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PJD60P04E-AU_L2_006A1 Panjit

Name: PJD60P04E-AU_L2_006A1
Brand: Panjit
SKU: 19165605-4
Price: 38.44 UAH
Availability: InStock

Виробник: Panjit
MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна без ПДВ
3+	113.15 грн
10+	91.85 грн
100+	62.19 грн
500+	52.7 грн
1000+	42.93 грн
3000+	40.44 грн
6000+	38.44 грн

Мінімальне замовлення: 3

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Технічний опис PJD60P04E-AU_L2_006A1 Panjit

Description: 40V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V.

Інші пропозиції PJD60P04E-AU_L2_006A1

Назва	Виробник	Інформація	Доступність
PJD60P04E-AU_L2_006A1	Виробник : PanJit Semiconductor	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
PJD60P04E-AU_L2_006A1	Виробник : Panjit International Inc.	Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V	товар відсутній
PJD60P04E-AU_L2_006A1	Виробник : Panjit International Inc.	Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V	товар відсутній
PJD60P04E-AU_L2_006A1	Виробник : PanJit Semiconductor	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced	товар відсутній