PJQ5546V-AU_R2_002A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.74 грн |
| 10+ | 56.68 грн |
| 100+ | 44.07 грн |
| 500+ | 35.06 грн |
| 1000+ | 28.56 грн |
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Технічний опис PJQ5546V-AU_R2_002A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції PJQ5546V-AU_R2_002A1 за ціною від 25.89 грн до 77.38 грн
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PJQ5546V-AU_R2_002A1 | Виробник : Panjit |
MOSFET 40V N-Channel Enhancement Mode MOSFET |
на замовлення 2780 шт: термін постачання 21-30 дні (днів) |
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PJQ5546V-AU_R2_002A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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PJQ5546V-AU_R2_002A1 | Виробник : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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PJQ5546V-AU_R2_002A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |