Фото | Назва | Виробник | Інформація |
Доступність |
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MT9V024IA7XTM-TR | onsemi | Description: SENSOR IMAGE VGA MONO 52-IBGA |
товар відсутній |
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MT9V034C12STM-DP | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 3023 шт: термін постачання 21-31 дні (днів) |
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MT9V034C12STM-DR | onsemi | Description: SENSOR IMAGE VGA MONO 48-CLCC |
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MT9V034C12STM-DR1 | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 452 шт: термін постачання 21-31 дні (днів) |
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MT9V034C12STM-TP | onsemi | Description: SENSOR IMAGE VGA MONO 48-CLCC |
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MT9V034C12STM-TR | onsemi | Description: SENSOR IMAGE VGA MONO 48-CLCC |
товар відсутній |
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AR0130CSSC00SPBA0-DR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-PLCC (11.43x11.43) Grade: Automotive Frames per Second: 45 Qualification: AEC-Q100 |
на замовлення 1108 шт: термін постачання 21-31 дні (днів) |
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AR0134CSSC00SPCA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Last Time Buy Frames per Second: 54 |
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AR0134CSSC00SPCA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Last Time Buy Frames per Second: 54 |
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AR0134CSSC00SPCA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
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AR0134CSSC00SUEA0-DPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
товар відсутній |
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AR0134CSSC00SUEA0-DRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
товар відсутній |
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AR0134CSSC00SUEA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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AR0134CSSM00SPCA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
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AR0134CSSM00SPCA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
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AR0134CSSM00SUEA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
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AR0134CSSM00SUEA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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MT9J003I12STMU-DP | onsemi |
Description: SNSR IMAGE DGTL HISPI 48-LCC Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.67µm x 1.67µm Active Pixel Array: 3856H x 2764V Supplier Device Package: 48-ILCC (10x10) Part Status: Active Frames per Second: 30 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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MT9M021IA3XTC-DPBR | onsemi |
Description: SENSOR IMAGE CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 45.0 |
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MT9M024IA3XTM-DRBR | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 45 |
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MT9V034C12STC-DP | onsemi |
Description: SENSOR IMAGE VGA COLOR 48CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товар відсутній |
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MT9V034C12STC-DR | onsemi |
Description: SENSOR IMAGE VGA COLOR 48CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 1669 шт: термін постачання 21-31 дні (днів) |
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MT9V126IA3XTC-DR | onsemi |
Description: SENSOR IMAGE VGA SOC 9X9BGA Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60 |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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MT9V128IA3XTC-DR | onsemi |
Description: SENSOR IMAGE Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 680H x 512V Supplier Device Package: 63-IBGA (9x9) Part Status: Not For New Designs Frames per Second: 60.0 |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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MT9V138C12STC-DR | onsemi |
Description: SENSOR IMAGE Packaging: Tray |
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 112500 шт: термін постачання 21-31 дні (днів) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 114307 шт: термін постачання 21-31 дні (днів) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17576 шт: термін постачання 21-31 дні (днів) |
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FGH40T65SH-F155 | onsemi |
Description: IGBT 650V 80A 268W TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.2ns/65.6ns Switching Energy: 1.01mJ (on), 297µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLP Packaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1808 шт: термін постачання 21-31 дні (днів) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLP Packaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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CPH3455-TL-W | onsemi | Description: MOSFET N-CH 35V 3A 3CPH |
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FS8G | onsemi |
Description: DIODE GEN PURP 400V 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
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FS8M | onsemi |
Description: DIODE GEN PURP 1KV 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
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FS8G | onsemi |
Description: DIODE GEN PURP 400V 8A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FS8J | onsemi | Description: DIODE GEN PURP 600V 8A TO277-3 |
на замовлення 1649 шт: термін постачання 21-31 дні (днів) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
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FS8M | onsemi |
Description: DIODE GEN PURP 1KV 8A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 2207 шт: термін постачання 21-31 дні (днів) |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
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NB3W800LMNG | onsemi |
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 133.33MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:8 Differential - Input:Output: Yes/Yes Supplier Device Package: 48-QFN (6x6) PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 7840 шт: термін постачання 21-31 дні (днів) |
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NBA3N200SDG | onsemi | Description: IC TRANSCEIVER HALF 1/1 8SOIC |
товар відсутній |
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NBA3N201SDG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 200Mbps Protocol: LVDS, Multipoint Supplier Device Package: 8-SOIC Receiver Hysteresis: 25 mV Duplex: Half Part Status: Obsolete |
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NBA3N206SDG | onsemi | Description: IC TRANSCEIVER HALF 1/1 8SOIC |
на замовлення 21490 шт: термін постачання 21-31 дні (днів) |
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NGTG35N65FL2WG | onsemi |
Description: IGBT FIELD STOP 650V 70A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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ESD5004MXTBG | onsemi |
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 4-X3DFN (0.53x0.93) Unidirectional Channels: 4 Voltage - Breakdown (Min): 3.9V Voltage - Clamping (Max) @ Ipp: 9.1V Power Line Protection: No Part Status: Active |
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NCL30030B3DR2G | onsemi |
Description: IC LED DRIVER OFFL 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting, Signage Internal Switch(s): No Topology: Flyback Supplier Device Package: 16-SOIC Voltage - Supply (Min): 9V Voltage - Supply (Max): 30V Part Status: Active |
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NCP51145MNTAG | onsemi |
Description: IC REG LDO DDR 1OUT 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 1V ~ 5.5V Operating Temperature: -40°C ~ 85°C Applications: LDO (Linear), DDR Supplier Device Package: 8-DFN (2x2) Part Status: Obsolete |
товар відсутній |
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NCS20072DR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
на замовлення 16100 шт: термін постачання 21-31 дні (днів) |
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NCS20072DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V |
товар відсутній |
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NTMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 23024 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C670NLT3G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C404NT1G | onsemi |
Description: MOSFET N-CH 40V 49A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 126A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |
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NVMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
MT9V034C12STM-DP |
Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 3023 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1653.52 грн |
10+ | 1260.3 грн |
25+ | 1193.96 грн |
80+ | 964.88 грн |
440+ | 902.63 грн |
MT9V034C12STM-DR1 |
Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 452 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1664.96 грн |
10+ | 1335.69 грн |
25+ | 1183.06 грн |
152+ | 1074.45 грн |
AR0130CSSC00SPBA0-DR |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 768.38 грн |
10+ | 592.09 грн |
25+ | 547.68 грн |
80+ | 444.52 грн |
440+ | 416.74 грн |
AR0134CSSC00SPCA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
товар відсутній
AR0134CSSC00SPCA0-TPBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
товар відсутній
AR0134CSSC00SPCA0-TRBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0134CSSC00SUEA0-DPBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
товар відсутній
AR0134CSSC00SUEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
товар відсутній
AR0134CSSC00SUEA0-TRBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0134CSSM00SPCA0-TPBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0134CSSM00SPCA0-TRBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0134CSSM00SUEA0-TPBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
товар відсутній
AR0134CSSM00SUEA0-TRBR |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
MT9J003I12STMU-DP |
Виробник: onsemi
Description: SNSR IMAGE DGTL HISPI 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.67µm x 1.67µm
Active Pixel Array: 3856H x 2764V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Active
Frames per Second: 30
Description: SNSR IMAGE DGTL HISPI 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.67µm x 1.67µm
Active Pixel Array: 3856H x 2764V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Active
Frames per Second: 30
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2793.5 грн |
10+ | 2241.9 грн |
25+ | 1985.68 грн |
80+ | 1803.37 грн |
MT9M021IA3XTC-DPBR |
Виробник: onsemi
Description: SENSOR IMAGE CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45.0
Description: SENSOR IMAGE CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45.0
товар відсутній
MT9M024IA3XTM-DRBR |
Виробник: onsemi
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 45
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 45
товар відсутній
MT9V034C12STC-DP |
Виробник: onsemi
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
товар відсутній
MT9V034C12STC-DR |
Виробник: onsemi
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 1669 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1585.6 грн |
10+ | 1208.5 грн |
25+ | 1144.91 грн |
152+ | 925.22 грн |
456+ | 865.53 грн |
MT9V126IA3XTC-DR |
Виробник: onsemi
Description: SENSOR IMAGE VGA SOC 9X9BGA
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60
Description: SENSOR IMAGE VGA SOC 9X9BGA
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2600+ | 968.92 грн |
MT9V128IA3XTC-DR |
Виробник: onsemi
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 680H x 512V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Not For New Designs
Frames per Second: 60.0
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 680H x 512V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Not For New Designs
Frames per Second: 60.0
на замовлення 73 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1709.98 грн |
10+ | 1371.91 грн |
25+ | 1215.12 грн |
FDD86369-F085 |
Виробник: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 43.16 грн |
5000+ | 39.58 грн |
12500+ | 37.75 грн |
FDBL86563-F085 |
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 175.36 грн |
FDD86369-F085 |
Виробник: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 114307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.54 грн |
10+ | 82.22 грн |
100+ | 63.94 грн |
500+ | 50.86 грн |
1000+ | 41.43 грн |
FDBL86563-F085 |
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17576 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 360.16 грн |
10+ | 291.27 грн |
100+ | 235.63 грн |
500+ | 196.56 грн |
1000+ | 168.3 грн |
FGH40T65SH-F155 |
Виробник: onsemi
Description: IGBT 650V 80A 268W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT 650V 80A 268W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
товар відсутній
FAN73893MX |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 126.42 грн |
FAN8841MPX |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
товар відсутній
FAN73893MX |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1808 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 252.57 грн |
10+ | 217.79 грн |
25+ | 205.94 грн |
100+ | 158.92 грн |
250+ | 142.59 грн |
500+ | 137.44 грн |
FAN8841MPX |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 267.83 грн |
10+ | 231.53 грн |
25+ | 218.88 грн |
100+ | 178.03 грн |
FS8G |
Виробник: onsemi
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 33.07 грн |
FS8K |
Виробник: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
FS8M |
Виробник: onsemi
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
FS8G |
Виробник: onsemi
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.93 грн |
10+ | 66.13 грн |
100+ | 51.45 грн |
500+ | 40.92 грн |
1000+ | 33.34 грн |
2000+ | 31.38 грн |
FS8J |
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO277-3
Description: DIODE GEN PURP 600V 8A TO277-3
на замовлення 1649 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 74.78 грн |
10+ | 64.88 грн |
100+ | 50.62 грн |
500+ | 39.24 грн |
1000+ | 30.98 грн |
FS8K |
Виробник: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
FS8M |
Виробник: onsemi
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 2207 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.93 грн |
10+ | 66.35 грн |
100+ | 51.61 грн |
500+ | 41.05 грн |
1000+ | 33.44 грн |
2000+ | 31.48 грн |
FDMT800120DC |
Виробник: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
товар відсутній
FDMT800120DC |
Виробник: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 453.25 грн |
10+ | 373.56 грн |
100+ | 311.33 грн |
500+ | 257.8 грн |
1000+ | 232.02 грн |
NB3W800LMNG |
Виробник: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 133.33MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (6x6)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 133.33MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (6x6)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 7840 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 534.13 грн |
10+ | 464.9 грн |
25+ | 443.28 грн |
80+ | 361.22 грн |
230+ | 344.99 грн |
490+ | 314.55 грн |
980+ | 269.47 грн |
NBA3N201SDG |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 200Mbps
Protocol: LVDS, Multipoint
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 25 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 200Mbps
Protocol: LVDS, Multipoint
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 25 mV
Duplex: Half
Part Status: Obsolete
товар відсутній
NBA3N206SDG |
Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Description: IC TRANSCEIVER HALF 1/1 8SOIC
на замовлення 21490 шт:
термін постачання 21-31 дні (днів)NGTG35N65FL2WG |
Виробник: onsemi
Description: IGBT FIELD STOP 650V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT FIELD STOP 650V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
на замовлення 42 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 264.01 грн |
30+ | 201.48 грн |
ESD5004MXTBG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 4-X3DFN (0.53x0.93)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 3.9V
Voltage - Clamping (Max) @ Ipp: 9.1V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 4-X3DFN (0.53x0.93)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 3.9V
Voltage - Clamping (Max) @ Ipp: 9.1V
Power Line Protection: No
Part Status: Active
товар відсутній
NCL30030B3DR2G |
Виробник: onsemi
Description: IC LED DRIVER OFFL 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
Part Status: Active
Description: IC LED DRIVER OFFL 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
Part Status: Active
товар відсутній
NCP51145MNTAG |
Виробник: onsemi
Description: IC REG LDO DDR 1OUT 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Applications: LDO (Linear), DDR
Supplier Device Package: 8-DFN (2x2)
Part Status: Obsolete
Description: IC REG LDO DDR 1OUT 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Applications: LDO (Linear), DDR
Supplier Device Package: 8-DFN (2x2)
Part Status: Obsolete
товар відсутній
NCS20072DR2G |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
на замовлення 16100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 20.86 грн |
5000+ | 19.34 грн |
12500+ | 18.6 грн |
NCS20072DTBR2G |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 37.8 грн |
5000+ | 35.03 грн |
NTMFS5C423NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
товар відсутній
NTMFS5C670NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 23024 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 28.18 грн |
3000+ | 25.54 грн |
7500+ | 24.33 грн |
10500+ | 21.78 грн |
NTMFS5C670NLT3G |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 24.66 грн |
10000+ | 22.65 грн |
NVMFS5C404NT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 49A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 49A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)NVMFS5C423NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 126A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 126A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVMFS5C670NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
товар відсутній