pdf
5KP85CA_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP85CA_R2_00001 5KP_SERIES.pdf
5KP85CA_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90A_R2_00001 5KP_SERIES.pdf
5KP90A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90A_R2_00001 5KP_SERIES.pdf
5KP90A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90CA_R2_00001 5KP_SERIES.pdf
5KP90CA_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP90CA_R2_00001 5KP_SERIES.pdf
5KP90CA_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
PM810_R2_00601 PM810.pdf
Виробник: Panjit International Inc.
Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
PM810_R2_00601 PM810.pdf
Виробник: Panjit International Inc.
Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+62.49 грн
10+ 51.85 грн
100+ 35.91 грн
500+ 28.16 грн
1000+ 23.96 грн
Мінімальне замовлення: 5
GBJ2506ULV_T0_00601 GBJ2506ULV.pdf
GBJ2506ULV_T0_00601
Виробник: Panjit International Inc.
Description: ULTRA LOW VF BRIDGE RECTIFIER WI
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+437.4 грн
15+ 353.8 грн
105+ 286.22 грн
510+ 238.76 грн
1005+ 204.44 грн
2010+ 192.5 грн
BZT52-C27_R1_00001 BZT52-C2V4_SERIES.pdf
BZT52-C27_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
товар відсутній
BZT52-C27_R1_00001 BZT52-C2V4_SERIES.pdf
BZT52-C27_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
на замовлення 2075 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
29+10.8 грн
41+ 7.35 грн
100+ 3.97 грн
500+ 2.92 грн
1000+ 2.03 грн
Мінімальне замовлення: 29
BZT52-C27-AU_R1_000A1 BZT52-C2V4-AU_SERIES.pdf
BZT52-C27-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
товар відсутній
BZT52-C27-AU_R1_000A1 BZT52-C2V4-AU_SERIES.pdf
BZT52-C27-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
ER108_R2_00001 ER100_SERIES.pdf
ER108_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
ER108_R2_00001 ER100_SERIES.pdf
ER108_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
PJD60P04E-AU_L2_006A1 PJD60P04E-AU
PJD60P04E-AU_L2_006A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
товар відсутній
PJD60P04E-AU_L2_006A1 PJD60P04E-AU
PJD60P04E-AU_L2_006A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
товар відсутній
SBA230AH_R1_00001 SBA220AL_SERIES.pdf
SBA230AH_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товар відсутній
SBA230AH_R1_00001 SBA220AL_SERIES.pdf
SBA230AH_R1_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2887 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.77 грн
17+ 18.42 грн
100+ 9 грн
500+ 7.04 грн
1000+ 4.89 грн
Мінімальне замовлення: 12
1SMA4728-AU_R1_000A1 1SMA4728-AU_SERIES.pdf
1SMA4728-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
1SMA4728-AU_R1_000A1 1SMA4728-AU_SERIES.pdf
1SMA4728-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
на замовлення 1027 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.23 грн
16+ 19.09 грн
100+ 11.48 грн
500+ 9.98 грн
Мінімальне замовлення: 12
PZS51A17CS_R1_00001 PZS51A3V9CS_SERIES.pdf
PZS51A17CS_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.9 V
товар відсутній
PZS51A17CS_R1_00001 PZS51A3V9CS_SERIES.pdf
PZS51A17CS_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.9 V
товар відсутній
5KP11A_R2_00001 5KP_SERIES.pdf
5KP11A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5KP11A_R2_00001 5KP_SERIES.pdf
5KP11A_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
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